Abstract: A binder composition for an electrode of an electric storage device is provided. The binder composition comprises (A) at least one polymer selected from the group consisting of polyamic acids and imidized polymers thereof having an imidization rate of 50% or less and (B) water. The ratio Ma/Mb of the content of the polymer (A), Ma (parts by mass), to the content of the water (B), Mb (parts by mass), ranges from 500 to 5,000. The binder composition for an electrode of the present invention provides an electric storage device having a large charge/discharge capacity and a low degree of capacity degradation due to repetition of a charge/discharge cycle.

Abstract: The present invention is directed to a method for forming a crystalline cobalt silicide film, comprising the steps of: applying to a surface made of silicon a composition obtained by mixing a compound represented by the following formula (1A) or (1B): SinX2n+2??(1A) SimX2m??(1B) wherein each X in the formulas (1A) and (1B) is a hydrogen atom or a halogen atom, n is an integer of 1 to 10, and m is an integer of 3 to 10, or a polymer thereof with a zero-valent cobalt complex to form a coating film; heating the coated film at 550 to 900° C. so as to form a two-layer film which is composed of a first layer made of a crystalline cobalt silicide on the surface made of silicon and a second layer containing silicon atoms, oxygen atoms, carbon atoms and cobalt atoms on the first layer; and removing the second layer of the two-layer film.

Abstract: The present invention is directed to a method for forming a patterned conductive film, which comprises the step of bringing a substrate having a layer made of platinum microcrystal particles formed thereon in a pattern and a complex of an amine compound and an aluminum hydride into contact with each other at a temperature of 50 to 120° C. According to the present invention, there is provided a method for forming a patterned conductive layer, which can ensure electrical bonding with a substrate and also can be suitably applied to various electronic devices, simply without requiring a massive and heavy apparatus.

Abstract: A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source 1, a condenser lens electrode 2, a blanking electrode 3, a scanning electrode 4, a sample stage 10 on which a sample 9 is mounted, a secondary charged particle detector 8 that detects a secondary charged particle 7 generated from the sample 9 in response to the charged particle beam irradiation, a reservoir 14 that accommodates cyclopentasilane as a source gas, and a gas gun 11 that supplies the source gas to the sample 9.

Abstract: A container containing a cobalt carbonyl complex and a gas that contains carbon monoxide, and a cobalt carbonyl complex composition comprising a cobalt carbonyl complex and a solvent, wherein the concentration of carbon monoxide dissolved in the solvent is 0.001 to 1 wt %. Since the cobalt carbonyl complex contained in the above container or the above composition can retain its sublimation properties for a long time without being converted into a stable complex, when a cobalt film is formed by chemical vapor deposition using the container and the composition, a high-quality film can be formed by a simple process, and the production cost of the cobalt film can be reduced due to high use efficiency of the precursor.

Abstract: A container containing a cobalt carbonyl complex and a gas that contains carbon monoxide, and a cobalt carbonyl complex composition comprising a cobalt carbonyl complex and a solvent, wherein the concentration of carbon monoxide dissolved in the solvent is 0.001 to 1 wt %. Since the cobalt carbonyl complex contained in the above container or the above composition can retain its sublimation properties for a long time without being converted into a stable complex, when a cobalt film is formed by chemical vapor deposition using the container and the composition, a high-quality film can be formed by a simple process, and the production cost of the cobalt film can be reduced due to high use efficiency of the precursor.

Abstract: A container containing a cobalt carbonyl complex and a gas that contains carbon monoxide, and a cobalt carbonyl complex composition comprising a cobalt carbonyl complex and a solvent, wherein the concentration of carbon monoxide dissolved in the solvent is 0.001 to 1 wt %. Since the cobalt carbonyl complex contained in the above container or the above composition can retain its sublimation properties for a long time without being converted into a stable complex, when a cobalt film is formed by chemical vapor deposition using the container and the composition, a high-quality film can be formed by a simple process, and the production cost of the cobalt film can be reduced due to high use efficiency of the precursor.

Abstract: The present invention is directed to a method for forming a patterned conductive film, which comprises the step of bringing a substrate having a layer made of platinum microcrystal particles formed thereon in a pattern and a complex of an amine compound and an aluminum hydride into contact with each other at a temperature of 50 to 120° C. According to the present invention, there is provided a method for forming a patterned conductive layer, which can ensure electrical bonding with a substrate and also can be suitably applied to various electronic devices, simply without requiring a massive and heavy apparatus.

Abstract: The present invention is directed to a method for forming a patterned conductive film, which comprises the step of bringing a substrate having a layer made of platinum microcrystal particles formed thereon in a pattern and a complex of an amine compound and an aluminum hydride into contact with each other at a temperature of 50 to 120° C. According to the present invention, there is provided a method for forming a patterned conductive layer, which can ensure electrical bonding with a substrate and also can be suitably applied to various electronic devices, simply without requiring a massive and heavy apparatus.

Abstract: A composition containing a high order silane compound and a solvent, wherein the solvent contains a cyclic hydrocarbon which has one or two double bonds and no alkyl group, is composed of only carbon and hydrogen and has a refractive index of 1.40 to 1.51, a specific permittivity of not more than 3.0 and a molecular weight of not more than 180. Method of manufacturing a film-coated substrate using the high order silane composition.

