Abstract: An object of the present invention is to provide a ceramic substrate for a semiconductor producing/examining device, capable of controlling the temperature of a resistance heating element, thereby suitably controlling the temperature of a semiconductor wafer placed on a ceramic substrate or the like and evenly heating the semiconductor wafer. The ceramic substrate for a semiconductor producing/examining device according to the present invention comprises at least a resistance heating element formed on a surface thereof or inside thereof, wherein a region: where a semiconductor wafer is directly placed; or where a semiconductor wafer is placed apart from the surface thereof while keeping a given distance, exists inside a surface region corresponding to the region where said resistance heating element is formed.

Abstract: A ceramic board which, when used as a heater, heats a silicon wafer uniformly throughout and, hence, does not damage the wafer and, when used as an electrostatic chuck, provides a sufficient chucking force. The ceramic board for semiconductor manufacture apparatuses comprising a ceramic substrate and a semiconductor wafer mounted thereon directly or supported indirectly at a fixed distance from its surface, wherein the surface of said ceramic substrate, where said semiconductor wafer is to be mounted or supported, is controlled to a flatness of 1 to 50 &mgr;m over a measurement range of [(diametric end-to-end length) −10 mm].

Abstract: The present invention aims to provide a ceramic heater manufacturing method capable of preventing reflection of laser beam at the time of performing trimming by irradiation using a laser beam and performing trimming of a resistance heating element or a conductor layer as designed and the ceramic heater manufacturing method of the present invention comprising the steps of: forming a resistance heating element having a pattern on a surface of a ceramic substrate; and irradiating laser beam onto the resistance heating element to form a gutter or a cut after preceding step so as to adjust a resistance value of the resistance heating element, wherein when the resistance heating element is formed on the surface of the ceramic substrate, the resistance heating element is adjusted so as to have a surface roughness Ra of 0.01 &mgr;m or more in accordance with JIS B 0601.

Abstract: An object of the present invention is to provide a heater wherein even if a through hole into which lifter pins and the like for supporting a semiconductor wafer will be inserted is made, the temperature in the vicinity of the through hole is not lowered so that the temperature in its heating face is even. The present invention is a ceramic heater comprising a ceramic substrate; and a resistance heating element formed on the surface of the ceramic substrate or inside above-mentioned ceramic substrate, above-mentioned ceramic substrate being equipped with a through hole, wherein the wall face of above-mentioned through hole has a surface roughness of Rmax=0.05 to 200 &mgr;m based on JIS B 0601.

Abstract: This invention has its object to provide a ceramic board which, when used as a heater, heats a silicon wafer uniformly throughout and, hence, does not damage the wafer and, when used as an electrostatic chuck, provides a sufficient chucking force.

Abstract: An object of the present invention is to provide a ceramic heater making it possible to suppress an outflow of heat to a supporting case and so on to make the temperature of its ceramic substrate uniform. The ceramic heater of the present invention is a ceramic heater wherein a heating element is arranged on a surface of a ceramic substrate or inside the ceramic substrate, the surface roughness Rmax of the side face of the ceramic substrate being from 0.1 to 200 &mgr;m according to JIS B 0601.

Abstract: An object of the present invention is to provide a ceramic heater making it possible to suppress an outflow of heat to a supporting case and so on to make the temperature of its ceramic substrate uniform. The ceramic heater of the present invention is a ceramic heater wherein a heating element is arranged on a surface of a ceramic substrate or inside the ceramic substrate, the surface roughness Rmax of the side face of the ceramic substrate being from 0.1 to 200 &mgr;m according to JIS B 0601.

Abstract: An object of the present invention is to provide a ceramic heater for a semiconductor producing/examining device in which the temperature of the whole of its wafer heating face becomes even and by which a semiconductor wafer and the like can be evenly heated. The ceramic heater for a semiconductor producing/examining device according to the present invention comprises a resistance heating element formed on a surface of a ceramic substrate or inside the ceramic substrate, wherein the dispersion of the resistance value of the resistance heating element to the average resistance value thereof is 25% or less.

Abstract: A hot plate unit for heating semiconductor wafers. The hot plate unit includes a case, a hot plate, a seal element, and a holding ring. The seal element is made of a heat insulative material and is arranged between the case and the hot plate. The hot plate is clamped between the holding ring and the seal element. Screws for fastening the holding ring do not contact the hot plate.

Abstract: An object of the present invention is to provide a ceramic heater for a semiconductor-producing/examining device which has a short temperature dropping time and can be rapidly cooled. The present invention is a ceramic heater for a semiconductor-producing/examining device comprising a resistance heating element on a surface thereof, wherein the resistance heating element has a surface roughness Ra according to JIS B 0601 of 0.01 &mgr;m or more.

