Abstract: An aluminum nitride ceramic including a sintered body having an aluminum nitride matrix, a carbon contained in the aluminum nitride matrix, and a sintering aid. The carbon is undetectable on an X-ray diffraction chart or below a detection limit of the X-ray diffraction chart.

Abstract: An objective of the present invention is to provide an aluminum nitride sintered body making it possible to keep a volume resistivity of 108 ?•cm or more, and guarantee covering-up capability, a large radiant heat amount and measurement accuracy with a thermoviewer. A carbon-containing aluminum nitride sintered body of the present invention of the present invention comprising: carbon whose peak cannot be detected on its X-ray diffraction chart or whose peak is below its detection limit thereon: in a matrix made of aluminum nitride.

Abstract: The present invention provides a ceramic substrate which can keep a sufficiently large breakdown voltage even if the pore diameter of its maximum pore is 50 ?m or less to be larger than that of conventional ceramic substrates, can give a large fracture toughness value because of the presence of pores, can resist thermal impact, and can give a small warp amount at high temperature. The ceramic substrate of the present invention is a ceramic substrate for a semiconductor-producing/examining device having a conductor formed on a surface of the ceramic substrate or inside the ceramic substrate, wherein: the substrate is made of a non-oxide ceramic containing oxygen; and the pore diameter of the maximum pore thereof is 50 ?m or less.

Abstract: A ceramic heater making it possible to prevent a short circuit in its resistance heating element and heat a semiconductor wafer evenly. The ceramic beater includes a ceramic substrate, an insulating layer having volume resistivity higher than that of the ceramic substrate, being formed on at least a part of the ceramic substrate, and a resistance heating element formed on the insulating layer.

Abstract: A ceramic substrate for a semiconductor producing/examining device which has high fracture toughness value, excellent thermal shock resistivity, high thermal conductivity and an excellent temperature rising and falling properties, can be used as a hot plate, an electrostatic chuck, a wafer prober and the like. A ceramic substrate, for a semiconductor producing/examining device, having a conductor formed inside or on the surface thereof has been sintered such that a fractured section thereof exhibits intergranular fracture.

Abstract: A ceramic heater improving a uniformity of temperature distribution in a work heating face, wherein a resistance heating body formed on a face of a ceramic substrate opposite to the work heating face thereof is such that the scattering of thickness is within ±50% of an average thickness, and a surface roughness of the resistance heating body is a range of 0.05-100 ?m as Rmax and not more than 50% of the average thickness.

Abstract: A ceramic heater for a semiconductor producing/examining device including a ceramic substrate having a disc form with a diameter exceeding 200 mm and first and second surfaces, the first surface being a wafer-holding face and the second surface opposing to the first surface, the wafer-holding face being such that a semiconductor wafer is directly put on the wafer-holding face or held apart from the wafer-holding face by a supporting pin. The wafer-holding face has a surface roughness Rmax of 0.1 to 250 ?m according to JIS R 0601, and a difference between the surface roughness of the wafer-holding face and surface roughness of the second surface is 50% or less.

Abstract: It is a an object of the present invention to provide a ceramic substrate for a semiconductor producing/examining device which has high fracture toughness value, exellent thermal shock resistivity, high thermal conductivity and an excellent temperature rising and falling properties, and is preferable as a hot plate, an electrostatic chuck, a wafer prober and the like. A ceramic substrate, for a semiconductor producing/examining device, having a conductor formed inside thereof or on the surface thereof of the present invention is the ceramic substrate, wherein said ceramic substrate has been sintered such that a fractured section thereof exhibits intergranular fracture.

Abstract: The object of the present invention is to provide an aluminum nitride sintered body which has excellent mechanical strength and in which ceramic particles is prevented from coming off from the surface and/or side thereof and generation of free particles is suppressed. The aluminum nitride sintered body of the present invention is wherein it contains sulfur.

Abstract: An object of the present invention is to provide a ceramic heater making it possible to suppress an outflow of heat to a supporting case and so on to make the temperature of its ceramic substrate uniform. The ceramic heater of the present invention is a ceramic heater wherein a heating element is arranged on a surface of a ceramic substrate or inside the ceramic substrate, the surface roughness Rmax of the side face of the ceramic substrate being from 0.1 to 200 ?m according to JIS B 0601.

