Abstract: The present invention provides a bloat controlling agent for a ruminant, comprising cashew nut shell liquid.

Abstract: The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420° C. or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.

Abstract: Provided is an amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed low dielectric constant, a semiconductor device including the amorphous carbon film and a technology for forming the amorphous carbon film. Since the amorphous carbon film is formed by controlling an additive amount of Si (silicon) during film formation, it is possible to form the amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed dielectric constant as low as 3.3 or less. Accordingly, when the amorphous carbon film is used as a film in the semiconductor device, troubles such as a film peeling can be suppressed.

Abstract: In order to provide a semiconductor device having good quality by keeping the relative permittivity of a High-K insulation film in a high state, or to provide a method for manufacturing a semiconductor device in which the relative permittivity of the High-K insulation film can be kept in a high state, a semiconductor device is disclosed that includes a silicon substrate, a gate electrode layer, and a gate insulation film between the silicon substrate and the gate electrode layer. The gate insulation film is a high relative permittivity (high-k) film being formed by performing a nitriding treatment on a mixture of a metal and silicon. The High-K film itself becomes a nitride so as to prevent SiO2 from being formed.

Abstract: A film forming method is characterized in that the method is provided with a step of introducing a processing gas including inorganic silane gas into a processing chamber, in which a mounting table composed of ceramics including a metal oxide is arranged, and precoating an inner wall of the processing chamber including a surface of the mounting table with a silicon-containing nonmetal thin film; a step of mounting a substrate to be processed on the mounting table precoated with the nonmetal thin film; and a step of introducing a processing gas including organic silane gas into the processing chamber, and forming a silicon-containing nonmetal thin film on a surface of the substrate mounted on the mounting table.

Abstract: For a substrate (W) placed in an airtight processing vessel (1), plasma is generated by introducing a microwave to a radial line slot antenna (4). Conditions are set such that the pressure in the processing vessel is in the range of from 7.32 Pa to 8.65 Pa, the microwave power is in the range of from 2000W to 2300W, the distance (L1) between the surface of the substrate and an opposed face of a raw-material supply member (3) is in the range of from 70 mm to 105 mm, and the distance (L2) between the surface of the substrate and an opposed face of a discharge gas supply member (2) is in the range of from 100 mm to 140 mm. Under these conditions, a raw-material gas consisting of a cyclic C5F8 gas is activated based on energy of the microwave. Consequently, film-forming species containing C4F6 ions and/or C4F6 radicals in a greater content can be obtained. Thus, a fluorine-added carbon film excellent in the leak properties and heat stability can be securely formed.

Abstract: A dielectric film (91) made of CF is deposited on a substrate. A protective layer comprising an SiCN film (93) is formed on the dielectric film (91). A film (94) serving as a hardmask made of SiCO is deposited on the protective layer by a plasma containing active species of silicon, carbon, and oxygen. When the protective layer is formed, an SiC film (92) is deposited on the dielectric film (91) by a plasma containing active species of silicon and carbon, and thereafter the SiCN film (93) is deposited on the SiC film (92) by a plasma containing active species of silicon, carbon, and nitrogen.

Abstract: The present invention provides a processing apparatus and a processing method, both of which can carry out a low-temperature process to allow active gas species to react with an oxide film on an object to be processed to form a product film and a heating process to heat the object to a predetermined temperature to evaporate the product film, in succession. This processing apparatus 12 is provided with a shielding plate 103 capable of entering a gap between the object W and a transparent window 28 and also withdrawing from the gap. On condition that the shielding plate 103 is closed to cut off irradiation heat from the transparent window 28, the product film is formed by allowing the active gas species of NF3 gas to react with a native oxide film on the object under the low-temperature condition. After that, upon closing the shielding plate 103, the native oxide film is removed by applying heat irradiated from a heating lamp 36 to the product film through the transparent window 28.

Abstract: The present invention provides a processing apparatus and a processing method, both of which can carry out a low-temperature process to allow active gas species to react with an oxide film on an object to be processed to form a product film and a heating process to heat the object to a predetermined temperature to evaporate the product film, in succession. This processing apparatus 12 is provided with a shielding plate 103 capable of entering a gap between the object W and a transparent window 28 and also withdrawing from the gap. On condition that the shielding plate 103 is closed to cut off irradiation heat from the transparent window 28, the product film is formed by allowing the active gas species of NF3 gas to react with a native oxide film on the object under the low-temperature condition. After that, upon closing the shielding plate 103, the native oxide film is removed by applying heat irradiated from a heating lamp 36 to the product film through the transparent window 28.

Abstract: A fluorine-containing carbon film excellent in heat stability is formed by using C5F8 gas having a moisture content of 60×10?9 volume ratio or below. A purifier 2 packed with particles having hydrophilic or reducing surface layers is placed in a gas supply line connecting a process gas source 1 for supplying C5F8 gas and a film deposition unit 3 for depositing a fluorine-containing carbon film on a substrate by using a plasma produced by ionizing C5F8 gas. C5F8 gas is passed through the purifier 2 to remove moisture from the C5F8 gas. The C5F8 gas supplied to the film deposition unit 3 to deposit a fluorine-containing carbon film has a moisture content on the order of 20×10?9 volume ratio. A fluorine-containing carbon film thus deposited contains a very small amount of moisture.

Abstract: Disclosed are a substrate for electronic devices such as semiconductor devices and a method for processing the same, In the processing method, firstly a substrate for electronic devices is prepared and an insulating film (I) composed of a fluorocarbon (CF) is formed on the surface of the substrate. Then, fluorine (F) atoms exposed in the surface of the insulating film (I) are removed therefrom by bombarding the surface of the insulating film (I) with, for example, active species (KR+) produced in a krypton (Kr) gas plasma. In this connection, the substrate is kept out of contact with moisture at least from immediately after the insulating film forming step until completion of the fluorine removing step.

