Abstract: An adhesive film comprising (a) a liquid epoxy resin, (b) a solid resin having one or more functional groups, (c) a microcapsule type curing agent, and if necessary (d) a coupling agent, is effective for connecting semiconductor chips and wiring boards under heat and pressure.

Abstract: An isotropically electroconductive resin film material produced by sticking electroconductive particles to a sticking layer formed on a support and fixing therein, and filling a film-forming resin incompatible with the sticking material among the electroconductive particles, has electroconductivity only in the film thickness direction via the electroconductive particles uniformly dispersed in the plane direction, and is suitable for electrically connecting oppositely placed circuits and fine electrodes of a plurality of electronic parts, and for testing electronic parts.

Abstract: An adhesive film comprising (a) a liquid epoxy resin, (b) a solid resin having one or more functional groups, (c) a microcapsule type curing agent, and if necessary (d) a coupling agent, is effective for connecting semiconductor chips and wiring boards under heat and pressure.

Abstract: A positive temperature coefficient thermistor formed of a principal ingredient comprising barium titanate, lead titanate and calcium titanate, and rare earth elements, being particularly characterized by using calcium titanate as a raw material and having the particle diameter of said calcium titanate among raw material powders made smaller than that of other raw materials. The positive temperature coefficient thermistor formed by the present invention has improved durability in a reducing atmosphere due an increased density of the crystal structure.

Abstract: A method of manufacturing a semiconductor device is disclosed. After an insulating film having an opening is formed on a first thin tungsten film, an impurity is introduced into the substrate through the opening to form a punch-through stopper between a source and a drain. Then, on the first tungsten film inside the opening, a second tungsten film is selectively deposited to form a gate electrode. With this method, it is possible to easily fabricate high-speed MOSFETs whose channel length is less than half a micron.

Abstract: Circuit connections can be repaired with high accuracy and high reliability by peeling a mutually connected circuit portion to be repaired and placing a porous sheet with predetermined shape on the peeled circuit surface, impregnating the porous sheet with a peeling solution, removing the porous sheet containing unnecessary adhesive dissolved by the peeling solution, while cleaning the circuit surface contacted with the peeling solution, and reconnecting the cleaned circuit surface to a circuit surface to be connected via an adhesive.

Abstract: A composition comprising (A) an epoxy resin type adhesive, (B) particles obtained by coating a nucleus of a curing agent with a film, (C) pressure-deformable electroconductive particles having an average particle size larger than that of the particles (B), and if necessary (D) rigid particles having an average particle size smaller than that of the particles (B). Also, a method of using for the composition connecting circuits electrically or connecting a semiconductor chip to a wiring substrate.

Abstract: A composition comprising (A) an epoxy resin type adhesive, (B) particles obtained by coating a nucleus of a curing agent with a film, (C) pressure-deformable electroconductive particles having an average particles size larger than that of the particles (B), and if necessary (D) rigid particles having an average particle size smaller than that of the particles (B), is effective for connecting circuits electrically or connecting a semiconductor chip to a wiring substrate.