Abstract: The leather-like sheet substrate of the invention comprises a nonwoven fabric of three-dimensionally entangled superfine fibers (A) of at most 0.5 dtex in fineness and a polymer elastomer (B) filled in the entangled interspaces of the nonwoven fabric, in which the superfine fibers (A) comprise an organophosphorus component-copolymerized polyester and the polymer elastomer (B) contains a metal hydroxide or is copolymerized with an organophosphorus component. The leather-like sheet substrate of the invention and artificial leather obtained from it contain no halogen and are resistant to flames. These have a soft feel and are suitable to applications in the interior field that requires flame retardancy, especially to seats for vehicles, etc.

Abstract: A semiconductor device capable of improving the operating speed and inhibiting the threshold voltage from fluctuation is obtained. In this semiconductor device, fluorine is introduced into at least any of regions extending over the junction interfaces between a first conductivity type semiconductor region and second conductivity type source/drain regions, at least the interface between the gate insulator film and the central region of a channel region as well as a gate insulator film, and side wall insulator films.

Abstract: There is disclosed a method of forming an isolation film in a semiconductor device, the method including the steps of: forming a silicon oxide film and a silicon nitride film in that order on a silicon substrate, using a resist pattern as a mask, etching the silicon nitride film and silicon oxide film, and forming trenches in the substrate. In the substrate, the respective trenches form a region in which isolation films are to be formed, and the region between the trenches forms an active region. In this case, each dimension is set so that a ratio W/t of width W to thickness t of the patterned silicon nitride film is 3.8 or more. Subsequently, by removing the resist pattern, subsequently using the silicon nitride film as the mask, and performing thermal oxidation at a temperature of 1050° C. to 1150° C. in an oxygen atmosphere, an isolation film is formed in the trench.

Abstract: The present invention is intended to provide a radio transmitter capable of in event that an analysis result of a radio signal to be transmitted is incompliant with a predetermined standard, stopping the radio signal transmission and outputting an abnormal alarm.

Abstract: A dermal absorption-promoting agent comprising p-methane-3,8-diol and 1,3-butylene glycol as well as a topical formulation containing the same; and a dermal absorption-promoting agent further comprising 1,3-butylene glycol, as well as a topical formulation containing such dermal absorption-promoting agents.

Abstract: A composite staple fiber, wherein a polymer component A and a polymer component B are alternately arranged in a fiber horizontal cross-section; the fiber periphery is entirely covered with the polymer component A; both the polymer component A and the polymer component A have a substantially flat shape; the lengthwise ends of the polymer component B are located 0.05 to 1.5 &mgr;m from the fiber surface; and the weight ratio of the polymer component A to the polymer component B is from 90/10 to 10/90. The composite staple fiber of the present invention is not peeled or split by a carding and a needle punching treatments, but is divided and split in the subsequent water jet entanglement, resulting in flat ultrafine fibers having a sharp-edged structure.

Abstract: In a plasma processing apparatus, in a matching circuit intervening between a high-frequency power source and a plasma excitation electrode for achieving impedance matching between the high-frequency power source and the plasma excitation electrode, one of the two electrodes which form a tuning capacitor also serves as the plasma excitation electrode. Alternatively, in a plasma processing apparatus, the side wall of a housing made from an electrically conductive member and accommodating a matching circuit intervening between a high-frequency power source and a plasma excitation electrode for achieving impedance matching between the high-frequency power source and the plasma excitation electrode and a feeder for supplying high-frequency electric power from the high-frequency power source to the plasma excitation electrode through the matching circuit is formed not in parallel to the feeder.

Abstract: Disclosed is a semiconductor memory device which has stack type memory cells each comprising one MIS transistor and one MIS capacitor. A first conductive film having a predetermined thickness is arranged to overlay a memory node contact of a memory cell which corresponds to a source or drain region of the MIS transistor. A second conductive film is formed on the surface of the first conductive film to have a predetermined thickness and come in contact with the source or drain region by means of a memory node contact hole formed inside the memory node contact. The first and second conductive films form a capacitor electrode of the MIS capacitor.