Abstract: A gate electrode of each MISFET is formed on a substrate in an active region whose periphery is defined by an element isolation trench, and crosses the active region so as to extend from one end thereof to the other end thereof. The gate electrode has a gate length in a boundary region defined between the active region and the element isolation trench, which gate length is greater than a gate length in a central portion of the active region. The gate electrode is configured in an H-type flat pattern as a whole. Further, the gate electrode covers the whole of one side extending along a gate-length direction, of the boundary region defined between the active region L and the element isolation trench, and parts of two sides thereof extending along a gate-width direction. The MISFETs are respectively formed in electrically separated wells and are connected in series so as to constitute part of a reference voltage generating circuit.

Abstract: A semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step, there is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

Abstract: A shallow groove isolation structure (SGI) electrically insulates adjoining transistors on a semiconductor substrate. A pad oxide film is formed on the semiconductor substrate and an oxidation inhibition film is formed on the pad oxide film. Parts of the oxide inhibition film and pad oxide film are removed to form the groove. In particular, the pad oxide film is removed from an upper edge of the groove within a range of 5 to 40 nm. A region of the groove is oxidized in an oxidation environment with a cast ratio of hydrogen (H.sub.2) to oxygen (O.sub.2) being less than or equal to 0.5. At this ratio, the oxidizing progresses under low stress at the upper groove edges of the substrate thereby enabling rounding of the upper groove edges without creating a level difference at or near the upper groove edge on the substrate surface.

Abstract: The present invention is aimed at providing an anticancer agent which can inhibit the metastasis of cancer cells when used alone. In addition, the present invention is also aimed at providing an anticancer agent which can inhibit the metastasis of cancer cells while causing a small side effect and very small toxicity even for an extended time of administration. The cancer metastasis-inhibiting anticancer agent according to the present invention is characterized by containing sialic acid, its salt, a polymer of sialic acid or a salt of the polymer as an effective ingredient.

Abstract: A silicon oxide film 2 which is exposed from a side wall of a groove 4a is etched to displace the silicon oxide film 2 backward toward an active region. The displacement amount is set to be equal to or more than a film thickness (Tr) of a silicon oxide film 5 to be formed on an inner wall of the groove 4a in a later thermal oxidation step and equal to or less than twice the film thickness (Tr) thereof. A shoulder portion of the groove 4a can be rounded by a low-temperature heat treatment at 1000.degree. C. or less, by controlling a heat treatment period such that the film thickness (Tr) of the silicon oxide film 5 is more than the film thickness (Tp) of the silicon oxide film 2 and equal to or less than three times the film thickness (Tr) thereof (Tp<Tr.ltoreq.

Abstract: The present invention relates to the technology for inhibiting the cancer metastasis, and is aimed at the provision of a pharmaceutical composition for effectively inhibiting the metastasis of the cancer. A cancer metastasis inhibitor according to the present invention is characterized by containing a sugar chain separated from a surface of a Streptococcus agalactiae Ia type or Ib type as a main ingredient. Since the surface sugar chains of the Streptococcus agalactiae Ia type or Ib type have structures similar to surface sugar chains of the cancer cells, the former surface sugar chains adhere to E-selectin appearing in an intravascular endothelial cell, competitively inhibit the adhesion between intravascular endothelial cells and the cancer cells, and effectively prevent of the metastasis of the cancer, when the sugar chains exist in blood of a patient.

Abstract: A SRAM having its memory cell constructed to include transfer MISFETs to be controlled by word lines and a flip-flop circuit having driver MISFETs and load MISFETs. Plate electrodes of large area fixed on predetermined power source lines are arranged over the load MISFETs such that the plate electrodes over the offset region of the load MISFETs are formed with an opening. A silicon nitride film having a thickness permeable to hydrogen but not to humidity is formed over the transfer MISFETs and the driver MISFETs formed over the main surface of a semiconductor substrate and the load MISFETs formed of a polycrystalline silicon film deposited on the driver MISFETs.

Abstract: When the source and drain regions (an n.sup.- type semiconductor region and an n.sup.+ type semiconductor region) of a complementary MISFET and a p-type semiconductor region for use as a punch-through stopper are formed in a p-type well in a substrate having a p- and an n-type well, p-type impurities for the punch-through stopper are suppressed from being supplied to the feeding portion (an n.sup.+ type semiconductor region) of the n-type well.

Abstract: A SRAM having its memory cell constructed to include transfer MISFETs to be controlled by word lines and a flip-flop circuit having driver MISFETs and load MISFETs. Plate electrodes of large area fixed on predetermined power source lines are arranged over the load MISFETs such that the plate electrodes over the offset region of the load MISFETs are formed with an opening. A silicon nitride film having a thickness permeable to hydrogen but not to humidity is formed over the transfer MISFETs and the driver MISFETs formed over the main surface of a semiconductor substrate and the load MISFETs formed of a polycrystalline silicon film deposited on the driver MISFETs.

Abstract: A graphic editor for performing various editing processes such as inputting, moving, copying, and deleting a graphic pattern and a line on a display screen in a graphic editing system such as a CAD, etc. The graphic editor realizes a user interface for simultaneously selecting an object to be processed and a function, thus improving the efficiency of the editing operation. The editor comprises an area specifier for specifying an area as a rectangle having a diagonal whose start and end points are specified by the area specifier, and a graphic operating unit for determining the existence of a symbol or a line in a specified area to give a predetermined process on the symbol or the line. The predetermined processes can be identified by determining whether or not a symbol and/or a whole or a part of a line exists in or crosses a specified area.

Abstract: An enzyme-fixed bioreactor, including a reaction column, enzyme-fixed catalyst particles uniformly and densely filled in the reaction column, the catalyst particles being composed of carrier sepiolite particles consisting essentially of sepiolite and an enzyme carried on the surface of the carrier sepiolite particles. The bioreactor has stable heat resistant and chemical properties, high productivity, and is economically superior to prior art, without fear of destruction of the catalyst, short path, and clogging in the reaction column.