Patents by Inventor Yasutaka Ito

Yasutaka Ito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ceramic heater and ceramic joined article
    Publication number: 20050045618
    Abstract: A ceramic heater capable of stably supporting a semiconductor safer and evenly heating the whole of a semiconductor wafer or the like without generating any warp in the semiconductor wafer or the like. The ceramic heater includes a disk-like ceramic substrate, a heating element formed on a surface of or inside the ceramic substrate, and through holes for letting lifter pins pass through the ceramic substrate. The number of the formed through holes is three or more, and the through holes are formed in an area whose distance from the center of the ceramic substrate is ½ or more of the distance from the center to the outer edge of the ceramic substrate.
    Type: Application
    Filed: July 8, 2002
    Publication date: March 3, 2005
    Applicant: Ibiden co., LTD.
    Inventor: Yasutaka Ito
  • Ceramic heater
    Patent number: 6861620
    Abstract: An object of the present invention is to provide a ceramic heater making it possible to suppress an outflow of heat to a supporting case and so on to make the temperature of its ceramic substrate uniform. The ceramic heater of the present invention is a ceramic heater wherein a heating element is arranged on a surface of a ceramic substrate or inside the ceramic substrate, the surface roughness Rmax of the side face of the ceramic substrate being from 0.1 to 200 ?m according to JIS B 0601.
    Type: Grant
    Filed: September 10, 2003
    Date of Patent: March 1, 2005
    Assignee: Ibiden Co., Ltd.
    Inventors: Yasutaka Ito, Yasuji Hiramatsu
  • Aluminum nitride sintered compact, ceramic substrate, ceramic heater and electrostatic chuck
    Patent number: 6861165
    Abstract: The object of the present invention is to provide an aluminum nitride sintered body which has excellent mechanical strength and in which ceramic particles is prevented from coming off from the surface and/or side thereof and generation of free particles is suppressed. The aluminum nitride sintered body of the present invention is wherein it contains sulfur.
    Type: Grant
    Filed: February 26, 2001
    Date of Patent: March 1, 2005
    Assignee: Ibiden Co., Ltd.
    Inventors: Yasuji Hiramatsu, Yasutaka Ito
  • Ceramic substrate, ceramic heater, electrostatic chuck and wafer prober for use in semiconductor producing and inspecting devices
    Publication number: 20050029244
    Abstract: A ceramic substrate for semiconductor manufacture and/or inspection which is conducive to decrease in ?-rays radiated, to prevent electrical errors, and to decrease an electrostatic chucking force such as heater or wafer prober, generation of particles, and circuit defects. The ceramic substrate is configured such that the level of ?-rays radiated from the surface of the ceramic substrate is not higher than 0.250 c/cm2·hr.
    Type: Application
    Filed: September 20, 2004
    Publication date: February 10, 2005
    Applicant: IBIDEN CO., LTD.
    Inventors: Yasutaka Ito, Yasuji Hiramatsu
  • Hot plate unit
    Publication number: 20050031323
    Abstract: A hot plate unit for heating semiconductor wafers. The hot plate unit includes a case, a hot plate, a seal element, and a holding ring. The seal element is made of a heat insulative material and is arranged between the case and the hot plate. The hot plate is clamped between the holding ring and the seal element. Screws for fastening the holding ring do not contact the hot plate.
    Type: Application
    Filed: September 1, 2004
    Publication date: February 10, 2005
    Applicant: Ibiden Co., Ltd.
    Inventors: Jo Saito, Masakazu Furukawa, Yasutaka Ito
  • Ceramic substrate and process for producing the same
    Publication number: 20050023270
    Abstract: An object of the present invention is to provide a ceramic substrate that is superior in heat uniformity and thermal shock resistance, and has a large chuck power in the case that the ceramic substrate is made to be an electrostatic chuck. The ceramic substrate of the present invention is a ceramic substrate comprising a conductor layer formed therein, characterized in that a section of the edge of the conductor layer is in a peaked shape.
    Type: Application
    Filed: August 30, 2004
    Publication date: February 3, 2005
    Applicant: IBIDEN CO., LTD.
    Inventors: Yasuji Hiramatsu, Yasutaka Ito
  • Hot plate for semiconductor producing/examining device
    Publication number: 20050023269
    Abstract: An object of the present invention is to provide a hot plate for a semiconductor producing/examining device, in which hot plate, when an object to be heated such as a silicon wafer is heated in a state that the object is distanced by a certain distance from the heating face, air is less likely to stagnate between the silicon wafer and the heating face and thus the object to be heated can be evenly heated. Specifically, the hot plate for a semiconductor producing/examining device of the present invention comprises a resistance heating element formed on a surface of a ceramic substrate or inside the ceramic substrate, wherein the glossiness of the heating face of said ceramic substrate is 1.5% or more.
