Patents by Inventor Ye Seul Kim

Ye Seul Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10937925
    Abstract: A light emitting diode chip including a light emitting structure and a distributed Bragg reflector (DBR) disposed thereon to reflect light, the DBR includes alternatively stacked first material layers having a low refractive index and second material layers having a high refractive index, and, with respect to a peak wavelength ? of light emitted, the DBR includes a first region having pairs of the first and second material layers each having an optical thickness greater than 0.25? and less than 0.3?, a last pair of the first and second material layers disposed farthest from the light emitting structure, and a second region between the first region and the last pair, each of the material layers in the second region has an optical thickness less than 0.25?, and the first material layers have a greater optical thickness deviation than that of the second material layers in the second region.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: March 2, 2021
    Inventors: Ye Seul Kim, Kyoung Wan Kim
  • Patent number: 10923642
    Abstract: A light emitting diode including an n-type semiconductor layer, a mesa disposed on the n-type semiconductor layer and exposing a portion thereof, and including an active layer and a p-type semiconductor layer, first and second bonding pads electrically connected to the n-type and p-type semiconductor layers, respectively, and a first insulation layer at least partially disposed between the exposed portion of the n-type semiconductor layer exposed by the mesa and the second bonding pad, in which the exposed portion of the n-type semiconductor layer has a first portion having a shortest distance to the second bonding pad, the first insulation layer covers a portion of the p-type semiconductor layer disposed between the second bonding pad and the first portion of the n-type semiconductor layer, and the first insulation layer is disposed along an edge of the p-type semiconductor layer adjacent to the exposed portion of the n-type semiconductor layer.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: February 16, 2021
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Sang Won Woo, Ye Seul Kim, Tae Jun Park, Duk Il Suh
  • Publication number: 20200411725
    Abstract: A light emitting diode chip including a light emitting structure and a distributed Bragg reflector (DBR) having first, second, and third regions and including first material layers having a low index of refraction and second material layers having a high index of refraction, in which the first material layers include a first group having an optical thickness greater than 0.25?+10%, a second group having an optical thickness in a range of 0.25??10% to 0.25?+10%, and a third group having an optical thickness less than 0.25??10%, the first region has alternately disposed first and second groups, the second region has the third group, the first material layers in the third region have a first material layer having an optical thickness less than 0.25? and greater than 0.25?, the second material layers have a smaller average optical thickness than the first group of the first material layers.
    Type: Application
    Filed: September 10, 2020
    Publication date: December 31, 2020
    Inventors: Ye Seul KIM, Sang Won Woo, Kyoung Wan KIM
  • Patent number: 10843173
    Abstract: A ferrite catalyst for oxidative dehydrogenation and a method of preparing the same. The ferrite catalyst is prepared using an epoxide-based sol-gel method, wherein a step of burning includes a first burning step, in which burning is performed at a temperature of 70 to 200° C.; and a second burning step, in which burning is performed after the temperature is raised from a temperature in the range of greater than 200° C. to 250° C. to a temperature in the range of 600 to 900° C.
    Type: Grant
    Filed: January 4, 2018
    Date of Patent: November 24, 2020
    Assignee: LG CHEM, LTD.
    Inventors: Sun Hwan Hwang, Dong Hyun Ko, Jun Han Kang, Kyong Yong Cha, Joo Hyuck Lee, Hyun Seok Nam, Dae Heung Choi, Myung Ji Suh, Ye Seul Hwang, Jun Kyu Han, Sang Jin Han, Seong Min Kim
  • Patent number: 10840409
    Abstract: A light emitting diode includes a current blocking layer interposed between a first connection pad and a first conductivity type semiconductor layer to improve efficiency in spreading of electric current supplied to the first conductivity type semiconductor layer.
    Type: Grant
    Filed: February 1, 2019
    Date of Patent: November 17, 2020
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Ji Hye Kim, Kyoung Wan Kim, Ye Seul Kim
  • Patent number: 10804437
    Abstract: A light emitting diode chip including a light emitting structure having an active layer, and a distributed Bragg reflector (DBR) disposed to reflect light emitted therefrom. The DBR has first and second regions, and a third region therebetween. The first region is closer to the light emitting structure than the second and third regions. The DBR includes first material layers having a high index of refraction and second material layers having a low index of refraction alternately disposed one over another. The first material layers include first, second, and third groups having an optical thickness greater than 0.25?+10%, in a range of 0.25??10% to 0.25?+10%, and less than 0.25??10%, respectively. With respect to a central wavelength (?: 554 nm) of the visible range, the first region has the first and second groups, the second region has the third group, and the third region has the second and third groups.
