Abstract: This invention has its object to provide a ceramic board which, when used as a heater, heats a silicon wafer uniformly throughout and, hence, does not damage the wafer and, when used as an electrostatic chuck, provides a sufficient chucking force.

Abstract: An object of the present invention is to provide a ceramic heater making it possible to suppress an outflow of heat to a supporting case and so on to make the temperature of its ceramic substrate uniform. The ceramic heater of the present invention is a ceramic heater wherein a heating element is arranged on a surface of a ceramic substrate or inside the ceramic substrate, the surface roughness Rmax of the side face of the ceramic substrate being from 0.1 to 200 &mgr;m according to JIS B 0601.

Abstract: An object of the present invention is to provide a ceramic heater making it possible to suppress an outflow of heat to a supporting case and so on to make the temperature of its ceramic substrate uniform. The ceramic heater of the present invention is a ceramic heater wherein a heating element is arranged on a surface of a ceramic substrate or inside the ceramic substrate, the surface roughness Rmax of the side face of the ceramic substrate being from 0.1 to 200 &mgr;m according to JIS B 0601.

Abstract: An object of the present invention is to provide a ceramic heater for a semiconductor producing/examining device in which the temperature of the whole of its wafer heating face becomes even and by which a semiconductor wafer and the like can be evenly heated. The ceramic heater for a semiconductor producing/examining device according to the present invention comprises a resistance heating element formed on a surface of a ceramic substrate or inside the ceramic substrate, wherein the dispersion of the resistance value of the resistance heating element to the average resistance value thereof is 25% or less.

Abstract: An object of the present invention is to provide a wafer prober capable of protecting a chuck top conductor layer against noises, preventing integrated circuits and the like from erroneously operating due to the noises, and precisely determining whether or not the integrated circuits and the like normally operate. The present invention provides a wafer prober comprising: a ceramic substrate and a chuck top conductor layer formed on a main face of said ceramic substrate; and a guard electrode formed inside of said ceramic substrate, wherein a metal layer is formed on a side face of said ceramic substrate.

Abstract: An objective of the present invention is to provide a ceramic heater making it possible to heat an object to be heated, such as a silicon wafer, uniformly. The ceramic heater of the present invention is a ceramic heater wherein a heating element is formed on a surface of a ceramic plate or inside the ceramic plate, wherein: a bottomed hole is made, being directed from the opposite side to a heating surface for heating an object to be heated, toward the heating surface; the bottom of said bottomed hole is formed relatively nearer to the heating surface than the heating element; and a temperature-measuring element is set up in this bottomed hole.

Abstract: An objective of the present invention is to provide a ceramic heater making it possible to heat an object to be heated, such as a silicon wafer, uniformly. The ceramic heater of the present invention is a ceramic heater wherein a heating element is formed on a surface of a ceramic plate or inside the ceramic plate, wherein: a bottomed hole is made, being directed from the opposite side to a heating surface for heating an object to be heated, toward the heating surface; the bottom of said bottomed hole is formed relatively nearer to the heating surface than the heating element; and a temperature-measuring element is set up in this bottomed hole.

Abstract: An objective of the present invention is to provide a ceramic heater making it possible to heat an object to be heated, such as a silicon wafer, uniformly. The ceramic heater of the present invention is a ceramic heater wherein a heating element is formed on a surface of a ceramic plate or inside the ceramic plate, wherein: a bottomed hole is made, being directed from the opposite side to a heating surface for heating an object to be heated, toward the heating surface; the bottom of said bottomed hole is formed relatively nearer to the heating surface than the heating element; and a temperature-measuring element is set up in this bottomed hole.

Abstract: The objective of the invention is to provide a ceramic substrate: wherein even if rapid temperature rising or rapid temperature falling is conducted, no problem of cracking or warp of the ceramic substrate occurs; wherein, in case that the ceramic substrate is a ceramic substrate constituting an electrostatic chuck, local dispersion of chuck power is eliminated, in case that the ceramic substrate is a ceramic substrate constituting a hot plate, local dispersion of temperature of a wafer treating face is eliminated, in case that the ceramic substrate is a ceramic substrate constituting a wafer prober, dispersion of applied voltage of a guard electrode or a ground electrode is eliminated and a stray capacitor or noise can be eliminated.

Abstract: An object of the present invention is to provide a heater wherein even if a through hole into which lifter pins and the like for supporting a semiconductor wafer will be inserted is made, the temperature in the vicinity of the through hole is not lowered so that the temperature in its heating face is even. The present invention is a ceramic heater comprising a ceramic substrate; and a resistance heating element formed on the surface of the ceramic substrate or inside above-mentioned ceramic substrate, above-mentioned ceramic substrate being equipped with a through hole, wherein the wall face of above-mentioned through hole has a surface roughness of Rmax=0.05 to 200 &mgr;m based on JIS B 0601.