    Type: Application
    Filed: August 12, 2004
    Publication date: February 3, 2005
    Applicant: IBIDEN CO., LTD.
    Inventors: Yasuji Hiramatsu, Yasutaka Ito
  • Ceramic substrate for semiconductor production and inspection
    Patent number: 6849938
    Abstract: An object of the present invention is to provide a ceramic substrate for a semiconductor producing/examining device, capable of controlling the temperature of a resistance heating element, thereby suitably controlling the temperature of a semiconductor wafer placed on a ceramic substrate or the like and evenly heating the semiconductor wafer. The ceramic substrate for a semiconductor producing/examining device according to the present invention comprises at least a resistance heating element formed on a surface thereof or inside thereof, wherein a region: where a semiconductor wafer is directly placed; or where a semiconductor wafer is placed apart from the surface thereof while keeping a given distance, exists inside a surface region corresponding to the region where said resistance heating element is formed.
    Type: Grant
    Filed: August 24, 2001
    Date of Patent: February 1, 2005
    Assignee: IBIDEN Co., Ltd.
    Inventor: Yasutaka Ito
  • Ceramic heater
    Publication number: 20050016986
    Abstract: The invention is a ceramic heater provided with a resistor heating body formed in an interior of a ceramic substrate, characterized in that the resistor heating body is made of an electrically conductive ceramic and a sintering aid containing layer is existent at least on the surface of the resistor heating body. This heater does not generate crack even in the rapid temperature rise, and has an effect of uniformizing the heating and rapidly increasing the temperature rising rate, and is used in an industrial field of semiconductor production-inspection apparatuses including an electrostatic chuck or plasma generating device, optical apparatuses and the like.
    Type: Application
    Filed: December 2, 2002
    Publication date: January 27, 2005
    Inventor: Yasutaka Ito
  • Ceramic substrate
    Publication number: 20050018379
    Abstract: The present invention provides a ceramic substrate for use in an apparatus for manufacturing and inspecting semiconductors. The ceramic substrate comprises a through-hole having excellent tolerance performance against a drawing stress applied to an external terminal pin. The through-hole is provided with a projection which protrudes into the ceramic substrate made of aluminum nitride as primary component.
    Type: Application
    Filed: August 16, 2004
    Publication date: January 27, 2005
    Applicant: IBIDEN Co., Ltd.
    Inventor: Yasutaka Ito
  • Ceramic substrate for semiconductor manufacture/inspection apparatus, ceramic heater, electrostatic clampless holder, and substrate for wafer prober
    Publication number: 20050011878
    Abstract: The present invention provide a ceramic substrate for semiconductor manufacture and/or inspection which is conducive to decrease in ?-rays radiated, and change of thermal conductivity with passage of the time, and which is superior in the temperature controllability. This invention is related to a ceramic substrate for apparatuses for use in semiconductor manufacture and/or inspection, wherein the level of ?-rays radiated from said ceramic substrate exceeds 0.25 c/cm2·hr and is not higher than 50 c/cm2·hr.
    Type: Application
    Filed: August 16, 2004
    Publication date: January 20, 2005
    Applicant: IBIDEN CO., LTD.
    Inventors: Yasutaka Ito, Yasuji Hiramatsu
  • Aluminum nitride sintered body, ceramic substrate, ceramic heater and electrostatic chuck
    Publication number: 20050014031
    Abstract: The object of the present invention is to provide an aluminum nitride sintered body which has excellent mechanical strength and in which ceramic particles is prevented from coming off from the surface and/or side thereof and generation of free particles is suppressed. The aluminum nitride sintered body of the present invention is wherein it contains sulfur.
    Type: Application
    Filed: August 20, 2004
    Publication date: January 20, 2005
    Applicant: IBIDEN CO., LTD.
    Inventors: Yasuji Hiramatsu, Yasutaka Ito
  • Ceramic substrate
    Publication number: 20050008835
    Abstract: An object of the present invention is to provide a ceramic substrate that is superior in temperature rising/dropping characteristics and breakdown voltage at a high temperature, has a small warp amount, and is best as a substrate for semiconductor- producing/examining devices. The ceramic substrate of the present invention is a ceramic substrate having a conductor formed on the surface thereof or inside thereof, characterized in that said ceramic substrate is having 15×1011 or less pores which have a diameter of 0.5 ?m or more per m2.
    Type: Application
    Filed: July 28, 2004
    Publication date: January 13, 2005
    Applicant: IBIDEN CO., LTD.
    Inventors: Yasuji Hiramatsu, Yasutaka Ito
  • Ceramic heater
    Patent number: 6835916
    Abstract: An object of the present invention is to provide a ceramic heater making it possible to suppress an outflow of heat to a supporting case and so on to make the temperature of its ceramic substrate uniform. The ceramic heater of the present invention is a ceramic heater wherein a heating element is arranged on a surface of a ceramic substrate or inside the ceramic substrate, the surface roughness Rmax of the side face of the ceramic substrate being from 0.1 to 200 &mgr;m according to JIS B 0601.
