Abstract: A printed circuit board is by formed by laminating an interlaminar insulating layer on a conductor circuit of a substrate, in which the conductor circuit is comprised of an electroless plated film and an electrolytic plated film and a roughened layer is formed on at least a part of the surface of the conductor circuit.

Abstract: A board 20 is provided with a Cu film 30 as a conformal mask, in which are formed a register mark 30b and an opening 3a through which a via hole is formed. A camera senses this register mark 30b so that the position of the board 30 is determined. A laser beam is directed to the approximate position of the opening 30a, so that the opening 26a through which the via hole is drilled is formed. The accuracy of the position of the opening of the via hole depends on the accuracy of the position of the opening 30a in the Cu film 30 as the conformal mask. Therefore, the via hole can be formed at an adequate position despite the low accuracy of the position for laser irradiation.

Abstract: A ceramic board is provided which, when used as a heater, heats a silicon wafer uniformly throughout and, hence, does not damage the wafer and, when used as an electrostatic chuck, provides a sufficient chucking force. A ceramic board is provided for semiconductor manufacture apparatuses comprising a ceramic substrate and a semiconductor wafer mounted thereon directly or supported indirectly at a fixed distance from its surface, wherein the surface of said ceramic substrate, where said semiconductor wafer is to be mounted or supported, is controlled to a flatness of 1 to 50 ?m over a measurement range of [(diametric end-to-end length)?10 mm].

Abstract: The object of the present invention is to provide a metal heater capable of quickly heating a semiconductor wafer and the like with slight unevenness of temperature at the time of heating, and causing no warping or sagging in the metal plate employed therein. The metal heater of the present invention comprises a metal plate and a heating element, wherein the metal plate has a thickness of 50 mm or less and a surface flatness of 50 ?m or less, and an outer rim of a region where the heating element is formed is at a position within 25% of the diameter of the metal plate from an outer circumference of the metal plate.

Abstract: A ceramic substrate for semiconductor manufacture and/or inspection which is conducive to decrease in ?-rays radiated to prevent electrical errors, and to decrease an electrostatic chucking force such as heater or wafer prober, generation of particles, and circuit defects. The ceramic substrate is configured such that the level of ?-rays radiated from the surface of the ceramic substrate is not higher than 0.250 c/cm2.hr.

Abstract: A semiconductor-producing/examining device that can maintain a preferable connection state for a predetermined period of time and that can easily remove a ceramic substrate from a supporting case. The semiconductor producing/examining device includes a ceramic substrate having a conductor layer formed on the surface thereof or inside thereof and a supporting case. An external terminal is connected to the conductor layer. A connection between the conductor layer and the external terminal is performed such that the external terminal is pressed on the conductor layer or the external terminal is pressed on another conductor layer connected to the conductor layer by using the elastic force and the like of an elastic body.

Abstract: There is provided a laser processing apparatus, a multilayer printed wiring board manufacturing apparatus, and a manufacturing method to form via holes of ultra-fine diameter. The laser beam from the CO2 laser oscillator (60) is converted to the shortened wavelength beam by a tellurium crystal (94) to control diffraction of the laser beam. Simultaneously, when the laser beam is condensed, a limit value of the condensation limit is reduced. Thereby, the spot diameter of laser beam is reduced and a hole for via hole is bored on the interlayer insulation resin on a substrate (10). Therefore, even when the laser beam output is raised to form a deeper hole, the hole diameter is not widened and thereby a hole for a small diameter via hole can be formed.

Abstract: There is provided a laser processing apparatus, a multilayer printed wiring board manufacturing apparatus, and a manufacturing method to form via holes of ultra-fine diameter. The laser beam from the CO2 laser oscillator (60) is converted to the shortened wavelength beam by a tellurium crystal (94) to control diffraction of the laser beam. Simultaneously, when the laser beam is condensed, a limit value of the condensation limit is reduced. Thereby, the spot diameter of laser beam is reduced and a hole for via hole is bored on the interlayer insulation resin on a substrate (10). Therefore, even when the laser beam output is raised to form a deeper hole, the hole diameter is not widened and thereby a hole for a small diameter via hole can be formed.

Abstract: A multi-layer printed wiring board includes a board covered with a conductor layer, an interlayer insulating resin layer, an etched metal film on the interlayer insulating resin layer, and a via hole. The interlayer insulating resin layer has a fibrous substrate. The via hole has an electrolytic plated film and an electrolessly plated film and connects the conductor layer of the board and the etched metal film.

Abstract: A ceramic plate for a semiconductor producing/examining device, including a ceramic substrate having a heating surface for receiving a semiconductor wafer thereon or facing the semiconductor wafer at a given distance apart therefrom. The ceramic substrate has a surface roughness Rmax of about 0.1 to 250 ?m according to JIS R 0601, and a difference between a surface roughness of the heating surface and a surface roughness of the bottom surface is 50% or less.