Abstract: An object of the present invention is to provide a ceramic heater for a semiconductor producing/examining device which is capable of accurately measuring the temperature of an object to be heated and evenly heating the whole body of a silicon wafer by adjusting the heating state of a heating element based on the temperature measurement result, and the ceramic heater for a semiconductor producing/examining device of the present invention is a ceramic heater including a ceramic substrate and a heating element formed on the surface or the inside of the ceramic substrate, wherein a temperature measurement element is formed while being brought into contact with the ceramic substrate and the surface roughness of the ceramic substrate brought into contact with the temperature measurement element is Ra≦5 &mgr;m.

Abstract: An object of the present invention is to provide a wafer prober capable of protecting a chuck top conductor layer against noises, preventing integrated circuits and the like from erroneously operating due to the noises, and precisely determining whether or not the integrated circuits and the like normally operate. The present invention provides a wafer prober comprising: a ceramic substrate and a chuck top conductor layer formed on a main face of said ceramic substrate; and a guard electrode formed inside of said ceramic substrate, wherein a metal layer is formed on a side face of said ceramic substrate.

Abstract: A hot plate unit that cools within a short period of time without a complicated or enlarged structure. The hot plate unit (1) includes a hot plate (3), which is arranged in an opened portion (4) of a casing (2A) and has a resistor (10). The casing (2A) and the hot plate (3) form a space to enable the circulation of air. An inner bottom plate (41) is provided in the casing (2A).

Abstract: An objective of the present invention is to provide a ceramic heater making it possible to heat an object to be heated, such as a silicon wafer, uniformly. The ceramic heater of the present invention is a ceramic heater wherein a heating element is formed on a surface of a ceramic plate or inside the ceramic plate, wherein: a bottomed hole is made, being directed from the opposite side to a heating surface for heating an object to be heated, toward the heating surface; the bottom of said bottomed hole is formed relatively nearer to the heating surface than the heating element; and a temperature-measuring element is set up in this bottomed hole.

Abstract: An objective of the present invention is to provide a ceramic heater making it possible to heat an object to be heated, such as a silicon wafer, uniformly. The ceramic heater of the present invention is a ceramic heater wherein a heating element is formed on a surface of a ceramic plate or inside the ceramic plate, wherein: a bottomed hole is made, being directed from the opposite side to a heating surface for heating an object to be heated, toward the heating surface; the bottom of said bottomed hole is formed relatively nearer to the heating surface than the heating element; and a temperature-measuring element is set up in this bottomed hole.

Abstract: The objective of the invention is to provide a ceramic substrate: wherein even if rapid temperature rising or rapid temperature falling is conducted, no problem of cracking or warp of the ceramic substrate occurs; wherein, in case that the ceramic substrate is a ceramic substrate constituting an electrostatic chuck, local dispersion of chuck power is eliminated, in case that the ceramic substrate is a ceramic substrate constituting a hot plate, local dispersion of temperature of a wafer treating face is eliminated, in case that the ceramic substrate is a ceramic substrate constituting a wafer prober, dispersion of applied voltage of a guard electrode or a ground electrode is eliminated and a stray capacitor or noise can be eliminated.

Abstract: An object of the present invention is to provide a heater wherein even if a through hole into which lifter pins and the like for supporting a semiconductor wafer will be inserted is made, the temperature in the vicinity of the through hole is not lowered so that the temperature in its heating face is even. The present invention is a ceramic heater comprising a ceramic substrate; and a resistance heating element formed on the surface of the ceramic substrate or inside above-mentioned ceramic substrate, above-mentioned ceramic substrate being equipped with a through hole, wherein the wall face of above-mentioned through hole has a surface roughness of Rmax=0.05 to 200 &mgr;m based on JIS B 0601.

Abstract: A hot plate unit for heating semiconductor wafers. The hot plate unit includes a case, a hot plate, a seal element, and a holding ring. The seal element is made of a heat insulative material and is arranged between the case and the hot plate. The hot plate is clamped between the holding ring and the seal element. Screws for fastening the holding ring do not contact the hot plate.

Abstract: The object of the present invention is to provide an aluminum nitride sintered body which has excellent mechanical strength and in which ceramic particles is prevented from coming off from the surface and/or side thereof and generation of free particles is suppressed. The aluminum nitride sintered body of the present invention is wherein it contains sulfur.

Abstract: A ceramic heater capable of reducing temperature uniformity at the periphery of through holes such as insertion holes and vacuum suction holes is provided, which protects wafer against thermal shocks and has improved controllability for temperature control parts such as thermocouples and temperature fuse. Further, a ceramic heater capable of uniform resin curing is provided. A heat generation body is disposed on the surface or inside of a ceramic substrate. Further, corners for the insertion holes, the recesses and the vacuum suction holes of the ceramic substrate are chamfered.