Abstract: The present teaching provides a fluorescent oligonucleotide probe having a high degree of design flexibility and wide applicability, as well as the use thereof. This is an oligonucleotide probe capable of forming a stem and loop, comprising at least one fluorophore located between adjacent nucleotides in the stem and is linked to a unit represented by Formula (1) and at least one quencher located at a site capable of pairing up with the at least one fluorophore located between the adjacent nucleotides in the stem and is linked to a unit represented by Formula (2). (In the formulae, X represents the fluorophore, Y represents the quencher, R1 represents an optionally substituted C2 or C3 alkylene chain, R2 represents an optionally substituted C0-2 alkylene chain, and Z represents a direct bond or linker.

Abstract: Disclosed is a peptide immobilization technique which can achieve the immobilization of a satisfactory quantity of a peptide on a solid support. In the immobilization of a peptide on a solid support, a surfactant is allowed to coexist on the solid support together with the peptide. In this manner, the quantity of the peptide immobilized on the solid support can be increased.

Abstract: In order to provide a semiconductor integrated circuit device such as a high-performance semiconductor integrated circuit device capable of reducing a soft error developed in each memory cell of a SRAM, the surface of a wiring of a cross-connecting portion, of a SRAM memory cell having a pair of n-channel type MISFETs whose gate electrodes and drains are respectively cross-connected, is formed in a shape that protrudes from the surface of a silicon oxide film. A silicon nitride film used as a capacitive insulating film, and an upper electrode are formed on the wiring. A capacitance can be formed of the wiring, the silicon nitride film and the upper electrode.

Abstract: A method of manufacture of a semiconductor device includes forming a gate insulating film and gate electrode made of polycrystalline silicon over a semiconductor substrate; implanting ions into the semiconductor substrate to form a semiconductor region as a source or drain; forming a cobalt film and a titanium nitride film over the semiconductor substrate to cover the gate electrode; carrying out annealing to cause a reaction between Co and Si and the semiconductor region to form a CoSi layer; carrying out wet cleaning to remove the titanium nitride film and unreacted cobalt film to leave the CoSi layer over the gate electrode and semiconductor region; carrying out annealing to cause a reaction between the CoSi layer and the gate electrode and semiconductor region to form a CoSi2 layer; carrying out HPM cleaning; and forming over the semiconductor substrate a silicon nitride film by low-pressure CVD to cover the gate electrode.

Abstract: A microarray for predicting the prognosis of neuroblastoma, wherein the microarray has 25 to 45 probes related to good prognosis, which are hybridized to a gene transcript whose expression is increased in a good prognosis patient with neuroblastoma and are selected from 96 polynucleotides consisting of the nucleotide sequences of SEQ. ID NOs. 1, 5, 6, 14. 16, 17, 19, 22-24, 28, 29, 31, 37, 39, 40, 43, 44, 47-52, 54, 57-60, 62, 64, 65, 67, 68, 72-75, 77, 78, 80-82, 84, 87, 89-91, 94, 100, 103, 112, 113, 118, 120, 129, 130, 132, 136, 138, 142, 144, 145, 148, 150-153, 155, 158-160, 163-165, 169-171, 173, 174, 177, 178, 180-182, 184, 186, 187, 189, 191, 192, 194, 195, 198-200 or their partial continuous sequences or their complementary strands, and 25 to 45 probes related to poor prognosis, which are hybridized to a gene transcript whose expression is increased in a poor prognosis patient with neuroblastoma and are selected from 104 polynucleotides consisting of the nucleotide sequences of SEQ. ID NOs.

Abstract: In order to provide a semiconductor integrated circuit device such as a high-performance semiconductor integrated circuit device capable of reducing a soft error developed in each memory cell of a SRAM, the surface of a wiring of a cross-connecting portion, of a SRAM memory cell having a pair of n-channel type MISFETs whose gate electrodes and drains are respectively cross-connected, is formed in a shape that protrudes from the surface of a silicon oxide film. A silicon nitride film used as a capacitive insulating film, and an upper electrode are formed on the wiring. A capacitance can be formed of the wiring, the silicon nitride film and the upper electrode.

Abstract: An object of the present invention is to provide a probe array having partitioned array regions with uniform surface chemical properties. The probe array of the present invention includes a substrate having a plurality of partitioned array regions where many probes are immobilized and a separator attached to the substrate and including partitions partitioning the array regions. The above object can be achieved by attaching the separator including the partitions capable of partitioning instead of forming hydrophobic regions on a surface of the substrate by printing or chemical treatment.

Abstract: In order to provide a semiconductor integrated circuit device such as a high-performance semiconductor integrated circuit device capable of reducing a soft error developed in each memory cell of a SRAM, the surface of a wiring of a cross-connecting portion, of a SRAM memory cell having a pair of n-channel type MISFETs whose gate electrodes and drains are respectively cross-connected, is formed in a shape that protrudes from the surface of a silicon oxide film. A silicon nitride film used as a capacitive insulating film, and an upper electrode are formed on the wiring. A capacitance can be formed of the wiring, the silicon nitride film and the upper electrode.

Abstract: A novel chip capable of reducing a reaction period, applying wide-ranging target substance, preventing a mismatch binding efficiently and enabling a highly accurate detection is provided. Thus, an inventive reactive chip has the capture probe (60) fixed on each of three or more vibration areas (50) arranged on the support (30), the capture probes being able to binding to a target substance, wherein each vibration area has the vibration-generating part (40) having the first electrode (11) and the second electrode (12) between which the piezoelectric/electrostrictive element (20) is sandwiched.

