Abstract: An optical property measurement apparatus includes: a main body which includes a plane-shape surface that is so disposed as to face the display portion; an optical sensor which receives light directed from an opening that is formed through the plane-shape surface; and a support portion which is disposed on a side of the plane-shape surface and keeps a constant distance between the display portion and the plane-shape surface; wherein a light shield portion that is so disposed as to enclose a circumferential area of the opening of the plane-shape surface and shields entrance of light from a region other than a measurement target region of the display portion when the optical property is measured.

Abstract: A spectral characteristic measuring apparatus includes: an illuminating section for irradiating illumination light onto a sample; a spectral section for separating light from the sample irradiated with the illumination light into light rays in accordance with wavelengths; a light receiving section including a plurality of light receiving elements for receiving the light rays separated by the spectral section in accordance with wavelengths, and converting the received light rays into electrical output signals; and a storing section for storing a combined central wavelength of each of the light receiving elements calculated in advance based a spectral intensity distribution of the illumination light.

Abstract: Each of APRM units equipped for each of the diversity channels has printed circuit boards having circuit patterns thereon and a circuit description elements installed on the printed circuit board. The circuit description elements are FPGA elements manufactured by mutually different providers for example and implemented an electric circuit described in a hardware description language by a configuration tool. The circuit description elements can be implemented mutually different descriptions of the electric circuit, or can be implemented the electric circuit by mutually different configuration tools. Also, the printed circuit boards for the diversity channels can be different from each other.

Abstract: Provided is a MEMS device which is robust to the misalignment and does not require the double-side wafer processing in the manufacture of a MEMS device such as an angular velocity sensor, an acceleration sensor, a combined sensor or a micromirror. After preparing a substrate having a space therein, holes are formed in a device layer at positions where fixed components such as a fixing portion, a terminal portion and a base that are fixed to a supporting substrate are to be formed, and the holes are filled with a fixing material so that the fixing material reaches the supporting substrate, thereby fixing the device layer around the holes to the supporting substrate.

Abstract: A technique in which a false detection and a wrong diagnosis can be suppressed in a capacitance sensor represented by an acceleration sensor is provided. A first capacitative element and a second capacitative element, which configure a capacitance detection unit, and a third capacitative element and a fourth capacitative element, which configure a forced oscillation generation unit, are electrically separated from each other. That is, the diagnosis movable electrode that configures the third capacitative element and the fourth capacitative element is formed integrally with the movable part. On the other hand, the diagnosis fixed electrode and the diagnosis fixed electrode are electrically separated from the detection fixed electrode and the detection fixed electrode.

Abstract: As well as achieving both downsizing and thickness reduction and sensitivity improvement of a semiconductor device that has: a MEMS sensor formed by bulk micromachining technique such as an acceleration sensor and an angular rate sensor; and an LSI circuit, a packaging structure of the semiconductor device having the MEMS sensor and the LSI circuit can be simplified. An integrated circuit having MISFETs and wirings is formed on a silicon layer of an SOI substrate, and the MEMS sensor containing a structure inside is formed by processing a substrate layer of the SOI substrate. In other words, by using both surfaces of the SOI substrate, the integrated circuit and the MEMS sensor are mounted on one SOI substrate. The integrated circuit and the MEMS sensor are electrically connected to each other by a through-electrode provided in the SOI substrate.

Abstract: An inertial sensor capable of making pressure of a space in which an inertial sensor such as an acceleration sensor is placed to be higher than that during a sealing step and improving reliability is provided. The inertial sensor can be achieved by means of making an inertial sensor including a substrate, a movable portion on the substrate, a cap member which seals the movable portion so as to cover the movable portion, wherein a gas-generating material is applied to the movable portion side of the cap.

Abstract: A high-performance angular rate detecting device is provided. A driving part including a drive frame and a Coriolis frame is leviated by at least two fixing beams which share a fixed end and are extending in a direction orthogonal to a driving direction, thereby vibrating the driving part. Even when a substrate is deformed by mounting or heat fluctuation, internal stress generated to the fixed beam and a supporting beam is small, thereby maintaining a vibrating state such as resonance frequency and vibration amplitude constant. Therefore, a high-performance angular rate detecting device which is robust to changes in mounting environment can be obtained.

Abstract: A high-performance angular rate detecting device is provided. A driving part including a drive frame and a Coriolis frame is levitated by at least two fixing beams which share a fixed end and are extending in a direction orthogonal to a driving direction, thereby vibrating the driving part. Even when a substrate is deformed by mounting or heat fluctuation, internal stress generated to the fixed beam and a supporting beam is small, thereby maintaining a vibrating state such as resonance frequency and vibration amplitude constant. Therefore, a high-performance angular rate detecting device which is robust to changes in mounting environment can be obtained.

Abstract: A liquid conveying substrate comprises: rectangular electrodes which are disposed on the substrate surface and whose surfaces are covered with a dielectric with a water repellent surface; first axial electrode columns where the rectangular electrodes are coupled in an x direction; and second axial electrode columns where the rectangular electrodes are coupled in a y direction. Accordingly, electrodes necessary for conveying liquid droplets can be arranged on one substrate, and the number of mechanisms for controlling the potential can be suppressed.

Abstract: An optical property measurement apparatus includes: a main body which includes a plane-shape surface that is so disposed as to face the display portion; an optical sensor which receives light directed from an opening that is formed through the plane-shape surface; and a support portion which is disposed on a side of the plane-shape surface and keeps a constant distance between the display portion and the plane-shape surface; wherein a light shield portion that is so disposed as to enclose a circumferential area of the opening of the plane-shape surface and shields entrance of light from a region other than a measurement target region of the display portion when the optical property is measured.