Abstract: A microwave is radiated into a processing chamber (1) from a planar antenna member of an antenna (7) through a dielectric plate (6). With this, a C5F8 gas supplied into the processing chamber (1) from a gas supply member (3) is changed (activated) into a plasma so as to form a fluorine-containing carbon film of a certain thickness on a semiconductor wafer (W). Each time a film forming process of forming a film on one wafer is carried out, a cleaning process and a pre-coating process are carried out. In the cleaning process, the inside of the processing chamber is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating process, the C5F8 gas is changed into a plasma, and a pre-coat film of fluorine-containing carbon thinner than the fluorine-containing carbon film formed in the film forming process is formed.

Abstract: In order to provide a semiconductor device having good quality by keeping the relative permittivity of a High-K insulation film in a high state, or to provide a method for manufacturing a semiconductor device in which the relative permittivity of the High-K insulation film can be kept in a high state, a semiconductor device is disclosed that includes a silicon substrate, a gate electrode layer, and a gate insulation film between the silicon substrate and the gate electrode layer. The gate insulation film is a high relative permittivity (high-k) film being formed by performing a nitriding treatment on a mixture of a metal and silicon. The High-K film itself becomes a nitride so as to prevent SiO2 from being formed.

Abstract: In a substrate-processing method and a substrate-processing apparatus according to the invention, a natural oxide film that has been formed on each surface layer of a gate 21, a source 15 and a drain 17 of a MOSFET 11 is removed by an NF3 gas that has been activated. Then, a Co film 91 is formed on each surface of the gate 21, the source 15 and the drain 17 from which the natural oxide film has been removed. Then, a low-temperature annealing process is conduced to the MOSFET, so that the Co film 91 and each silicon compound of the gate 21, the source 15 and the drain 17 react with each other. Thus, a metal silicide layer is formed on a surface layer of each silicon compound. Therefore, a processing method without a high-temperature annealing process, whose thermal history may have an adverse effect on distribution of impurities in the substrate, can be provided.

Abstract: The present invention provides method and apparatus for surface treatment which, when employed in process steps of manufacturing semiconductor devices, can result in the final products having enhanced reliability. According to the surface processing method, an obeject to be processed W is introduced in a processing vessel 10, which is then supplied with ClF3 gas serving as cleaning gas from a supply unit 26. The ClF3 gas is bound to the surface of the object to be processed W, and although the supply of the gas to the processing vessel is interrupted, the ClF3 gas bound to the surface of the object to be processed W serves to clean the surface of the object to be processed. Next, reducing gas is introduced into the processing vessel W to remove chlorine from the object to be processed W, the chlorine being derived from the ClF3 gas. After that, the introduction of the reducing gas is interrupted, and the cleaned object to be processed W is exported from the processing vessel 10.

Abstract: The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420° C. or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.

Abstract: A plasma-assisted deposition system for carrying out a plasma-assisted deposition method has a processing vessel defining a vacuum chamber and having an open upper end, a dielectric member covering the open upper end of the processing vessel, and a flat antenna member placed on the upper surface of the dielectric member. A coaxial waveguide has one end connected to the upper surface of the flat antenna member and the other end connected to a microwave generator. The flat antenna member is provided with many slots of a length corresponding to half the wavelength of a microwave arranged on concentric circles. For example, a circularly polarized microwave is radiated from the slots into a processing space to produce a source gas plasma. Electron temperature in the plasma in terms of mean square velocity is 3 eV or below and the electron density in the plasma is 5×1011 electrons per cubic centimeter or above. The plasma is used for depositing a fluorine-containing carbon film.

Abstract: A film forming method comprise the steps of forming a F-doped carbon film by using a source gas containing C and F, and modifying the F-doped carbon film by radicals, the source gas having a F/C ratio, defined as a ratio of a number of F atoms to a number of C atoms in the source gas molecule, wherein the F/C ratio is larger than 1 but smaller than 2.

Abstract: The present invention provides method and apparatus for surface treatment which, when employed in process steps of manufacturing semiconductor devices, can result in the final products having enhanced reliability. According to the surface processing method, an object to be processed W is introduced in a processing vessel 10, which is then supplied with ClF3 gas serving as cleaning gas from a supply unit 26. The ClF3 gas is bound to the surface of the object to be processed W, and although the supply of the gas to the processing vessel is interrupted, the ClF3 gas bound to the surface of the object to be processed W serves to clean the surface of the object to be processed. Next, reducing gas is introduced into the processing vessel W to remove chlorine from the object to be processed W, the chlorine being derived from the ClF3 gas. After that, the introduction of the reducing gas is interrupted, and the cleaned object to be processed W is exported from the processing vessel 10.

Abstract: The present invention provides a processing apparatus and a processing method, both of which can carry out a low-temperature process to allow active gas species to react with an oxide film on an object to be processed to form a product film and a heating process to heat the object to a predetermined temperature to evaporate the product film, in succession. This processing apparatus 12 is provided with a shielding plate 103 capable of entering a gap between the object W and a transparent window 28 and also withdrawing from the gap. On condition that the shielding plate 103 is closed to cut off irradiation heat from the transparent window 28, the product film is formed by allowing the active gas species of NF3 gas to react with a native oxide film on the object under the low-temperature condition. After that, upon closing the shielding plate 103, the native oxide film is removed by applying heat irradiated from a heating lamp 36 to the product film through the transparent window 28.