Abstract: There are provided a silicon-film-forming composition containing silicon particles and a dispersion medium and a method for forming a silicon film by forming a coating film of the silicon-film-forming composition on a substrate and subjecting the coating film to instantaneous fusion, a heat treatment or a light treatment. According to the composition and the method, a polysilicon film with a desired thickness which may be used as a silicon film for a solar battery can be formed efficiently and easily.

Abstract: A composition capable of forming a metal ruthenium film and a ruthenium oxide film by a simple application/baking process, a process for forming a metal ruthenium film and a ruthenium oxide film from the composition, a metal ruthenium film and a ruthenium oxide film formed by the process, and electrodes formed of the films. A solution composition comprising a specific ruthenium complex. The coating film of this solution composition is heated in an atmosphere containing no oxygen or an atmosphere containing oxygen to form a metal ruthenium film or a ruthenium oxide film, respectively, and electrodes formed of the films.

Abstract: Provided is a method of forming a silicon thin-film which comprises a step of arranging in one or more parts of a liquid arranging surface liquid which contains a silicide comprising ring silane and/or a derivative thereof, such ring silane comprising silicon and hydrogen, and a step of forming a silicon thin-film by vaporizing silicide from liquid and supplying the silicide to a thin-film-forming surface.

Abstract: A composition for forming a high-quality tantalum film which is advantageously used as an capacitor insulating film and a process for forming the high-quality tantalum film. The composition for forming a tantalum oxide film, which comprises at least one tantalum compound selected from the group consisting of a reaction product of a compound capable of reacting with a tantalum alkoxide and a tantalum alkoxide and a hydrolyzate of the reaction product, and a solvent, and the process for forming the tantalum oxide film by applying this composition to a substrate and heating it.

Abstract: It is an object of the present invention to provide a high order silane composition that contains a polysilane having a higher molecular weight than conventionally, this being from the viewpoints of wettability when applying onto a substrate, boiling point and safety, and hence in particular enables a high-quality silicon film to be formed easily, and also a method of forming an excellent silicon film using the composition. The present invention attains this object by providing a high order silane composition containing a polysilane obtained through photopolymerization by irradiating a solution of a photopolymerizable silane or a photopolymerizable like-liquid silane with ultraviolet light. Moreover, the present invention provides a method of forming a silicon film comprising the step of applying such a high order silane composition onto a substrate.

Abstract: There are provided a conductive film forming composition capable of forming wiring or an electrode which can be suitably used in a variety of electronic devices, easily and inexpensively, a method for forming a film using the composition, a conductive film formed by the method, and wiring or an electrode which comprises the film.

Abstract: Provided is a method of forming a silicon thin-film which comprises a step of arranging in one or more parts of a liquid arranging surface liquid which contains a silicide comprising ring silane and/or a derivative thereof, such ring silane comprising silicon and hydrogen, and a step of forming a silicon thin-film by vaporizing silicide from liquid and supplying the silicide to a thin-film-forming surface.

Abstract: A solution containing a cyclic silane compound, which does not contain carbon, and/or a silane compound modified by boron or phosphorus is applied onto a substrate and a silicon precursor film is formed, and the film is then transformed into semiconductor silicon by heat and/or light treatment. Thereby, it is possible to easily produce a silicon film having satisfactory characteristics as an electronic material at low costs, differing from the vacuum process, such as by CVD methods.

Abstract: A coating composition comprising a silicon compound represented by the following formula (1): SinX1n  (1) wherein X1 is a hydrogen atom or a halogen atom, and n is an integer of 4 or more, on the proviso that n occurrences of X1 may be the same as or different from one another, or a modified silane compound represented by the following formula (2): SinX2mYl  (2) wherein X2 is a hydrogen atom or a halogen atom, Y is a boron atom or a phosphorus atom, n is an integer of 3 or more, l is an integer of 1 or more, and m is an integer of n to 2n+3, on the proviso that m occurrences of X2 may be the same as or different from one another, and solvent thereof. This coating composition is suitably used in the production of a device for forming a silicon film or a boron- or phosphorous-doped silicon film on a substrate having a large area.

