Abstract: A microwave-heating system irradiates sealed packaged foods with microwaves to heat the packaged foods at 100° C. or higher for heat sterilization. The microwave-heating system includes a microwave generator to irradiate the packaged foods with microwaves of 2450 MHz in a multi-mode and a microwave generator to irradiate the packaged foods in a waveguide with microwaves of 915 MHz in a single-mode.

Abstract: A connector device according to the present disclosure includes a first connector section and a second connector section. The first connector section includes a waveguide for transmitting a high-frequency signal. The second connector section includes a waveguide for transmitting a high-frequency signal, a yoke disposed to cover the waveguide, and a magnet forming a magnetic circuit with the yoke, and is couplable to the first connector section by the attractive force of the magnet. A communication system according to the present disclosure includes two communication devices and a connector device. The connector device has the above-described configuration and transmits a high-frequency signal between the two communication devices.

Abstract: A feature extracting unit obtains sensor data from a plurality of sensors to calculate each feature. When an event determining unit determines the occurrence of an event based on each feature, a display data constructor generates remote-controller display data for displaying the event, and controls a remote-controller display device to display the remote-controller display data. When a user decision is input from a user input IF based on this display, a control unit controls the sensors to be turned ON or OFF. When an infrared sensor detects an abnormality, a microwave sensor whose power consumption is small after the infrared sensor is turned ON. When the microwave sensor detects an abnormality, a video camera and a microphone are turned ON, and the microwave sensor is turned OFF. A communication unit wirelessly transmits an image signal captured by the video camera and an audio signal processed by the microphone.

Abstract: Afforded are: a toilet body including a toilet bowl part, a rim conduit 36, and a rim part; and a functional component mounted on an upper surface part of the toilet body, rearward of the toilet bowl part. The upper surface part includes a cut-out part formed such as to be recessed downward from the other part of the upper surface part. The functional component is disposed on the cut-out part such as to be partially positioned downward with respect to an upper surface of the rim part, and such as to be partially stuck out into the toilet bowl part from upon the cut-out part, and, on a bottom surface of the stuck-out part, the functional component is provided with a conduit forming surface serving as an upper surface of the rim conduit.

Abstract: [Object] To make communication between users through video being distributed smoother. [Solution] There is provided an information processing device including: a communication unit configured to acquire a moving image being subjected to live distribution as well as manipulation information including a manipulation position concerning location of a sticker on the moving image being displayed on a display unit of a device and information concerning the sticker to be located; and a control unit configured to analyze a region corresponding to the manipulation position on the moving image, and perform processing of locating the sticker on the moving image on a basis of an analysis result and the manipulation information.

Abstract: The stretchable porous film of the present invention includes voids in a surface thereof, in which: the stretchable porous film has an air permeability measured with an Oken-type air permeability meter of less than 99,999 sec/100 cc; the stretchable porous film has such an extending direction that an air permeability measured with the Oken-type air permeability meter in a state in which the stretchable porous film is extended by 100% becomes less than 60,000 sec/100 cc; and the stretchable porous film has such a pulling direction that when, in a hysteresis test, the stretchable porous film is pulled from a width of 20 mm and an inter-chuck distance of 30 mm to an inter-chuck distance of 60 mm at a pulling speed of 50 mm/min and held for 1 minute, and then the pulling of the inter-chuck distance is released, a residual strain becomes 10 mm or less.

Abstract: Provided is a stretchable film having excellent stretchability and excellent air permeability. Also provided is an article including such stretchable film. The stretchable film of the present invention includes an olefin-based resin and a filler.

Abstract: There is provided an information processing apparatus including an attribute management unit configured to manage a variable attribute value associated with each one or more characters existing in a real space, a detection unit configured to detect an interaction event between a first character and a real object by using an image captured by a camera that captures the real space, and a setting unit configured to set a rule for changing the attribute value of the first character depending on the interaction event. In a case where the detection unit has detected the interaction event, the attribute management unit changes the attribute value of the first character in accordance with the rule set by the setting unit.

Abstract: An object is to provide a semiconductor device having improved reliability by preventing, in forming a nonvolatile memory and MOSFETS on the same substrate, an increase in the size of grains in a gate electrode. The object can be achieved by forming the control gate electrode of the nonvolatile memory and the gate electrodes of the other MOSFETs from films of the same layer, respectively, and configuring each of the control gate electrode and the gate electrodes from a stack of two polysilicon film layers.

Abstract: An ESD protection element can have a high ESD protection characteristic which has a desired breakdown voltage and flows a large discharge current. A junction diode is formed by an N+ type buried layer having a proper impurity concentration and a P+ type buried layer. The P+ type buried layer is combined with a P+ type drawing layer to penetrate an N? type epitaxial layer and be connected to an anode element. An N+ type diffusion layer and a P+ typed diffusion layer connected to an surrounding the N+ type diffusion layer are formed in the N? epitaxial layer surrounded by the P+ type buried layer etc. The N+ type diffusion layer and P+ type diffusion layer are connected to a cathode electrode. An ESD protection element is formed by the PN junction diode and a parasitic PNP bipolar transistor which uses the P+ type diffusion layer as an emitted, the N? type epitaxial layer as the base, and the P+ type drawing layer etc. as the collector.

Abstract: There is provided an information processing apparatus, including an icon display section which displays an icon associated to an action of a user for a purpose of the user, a selection condition acquisition section which acquires a selection condition of the icon displayed by the icon display section, and a display information generation section which generates display information for sharing selected action associated to the icon with another user by using the selection condition acquired by the selection condition acquisition section.

