Abstract: To carry out drying of printing ink with the use of Nano sized high-temperature dryness steam. Nano sized high-temperature dryness steam being clustered on Nano oder is generated and jetted to the print side of printed material so that the Nano sized high-temperature dryness steam imparts intramolecular vibrational energy to ink of the print side. Consequently, the Nano sized high-temperature dryness steam being clustered on Nano oder not only passes through fiber pores in the printed material but also collides with the ink of the print side. The Nano sized high-temperature dryness steam having collided with the ink of the print side imparts thermally excited energy as intramolecular vibrational energy to the ink containing polar molecules. The ink is dried by the intramolecular energy.

Abstract: A rotating electrical machine that includes a stator formed by winding a coil around a stator core of a substantially cylindrical shape; and a rotor rotatably supported at an inside in a radial direction of the stator, wherein at least one coil end portion in an axial direction of the stator is a curved coil end portion formed to be curved inward in a radial direction of the stator core.

Abstract: A disclosed image forming apparatus includes plural image creating units arranged along a belt surface of a transfer belt; a first electric motor for driving a fixing unit; a second electric motor for driving one of the image creating units and the transfer belt; a third electric motor for driving the rest of the image creating units; a detecting unit for detecting a remaining toner amount in each image creating unit; a timing setting unit for determining a startup timing according to the remaining toner amount and delaying the startup timing if the remaining toner amount is large; and a startup control unit for starting up each of the first electric motor, the second electric motor, and, according to need, the third electric motor, one at a time after the preceding one has been started up, according to the determined startup timings.

Abstract: A partial oxide film with well regions formed therebeneath isolates transistor formation regions in an SOI layer from each other. A p-type well region is formed beneath part of the partial oxide film which isolates NMOS transistors from each other, and an n-type well region is formed beneath part of the partial oxide film which isolates PMOS transistors from each other. The p-type well region and the n-type well region are formed in side-by-side relation beneath part of the partial oxide film which provides isolation between the NMOS and PMOS transistors. A body region is in contact with the well region adjacent thereto. An interconnect layer formed on an interlayer insulation film is electrically connected to the body region through a body contact provided in the interlayer insulation film. A semiconductor device having an SOI structure reduces a floating-substrate effect.

Abstract: An isolation insulating film (5) of partial-trench type is selectively formed in an upper surface of a silicon layer (4). A power supply line (21) is formed above the isolation insulating film (5). Below the power supply line (21), a complete isolation portion (23) reaching an upper surface of an insulating film (3) is formed in the isolation insulating film (5). In other words, a semiconductor device comprises a complete-isolation insulating film which is so formed as to extend from the upper surface of the silicon layer (4) and reach the upper surface of insulating film (3) below the power supply line (21). With this structure, it is possible to obtain the semiconductor device capable of suppressing variation in potential of a body region caused by variation in potential of the power supply line.

Abstract: A driving apparatus includes a transmission mechanism portion; a motor housed in a motor housing located at an engine side of the transmission mechanism portion; and a clutch interposed between an engine output shaft and an input shaft of the transmission mechanism portion, wherein: a secondary side of the clutch, which is connected to the input shaft, is configured by a cover; a rotor of the motor is integrally connected to the cover, which is the secondary side of the clutch; a stator of the motor is fixed to the motor housing; a front hub positioned at the engine side of the cover is rotatably supported at a front wall member of the motor housing; and a rear hub positioned at the transmission mechanism portion side of the cover is rotatably supported at a rear wall member of the motor housing.

Abstract: A recessed portion is provided in first and second insulating films, the first insulating film being stacked on a semiconductor wafer, the second insulating film being stacked on the first insulating film. The first and second insulating films are processed to form wiring in a formation region of the semiconductor wafer in which an acceleration sensor is to be formed. After a sacrificial film is stacked on the wiring and processed, a conductive film is stacked on the wiring and processed to form a plurality of thin film structures in the formation region. The recessed portion surrounds the formation region.

Abstract: The present invention provides a pharmaceutical composition that can efficiently achieve its medicinal action by having excellent basic pharmacologically active substance absorbency, even the basic pharmacologically active substance is poorly soluble, the pharmaceutical composition being prepared by adding (i) a basic pharmacologically active substance together with (ii) a fatty acid and organic acid glycerol ester and/or fatty acid and organic acid polyglycerol ester.

Abstract: An image formation apparatus, an image formation method, an image formation program, and a recording medium are disclosed. The image formation apparatus includes a first driving source for driving a feed roller and a fixing unit, a second driving source for driving at least one of plural photo conductors and a middle transfer belt, and a third driving source for driving the photo conductors other than the photo conductor driven by the second driving source. The image formation apparatus further includes a temperature detecting unit for determining whether temperature of the fixing unit is greater than a predetermined threshold value, and a control unit for driving the driving sources in different sequences according to a result of the determination.

Abstract: A first interconnection is formed along a groove of a substrate and on a bottom surface of the groove, and has a first thickness. A second interconnection is electrically connected to the first interconnection and has a second thickness larger than the first thickness. An acceleration sensing unit is electrically connected to the second interconnection. A sealing unit has a portion opposed to the substrate with the first interconnection therebetween, and surrounds the second interconnection and the acceleration sensing unit on the substrate. A cap is arranged on the sealing unit to form a cavity on a region of the substrate surrounded by the sealing unit. Thereby, airtightness of the cavity can be ensured and also an electric resistance of the interconnection connected to the acceleration sensing unit can be reduced.