Abstract: It is an objective to achieve a MEMS switch which can be mounted with a CMOS circuit and has a contact point with high reliability, both mechanically and electrically. An insulator having a compatibility with a CMOS process is formed at the contact surface of a cantilever beam constituting a MEMS switch and a fixed contact 2 opposite thereto. When the switch is used the cantilever beam is moved by applying a voltage to the pull-in electrode and the cantilever beam. After the cantilever beam makes contact with the fixed contact, a voltage exceeding the breakdown field strength of the insulator is applied to the insulator, resulting in dielectric breakdown occurring. By modifying the insulator once, the mechanical fatigue concentration point of the switch contact point is protected, and a contact point is achieved as well in which electrical signals are transmitted through the current path formed by the dielectric breakdown.

Abstract: Each of APRM units equipped for each of the diversity channels has printed circuit boards having circuit patterns thereon and a circuit description elements installed on the printed circuit board. The circuit description elements are FPGA elements manufactured by mutually different providers for example and implemented an electric circuit described in a hardware description language by a configuration tool. The circuit description elements can be implemented mutually different descriptions of the electric circuit, or can be implemented the electric circuit by mutually different configuration tools. Also, the printed circuit boards for the diversity channels can be different from each other.

Abstract: An actuator using a piezoelectric element is stably operated at high speed. The actuator includes driving units provided to face a carrier stage and moving the carrier stage in an X-axis direction, piezoelectric elements provided to the driving units respectively and expanding and contracting in the X-axis direction, a carrier electrode provided on a surface of the carrier stage on a driving-unit side, and driving electrodes provided on surfaces of the driving units on a carrier stage side and electrostatically adsorbing the carrier electrode. Signals not synchronized with each other are applied to the piezoelectric elements.

Abstract: As well as achieving both downsizing and thickness reduction and sensitivity improvement of a semiconductor device that has: a MEMS sensor formed by bulk micromachining technique such as an acceleration sensor and an angular rate sensor; and an LSI circuit, a packaging structure of the semiconductor device having the MEMS sensor and the LSI circuit can be simplified. An integrated circuit having MISFETs and wirings is formed on a silicon layer of an SOI substrate, and the MEMS sensor containing a structure inside is formed by processing a substrate layer of the SOI substrate. In other words, by using both surfaces of the SOI substrate, the integrated circuit and the MEMS sensor are mounted on one SOI substrate. The integrated circuit and the MEMS sensor are electrically connected to each other by a through-electrode provided in the SOI substrate.

Abstract: A high-performance angular rate detecting device is provided. A driving part including a drive frame and a Coriolis frame is levitated by at least two fixing beams which share a fixed end and are extending in a direction orthogonal to a driving direction, thereby vibrating the driving part. Even when a substrate is deformed by mounting or heat fluctuation, internal stress generated to the fixed beam and a supporting beam is small, thereby maintaining a vibrating state such as resonance frequency and vibration amplitude constant. Therefore, a high-performance angular rate detecting device which is robust to changes in mounting environment can be obtained.

Abstract: Provided is a MEMS device which is robust to the misalignment and does not require the double-side wafer processing in the manufacture of a MEMS device such as an angular velocity sensor, an acceleration sensor, a combined sensor or a micromirror. After preparing a substrate having a space therein, holes are formed in a device layer at positions where fixed components such as a fixing portion, a terminal portion and a base that are fixed to a supporting substrate are to be formed, and the holes are filled with a fixing material so that the fixing material reaches the supporting substrate, thereby fixing the device layer around the holes to the supporting substrate.

Abstract: The method for promoting the size reduction, the performance improvement and the reliability improvement of a semiconductor device embedded with pressure sensor is provided. In a semiconductor device embedded with pressure sensor, a part of an uppermost wiring is used as a lower electrode of a pressure detecting unit. A part of a silicon oxide film formed on the lower electrode is a cavity. On a tungsten silicide film formed on the silicon oxide film, a silicon nitride film is formed. The silicon nitride film has a function to fill a hole or holes and suppress immersion of moisture from outside to the semiconductor device embedded with pressure sensor. A laminated film of the silicon nitride film and the tungsten silicide film forms a diaphragm of the pressure sensor.

Abstract: The present invention relates to an LSI in which functions can be changed, and realizes, particularly, a system LSI in which functions are changed by changing connections of the circuit by use of MEMS switches. A bistable MEMS switch which can maintain states, and exhibits optimal stitching property, i.e., the switch has a very small resistance of several ? or less in an on-state, and has an infinite resistance in an off-state; is employed. An element in which functions can be changed during operation, is produced by utilizing a wiring layer of a CMOS semiconductor to form the MEMS switch. A semiconductor device exhibiting high-degree of freedom for changing functions, high-speed, and having small area, is realized.

Abstract: An actuator using a piezoelectric element is stably operated at high speed. The actuator includes driving units provided to face a carrier stage and moving the carrier stage in an X-axis direction, piezoelectric elements provided to the driving units respectively and expanding and contracting in the X-axis direction, a carrier electrode provided on a surface of the carrier stage on a driving-unit side, and driving electrodes provided on surfaces of the driving units on a carrier stage side and electrostatically adsorbing the carrier electrode. Signals not synchronized with each other are applied to the piezoelectric elements.