    Type: Grant
    Filed: June 17, 2016
    Date of Patent: October 13, 2020
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Ye Seul Kim, Sang Won Woo, Kyoung Wan Kim
  • Patent number: 10790428
    Abstract: The present invention relates to a P-type skutterudite thermoelectric material, a method for preparing the same, and a thermoelectric device including the same. More specifically, the present invention relates to a P-type skutterudite thermoelectric material into which a specific filler and charge compensator are introduced, and which exhibits high thermoelectric performance, a method for preparing the same, and a thermoelectric device including the same.
    Type: Grant
    Filed: November 2, 2016
    Date of Patent: September 29, 2020
    Assignee: LG CHEM, LTD.
    Inventors: Yu Ho Min, Su Jeong Lee, Ye Seul Lee, Cheol-Hee Park, Jae Hyun Kim
  • Patent number: 10756309
    Abstract: A method of manufacturing a light-emitting display device, the method including forming a first electrode on a substrate, the substrate including a plurality of pixel regions divided by a non-pixel region, in each of the pixel regions; forming a pixel defining layer, the pixel defining layer having a plurality of pixel openings, each of the pixel openings exposing the first electrode, on the substrate; forming a hole injection layer on the first electrode; forming a lyophilic layer on the hole injection layer to completely overlap the hole injection layer; forming a hole transport layer on the lyophilic layer; forming a light-emitting layer on the hole transport layer; and forming a second electrode on the light-emitting layer.
    Type: Grant
    Filed: May 1, 2019
    Date of Patent: August 25, 2020
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Hyang Shik Kong, Yoon Ho Kang, Dong Hoon Kwak, Sung Woong Kim, Yool Guk Kim, Jae Hoon Kim, Ye Seul Na, Seok Soon Back, Jae Kwon Hwang
  • Patent number: 10734554
    Abstract: A light emitting diode including a light emitting structure including an active layer, a first distributed Bragg reflector (DBR) disposed on one side of the light emitting structure to reflect light emitted from the light emitting structure, and an interfacial layer disposed between the light emitting structure and the first DBR, in which the first DBR includes first material layers having a low refractive index and second material layers having a high refractive index alternately stacked one above another, the interfacial layer has a lower refractive index than the first material layers, and has a thickness greater than a thickness of each of the first and second material layers, and one a second material layer of the second material layers that is closest to the interfacial layer includes a first sub-layer and a second sub-layer, the first sub-layer having a density lower than that of the second sub-layer.
    Type: Grant
    Filed: March 15, 2019
    Date of Patent: August 4, 2020
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Min Chan Heo, Kyoung Wan Kim, Ye Seul Kim, Yong Woo Ryu
  • Patent number: 10707382
    Abstract: A light-emitting element according to an embodiment of the present document has a transparent electrode having an opening, and the transparent electrode has a protrusion on a side surface of the opening. A second electrode pad is arranged on the opening of the transparent electrode, and abuts the protrusion. Accordingly, peeling of the second electrode pad can be prevented, thereby improving the reliability of the light-emitting element.
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: July 7, 2020
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Sang Hyun Oh, Duk Il Suh, Sang Won Woo, Ji Hye Kim
  • Publication number: 20200212263
    Abstract: A light emitting diode including a light emitting structure including an active layer, a first distributed Bragg reflector (DBR) disposed on one side of the light emitting structure to reflect light emitted from the light emitting structure, and an interfacial layer disposed between the light emitting structure and the first DBR, in which the first DBR includes first material layers having a low refractive index and second material layers having a high refractive index alternately stacked one above another, the interfacial layer has a lower refractive index than the first material layers, and has a thickness greater than a thickness of each of the first and second material layers, and one a second material layer of the second material layers that is closest to the interfacial layer includes a first sub-layer and a second sub-layer, the first sub-layer having a density lower than that of the second sub-layer.
    Type: Application
    Filed: March 15, 2019
    Publication date: July 2, 2020
    Inventors: Min Chan HEO, Kyoung Wan Kim, Ye Seul Kim, Yong Woo Ryu
  • Publication number: 20200208166
    Abstract: The present invention relates to an artificially manipulated unsaturated fatty acid biosynthesis-associated factor and use thereof to increase the content of a specific unsaturated fatty acid of a plant body. More particularly, the present invention relates to a system capable of artificially controlling unsaturated fatty acid biosynthesis and a plant body produced thereby, which include an artificially manipulated unsaturated fatty acid biosynthesis-associated factor to control unsaturated fatty acid biosynthesis and a composition capable of artificially manipulating the factor. In a specific aspect, the present invention relates to artificially manipulated unsaturated fatty acid biosynthesis-associated factors such as FAD2, FAD3, FADE, FAD7 and FAD8 and/or an unsaturated fatty acid biosynthesis controlling system by an expression product thereof.
