Abstract: In a photomask blank serving as a base member for producing a halftone-type phase shift mask in which a light-transmissive substrate is formed thereon with a light-semitransmissive phase shift pattern having a desired opening, a light-semitransmissive phase shift film, a chromium film, and an etching mask film are stacked in order on the light-transmissive substrate. The etching mask film is made of an inorganic-based material having a resistance against dry etching of the chromium film. The photomask blank further may has a resist film formed on the etching mask film.

Abstract: A mask blank glass substrate is for use in manufacturing a mask blank. In the mask blank glass substrate, a marker expressing, by a plurality of pits, information for identifying or managing the mask blank glass substrate is formed on a surface of a region, having no influence on formation of a transfer pattern, of the mask blank glass substrate. Each of the pits forming the marker is a round hole with its edge portion being generally circular and a distance L1 between the edge portions of the adjacent pits is 50 ?m or more. The marker is formed, for example, on an end face of the mask blank glass substrate.

Abstract: Disclosed is a phase shift mask blank (11) that can prevent the occurrence of a loading effect. The phase shift mask blank (11) includes a phase shift film (5) containing silicon, a light-shielding film (2) made of a material resistant to etching of the phase shift film (5), and an etching mask film (3) made of an inorganic material resistant to etching of the light-shielding film (2), which are formed in this order on a substrate (1) transparent to exposure light. Assuming that the thickness of the phase shift film (5) is t1, the etching rate of the phase shift film (5) by dry etching with an etchant using the etching mask film (3) and the light-shielding film (2) as a mask is v1, the thickness of the etching mask film (3) is t2, and the etching rate of the etching mask film (3) by dry etching with the above etchant is v2, (t1/v1)?(t2/v2) is satisfied.

Abstract: Provided is a lightweight flexible lighting device with excellent durability and stable performance over repeated use that combines an organic electroluminescent element, an organic photoelectric conversion element, and a secondary cell. The lighting device has a control means for controlling the electrical connections of the organic electroluminescent element, the organic photoelectric conversion element, and the secondary cell. The control means controls the electrical connections such that a reverse bias voltage is applied to the organic electroluminescent element when the organic electroluminescent element receives light, generates power, and charges the secondary cell, and such that a reverse bias voltage is applied to the organic photoelectric conversion element when the organic electroluminescent element is supplied with power from the secondary cell and emits light.

Abstract: A photomask manufacturing method includes a defect information storage step of storing defect information of a mask blank, provided with an identification marker on an end face thereof, into an information storage device in correspondence to the identification marker, a placing orientation determination step of determining a placing orientation of the mask blank with respect to an exposure/writing apparatus, and an orientation correction step of performing rotation control of a rotating apparatus so that an orientation of the mask blank coincides with the determined placing orientation.

Abstract: Provided is an organic photoelectric conversion element having a high photoelectric conversion ratio. Provided is also a method for manufacturing an organic photoelectric conversion element which can significantly reduce the manufacturing cost by forming a transparent electrode and an organic generation layer portion by coating a material. The organic photoelectric conversion element includes on a transparent substrate, a first electrode unit having a transparent conductive layer, an organic generation unit, and a second electrode unit which are successively arranged in this order when viewed from the transparent substrate. The transparent conductive layer constituting the first electrode unit contains conductive fiber and transparent conductive material.

Abstract: Provided is an organic photoelectric conversion element containing: a first electrode; a second electrode; and an organic photoelectric conversion layer sandwiched between the first electrode and the second electrode, wherein the first electrode comprises: a conductive fiber layer; and a transparent conductive layer containing a conductive polymer comprising a ? conjugated conductive polymer and a polyanion, and an aqueous binder, and at least a part of the transparent conductive layer containing the conductive polymer and the aqueous binder is cross-linked therein.

Abstract: A method of manufacturing a mask blank glass substrate or mask blank that includes a mark forming step, and a mask blank glass substrate or mask blank that includes a mark. The mark is a pit formed by irradiating laser light onto a mirror-like surface in an area, having no influence on transfer, on a surface of the mask blank glass substrate. The pit is used as a marker for individually identifying or managing the mask blank glass substrate. The marker may be correlated with information including at least one of substrate information about the mask blank glass substrate, thin film information about the mask pattern thin film, and resist film information about the resist film. A mask blank glass substrate with marker correlated to at least one of the resist film information and thin film information may be used to manufacture a new mask blank.

Abstract: A method of manufacturing a mask blank glass substrate or mask blank that includes a mark forming step, and a mask blank glass substrate or mask blank that includes a mark. The mark is a pit formed by irradiating laser light onto a mirror-like surface in an area, having no influence on transfer, on a surface of the mask blank glass substrate. The pit is used as a marker for individually identifying or managing the mask blank glass substrate. The marker may be correlated with information including at least one of substrate information about the mask blank glass substrate, thin film information about the mask pattern thin film, and resist film information about the resist film. A mask blank glass substrate with marker correlated to at least one of the resist film information and thin film information may be used to manufacture a new mask blank.

