Abstract: An objective of the present invention is to provide a ceramic heater making it possible to heat an object to be heated, such as a silicon wafer, evenly. The ceramic heater of the present invention is a ceramic heater having and a resistance heating element formed on the surface of the ceramic substrate or inside the ceramic substrate, wherein: said ceramic heater is equipped with: a temperature-measuring means measuring the temperature of said ceramic substrate and an object to be heated; a control unit supplying electric power to said heating element; a memory unit memorizing the temperature data measured by said temperature-measuring means; and an operation unit calculating electric power required for said heating element from said temperature, said ceramic heater being constituted such that said heating element is divided into at least 2 or more circuits and different electric power is supplied to each of the circuits of said resistance heating element.

Abstract: An object of the present invention is to provide a ceramic substrate that is superior in temperature rising/dropping characteristics and breakdown voltage at a high temperature, has a small warp amount, and is best as a substrate for semiconductor-producing/examining devices. The ceramic substrate of the present invention is a ceramic substrate having a conductor formed on the surface thereof or inside thereof, characterized in that said ceramic substrate is having 15×1011 or less pores which have a diameter of 0.5 ?m or more per m2.

Abstract: The object of the present invention is to provide an aluminum nitride sintered body which has excellent mechanical strength and in which ceramic particles is prevented from coming off from the surface and/or side thereof and generation of free particles is suppressed. The aluminum nitride sintered body of the present invention is wherein it contains sulfur.

Abstract: A ceramic heater manufacturing method capable of preventing reflection of a laser beam at the time the performing trimming by irradiation using a laser beam and performing trimming of a resistance heating element or a conductor layer. The ceramic heater manufacturing method includes forming a resistance heating element having a pattern on a surface of a ceramic substrate; and irradiating a laser beam onto the resistance heating element to form a gutter or a cut after a preceding step to adjust a resistance value of the resistance element. When the resistance heating element is formed on the surface of the ceramic substrate, the resistance heating element is adjusted to have a surface roughness Ra of 0.01 ?m or more in accordance with MS B 0601.

Abstract: A ceramic joint body including a ceramic substrate and a ceramic body such as a cylindrical body firmly bonded to each other and excellent in corrosion resistance in the ceramic substrate for use for a semiconductor product producing/examining the step. The ceramic bonded body includes a ceramic substrate in which a conductor is provided, and a ceramic body bonded to a bottom face of the ceramic substrate. The ceramic bonded body has a region, where no conductor is formed, in at least a part of a region above a bonding interface between the ceramic substrate and the ceramic body.

Abstract: The present invention provides a ceramic substrate for use in an apparatus for manufacturing and inspecting semiconductors. The ceramic substrate comprises a through-hole having excellent tolerance performance against a drawing stress applied to an external terminal pin. The through-hole is provided with a projection which protrudes into the ceramic substrate made of aluminum nitride as primary component.

Abstract: An aluminum nitride ceramic including a sintered body having an aluminum nitride matrix, a carbon contained in the aluminum nitride matrix, and a sintering aid. The carbon is undetectable on an X-ray diffraction chart or below a detection limit of the X-ray diffraction chart.

Abstract: A ceramic heater capable of reducing temperature uniformity at the periphery of through holes such as insertion holes and vacuum suction holes is provided, which protects wafer against thermal shocks and has improved controllability for temperature control parts such as thermocouples and temperature fuse. Further, a ceramic heater capable of uniform resin curing is provided. A heat generation body is disposed on the surface or inside of a ceramic substrate. Further, corners for the insertion holes, the recesses and the vacuum suction holes of the ceramic substrate are chamfered.

Abstract: A temperature controller and temperature control element, whose plate-surface temperature distribution is highly homogeneous, which can be used in a waveguide type optical module. In a waveguide type optical module a temperature control element is supported on a pedestal inside a casing and an optical waveguide is mounted on the temperature control element. The temperature control element includes a plate having a heater or heat absorber provided on the non-heating side thereof or buried therein. The pedestal is provided to support the plate mainly in contact with the non-heating side of the plate. A total area of contact of the pedestal with the plate including an area of contact with the heater or heat absorber is set to over 30% of the area of the non-heating side of the plate and a sum of surface roughness of the pedestal and those of both the plate and heater is set to over 0.05 ?m.

Abstract: A gas injection head which is configured to jet a reactive gas includes a head surface. The gas injection head includes a nitride ceramic containing a rare earth compound which is present on the head surface.