Abstract: An objective of the present invention is to provide an aluminum nitride sintered body making it possible to keep a volume resistivity of 108 ?·cm or more, and guarantee covering-up capability, a large radiant heat amount and measurement accuracy with a thermoviewer. A carbon-containing aluminum nitride sintered body of the present invention of the present invention comprising: carbon whose peak cannot be detected on its X-ray diffraction chart or whose peak is below its detection limit thereon; in a matrix made of aluminum nitride.

Abstract: The object of the present invention is to provide a ceramic substrate that can provide a substantially uniform temperature distribution to a surface of the ceramic substrate where a semiconductor wafer is treated. A ceramic substrate for a semiconductor-producing/examining device according to the present invention is a ceramic substrate having a conductor formed on a surface of the ceramic substrate or inside the ceramic substrate, wherein said substrate is containing oxygen and having a disc form, the diameter thereof exceeding 250 mm and a thickness thereof being 25 mm or less.

Abstract: Holes (40a) are formed with a laser beam through an insulating substrate (40) on which a metallic layer (42) is formed and via holes (36a) are formed by filling up the holes (40a) with a metal (46). After the via holes (36a) are formed, a conductor circuit (32a) is formed by etching the metallic layer (42) and a single-sided circuit board (30A) is formed by forming projecting conductors (38a) on the surfaces of the via holes (36a). The projecting conductors (38a) on the circuit board (30A) are put on the conductor circuit (32b) of another single-sided circuit board (30B) with adhesive layers (50) composed of an uncured resin in-between and heated and pressed against the circuit (32b). The projecting conductors (38a) get in the uncured resin by pushing aside the resin and are electrically connected to the circuit (32b).

Abstract: There is provided a laser processing apparatus, a multilayer printed wiring board manufacturing apparatus, and a manufacturing method to form via holes of ultra-fine diameter. The laser beam from the CO2 laser oscillator (60) is converted to the shortened wavelength beam by a tellurium crystal (94) to control diffraction of the laser beam. Simultaneously, when the laser beam is condensed, a limit value of the condensation limit is reduced. Thereby, the spot diameter of laser beam is reduced and a hole for via hole is bored on the interlayer insulation resin on a substrate (10). Therefore, even when the laser beam output is raised to form a deeper hole, the hole diameter is not widened and thereby a hole for a small diameter via hole can be formed.

Abstract: An object of the present invention is to provide a hot plate which is superior in thermal conductivity, is superior in temperature-rising/dropping property, particularly in temperature-dropping property, and has high cooling thermal efficiency at the time of cooling. The hot plate of the present invention is a hot plate comprising: a ceramic substrate; and a resistance heating element formed on the surface of said ceramic substrate or inside said ceramic substrate, wherein said ceramic substrate has a leakage quantity of 10?7 Pa·m3/sec (He) or less by measurement with a helium leakage detector.

Abstract: An objective of the present invention is to provide an aluminum nitride sintered body making it possible to keep a volume resistivity of 108 ?·cm or more, and guarantee covering-up capability, a large radiant heat amount and measurement accuracy with a thermoviewer. A carbon-containing aluminum nitride sintered body of the present invention of the present invention comprising: carbon whose peak cannot be detected on its X-ray diffraction chart or whose peak is below its detection limit thereon; in a matrix made of aluminum nitride.

Abstract: A ceramic substrate for a semiconductor-producing/examining device, in which it is possible to promptly raise its temperature, a heating face thereof has a small temperature variation, and no semiconductor wafer and the like is damaged or distorted by thermal impact. The ceramic substrate for a semiconductor-producing/examining device has a resistance heating element formed on a surface thereof or inside thereof, wherein a projected portion for fitting a semiconductor wafer is formed along the periphery thereof and a large number of convex bodies, which make contact with the semiconductor wafer, are formed inside the projected portion.

Abstract: An objective of the present invention is to provide a ceramic heater making it possible to heat an object to be heated, such as a silicon wafer, evenly. The ceramic heater of the present invention is a ceramic heater having and a resistance heating element formed on the surface of the ceramic substrate or inside the ceramic substrate, wherein: said ceramic heater is equipped with: a temperature-measuring means measuring the temperature of said ceramic substrate and an object to be heated; a control unit supplying electric power to said heating element; a memory unit memorizing the temperature data measured by said temperature-measuring means; and an operation unit calculating electric power required for said heating element from said temperature, said ceramic heater being constituted such that said heating element is divided into at least 2 or more circuits and different electric power is supplied to each of the circuits of said resistance heating element.

Abstract: An object of the present invention is to provide a ceramic substrate that is superior in temperature rising/dropping characteristics and breakdown voltage at a high temperature, has a small warp amount, and is best as a substrate for semiconductor-producing/examining devices. The ceramic substrate of the present invention is a ceramic substrate having a conductor formed on the surface thereof or inside thereof, characterized in that said ceramic substrate is having 15×1011 or less pores which have a diameter of 0.5 ?m or more per m2.

Abstract: The object of the present invention is to provide an aluminum nitride sintered body which has excellent mechanical strength and in which ceramic particles is prevented from coming off from the surface and/or side thereof and generation of free particles is suppressed. The aluminum nitride sintered body of the present invention is wherein it contains sulfur.