Patents by Inventor Ye Seul Kim

Ye Seul Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220012819
    Abstract: Provided is a community management method including: receiving, from a first terminal, a generation request for a standby community; generating the standby community including a user of the first terminal as a participant, according to the generation request for the standby community; and generating a regular community including participants of the standby community as members in response to a number of the participants of the standby community reaching a target number of the standby community, wherein a writing function is restricted in the standby community and allowed in the regular community.
    Type: Application
    Filed: July 8, 2021
    Publication date: January 13, 2022
    Applicant: NAVER CORPORATION
    Inventors: Sa Ra YOON, Seok Woo LEE, Jane CHOI, Hyun Min LEE, Si Hyeon PARK, Dae Hyun PARK, Jung Hun BAE, Young Bae HYUN, Sun Mee KIM, Kyung Man KWAK, Young Sun MIN, Yong Kyu LEE, Man Joon KIM, Ji Hoon KO, O Shik KWON, Hyo Jong KIM, Ye Seul KIM, Ji Hyun KIM, Jung Min LEE
  • Patent number: 10937925
    Abstract: A light emitting diode chip including a light emitting structure and a distributed Bragg reflector (DBR) disposed thereon to reflect light, the DBR includes alternatively stacked first material layers having a low refractive index and second material layers having a high refractive index, and, with respect to a peak wavelength ? of light emitted, the DBR includes a first region having pairs of the first and second material layers each having an optical thickness greater than 0.25? and less than 0.3?, a last pair of the first and second material layers disposed farthest from the light emitting structure, and a second region between the first region and the last pair, each of the material layers in the second region has an optical thickness less than 0.25?, and the first material layers have a greater optical thickness deviation than that of the second material layers in the second region.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: March 2, 2021
    Inventors: Ye Seul Kim, Kyoung Wan Kim
  • Patent number: 10923642
    Abstract: A light emitting diode including an n-type semiconductor layer, a mesa disposed on the n-type semiconductor layer and exposing a portion thereof, and including an active layer and a p-type semiconductor layer, first and second bonding pads electrically connected to the n-type and p-type semiconductor layers, respectively, and a first insulation layer at least partially disposed between the exposed portion of the n-type semiconductor layer exposed by the mesa and the second bonding pad, in which the exposed portion of the n-type semiconductor layer has a first portion having a shortest distance to the second bonding pad, the first insulation layer covers a portion of the p-type semiconductor layer disposed between the second bonding pad and the first portion of the n-type semiconductor layer, and the first insulation layer is disposed along an edge of the p-type semiconductor layer adjacent to the exposed portion of the n-type semiconductor layer.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: February 16, 2021
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Sang Won Woo, Ye Seul Kim, Tae Jun Park, Duk Il Suh
  • Publication number: 20200411725
    Abstract: A light emitting diode chip including a light emitting structure and a distributed Bragg reflector (DBR) having first, second, and third regions and including first material layers having a low index of refraction and second material layers having a high index of refraction, in which the first material layers include a first group having an optical thickness greater than 0.25?+10%, a second group having an optical thickness in a range of 0.25??10% to 0.25?+10%, and a third group having an optical thickness less than 0.25??10%, the first region has alternately disposed first and second groups, the second region has the third group, the first material layers in the third region have a first material layer having an optical thickness less than 0.25? and greater than 0.25?, the second material layers have a smaller average optical thickness than the first group of the first material layers.
    Type: Application
    Filed: September 10, 2020
    Publication date: December 31, 2020
    Inventors: Ye Seul KIM, Sang Won Woo, Kyoung Wan KIM
  • Patent number: 10840409
    Abstract: A light emitting diode includes a current blocking layer interposed between a first connection pad and a first conductivity type semiconductor layer to improve efficiency in spreading of electric current supplied to the first conductivity type semiconductor layer.
    Type: Grant
    Filed: February 1, 2019
    Date of Patent: November 17, 2020
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Ji Hye Kim, Kyoung Wan Kim, Ye Seul Kim
  • Patent number: 10804437
    Abstract: A light emitting diode chip including a light emitting structure having an active layer, and a distributed Bragg reflector (DBR) disposed to reflect light emitted therefrom. The DBR has first and second regions, and a third region therebetween. The first region is closer to the light emitting structure than the second and third regions. The DBR includes first material layers having a high index of refraction and second material layers having a low index of refraction alternately disposed one over another. The first material layers include first, second, and third groups having an optical thickness greater than 0.25?+10%, in a range of 0.25??10% to 0.25?+10%, and less than 0.25??10%, respectively. With respect to a central wavelength (?: 554 nm) of the visible range, the first region has the first and second groups, the second region has the third group, and the third region has the second and third groups.
