Abstract: An image processing apparatus includes a placement unit that is provided on an upper surface of a housing and on which a document is placed, an imaging unit that images the placement unit from above, a light emitting device that causes at least a part of the placement unit to emit light, and a processor configured to: control the light emitting device not to emit light, in a case where it is detected that the document is placed on the placement unit.

Abstract: A mask blank is provided, by which an alignment mark can be formed between a transparent substrate and a laminated structure of a light semitransmissive film, etching stopper film, and light shielding film during manufacture of a transfer mask.

Abstract: A mask blank is provided, by which an alignment mark can be formed between a transparent substrate and a laminated structure of a light semitransmissive film, etching stopper film, and light shielding film during manufacture of a transfer mask.

Abstract: A mask blank is provided, by which an alignment mark can be formed between a transparent substrate and a laminated structure of a light semitransmissive film, etching stopper film, and light shielding film during manufacture of a transfer mask.

Abstract: The organic electroluminescent element has a pair of electrodes and at least two organic functional layers including a light-emitting layer on a substrate. The light-emitting layer contains a host compound and a phosphorescent dopant. The light-emitting layer or the layer adjacent to the light-emitting layer contains quantum dots.

Abstract: A mask blank suitable for fabricating a phase shift mask having a thin film pattern composed of a material enabling dry etching with a fluorine-based gas and a substrate-engraved pattern. The mask blank 100 is used to fabricate a phase shift mask having a thin film pattern and a substrate-engraved pattern. The mask blank 100 has a structure in which an etching stopper film 2, a thin film for pattern formation 3 and an etching mask film 4 are laminated in this order on a transparent substrate 1. The etching stopper film 2 is made of a material that contains chromium and oxygen and the oxygen content thereof is more than 50 at %. The thin film 3 is made of a material that can be dry-etched by a fluorine-based gas. The etching mask film 4 is made of a material that contains chromium, the chromium content thereof is not less than 45 at %, and the oxygen content thereof is not more than 30 at %.

Abstract: Provided are a transparent conductive film having a simple manufacturing process and high transparency, high photoelectric conversion efficiency, and excellent durability and an organic photoelectric conversion element using this transparent conductive film. The transparent conductive film of the present invention is formed by laminating a ground layer which contains a nitrogen-containing organic compound and a metal thin film layer which contains a metal element of Group 11 of the periodic table and has a thickness of from 2 to 10 nm.

Abstract: Disclosed is an electroluminescence element, wherein at least a first electrode, a light-emitting layer, and a second electrode may be laminated on a substrate in said order. In said element, the light-emitting layer may contain quantum dots, and an intermediate layer formed from a polymer containing nitrogen atoms may be formed between the first electrode and the light-emitting layer.

Abstract: Provided is a solar cell including a pair of electrodes, and a photoelectric conversion layer of chalcopyrite structure sandwiched between the pair of electrodes. At least one of the pair of electrodes, adapted to serve as a transparent electrode, has a nitrogen-containing layer composed with the use of an organic compound containing a nitrogen atom, and an electrode layer containing a metal of the Group 11 of the periodic table, which is provided to be laminated on the nitrogen-containing layer, thereby improving the photoelectric conversion efficiency.

Abstract: A tandem-type organic photoelectric conversion element has at least a first electrode, a second electrode, and a plurality of bulk heterojunction layers each comprising a p-type organic semiconductor material and an n-type organic semiconductor material. The tandem-type organic photoelectric conversion element and a solar battery are characterized in that when the absorption wavelengths of the bulk heterojunction layers are such that a second bulk heterojunction layer absorbs up to a longer wavelength than a first bulk heterojunction layer, the LUMO energy level (LUMO(n1)) of the film of the n-type semiconductor in the first bulk heterojunction layer and the LUMO energy level (LUMO(n2)) of the film of the n-type semiconductor in the second bulk heterojunction layer satisfy the following equation (1): 0.4 eV?LUMO(n1)?LUMO(n2)?0.1 eV??(1).

Abstract: Disclosed is an organic photoelectric conversion element which has a reverse layer structure wherein at least a first electrode, a photoelectric conversion layer and a second electrode are arranged on a substrate in this order. The organic photoelectric conversion element is characterized in that: the photoelectric conversion layer is a bulk heterojunction layer that is composed of a p-type organic semiconductor material and an n-type organic semiconductor material; and a compound that has a linear or branched fluorinated alkyl group having 6-20 carbon atoms is contained as the p-type organic semiconductor material.