Abstract: A method for determining the prognosis of a CD5+DLBCL patient and a CD5-DLBCL patient is provided. It is determined that, in the chromosomal DNA from a patient with lymphoma, (1) the prognosis of the CD5+DLBCL patient with amplification of 13q21.1-q31.3 region is poor; (2) the prognosis of the CD5+DLBCL patient with deletion of 1p36.21-p36.13 region is poor; and (3) the prognosis of the CD5-DLBCL patient with amplification of 5p15.33-p14.2 region is good.

Abstract: A microchemical chip comprises a plate-shaped substrate, with a channel formed on a surface of the substrate through which a fluid flows. A fluid storage section for storing the fluid communicates with the channel at a starting end of the channel. A fluid discharge section communicates with the channel at a terminal end of the channel. An extruding pump section is formed integrally on the substrate, at a portion of the channel in the vicinity of the fluid storage section.

Abstract: The present invention provides a hybridization method suited for using a signal probe. An array of the present invention comprises: a substrate; a nucleic acid probe that is fixed to the substrate and is hybridized with a sample to have a signal change; and at least one cavity that is filled with a specific liquid containing the sample and causing the hybridization of the nucleic acid probe with the sample. The array in this arrangement effectively enhances the reproducibility and the efficiency of hybridization with the signal probe.

Abstract: A novel nucleotide derivative, in case of existing as a member of a single-stranded sequence, undergoing a change in the fluorescent signal intendity depending on the corresponding base type in the partner strand with which the single-stranded sequence is hybridized, and which is a thymin/uracil derivative (1) emitting light most intensely when a confronting base in the partner strand with which the single-stranded nucleotide sequence is hybridized is adenine; a cytosine derivative (2) emitting light most intensely when the confronting base is guanine; an adenine derivative (3) emitting light most intensely when the confronting base is cytosine; a guanine derivative (4) emitting light most intensely when the confronting base is cytosine or thymine/uracil; and an adrnine derivative (5) emitting light most intensely when the confronting base is thymine/uracil/.

Abstract: This invention provides a novel gene that can impart salt stress tolerance to plants for a long period of time and salt stress tolerant transgenic plants to which such gene has been introduced. Such novel gene encodes the following protein (a), (b), or (c), and such salt stress tolerant transgenic plant has such gene introduced therein: (a) a protein consisting of the amino acid sequence as shown in SEQ ID NO: 2 in the Sequence Listing; (b) a protein consisting of an amino acid sequence derived from the amino acid sequence as shown in SEQ ID NO: 2 in the Sequence Listing by deletion, substitution, or addition of one or several amino acid residues and having activity of imparting salt stress tolerance to plants; or (c) a protein consisting of an amino acid sequence derived from the amino acid sequence as shown in SEQ ID NO: 2 in the Sequence Listing by deletion, substitution, or addition of one or several amino acid residues and having UDP-glucose 4-epimerase activity.

Abstract: A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

Abstract: A semiconductor integrated circuit device is provided which includes an active region, a shallow groove isolation adjacent to the active region, and a semiconductor element formed in the active region and having a gate. The sum of a width of the active region and a width of the shallow groove isolation constitutes a minimum pitch in the direction of a gate width of the gate, and the width of the active region is set larger than one-half of the minimum pitch.

Abstract: A method of manufacture of a semiconductor device includes forming a gate insulating film and gate electrode made of polycrystalline silicon over a semiconductor substrate; implanting ions into the semiconductor substrate to form a semiconductor region as a source or drain; forming a cobalt film and a titanium nitride film over the semiconductor substrate to cover the gate electrode; carrying out annealing to cause a reaction between Co and Si and the semiconductor region to form a CoSi layer; carrying out wet cleaning to remove the titanium nitride film and unreacted cobalt film to leave the CoSi layer over the gate electrode and semiconductor region; carrying out annealing to cause a reaction between the CoSi layer and the gate electrode and semiconductor region to form a CoSi2 layer; carrying out HPM cleaning; and forming over the semiconductor substrate a silicon nitride film by low-pressure CVD to cover the gate electrode.

Abstract: A method of manufacture of a semiconductor device includes forming a gate insulating film and a gate electrode made of polycrystalline silicon over a semiconductor substrate; implanting ions into the semiconductor substrate to form a semiconductor region as a source or drain; forming a cobalt film and a titanium nitride film over the semiconductor substrate to cover the gate electrode; carrying out annealing to cause a reaction between Co and Si and the semiconductor region to form a CoSi layer; carrying out wet cleaning to remove the titanium nitride film and unreacted cobalt film to leave the CoSi layer over the gate electrode and semiconductor region; carrying out annealing to cause a reaction between the CoSi layer and the gate electrode and semiconductor region to form a CoSi2 layer; carrying out HPM cleaning; and forming over the semiconductor substrate a silicon nitride film by low-pressure CVD to cover the gate electrode.

Abstract: The present invention aims to provide a technique for stably immobilizing a probe on a carrier The present invention provides a linker compound represented by formula (1): wherein A represents a hydrogen atom, another substituent, a sugar, or a derivative thereof.

Abstract: A reaction cell is provided with a vessel-like cell main body and a circular piezoelectric/electrostrictive oscillator fixed to an outside of a bottom surface of the cell main body. The cell main body includes a circular bottom plate portion and a circumferential wall portion which rises from a circumferential edge of the bottom plate portion so as to thereby surround the bottom plate portion. The bottom plate portion and the circumferential wall portion are integrally formed from ceramics. A solution accommodation space is formed above the bottom plate portion and is partially enclosed by the circumferential wall portion. The piezoelectric/electrostrictive oscillator is concentrically adhered to the outside of the bottom surface of the cell main body.