    Type: Grant
    Filed: June 17, 2016
    Date of Patent: October 13, 2020
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Ye Seul Kim, Sang Won Woo, Kyoung Wan Kim
  • Patent number: 10734554
    Abstract: A light emitting diode including a light emitting structure including an active layer, a first distributed Bragg reflector (DBR) disposed on one side of the light emitting structure to reflect light emitted from the light emitting structure, and an interfacial layer disposed between the light emitting structure and the first DBR, in which the first DBR includes first material layers having a low refractive index and second material layers having a high refractive index alternately stacked one above another, the interfacial layer has a lower refractive index than the first material layers, and has a thickness greater than a thickness of each of the first and second material layers, and one a second material layer of the second material layers that is closest to the interfacial layer includes a first sub-layer and a second sub-layer, the first sub-layer having a density lower than that of the second sub-layer.
    Type: Grant
    Filed: March 15, 2019
    Date of Patent: August 4, 2020
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Min Chan Heo, Kyoung Wan Kim, Ye Seul Kim, Yong Woo Ryu
  • Patent number: 10707382
    Abstract: A light-emitting element according to an embodiment of the present document has a transparent electrode having an opening, and the transparent electrode has a protrusion on a side surface of the opening. A second electrode pad is arranged on the opening of the transparent electrode, and abuts the protrusion. Accordingly, peeling of the second electrode pad can be prevented, thereby improving the reliability of the light-emitting element.
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: July 7, 2020
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Sang Hyun Oh, Duk Il Suh, Sang Won Woo, Ji Hye Kim
  • Publication number: 20200212263
    Abstract: A light emitting diode including a light emitting structure including an active layer, a first distributed Bragg reflector (DBR) disposed on one side of the light emitting structure to reflect light emitted from the light emitting structure, and an interfacial layer disposed between the light emitting structure and the first DBR, in which the first DBR includes first material layers having a low refractive index and second material layers having a high refractive index alternately stacked one above another, the interfacial layer has a lower refractive index than the first material layers, and has a thickness greater than a thickness of each of the first and second material layers, and one a second material layer of the second material layers that is closest to the interfacial layer includes a first sub-layer and a second sub-layer, the first sub-layer having a density lower than that of the second sub-layer.
    Type: Application
    Filed: March 15, 2019
    Publication date: July 2, 2020
    Inventors: Min Chan HEO, Kyoung Wan Kim, Ye Seul Kim, Yong Woo Ryu
  • Publication number: 20200208166
    Abstract: The present invention relates to an artificially manipulated unsaturated fatty acid biosynthesis-associated factor and use thereof to increase the content of a specific unsaturated fatty acid of a plant body. More particularly, the present invention relates to a system capable of artificially controlling unsaturated fatty acid biosynthesis and a plant body produced thereby, which include an artificially manipulated unsaturated fatty acid biosynthesis-associated factor to control unsaturated fatty acid biosynthesis and a composition capable of artificially manipulating the factor. In a specific aspect, the present invention relates to artificially manipulated unsaturated fatty acid biosynthesis-associated factors such as FAD2, FAD3, FADE, FAD7 and FAD8 and/or an unsaturated fatty acid biosynthesis controlling system by an expression product thereof.
    Type: Application
    Filed: September 26, 2017
    Publication date: July 2, 2020
    Inventors: Seok Joong KIM, Ok Jae KOO, Min Hee JUNG, Ye Seul KIM
  • Patent number: 10672951
    Abstract: The light emitting element is provided to comprise: a first conductive type semiconductor layer; a mesa; a current blocking layer; a transparent electrode; a first electrode pad and a first electrode extension; a second electrode pad and a second electrode extension; and an insulation layer partially located on the lower portion of the first electrode, wherein the mesa includes at least one groove formed on a side thereof, the first conductive type semiconductor layer is partially exposed through the groove, the insulation layer includes an opening through which the exposed first conductive type semiconductor layer is at least partially exposed, the first electrode extension includes extension contact portions in contact with the first conductive type semiconductor layer through an opening, and the second electrode extension includes an end with a width different from the average width of the second electrode extension.