Abstract: A ceramic substrate for semiconductor manufacture and/or inspection which is conducive to decrease in ?-rays radiated, to prevent electrical errors, and to decrease an electrostatic chucking force such as heater or wafer prober, generation of particles, and circuit defects. The ceramic substrate is configured such that the level of ?-rays radiated from the surface of the ceramic substrate is not higher than 0.250 c/cm2·hr.

Abstract: An object of the present invention is to provide a hot plate for a semiconductor producing/examining device, in which hot plate, when an object to be heated such as a silicon wafer is heated in a state that the object is distanced by a certain distance from the heating face, air is less likely to stagnate between the silicon wafer and the heating face and thus the object to be heated can be evenly heated. Specifically, the hot plate for a semiconductor producing/examining device of the present invention comprises a resistance heating element formed on a surface of a ceramic substrate or inside the ceramic substrate, wherein the glossiness of the heating face of said ceramic substrate is 1.5% or more.

Abstract: An object of the present invention is to provide a ceramic substrate that is superior in heat uniformity and thermal shock resistance, and has a large chuck power in the case that the ceramic substrate is made to be an electrostatic chuck. The ceramic substrate of the present invention is a ceramic substrate comprising a conductor layer formed therein, characterized in that a section of the edge of the conductor layer is in a peaked shape.

Abstract: An objective of the present invention is to provide a ceramic heater making it possible to prevent a short circuit in its resistance heating element and heat a semiconductor wafer evenly. The ceramic heater of the present invention is a ceramic heater comprising: a ceramic substrate; an insulating layer having volume resistivity higher than that of said ceramic substrate, being formed on at least a part of said ceramic substrate; and a resistance heating element formed on said insulating layer.

Abstract: The object of the present invention is to provide an aluminum nitride sintered body which has excellent mechanical strength and in which ceramic particles is prevented from coming off from the surface and/or side thereof and generation of free particles is suppressed. The aluminum nitride sintered body of the present invention is wherein it contains sulfur.

Abstract: The present invention provide a ceramic substrate for semiconductor manufacture and/or inspection which is conducive to decrease in ?-rays radiated, and change of thermal conductivity with passage of the time, and which is superior in the temperature controllability. This invention is related to a ceramic substrate for apparatuses for use in semiconductor manufacture and/or inspection, wherein the level of ?-rays radiated from said ceramic substrate exceeds 0.25 c/cm2·hr and is not higher than 50 c/cm2·hr.

Abstract: An object of the present invention is to provide a ceramic substrate that is superior in temperature rising/dropping characteristics and breakdown voltage at a high temperature, has a small warp amount, and is best as a substrate for semiconductor- producing/examining devices. The ceramic substrate of the present invention is a ceramic substrate having a conductor formed on the surface thereof or inside thereof, characterized in that said ceramic substrate is having 15×1011 or less pores which have a diameter of 0.5 ?m or more per m2.

Abstract: A printed circuit board is by formed by laminating an interlaminar insulating layer on a conductor circuit of a substrate, in which the conductor circuit is comprised of an electroless plated film and an electrolytic plated film and a roughened layer is formed on at least a part of the surface of the conductor circuit.

Abstract: An object of the present invention is to provide a ceramic heater making it possible to suppress an outflow of heat to a supporting case and so on to make the temperature of its ceramic substrate uniform. The ceramic heater of the present invention is a ceramic heater wherein a heating element is arranged on a surface of a ceramic substrate or inside the ceramic substrate, the surface roughness Rmax of the side face of the ceramic substrate being from 0.1 to 200 &mgr;m according to JIS B 0601.

Abstract: An objective of the present invention is to provide an aluminum nitride sintered body making it possible to keep a volume resistivity of 108&OHgr;·cm or more, and guarantee covering-up capability, a large radiant heat amount and measurement accuracy with a thermoviewer. A carbon-containing aluminum nitride sintered body of the present invention of the present invention comprising: carbon whose peak cannot be detected on its X-ray diffraction chart or whose peak is below its detection limit thereon; in a matrix made of aluminum nitride.