Abstract: A binder composition for an electrode of an electric storage device is provided. The binder composition comprises (A) at least one polymer selected from the group consisting of polyamic acids and imidized polymers thereof having an imidization rate of 50% or less and (B) water. The ratio Ma/Mb of the content of the polymer (A), Ma (parts by mass), to the content of the water (B), Mb (parts by mass), ranges from 500 to 5,000. The binder composition for an electrode of the present invention provides an electric storage device having a large charge/discharge capacity and a low degree of capacity degradation due to repetition of a charge/discharge cycle.

Abstract: A composition for forming an aluminum film, comprising a complex represented by the following formula (1) and a complex represented by the following formula (2), the molar ratio of the complex represented by the following formula (1) and the complex represented by the following formula (2) being 40:60 to 85:15: AlH3.NR1R2R3??(1) AlH3.(NR1R2R3)2??(2) (in the above formulas (1) and (2), R1, R2 and R3 are each independently a hydrogen atom, alkyl group, cycloalkyl group, alkenyl group, alkynyl group, aryl group or aralkyl group.).

Abstract: A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source 1, a condenser lens electrode 2, a blanking electrode 3, a scanning electrode 4, a sample stage 10 on which a sample 9 is mounted, a secondary charged particle detector 8 that detects a secondary charged particle 7 generated from the sample 9 in response to the charged particle beam irradiation, a reservoir 14 that accommodates cyclopentasilane as a source gas, and a gas gun 11 that supplies the source gas to the sample 9.

Abstract: The present invention is directed to a method for forming a patterned conductive film, which comprises the step of bringing a substrate having a layer made of platinum microcrystal particles formed thereon in a pattern and a complex of an amine compound and an aluminum hydride into contact with each other at a temperature of 50 to 120° C. According to the present invention, there is provided a method for forming a patterned conductive layer, which can ensure electrical bonding with a substrate and also can be suitably applied to various electronic devices, simply without requiring a massive and heavy apparatus.

Abstract: The present invention is directed to a method for forming a crystalline cobalt silicide film, comprising the steps of: applying to a surface made of silicon a composition obtained by mixing a compound represented by the following formula (1A) or (1B): SinX2n+2??(1A) SimX2m??(1B) wherein each X in the formulas (1A) and (1B) is a hydrogen atom or a halogen atom, n is an integer of 1 to 10, and m is an integer of 3 to 10, or a polymer thereof with a zero-valent cobalt complex to form a coating film; heating the coated film at 550 to 900° C. so as to form a two-layer film which is composed of a first layer made of a crystalline cobalt silicide on the surface made of silicon and a second layer containing silicon atoms, oxygen atoms, carbon atoms and cobalt atoms on the first layer; and removing the second layer of the two-layer film.

Abstract: A patterning method comprising the steps of: the first step of disposing at least one silane compound selected from the group consisting of a silicon hydride compound and a silicon halide compound in the space between a substrate and a patterned mold; and the second step of subjecting the silane compound to at least one treatment selected from a heat treatment and an ultraviolet exposure treatment. A pattern composed of silicon can be formed by carrying out the second step in an inert atmosphere or a reducing atmosphere and a pattern composed of silicon oxide can be formed by carrying out at least part of the second step in an oxygen-containing atmosphere.

Abstract: A composition comprising a high order silane compound and a solvent, wherein the solvent contains a cyclic hydrocarbon which has one or two double bonds and no alkyl group, is composed of only carbon and hydrogen and has a refractive index of 1.40 to 1.51, a specific permittivity of not more than 3.0 and a molecular weight of not more than 180. A high-quality film which is safe and has a desired film thickness can be formed from the high order silane composition of the present invention by a liquid-phase process.

Abstract: A container containing a cobalt carbonyl complex and a gas that contains carbon monoxide, and a cobalt carbonyl complex composition comprising a cobalt carbonyl complex and a solvent, wherein the concentration of carbon monoxide dissolved in the solvent is 0.001 to 1 wt %. Since the cobalt carbonyl complex contained in the above container or the above composition can retain its sublimation properties for a long time without being converted into a stable complex, when a cobalt film is formed by chemical vapor deposition using the container and the composition, a high-quality film can be formed by a simple process, and the production cost of the cobalt film can be reduced due to high use efficiency of the precursor.

Abstract: A composition for forming an aluminum film, comprising a complex represented by the following formula (1) and a complex represented by the following formula (2), the molar ratio of the complex represented by the following formula (1) and the complex represented by the following formula (2) being 40:60 to 85:15: AlH3.NR1R2R3??(1) AlH3.(NR1R2R3)2??(2) (in the above formulas (1) and (2), R1, R2 and R3 are each independently a hydrogen atom, alkyl group, cycloalkyl group, alkenyl group, alkynyl group, aryl group or aralkyl group.).

Abstract: A polymer production process comprising reacting a compound represented by the following formula (1) in the presence of a binuclear metal complex represented by the following formula (2). R4-nMHn??(1) (in the formula (1), R is a monovalent organic group, M is a silicon atom or a germanium atom, and n is 2 or 3.) [CpM(?-CH2)]2??(2) (in the formula (2), Cp is a cyclopentadienyl-based ligand, M is a metal atom selected from Rh and Ir, and the bond between M's is a double bond.