Abstract: The object of the present invention is to provide an aluminum nitride sintered body which has excellent mechanical strength and in which ceramic particles is prevented from coming off from the surface and/or side thereof and generation of free particles is suppressed. The aluminum nitride sintered body of the present invention is wherein it contains sulfur.

Abstract: One object of the present invention is to provide an electrostatic chuck which allows sufficiently rapid temperature rising/dropping thereof, in case that the diameter of a ceramic substrate is 190 mm or more or especially incase that the diameter of the ceramic substrate is quite large, exceeding 300 mm. The present invention discloses an electrostatic chuck comprising: a ceramic substrate equipped with a temperature controlling means; an electrostatic electrode formed on the ceramic substrate; and a ceramic dielectric film provided on the electrostatic electrode, wherein: the ceramic substrate has a diameter exceeding 190 mm and a thickness of 20 mm or less; and the ceramic dielectric film contains oxygen in an amount of 0.1 to 20 weight %.

Abstract: A board 20 is provided with a Cu film 30 as a conformal mask, in which are formed a register mark 30b and an opening 3a through which a via hole is formed. A camera senses this register mark 30b so that the position of the board 30 is determined. A laser beam is directed to the approximate position of the opening 30a, so that the opening 26a through which the via hole is drilled is formed. The accuracy of the position of the opening of the via hole depends on the accuracy of the position of the opening 30a in the Cu film 30 as the conformal mask. Therefore, the via hole can be formed at an adequate position despite the low accuracy of the position for laser irradiation.

Abstract: An object of the present invention is to provide a ceramic plate comprising a ceramic substrate for a semiconductor producing/examining device making it possible to prevent a warp of its ceramic substrate from being generated and prevent damage and the like of a silicon wafer put on the ceramic substrate, based on the warp, from being generated. The ceramic plate for a semiconductor producing/examining device of the present invention is a ceramic plate comprising a ceramic substrate for a semiconductor producing/examining device, a semiconductor wafer being put on a surface of the ceramic substrate, or held a given distance apart from the surface of the above-mentioned ceramic substrate, wherein the surface roughness of the ceramic substrate according to JIS R 0601 is set as follows: Rmax=0.

Abstract: An object of the present invention is to provide an optimum ceramic substrate being excellent in temperature rising property and breakdown voltage and Young's modulus at a high temperature as a substrate for producing/examining a semiconductor, and in the ceramic substrate of the present invention having a conductor on a surface or inside thereof, the ceramic substrate has a leakage quantity of 10−7 Pa·m3/sec (He) or less by measurement with a helium leakage detector.

Abstract: The present invention has its object to provide a ceramic heater which has a high thermal conductivity so that the surface temperature of the heater plate promptly follows the temperature change of the heating element to control the temperature of the wafer-heating surface with high efficiency and the thermal diffusion of impurity from the ceramic heater can be successfully prevented.

Abstract: An objective of the present invention is to provide a ceramic substrate making it possible to control its heating face into even temperature even if through holes into which lifter pins, supporting pins and the like will be inserted are made. The present invention is a ceramic substrate having: a heating element composed of one or more circuit(s) on a surface thereof or inside thereof; and a through hole being made in the ceramic substrate, wherein the heating element circuit is formed in the range of 20 mm or less from the inner wall of the through hole.

Abstract: An objective of the present invention is to provide a ceramic heater making it possible to prevent a short circuit in its resistance heating element and heat a semiconductor wafer evenly. The ceramic heater of the present invention is a ceramic heater comprising: a ceramic substrate; an insulating layer having volume resistivity higher than that of said ceramic substrate, being formed on at least a part of said ceramic substrate; and a resistance heating element formed on said insulating layer.

Abstract: A board 20 is provided with a Cu film 30 as a conformal mask, in which are formed a register mark 30b and an opening 3a through which a via hole is formed. A camera senses this register mark 30b so that the position of the board 30 is determined. A laser beam is directed to the approximate position of the opening 30a, so that the opening 26a through which the via hole is drilled is formed. The accuracy of the position of the opening of the via hole depends on the accuracy of the position of the opening 30a in the Cu film 30 as the conformal mask. Therefore, the via hole can be formed at an adequate position despite the low accuracy of the position for laser irradiation.

Abstract: Holes (40a) are formed with a laser beam through an insulating substrate (40) on which a metallic layer (42) is formed and via holes (36a) are formed by filling up the holes (40a) with a metal (46). After the via holes (36a) are formed, a conductor circuit (32a) is formed by etching the metallic layer (42) and a single-sided circuit board (30A) is formed by forming projecting conductors (38a) on the surfaces of the via holes (36a). The projecting conductors (38a) on the circuit board (30A) are put on the conductor circuit (32b) of another single-sided circuit board (30B) with adhesive layers (50) composed of an uncured resin in-between and heated and pressed against the circuit (32b). The projecting conductors (38a) get in the uncured resin by pushing aside the resin and are electrically connected to the circuit (32b).