Abstract: Provided are a transparent conductive film having a simple manufacturing process and high transparency, high photoelectric conversion efficiency, and excellent durability and an organic photoelectric conversion element using this transparent conductive film. The transparent conductive film of the present invention is formed by laminating a ground layer which contains a nitrogen-containing organic compound and a metal thin film layer which contains a metal element of Group 11 of the periodic table and has a thickness of from 2 to 10 nm.

Abstract: The organic electroluminescent element has a pair of electrodes and at least two organic functional layers including a light-emitting layer on a substrate. The light-emitting layer contains a host compound and a phosphorescent dopant. The light-emitting layer or the layer adjacent to the light-emitting layer contains quantum dots.

Abstract: Provided is a lightweight flexible lighting device with excellent durability and stable performance over repeated use that combines an organic electroluminescent element, an organic photoelectric conversion element, and a secondary cell. The lighting device has a control means for controlling the electrical connections of the organic electroluminescent element, the organic photoelectric conversion element, and the secondary cell. The control means controls the electrical connections such that a reverse bias voltage is applied to the organic electroluminescent element when the organic electroluminescent element receives light, generates power, and charges the secondary cell, and such that a reverse bias voltage is applied to the organic photoelectric conversion element when the organic electroluminescent element is supplied with power from the secondary cell and emits light.

Abstract: Disclosed is an organic photoelectric conversion element which has excellent photoelectric conversion efficiency and excellent temperature stability with respect to power generation. The organic photoelectric conversion element comprises at least one photoelectric conversion layer and at least one carrier transport layer between a first electrode and a second electrode, and is characterized in that the carrier transport layer contains the salt of an alkali metal or an alkaline earth metal or the complex thereof of an alkali metal or an alkaline earth metal.

Abstract: The present invention has an object to provide an organic photoelectric conversion element exhibiting excellent durability. The present invention is to provide an organic photoelectric conversion element comprising a conjugated polymer compound having a partial structure represented by the following Chemical Formula 1. wherein X independently represents O, S, NR2, or CR3?CR4; W independently represents CH or N; L independently represents a linear or branched alkylene group having 1 to 10 carbon atoms; Y1 and Y2 independently represent O or NR5; Z independently represents C, S, or P; R1 to R5 independently represent H, a linear or branched alkyl group having 1 to 24 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, an aryl group having 6 to 30 carbon atoms, or a heteroaryl group having 1 to 20 carbon atoms; and a, b, and c independently represent an integer satisfying the relation: 3?a+b+c?4 and 0?a, b, c?2.

Abstract: An organic photoelectric conversion element which sequentially comprises a transparent first electrode, a photoelectric conversion layer that contains a p-type organic semiconductor material and an n-type organic semiconductor material, and a second electrode in this order on a transparent substrate.

Abstract: Disclosed is an organic photoelectric conversion element having high photoelectric conversion efficiency and high durability. Also disclosed are a solar cell and an optical sensor array, each using the organic photoelectric conversion element. The organic photoelectric conversion element comprises a bulk heterojunction layer wherein an n-type semiconductor material and a p-type semiconductor material are mixed. The organic photoelectric conversion element is characterized in that the n-type semiconductor material is a polymer compound and the p-type semiconductor material is a low-molecular-weight compound.

Abstract: A photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern. The photomask blank provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film. The photomask blank includes a translucent substrate having thereon a shielding film composed mainly of chromium and the shielding film contains hydrogen. The shielding film is formed in such a manner that the film formation rate of the layer at the surface side is lower than the film formation rate of the layer at the translucent substrate side of the shielding film. The dry etching rate of the shielding film is lower at the translucent substrate side than at the surface side.

Abstract: A thin film composed of a material containing a metal and silicon is formed on a transparent substrate, and a thin film pattern is formed by patterning the thin film. Then, the main surface and the side walls of the thin film pattern are previously modified so as to prevent the transfer characteristics of the thin film pattern from changing more than predetermined even in the case where exposure light with a wavelength of 200 nm or less is cumulatively applied onto the thin film pattern which has been formed. The main surface and the side walls are modified by, for instance, performing heat treatment to the main surface and the side walls at 450-900° C. in the atmosphere containing oxygen.

Abstract: Provided is an organic photoelectric conversion element containing: a first electrode; a second electrode; and an organic photoelectric conversion layer sandwiched between the first electrode and the second electrode, wherein the first electrode comprises: a conductive fiber layer; and a transparent conductive layer containing a conductive polymer comprising a ? conjugated conductive polymer and a polyanion, and an aqueous binder, and at least a part of the transparent conductive layer containing the conductive polymer and the aqueous binder is cross-linked therein.

Abstract: Provided is an organic photoelectric conversion element having a high photoelectric conversion ratio. Provided is also a method for manufacturing an organic photoelectric conversion element which can significantly reduce the manufacturing cost by forming a transparent electrode and an organic generation layer portion by coating a material. The organic photoelectric conversion element includes on a transparent substrate, a first electrode unit having a transparent conductive layer, an organic generation unit, and a second electrode unit which are successively arranged in this order when viewed from the transparent substrate. The transparent conductive layer constituting the first electrode unit contains conductive fiber and transparent conductive material.