Abstract: It is provided a photomask blank that has good flatness when a light-shielding film is patterned and hence can provide a good mask pattern accuracy and a good pattern transfer accuracy, and a method of producing a photomask. A photomask blank of the present invention includes a light-shielding film containing at least chromium on a light-transmitting substrate. The light-shielding film is formed so as to cause a desired film stress in the direction opposite to that of a change in the film stress that is anticipated to be caused in the light-shielding film by heat treatment according to a resist film formed on the light-shielding film. A photomask is produced by patterning the light-shielding film of the photomask blank by dry etching.

Abstract: Disclosed is an organic photoelectric conversion element having high photoelectric conversion efficiency and high durability. Also disclosed are a solar cell and an optical sensor array, each using the organic photoelectric conversion element The organic photoelectric conversion element comprises a bulk heterojunction layer wherein an n-type semiconductor material and a p-type semiconductor material are mixed. The organic photoelectric conversion element is characterized in that the n-type semiconductor material is a polymer compound and the p-type semiconductor material is a low-molecular-weight compound.

Abstract: An electroluminescent element is disclosed, comprising an electroluminescent material and a fluorescent substance emitting light having an emission maximum at the wavelength different from that of light emitted from the electroluminescent material upon absorption of the light emitted from the electroluminescent material. A color conversion filter is also disclosed, comprising a fluorescent substance emitting light having an emission maximum at the wavelengths of 400 to 700 nm upon absorption of the light emitted from the electroluminescent material.

Abstract: A method of manufacturing a mask blank glass substrate or mask blank that includes a mark forming step, and a mask blank glass substrate or mask blank that includes a mark. The mark is a pit formed by irradiating laser light onto a mirror-like surface in an area, having no influence on transfer, on a surface of the mask blank glass substrate. The pit is used as a marker for individually identifying or managing the mask blank glass substrate. The marker may be correlated with information including at least one of substrate information about the mask blank glass substrate, thin film information about the mask pattern thin film, and resist film information about the resist film. A mask blank glass substrate with marker correlated to at least one of the resist film information and thin film information may be used to manufacture a new mask blank.

Abstract: A transparent film for display substrate containing a cellulose ester, a plasticizer content in an amount of less than 1 percent, the aforementioned film being drawn 3 through 100 percent both in the direction of conveyance and across the width.

Abstract: In a method of manufacturing a mask blank adapted to be formed with a resist pattern by electron beam writing and having a light-shielding film and an etching mask film of an inorganic-based material resistant to etching of the light-shielding film which are formed in this order on a transparent substrate, when forming the etching mask film, shielding is performed using a shielding plate so as to prevent the etching mask film from being formed at least at a side surface of the substrate.

Abstract: An object of this invention is to properly identify or manage mask blank substrates, mask blanks, and so on. A manufacturing method of a mask blank substrate (10) includes a substrate preparing step of preparing a plate-like substrate with a square main surface (102), and a marker forming step of forming a marker (106a to 106d) for identifying or managing the substrate on each of at least a plurality of end faces among four end faces (104a to 104d) of the substrate. The four end faces are continuous with sides of the main surface, respectively.

Abstract: In a photomask blank serving as a base member for producing a halftone-type phase shift mask in which a light-transmissive substrate is formed thereon with a light-semitransmissive phase shift pattern having a desired opening, a light-semitransmissive phase shift film, a chromium film, and an etching mask film are stacked in order on the light-transmissive substrate. The etching mask film is made of an inorganic-based material having a resistance against dry etching of the chromium film. The photomask blank further may has a resist film formed on the etching mask film.

Abstract: In the photomask blank 100, which is an original plate of a transfer mask having a transfer pattern to be transferred to the body to be subjected to transfer on the substrate 10, the photomask blank 100 includes a light shielding film 20 becoming the transfer pattern and a resist film 30 on the substrate 10, and the resist film 30 formed on the peripheral edge of the main surface of the substrate 10 is removed in a predetermined region in a supported region 31 of the photomask blank 100 supported by the substrate holding member of the exposure device, so that a desired pattern positional accuracy and a desired focus accuracy are obtained, when the transfer mask having the transfer pattern obtained by patterning the light shielding film 20 is supported by the substrate holding member of the exposure device.

Abstract: In a photomask blank serving as a base member for producing a halftone-type phase shift mask in which a light-transmissive substrate is formed thereon with a light-semitransmissive phase shift pattern having a desired opening, a light-semitransmissive phase shift film, a chromium film, and an etching mask film are stacked in order on the light-transmissive substrate. The etching mask film is made of an inorganic-based material having a resistance against dry etching of the chromium film. The photomask blank further may has a resist film formed on the etching mask film.

Abstract: In a method of manufacturing a mask blank adapted to be formed with a resist pattern by electron beam writing and having a light-shielding film and an etching mask film of an inorganic-based material resistant to etching of the light-shielding film which are formed in this order on a transparent substrate, when forming the etching mask film, shielding is performed using a shielding plate so as to prevent the etching mask film from being formed at least at a side surface of the substrate.