Abstract: An object is to provide a system for improving convenience for users, by which a portable electronic device or the like can be charged even in a place where utility power is not available. Another object is to provide a system which allows a service provider to easily perform customer management. A wireless power supply system includes a power storage device having a power storage portion, a terminal charging device for wirelessly supplying electric power to the power storage device, and a management server having user information. Electric power can be supplied to specified users by intercommunication of user information between the power storage device and the terminal charging device and between the terminal charging device and the management server.

Abstract: A semiconductor device includes a thin film transistor. The thin film transistor includes a semiconductor film over a substrate, in which the semiconductor film includes a pair of first regions, a pair of second regions interposed between the pair of first regions, and a channel formation region interposed between the pair of second regions. A concentration of an impurity in the pair of second regions is smaller than a concentration of the impurity in the pair of first regions. The thin film transistor includes an insulating film, in which a portion of the insulating film is provided over the semiconductor film. The thin film transistor includes a conductive film over the portion, and the conductive film includes a taper shape.

Abstract: In order to form a metal thin film, a silicide film, or the like between an upper-layer unit cell and a lower-layer unit cell in stacked-layer photoelectric conversion devices, a step of forming the thin film is additionally needed. Therefore, a problem such as decline in productivity of the photoelectric conversion devices occurs. A first unit cell including a single crystal semiconductor layer with a thickness of 10 ?m or less as a photoelectric conversion layer and a second unit cell including a non-single-crystal semiconductor layer as a photoelectric conversion layer, which is provided over the first unit cell, are at least included, and conductive clusters are dispersed between the unit cells. The conductive clusters are located between the lower-layer unit cell and the upper-layer unit cell to form an ohmic contact; thus, current flows between the both unit cells.

Abstract: An object is to provide a method of manufacturing a lithium-ion secondary battery suitable for mass production. A lithium-ion secondary battery is manufactured in such a manner that a positive electrode layer is formed on a base including a plane by chemical vapor deposition which is specifically metal-organic chemical vapor deposition, an electrolyte layer is formed on the positive electrode layer, and a negative electrode layer is formed on the electrolyte layer. The positive electrode layer is formed with a MOCVD apparatus. The MOCVD apparatus is an apparatus with which a liquid or a solid of an organic metal raw material is vaporized to produce a gas and the gas is reacted to undergo pyrolysis so that a film is formed. By forming all the layers using sputtering, evaporation, or chemical vapor deposition, a solid lithium-ion secondary battery can also be realized.

Abstract: A photoelectric conversion device with a novel anti-reflection structure. In the photoelectric conversion device, a front surface of a semiconductor substrate which serves as a light-receiving surface is covered with a group of whiskers (a group of nanowires) so that surface reflection is reduced. In other words, a semiconductor layer which has a front surface where crystals grow so that whiskers are formed is provided on the light-receiving surface side of the semiconductor substrate. The semiconductor layer has a given uneven structure, and thus has effects of reducing reflection on the front surface of the semiconductor substrate and increasing conversion efficiency.

Abstract: A photovoltaic device uses a single crystal or polycrystalline semiconductor layer which is separated from a single crystal or polycrystalline semiconductor substrate as a photoelectric conversion layer and has a SOI structure in which the semiconductor layer is bonded to a substrate having an insulating surface or an insulating substrate. A single crystal semiconductor layer which is a separated surface layer part of a single crystal semiconductor substrate and is transferred is used as a photoelectric conversion layer and includes an impurity semiconductor layer to which hydrogen or halogen is added on a light incidence surface or on an opposite surface. The semiconductor layer is fixed to a substrate having an insulating surface or an insulating substrate.

Abstract: An object of the present invention is providing a semiconductor device that is capable of improving the reliability of a semiconductor element and enhancing the mechanical strength without suppressing the scale of a circuit. The semiconductor device includes an integrated circuit sandwiched between first and second sealing films, an antenna electrically connected to the integrated circuit, the first sealing film sandwiched between a substrate and the integrated circuit, which includes a plurality of first insulating films and at least one second insulating film sandwiched therebetween, the second sealing film including a plurality of third insulating films and at least one fourth insulating film sandwiched therebetween. The second insulating film has lower stress than the first insulting film and the fourth insulating film has lower stress than the third insulating film. The first and third insulating films are inorganic insulating films.

Abstract: In the field of portable electronic devices in the future, portable electronic devices will be desired, which are smaller and more lightweight and can be used for a long time period by one-time charging, as apparent from provision of one-segment partial reception service “1-seg” of terrestrial digital broadcasting that covers the mobile objects such as a cellular phone. Therefore, the need for a power storage device is increased, which is small and lightweight and capable of being charged without receiving power from commercial power. The power storage device includes an antenna for receiving an electromagnetic wave, a capacitor for storing power, and a circuit for controlling store and supply of the power. When the antenna, the capacitor, and the control circuit are integrally formed and thinned, a structural body formed of ceramics or the like is partially used.

Abstract: A semiconductor device is provided, which comprises a first electrode, crystalline semiconductor particles, a semiconductor layer, and a second electrode. The crystalline semiconductor particles of which adjacent particles are fusion-bonded, the crystalline semiconductor particles have a first conductivity type, and the semiconductor layer has a second conductivity type which is different from the first conductivity type.

Abstract: An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost.