Abstract: An objective of the present invention is to provide an aluminum nitride sintered body making it possible to keep a volume resistivity of 108 ?•cm or more, and guarantee covering-up capability, a large radiant heat amount and measurement accuracy with a thermoviewer. A carbon-containing aluminum nitride sintered body of the present invention of the present invention comprising: carbon whose peak cannot be detected on its X-ray diffraction chart or whose peak is below its detection limit thereon: in a matrix made of aluminum nitride.

Abstract: A ceramic beater for a semiconductor producing/examining device having a resistance heating element superior in adhesion to a substrate. The ceramic heater includes a ceramic substrate and a resistance heating element formed on the surface of the ceramic substrate. Further, irregularities are formed on the side face of the resistance heating element.

Abstract: The present invention provides a ceramic substrate which can keep a sufficiently large breakdown voltage even if the pore diameter of its maximum pore is 50 ?m or less to be larger than that of conventional ceramic substrates, can give a large fracture toughness value because of the presence of pores, can resist thermal impact, and can give a small warp amount at high temperature. The ceramic substrate of the present invention is a ceramic substrate for a semiconductor-producing/examining device having a conductor formed on a surface of the ceramic substrate or inside the ceramic substrate, wherein: the substrate is made of a non-oxide ceramic containing oxygen; and the pore diameter of the maximum pore thereof is 50 ?m or less.

Abstract: A ceramic heater for a semiconductor producing/examining device including a ceramic substrate having a heating surface for receiving a semiconductor wafer, a heating device for generating heat sufficient for producing/examining the semiconductor wafer and formed on the heating surface or inside the ceramic substrate, and a temperature measuring device for measuring a temperature of the heating surface and pressed against the ceramic substrate.

Abstract: A ceramic substrate for a semiconductor producing/examining device which has high fracture toughness value, excellent thermal shock resistivity, high thermal conductivity and an excellent temperature rising and falling properties, can be used as a hot plate, an electrostatic chuck, a wafer prober and the like. A ceramic substrate, for a semiconductor producing/examining device, having a conductor formed inside or on the surface thereof has been sintered such that a fractured section thereof exhibits intergranular fracture.

Abstract: A ceramic heater improving a uniformity of temperature distribution in a work heating face, wherein a resistance heating body formed on a face of a ceramic substrate opposite to the work heating face thereof is such that the scattering of thickness is within ±50% of an average thickness, and a surface roughness of the resistance heating body is a range of 0.05-100 ?m as Rmax and not more than 50% of the average thickness.

Abstract: A ceramic heater for a semiconductor producing/examining device including a ceramic substrate having a disc form with a diameter exceeding 200 mm and first and second surfaces, the first surface being a wafer-holding face and the second surface opposing to the first surface, the wafer-holding face being such that a semiconductor wafer is directly put on the wafer-holding face or held apart from the wafer-holding face by a supporting pin. The wafer-holding face has a surface roughness Rmax of 0.1 to 250 ?m according to JIS R 0601, and a difference between the surface roughness of the wafer-holding face and surface roughness of the second surface is 50% or less.

Abstract: A waveguide type optical module is provided which includes a temperature control element supported on pedestals inside a casing, and an optical waveguide provided on the temperature control element. The heating control element includes a plate having a heater or heat absorber provided on a non-heating side thereof or buried therein. The plate is supported on the pedestals with less than 30% of the area thereof being in contact with the plate. Because of such a structure, the waveguide type optical module has a good wavelength demultiplexing characteristic, and the temperature controller and control element for use in the optical module incur less occurrence of particle separation and shows a high homogeneity of plate-surface temperature distribution.

Abstract: An object of the present invention is to provide a ceramic heater for a semiconductor producing/examining device which is capable of accurately measuring the temperature of an object to be heated and evenly heating the whole body of a silicon wafer by adjusting the heating state of a heating element based on the temperature measurement result, and the ceramic heater for a semiconductor producing/examining device of the present invention is a ceramic heater including a ceramic substrate and a heating element formed on the surface or the inside of the ceramic substrate, wherein a temperature measurement element is formed while being brought into contact with the ceramic substrate and the surface roughness of the ceramic substrate brought into contact with the temperature measurement element is Ra?5 ?m.

Abstract: It is a an object of the present invention to provide a ceramic substrate for a semiconductor producing/examining device which has high fracture toughness value, exellent thermal shock resistivity, high thermal conductivity and an excellent temperature rising and falling properties, and is preferable as a hot plate, an electrostatic chuck, a wafer prober and the like. A ceramic substrate, for a semiconductor producing/examining device, having a conductor formed inside thereof or on the surface thereof of the present invention is the ceramic substrate, wherein said ceramic substrate has been sintered such that a fractured section thereof exhibits intergranular fracture.