    Type: Grant
    Filed: December 15, 2017
    Date of Patent: June 2, 2020
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Duk Il Suh, Ye Seul Kim, Kyoung Wan Kim, Sang Won Woo, Ji Hye Kim
  • Patent number: 10608141
    Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: March 31, 2020
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Yeo Jin Yoon, Sang Hyun Oh, Keum Ju Lee, Jin Woong Lee, Da Yeon Jeong, Sang Won Woo
  • Publication number: 20190371967
    Abstract: A light emitting diode chip including a light emitting structure and a distributed Bragg reflector (DBR) disposed thereon to reflect light, the DBR includes alternatively stacked first material layers having a low refractive index and second material layers having a high refractive index, and, with respect to a peak wavelength ? of light emitted, the DBR includes a first region having pairs of the first and second material layers each having an optical thickness greater than 0.25? and less than 0.3?, a last pair of the first and second material layers disposed farthest from the light emitting structure, and a second region between the first region and the last pair, each of the material layers in the second region has an optical thickness less than 0.25?, and the first material layers have a greater optical thickness deviation than that of the second material layers in the second region.
    Type: Application
    Filed: May 30, 2019
    Publication date: December 5, 2019
    Inventors: Ye Seul Kim, Kyoung Wan Kim
  • Publication number: 20190371990
    Abstract: A light emitting diode including an n-type semiconductor layer, a mesa disposed on the n-type semiconductor layer and exposing a portion thereof, and including an active layer and a p-type semiconductor layer, first and second bonding pads electrically connected to the n-type and p-type semiconductor layers, respectively, and a first insulation layer at least partially disposed between the exposed portion of the n-type semiconductor layer exposed by the mesa and the second bonding pad, in which the exposed portion of the n-type semiconductor layer has a first portion having a shortest distance to the second bonding pad, the first insulation layer covers a portion of the p-type semiconductor layer disposed between the second bonding pad and the first portion of the n-type semiconductor layer, and the first insulation layer is disposed along an edge of the p-type semiconductor layer adjacent to the exposed portion of the n-type semiconductor layer.
    Type: Application
    Filed: May 30, 2019
    Publication date: December 5, 2019
    Inventors: San Won WOO, Ye Seul KIM, Tae Jun PARK, Duk Il SUH
  • Patent number: 10359153
    Abstract: A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; at least one groove disposed on a side surface of the mesa forming a concave region; an extension electrode forming ohmic contact with the first conductive type semiconductor layer in the concave region; an insulation layer covering the extension electrode, the first conductive type semiconductor layer, and the mesa, and including at least one first opening exposing the extension electrode and a second opening; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening.
    Type: Grant
    Filed: October 22, 2018
    Date of Patent: July 23, 2019
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Sang Won Woo, Ji Hye Kim
  • Patent number: 10340418
    Abstract: Described herein is a highly efficient light emitting device.
    Type: Grant
    Filed: January 8, 2018
    Date of Patent: July 2, 2019
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Ji Hye Kim, Sang Won Woo
  • Publication number: 20190165208
    Abstract: A light emitting diode includes a current blocking layer interposed between a first connection pad and a first conductivity type semiconductor layer to improve efficiency in spreading of electric current supplied to the first conductivity type semiconductor layer.
    Type: Application
    Filed: February 1, 2019
    Publication date: May 30, 2019
    Inventors: Ji Hye KIM, Kyoung Wan KIM, Ye Seul KIM
  • Publication number: 20190123244
    Abstract: A light-emitting element according to an embodiment of the present document has a transparent electrode having an opening, and the transparent electrode has a protrusion on a side surface of the opening. A second electrode pad is arranged on the opening of the transparent electrode, and abuts the protrusion. Accordingly, peeling of the second electrode pad can be prevented, thereby improving the reliability of the light-emitting element.
    Type: Application
    Filed: December 12, 2018
    Publication date: April 25, 2019
    Inventors: Ye Seul KIM, Kyoung Wan KIM, Sang Hyun OH, Duk Il SUH, Sang Won WOO, Ji Hye KIM
  • Patent number: 10243109
    Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.
    Type: Grant
    Filed: April 27, 2018
    Date of Patent: March 26, 2019
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jin Woong Lee, Kyoung Wan Kim, Yeo Jin Yoon, Ye Seul Kim
  • Publication number: 20190067526
    Abstract: A light emitting diode chip including a light emitting structure having an active layer, and a distributed Bragg reflector (DBR) disposed to reflect light emitted therefrom. The DBR has first and second regions, and a third region therebetween. The first region is closer to the light emitting structure than the second and third regions. The DBR includes first material layers having a high index of refraction and second material layers having a low index of refraction alternately disposed one over another. The first material layers include first, second, and third groups having an optical thickness greater than 0.25?+10%, in a range of 0.25??10% to 0.25?+10%, and less than 0.25??10%, respectively. With respect to a central wavelength (?: 554 nm) of the visible range, the first region has the first and second groups, the second region has the third group, and the third region has the second and third groups.
    Type: Application
    Filed: June 17, 2016
    Publication date: February 28, 2019
    Inventors: Ye Seul KIM, Sang Won WOO, Kyoung Wan KIM