Abstract: An object is to provide a method of activating impurity elements added to a semiconductor film, and a method of gettering, in a process of manufacturing a semiconductor device using a substrate having a low resistance to heat, such as glass, without changing the shape of the substrate, by using a short time heat treatment process. Another object is to provide a heat treatment apparatus that makes this type of heat treatment process possible. A unit for supplying a gas from the upstream side of a reaction chamber, a unit for heating the gas in the upstream side of the reaction chamber, a unit for holding a substrate to be processed in the downstream side of the reaction chamber, and a unit for circulating the gas from the downstream side of the reaction chamber to the upstream side are prepared. The amount of electric power used in heating the gas can be economized by circulating the gas used to heat the substrate to be processed.

Abstract: The present invention intends to realize a narrow frame of a system on panel. In addition to this, a system mounted on a panel is intended to make higher and more versatile in the functionality. In the invention, on a panel on which a pixel portion (including a liquid crystal element, a light-emitting element) and a driving circuit are formed, integrated circuits that have so far constituted an external circuit are laminated and formed. Specifically, of the pixel portion and the driving circuit on the panel, on a position that overlaps with the driving circuit, any one kind or a plurality of kinds of the integrated circuits is formed by laminating according to a transcription technique.

Abstract: The present invention relates to a method for manufacturing a display device including a p-channel thin film transistor and an n-channel thin film transistor having a microcrystalline semiconductor film each of which are an inverted-staggered type, and relates to a method for formation of an insulating film and a semiconductor film which are included in the thin film transistor. Two or more kinds of high-frequency powers having different frequencies are supplied to an electrode for generating glow discharge plasma in a reaction chamber. High-frequency powers having different frequencies are supplied to generate glow discharge plasma, so that a thin film of a semiconductor or an insulator is formed. High-frequency powers having different frequencies (different wavelength) are superimposed and applied to the electrode of a plasma CVD apparatus, so that densification and uniformity of plasma for preventing the effect of surface standing wave of plasma can be realized.

Abstract: A photovoltaic device uses a single crystal or polycrystalline semiconductor layer which is separated from a single crystal or polycrystalline semiconductor substrate as a photoelectric conversion layer and has a SOI structure in which the semiconductor layer is bonded to a substrate having an insulating surface or an insulating substrate. A single crystal semiconductor layer which is a separated surface layer part of a single crystal semiconductor substrate and is transferred is used as a photoelectric conversion layer and includes an impurity semiconductor layer to which hydrogen or halogen is added on a light incidence surface or on an opposite surface. The semiconductor layer is fixed to a substrate having an insulating surface or an insulating substrate.

Abstract: The invention provides a semiconductor device including a memory of a simple structure to provide an inexpensive semiconductor device and a driving method thereof. The semiconductor device of the invention includes a phase change memory including a memory cell array having a plurality of memory cells, a control circuit that controls the phase change memory, and an antenna. The memory cell array includes a plurality of bit lines that extend in a first direction and word lines that extend in a second direction perpendicular to the first direction. Each of the plurality of memory cells includes a phase change layer provided between the bit lines and the word lines. In the semiconductor device having the aforementioned structure, one or both of a conductive layer that forms the bit lines and a conductive layer that forms the word lines transmits light.

Abstract: By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer.

Abstract: To sophisticate a portable electronic appliance without hindering reduction of the weight and the size, more specifically, to sophisticate a liquid crystal display apparatus installed in a portable electronic appliance without hindering the mechanical strength, a liquid crystal display apparatus includes a first plastic substrate, a light-emitting device which is disposed over the first plastic substrate, resin which covers the light-emitting device, an insulating film which is in contact with the resin, a semiconductor device which is in contact with the insulating film, a liquid crystal cell which is electrically connected to the semiconductor device, and a second plastic substrate, wherein the semiconductor device and the liquid crystal cell are disposed between the first plastic substrate and the second plastic substrate.

Abstract: Although a product having such the IC chip has been diffused, information on the product may be capable of being perceived, abstracted, falsified, or the like by a third person with his external device during distribution of the product or after purchase of the product. Further, privacy may be seriously infringed. Paper money, various products, and the like are disclosed according to the present invention with an integrated circuit device having a switching memory for controlling reading and writing of information (lock/unlock of information) in order to protect the information recorded and stored in the integrated circuit such as an IC chip installed to the product or the like.

Abstract: A first current source supplies a tail current It to a plurality of differential pairs. A pre-driver outputs gate signals to the gates of transistors of the corresponding differential pair. A pre-driver is configured to switch the state between the enable state and the disable state. In the enable state, the pre-driver outputs the gate signals that correspond to the differential signals. In the disable state, the pre-driver outputs the gate signals having levels which instruct the transistors of the corresponding differential pair to switch off.

Abstract: A constitution of the display device of the invention is shown in the following. The display device includes a pixel unit including TFTs of which the active layer contains an organic semiconductor material for forming channel portions in the opening portions in an insulating layer arranged to meet the gate electrodes. The pixel unit further includes a contrast media formed on the electrodes connected to the TFTs for changing the reflectivity upon the application of an electric field, or microcapsules containing electrically charged particles that change the reflectivity upon the application of an electric field. The pixel unit is sandwiched by plastic substrates, and barrier layers including an inorganic insulating material are provided between the plastic substrates and the pixel unit. The purpose of the present invention is to supply display devices which are excellent in productivity, light in weight and flexible.