Abstract: In an electrostatic-capacitance-type acceleration sensor, water, etc. penetrating into a sealed space incorporating an acceleration detector having a movable electrode 6, and sticking of the movable electrode 6 to a cap 8 due to static charge accumulated on the cap 8 during the anodic bonding being performed are prevented. A conductive shielding film 9 that can be extendedly transformed on the entire inner face of the cap 8 constituting the sealed space is provided, which is not only extendedly arranged so as to be sandwiched between a bonding frame 7 and the cap 8, but also electrically connected to the movable electrode 6; thereby, even if unevenness exists on the surface of the bonding frame 7, not only sufficient anodic bonding between the bonding frame 7 and the cap 8 becomes possible, but also the electric field due to the static charge accumulated in the cap 8 can be shielded.

Abstract: A vehicle control device including an input member drive-connected to a power source; a mechanical pump; an electric pump assisting the mechanical pump; a drive mechanism transmitting the rotational driving force of the input member to an output member; a fluid coupling between the input member and the drive transmission mechanism and including a lock-up engagement element which receives hydraulic oil discharged from the mechanical pump and the electric pump to operate; a state detection unit that detects the state of the one or more factors that the discharge of the electric pump; and a control unit which executes a first or second control mode, wherein the first control mode permits engagement of the lock-up engagement element if a first condition is satisfied based on the one or more factors, and wherein a second control mode inhibits engagement of the lock-up engagement element if the first condition is not satisfied.

Abstract: The present invention aims to provide a method for producing, by a simple method, drug-containing wax matrix granules, particularly drug-containing wax matrix granules having an average particle diameter of 1 mm or lower, while avoiding liquid blockage due to the recrystallization of a molten drug during the period from a melting step to a spray step.

Abstract: A hybrid vehicle drive unit that includes an intermediate shaft, a starting clutch and motor generator that includes a stator that is fixed to an interior portion of a motor casing that is attached to a housing of the transmission; a rotor support member that is coupled to the clutch drum and has an inner end portion that is rotatably supported by an end wall of the motor casing and a rotor support portion that is fitted to an outer perimeter face of the clutch drum in an axial direction such that there is play between the rotor support portion and the outer perimeter face; and a rotor that is held by the rotor support portion of the rotor support member and is disposed such that an outer perimeter face of the rotor faces an inner perimeter face of the stator.

Abstract: An isolation insulating film (5) of partial-trench type is selectively formed in an upper surface of a silicon layer (4). A power supply line (21) is formed above the isolation insulating film (5). Below the power supply line (21), a complete isolation portion (23) reaching an upper surface of an insulating film (3) is formed in the isolation insulating film (5). In other words, a semiconductor device comprises a complete-isolation insulating film which is so formed as to extend from the upper surface of the silicon layer (4) and reach the upper surface of insulating film (3) below the power supply line (21). With this structure, it is possible to obtain the semiconductor device capable of suppressing variation in potential of a body region caused by variation in potential of the power supply line.

Abstract: An isolation insulating film (5) of partial-trench type is selectively formed in an upper surface of a silicon layer (4). A power supply line (21) is formed above the isolation insulating film (5). Below the power supply line (21), a complete isolation portion (23) reaching an upper surface of an insulating film (3) is formed in the isolation insulating film (5). In other words, a semiconductor device comprises a complete-isolation insulating film which is so formed as to extend from the upper surface of the silicon layer (4) and reach the upper surface of insulating film (3) below the power supply line (21). With this structure, it is possible to obtain the semiconductor device capable of suppressing variation in potential of a body region caused by variation in potential of the power supply line.

Abstract: A partial oxide film with well regions formed therebeneath isolates transistor formation regions in an SOI layer from each other. A p-type well region is formed beneath part of the partial oxide film which isolates NMOS transistors from each other, and an n-type well region is formed beneath part of the partial oxide film which isolates PMOS transistors from each other. The p-type well region and the n-type well region are formed in side-by-side relation beneath part of the partial oxide film which provides isolation between the NMOS and PMOS transistors. A body region is in contact with the well region adjacent thereto. An interconnect layer formed on an interlayer insulation film is electrically connected to the body region through a body contact provided in the interlayer insulation film. A semiconductor device having an SOI structure reduces a floating-substrate effect.

Abstract: A temperature detecting unit detects temperature of a fixing unit, and a control unit monitors temperatures detected by the temperature detecting unit. The control unit determines that the temperature detecting unit is abnormal when a first difference in temperatures in a first time period exceeds a first threshold.

Abstract: First and second semiconductor layers are attached to each other with an insulation layer sandwiched therebetween. An acceleration sensor device is formed in the first semiconductor layer. A control device for controlling the acceleration sensor device is formed on the second semiconductor layer. Through holes are formed in the second semiconductor layer, and an insulation layer is formed to cover the wall surfaces of the through holes. Through interconnections are formed within the through holes for electrically connecting the acceleration sensor device and the control device to each other. Accordingly, it is possible to obtain an acceleration sensor having excellent detection accuracy while having a reduced size, and a fabrication method thereof.

Abstract: An isolation insulating film (5) of partial-trench type is selectively formed in an upper surface of a silicon layer (4). A power supply line (21) is formed above the isolation insulating film (5). Below the power supply line (21), a complete isolation portion (23) reaching an upper surface of an insulating film (3) is formed in the isolation insulating film (5). In other words, a semiconductor device comprises a complete-isolation insulating film which is so formed as to extend from the upper surface of the silicon layer (4) and reach the upper surface of insulating film (3) below the power supply line (21). With this structure, it is possible to obtain the semiconductor device capable of suppressing variation in potential of a body region caused by variation in potential of the power supply line.