Abstract: Disclosed is an organic photoelectric conversion element which has a reverse layer structure wherein at least a first electrode, a photoelectric conversion layer and a second electrode are arranged on a substrate in this order. The organic photoelectric conversion element is characterized in that: the photoelectric conversion layer is a bulk heterojunction layer that is composed of a p-type organic semiconductor material and an n-type organic semiconductor material; and a compound that has a linear or branched fluorinated alkyl group having 6-20 carbon atoms is contained as the p-type organic semiconductor material.

Abstract: A mask blank is formed on a transparent substrate with a light-shielding film of a material mainly containing chromium and is used for obtaining a photomask by forming the light-shielding film into a transfer pattern by lithography using an electron beam writing resist. The mask blank includes a mask layer formed on the light-shielding film for serving as an etching mask in etching that forms the light-shielding film into the transfer pattern. The mask layer is made of a material containing silicon. The mask blank further includes a chromium nitride-based film formed on the mask layer and containing at least chromium and nitrogen.

Abstract: Disclosed is an organic photoelectric conversion element which has excellent photoelectric conversion efficiency and excellent temperature stability with respect to power generation. The organic photoelectric conversion element comprises at least one photoelectric conversion layer and at least one carrier transport layer between a first electrode and a second electrode, and is characterized in that the carrier transport layer contains the salt of an alkali metal or an alkaline earth metal or the complex thereof of an alkali metal or an alkaline earth metal.

Abstract: A method of manufacturing a mask blank includes a thin film forming step of forming a thin film, which becomes a mask pattern, on a mask blank substrate and a resist film forming step of forming a resist film on the thin film. The method further includes a step of storing resist film forming information including information about a date of formation of the resist film on the thin film, a step of correlating the resist film forming information with the mask blank, a step of identifying, based on the resist film forming information, the mask blank having the resist film whose sensitivity change exceeds an allowable range, a step of stripping the resist film formed in the identified mask blank, and a step of forming again a resist film on the thin film stripped of the resist film.

Abstract: A tandem-type organic photoelectric conversion element has at least a first electrode, a second electrode, and a plurality of bulk heterojunction layers each comprising a p-type organic semiconductor material and an n-type organic semiconductor material. The tandem-type organic photoelectric conversion element and a solar battery are characterized in that when the absorption wavelengths of the bulk heterojunction layers are such that a second bulk heterojunction layer absorbs up to a longer wavelength than a first bulk heterojunction layer, the LUMO energy level (LUMO(n1)) of the film of the n-type semiconductor in the first bulk heterojunction layer and the LUMO energy level (LUMO(n2)) of the film of the n-type semiconductor in the second bulk heterojunction layer satisfy the following equation (1): 0.4 eV?LUMO(n1)?LUMO(n2)?0.1 eV . . .

Abstract: A photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern. The photomask blank provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film. The photomask blank includes a translucent substrate having thereon a shielding film composed mainly of chromium and the shielding film contains hydrogen. The shielding film is formed in such a manner that the film formation rate of the layer at the surface side is lower than the film formation rate of the layer at the translucent substrate side of the shielding film. The dry etching rate of the shielding film is lower at the translucent substrate side than at the surface side.

Abstract: A mask blank and transfer mask that overcomes problems caused by an electromagnetic field (EMF) effect when the DRAM half pitch (hp) specified in semiconductor device design specifications is 32 nm or less. The mask blank is used in manufacturing a transfer mask to which ArF exposure light is applied, and includes a light shielding film 10 having a multilayer structure. The multilayer structure includes a light shielding layer 11 and a surface anti-reflection layer 12 formed on a transparent substrate 1. An auxiliary light shielding film 20 is formed on the light shielding film 10. The light shielding film 10 has a thickness of 40 nm or less and an optical density of 2.0 or more to 2.7 or less for exposure light. The optical density for exposure light in the multilayer structure of the light shielding film 10 and the auxiliary light shielding film 20 is 2.8 or more.

Abstract: There are provided a photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern, a photomask blank which provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and a photomask blank which is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film. The photomask blank of the present invention includes a translucent substrate having thereon a shielding film composed mainly of chromium and the shielding film contains hydrogen. The shielding film is formed in such a manner that the film formation rate of the layer at the surface side is lower than the film formation rate of the layer at the translucent substrate side of the shielding film. The dry etching rate of the shielding film is lower at the translucent substrate side than at the surface side.

Abstract: A thin film composed of a material containing a metal and silicon is formed on a transparent substrate, and a thin film pattern is formed by patterning the thin film. Then, the main surface and the side walls of the thin film pattern are previously modified so as to prevent the transfer characteristics of the thin film pattern from changing more than predetermined even in the case where exposure light with a wavelength of 200 nm or less is cumulatively applied onto the thin film pattern which has been formed. The main surface and the side walls are modified by, for instance, performing heat treatment to the main surface and the side walls at 450-900° C. in the atmosphere containing oxygen.