Abstract: A mask blank suitable for fabricating a phase shift mask having a thin film pattern composed of a material enabling dry etching with a fluorine-based gas and a substrate-engraved pattern. The mask blank 100 is used to fabricate a phase shift mask having a thin film pattern and a substrate-engraved pattern. The mask blank 100 has a structure in which an etching stopper film 2, a thin film for pattern formation 3 and an etching mask film 4 are laminated in this order on a transparent substrate 1. The etching stopper film 2 is made of a material that contains chromium and oxygen and the oxygen content thereof is more than 50 at %. The thin film 3 is made of a material that can be dry-etched by a fluorine-based gas. The etching mask film 4 is made of a material that contains chromium, the chromium content thereof is not less than 45 at %, and the oxygen content thereof is not more than 30 at %.

Abstract: A mask blank suitable for fabricating a phase shift mask having a thin film pattern composed of a material enabling dry etching with a fluorine-based gas and a substrate-engraved pattern. The mask blank 100 is used to fabricate a phase shift mask having a thin film pattern and a substrate-engraved pattern. The mask blank 100 has a structure in which an etching stopper film 2, a thin film for pattern formation 3 and an etching mask film 4 are laminated in this order on a transparent substrate 1. The etching stopper film 2 is made of a material that contains chromium and oxygen and the oxygen content thereof is more than 50 at %. The thin film 3 is made of a material that can be dry-etched by a fluorine-based gas. The etching mask film 4 is made of a material that contains chromium, the chromium content thereof is not less than 45 at %, and the oxygen content thereof is not more than 30 at %.

Abstract: An object of the present invention is to provide an organic electroluminescent element which has a high luminous efficiency and an excellent driving voltage and exhibits excellent stability, and a display device and a lighting device that are equipped with the organic electroluminescent element. The organic electroluminescent element of the present invention is an organic electroluminescent element which includes at least an electron injection layer, an electron transport layer, and a luminous layer between a positive electrode and a negative electrode and in which the electron injection layer contains an electride, the electron transport layer contains an organic compound having a nitrogen atom, at least one of the nitrogen atoms has a lone pair of electrons that does not participate in aromaticity, and the lone pair of electrons does not coordinate a metal.

Abstract: A mask blank is provided, by which an alignment mark can be formed between a transparent substrate and a laminated structure of a light semitransmissive film, etching stopper film, and light shielding film during manufacture of a transfer mask.

Abstract: An organic photoelectric conversion element which sequentially comprises a transparent first electrode, a photoelectric conversion layer that contains a p-type organic semiconductor material and an n-type organic semiconductor material, and a second electrode in this order on a transparent substrate.

Abstract: Disclosed is an electroluminescence element, wherein at least a first electrode, a light-emitting layer, and a second electrode may be laminated on a substrate in said order. In said element, the light-emitting layer may contain quantum dots, and an intermediate layer formed from a polymer containing nitrogen atoms may be formed between the first electrode and the light-emitting layer.

Abstract: Provided is a solar cell including a pair of electrodes, and a photoelectric conversion layer of chalcopyrite structure sandwiched between the pair of electrodes. At least one of the pair of electrodes, adapted to serve as a transparent electrode, has a nitrogen-containing layer composed with the use of an organic compound containing a nitrogen atom, and an electrode layer containing a metal of the Group 11 of the periodic table, which is provided to be laminated on the nitrogen-containing layer, thereby improving the photoelectric conversion efficiency.

Abstract: A mask blank suitable for fabricating a phase shift mask having a thin film pattern composed of a material enabling dry etching with a fluorine-based gas and a substrate-engraved pattern. The mask blank 100 is used to fabricate a phase shift mask having a thin film pattern and a substrate-engraved pattern. The mask blank 100 has a structure in which an etching stopper film 2, a thin film for pattern formation 3 and an etching mask film 4 are laminated in this order on a transparent substrate 1. The etching stopper film 2 is made of a material that contains chromium and oxygen and the oxygen content thereof is more than 50 at %. The thin film 3 is made of a material that can be dry-etched by a fluorine-based gas. The etching mask film 4 is made of a material that contains chromium, the chromium content thereof is not less than 45 at %, and the oxygen content thereof is not more than 30 at %.

Abstract: A mask blank and transfer mask that overcomes problems caused by an electromagnetic field (EMF) effect when a DRAM half pitch (hp) is 32 nm or less specified in semiconductor device design specifications. The mask blank is used in manufacturing a transfer mask to which ArF exposure light is applied, and includes a light shielding film 10 having a multilayer structure. The multilayer structure includes a light shielding layer 11 and a surface anti-reflection layer 12 formed on a transparent substrate 1. An auxiliary light shielding film 20 is formed on the light shielding film 10. The light shielding film 10 has a thickness of 40 nm or less and an optical density of 2.0 or more to 2.7 or less for exposure light. The optical density is 2.8 or more for exposure light in the multilayer structure of the light shielding film 10 and the auxiliary light shielding film 20.