Abstract: There is provided a process for forming a silicon oxide film which is useful as an electrical insulating film, dielectric film or protective film as used in LSI, thin-film transistor, photoelectric converter, photosensitive body and the like. The process comprises forming a coating film from a polysilane compound represented by the formula SinRm (wherein n is an integer of 3 or more, m is an integer of n to 2n+2, and a plurality of R's are independently a hydrogen atom or an alkyl group) and oxidizing the coating film to form the silicon oxide film.

Abstract: A solar battery is provided having a structure in which at least two semiconductor thin-films are disposed one over the other between a pair of electrodes, each semiconductor thin-film differing from the other in the impurity concentration thereof and/or the type of semiconductor. Formation of at least one of the semiconductor thin-films consists of coating a liquid coating composition containing a silicon compound so as to form a coating film and a step of converting the coating film into a silicon film by heat treatment and/or light treatment.

Abstract: A composition capable of forming a metal ruthenium film and a ruthenium oxide film by a simple application/baking process, a process for forming a metal ruthenium film and a ruthenium oxide film from the composition, a metal ruthenium film and a ruthenium oxide film formed by the process, and electrodes formed of the films.

Abstract: Silylcyclopentasilane and a solution composition for forming a silicon film containing the same, which is used for forming a silicon film on the surface of a substrate. There is also disclosed spiro[4.4] nonasilane.

Abstract: A composition for forming a high-quality tantalum film which is advantageously used as an capacitor insulating film and a process for forming the high-quality tantalum film. The composition for forming a tantalum oxide film, which comprises at least one tantalum compound selected from the group consisting of a reaction product of a compound capable of reacting with a tantalum alkoxide and a tantalum alkoxide and a hydrolyzate of the reaction product, and a solvent, and the process for forming the tantalum oxide film by applying this composition to a substrate and heating it.

Abstract: A process capable of forming a silicon film on a substrate efficiently, for example, at a high yield and a high forming rate with simple operation and device unlike CVD and plasma CVD.

Abstract: A method of producing a liquid crystal alignment layer comprising exposing an organic film to polarized pulse laser beam to align molecules in a surface portion of the organic film. There is provided a liquid crystal alignment layer composed of a polyamide film having aligned molecules in a surface portion.

Abstract: Silylcyclopentasilane and a solution composition for forming a silicon film containing the same, which is used for forming a silicon film on the surface of a substrate. There is also disclosed spiro[4.4]nonasilane.

Abstract: A liquid crystal aligning agent composed of a polymer containing a moiety having two aromatic nuclei and an ethylene carbonyl group therebetween. The liquid crystal aligning agent is converted to a liquid crystal alignment film by irradiation a thin film of the agent with a linearly polarized ray.

Abstract: A liquid crystal alignment agent containing at least two kinds of polymers selected from the group consisting of polyamic acids and imidized polymers and having a structure obtained by dehydration and ring closure of polyamic acid. In the at least two kinds of polymers contained in the liquid crystal alignment agent, the polymer of higher imidization degree has a smaller surface free energy. The liquid crystal alignment agent gives a liquid crystal display device having less stuck image and high pretilt angle.

Abstract: There are provided a polyamic acid obtainable by reacting a diamine compound of the formula (1) ##STR1## wherein R.sup.1 is an alkyl group having 1 to 12 carbon atoms, a haloalkyl group having 1 to 12 carbon atoms or a halogen atom, each of X and Y is independently a divalent linking group,with a tetracarboxylic acid dianhydride; a polyimide obtainable by dehydrating and ring-closing the above polyamic acid; and a liquid crystal aligning agent containing the above polyamic acid and/or the above polyimide.