    Type: Grant
    Filed: August 23, 2002
    Date of Patent: December 28, 2004
    Assignee: Ibiden, Co., LTD
    Inventors: Yasutaka Ito, Yasuji Hiramatsu
  • Carbon-containing aluminum nitride sintered compact and ceramic substrate for use in equipment for manufacturing or inspecting semiconductor
    Publication number: 20040242400
    Abstract: An objective of the present invention is to provide an aluminum nitride sintered body making it possible to keep a volume resistivity of 108&OHgr;·cm or more, and guarantee covering-up capability, a large radiant heat amount and measurement accuracy with a thermoviewer. A carbon-containing aluminum nitride sintered body of the present invention of the present invention comprising: carbon whose peak cannot be detected on its X-ray diffraction chart or whose peak is below its detection limit thereon; in a matrix made of aluminum nitride.
    Type: Application
    Filed: June 28, 2004
    Publication date: December 2, 2004
    Applicant: IBIDEN CO., LTD.
    Inventors: Yasutaka Ito, Yasuji Hiramatsu
  • Hot plate
    Patent number: 6825555
    Abstract: An object of the present invention is to provide a hot plate which is superior in thermal conductivity, is superior in temperature-rising/dropping property, particularly in temperature-dropping property, and has high cooling thermal efficiency at the time of cooling. The hot plate of the present invention is a hotplate comprising: a ceramic substrate; and a resistance heating element formed on the surface of said ceramic substrate or inside said ceramic substrate, wherein said ceramic substrate has a leakage quantity of 10−7 Pa·m3/sec (He) or less by measurement with a helium leakage detector.
    Type: Grant
    Filed: May 29, 2002
    Date of Patent: November 30, 2004
    Assignee: Ibiden Co., Ltd.
    Inventors: Yasuji Hiramatsu, Yasutaka Ito
  • Hot plate unit
    Publication number: 20040226935
    Abstract: A hot plate unit capable of uniformly cooling a hot plate within a short period of time. The hot plate unit (1) includes a hot plate (3) including a heating element (10) and a casing (2) that supports the hot plate. The hot plate and the casing define an internal space S1. Two intake ports (17) and two lower opened portions (31) are formed in the bottom wall (2a) of the casing.
    Type: Application
    Filed: February 12, 2004
    Publication date: November 18, 2004
    Applicant: Ibiden Company, Ltd.
    Inventors: Masakazu Furukawa, Yasutaka Ito
  • Carbon-containing aluminum nitride sintered body, and ceramic substrate for a semiconductor producing/examining device
    Publication number: 20040222211
    Abstract: An object of the present invention is to provide a carbon-containing aluminum nitride sintered body wherein no short circuit is caused since its volume resistivity at a high temperature range of 200° C. or higher (for example, about 500° C.) is sufficiently high, that is, at least 1×108 &OHgr;·cm or more, and also wherein covering-up capability, a large radiant heat amount and measurement accuracy with a thermoviewer can be assured. The carbon-containing aluminum nitride sintered body of the present invention is comprising carbon whose peaks appear near 1580 cm−1 and near 1355 cm−1 in laser Raman spectral analysis in a matrix made of aluminum nitride.
    Type: Application
    Filed: June 2, 2004
    Publication date: November 11, 2004
    Applicant: IBIDEN CO., LTD.
    Inventors: Yasuji Hiramatsu, Yasutaka Ito
  • Ceramic substrate for semiconductor manufacture/inspection apparatus, ceramic heater, electrostatic clampless holder, and substrate for wafer prober
    Patent number: 6815646
    Abstract: The present invention discloses a ceramic substrate for semiconductor manufacture and/or inspection conducive to decrease radiated &agr;-rays and to minimize changes in thermal conductivity as a function of time, thereby yielding a superior temperature controllability. This invention is related to a ceramic substrate for apparatuses for use in semiconductor manufacture and/or inspection, wherein the level of &agr;-rays radiated from said ceramic substrate exceeds 0.25 c/cm2·hr and is not higher than 50 c/cm2·hr.
    Type: Grant
    Filed: May 30, 2002
    Date of Patent: November 9, 2004
    Assignee: Ibiden Co., Ltd.
    Inventors: Yasutaka Ito, Yasuji Hiramatsu
  • Semiconductor production device ceramic plate
    Publication number: 20040217105
    Abstract: This invention has its object to provide a ceramic board which, when used as a heater, heats a silicon wafer uniformly throughout and, hence, does not damage the wafer and, when used as an electrostatic chuck, provides a sufficient chucking force.
    Type: Application
    Filed: May 28, 2004
    Publication date: November 4, 2004
    Applicant: IBIDEN CO., LTD.
    Inventors: Yasutaka Ito, Yasuji Hiramatsu