Abstract: [Object] To provide a gas decomposition apparatus and a gas decomposition method in which no safety problems occur in spite of the application of a relatively high voltage between an anode and a cathode for the purpose of decomposing odorous gases of many types. [Solution] A catalytic electrode layer 6 that contains a catalyst and is porous; a counter electrode layer 7 that forms a pair with the catalytic electrode; and an electrolyte layer 15 that is sandwiched between the catalytic electrode and the counter electrode and has ion conductivity are included. The catalyst is held by the catalytic electrode in the form of being carried by a carrier containing a conductive material or the catalyst is directly carried by the catalytic electrode. A conductive material in the catalytic electrode, the conductive material being in contact with the catalyst, is not a noncovalent carbon material.

Abstract: The TSV technology has been popular as one of stacking technologies of a plurality of semiconductor chips. It has however been revealed by the present inventors that when TSV is formed using a so-called first via process, via middle process, front-via via last process, or the like, there is a possibility of defects such as gate breakdown occurring due to electrostatic breakdown in the subsequent process. In order to overcome the above problem, the present invention provides a method of manufacturing a semiconductor integrated circuit device, in which a through via electrode is formed by forming a hole in a semiconductor substrate, forming an insulating member in the hole, and burying a conductive member in the resulting hole while covering a portion of the hole except for the bottom portion with the insulating member.

Abstract: The TSV technology has been popular as one of stacking technologies of a plurality of semiconductor chips. It has however been revealed by the present inventors that when TSV is formed using a so-called first via process, via middle process, front-via via last process, or the like, there is a possibility of defects such as gate breakdown occurring due to electrostatic breakdown in the subsequent process. In order to overcome the above problem, the present invention provides a method of manufacturing a semiconductor integrated circuit device, in which a through via electrode is formed by forming a hole in a semiconductor substrate, forming an insulating member in the hole, and burying a conductive member in the resulting hole while covering a portion of the hole except for the bottom portion with the insulating member.

Abstract: An object is to provide a semiconductor device having improved reliability by preventing, in forming a nonvolatile memory and MOSFETS on the same substrate, an increase in the size of grains in a gate electrode. The object can be achieved by forming the control gate electrode of the nonvolatile memory and the gate electrodes of the other MOSFETs from films of the same layer, respectively, and configuring each of the control gate electrode and the gate electrodes from a stack of two polysilicon film layers.

Abstract: The invention provides an LDMOS transistor of which the time-dependent degrading of the performance due to the trapping of hot electrons in the gate insulation film is decreased. A body layer is disposed in a surface portion of an N? type semiconductor layer. A source layer including an N? type layer is disposed in a surface portion of the body layer. An N? type drift layer is formed in a surface portion of the N? type semiconductor layer. This drift layer includes a first region having a first N type impurity concentration peak region and a second region having a second N type impurity concentration peak region that is positioned deeper than the first N type impurity concentration peak region, the second region adjoining this first region. An N+ type drain layer is formed in a surface portion of the second region.

Abstract: An object is to provide a semiconductor device having improved reliability by preventing, in forming a nonvolatile memory and MOSFETS on the same substrate, an increase in the size of grains in a gate electrode. The object can be achieved by forming the control gate electrode of the nonvolatile memory and the gate electrodes of the other MOSFETs from films of the same layer, respectively, and configuring each of the control gate electrode and the gate electrodes from a stack of two polysilicon film layers.

Abstract: There is provided an information processing apparatus including an attribute management unit configured to manage a variable attribute value associated with each one or more characters existing in a real space, a detection unit configured to detect an interaction event between a first character and a real object by using an image captured by a camera that captures the real space, and a setting unit configured to set a rule for changing the attribute value of the first character depending on the interaction event. In a case where the detection unit has detected the interaction event, the attribute management unit changes the attribute value of the first character in accordance with the rule set by the setting unit.

Abstract: An N type layer made of an N type epitaxial layer in which an N+ type drain layer etc are formed is surrounded by a P type drain isolation layer extending from the front surface of the N type epitaxial layer to an N+ type buried layer. A P type collector layer is formed in an N type layer made of the N type epitaxial layer surrounded by the P type drain isolation layer and a P type element isolation layer, extending from the front surface to the inside of the N type layer. A parasitic bipolar transistor that uses the first conductive type drain isolation layer as the emitter, the second conductive type N type layer as the base, and the collector layer as the collector is thus formed so as to flow a surge current into a ground line.

Abstract: An ESD protection element can have a high ESD protection characteristic which has a desired breakdown voltage and flows a large discharge current. A junction diode is formed by an N+ type buried layer having a proper impurity concentration and a P+ type buried layer. The P+ type buried layer is combined with a P+ type drawing layer to penetrate an N? type epitaxial layer and be connected to an anode element. An N+ type diffusion layer and a P+ typed diffusion layer connected to an surrounding the N+ type diffusion layer are formed in the N? epitaxial layer surrounded by the P+ type buried layer etc. The N+ type diffusion layer and P+ type diffusion layer are connected to a cathode electrode. An ESD protection element is formed by the PN junction diode and a parasitic PNP bipolar transistor which uses the P+ type diffusion layer as an emitted, the N? type epitaxial layer as the base, and the P+ type drawing layer etc. as the collector.