    Type: Application
    Filed: September 26, 2017
    Publication date: July 2, 2020
    Inventors: Seok Joong KIM, Ok Jae KOO, Min Hee JUNG, Ye Seul KIM
  • Patent number: 10672951
    Abstract: The light emitting element is provided to comprise: a first conductive type semiconductor layer; a mesa; a current blocking layer; a transparent electrode; a first electrode pad and a first electrode extension; a second electrode pad and a second electrode extension; and an insulation layer partially located on the lower portion of the first electrode, wherein the mesa includes at least one groove formed on a side thereof, the first conductive type semiconductor layer is partially exposed through the groove, the insulation layer includes an opening through which the exposed first conductive type semiconductor layer is at least partially exposed, the first electrode extension includes extension contact portions in contact with the first conductive type semiconductor layer through an opening, and the second electrode extension includes an end with a width different from the average width of the second electrode extension.
    Type: Grant
    Filed: December 15, 2017
    Date of Patent: June 2, 2020
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Duk Il Suh, Ye Seul Kim, Kyoung Wan Kim, Sang Won Woo, Ji Hye Kim
  • Patent number: 10608141
    Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: March 31, 2020
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Yeo Jin Yoon, Sang Hyun Oh, Keum Ju Lee, Jin Woong Lee, Da Yeon Jeong, Sang Won Woo
  • Patent number: 10543478
    Abstract: The present invention relates to a method of preparing a catalyst for oxidative dehydrogenation. More particularly, the method of preparing a catalyst for oxidative dehydrogenation includes a first step of preparing an aqueous iron-metal precursor solution by dissolving a trivalent cation iron (Fe) precursor and a divalent cation metal (A) precursor in distilled water; a second step of obtaining a slurry of an iron-metal oxide by reacting the aqueous iron-metal precursor solution with ammonia water in a coprecipitation bath to form an iron-metal oxide (step b) and then filtering the iron-metal oxide; and a third step of heating the iron-metal oxide slurry. In accordance with the present invention, a metal oxide catalyst, as a catalyst for oxidative dehydrogenation, having a high spinel phase structure proportion may be economically prepared by a simple process.
    Type: Grant
    Filed: March 7, 2017
    Date of Patent: January 28, 2020
    Assignee: LG CHEM, LTD.
    Inventors: Kyong Yong Cha, Myung Ji Suh, Dong Hyun Ko, Dae Heung Choi, Ye Seul Hwang, Jun Kyu Han, Sun Hwan Hwang, Seong Min Kim
  • Patent number: 10518250
    Abstract: The present invention relates to a ferrite-based catalyst composite, a method of preparing the same, and a method of preparing butadiene using the same. More particularly, the present invention provides a ferrite-based catalyst composite having a shape that allows effective dispersion of excess heat generated in a butadiene production process and prevention of catalyst damage and side reaction occurrence by reducing direct exposure of a catalyst to heat, a method of preparing the ferrite-based catalyst composite, and a method of preparing butadiene capable of lowering the temperature of a hot spot and reducing generation of Cox by allowing active sites of a catalyst to have a broad temperature gradient (profile) during oxidative dehydrogenation using the ferrite-based catalyst composite, and thus, providing improved process efficiency.
    Type: Grant
    Filed: February 17, 2017
    Date of Patent: December 31, 2019
    Assignee: LG CHEM, LTD.
    Inventors: Dae Heung Choi, Dong Hyun Ko, Kyong Yong Cha, Myung Ji Suh, Ye Seul Hwang, Sun Hwan Hwang, Seong Min Kim, Jun Han Kang, Joo Hyuck Lee, Hyun Seok Nam, Sang Jin Han, Jun Kyu Han
  • Patent number: 10516741
    Abstract: According to an embodiment, a smart control device includes an input device; a communication circuit; a connection circuit configured to be electrically connected to another control device; a processor; and a memory. Wherein the memory stores one or more instructions that, when executed, cause the processor to when the control device is not connected with the another control device through the connection circuit, transmit a message associated with a request for execution of a first function to the external device through the communication circuit when receiving an input signal based on the input device; and in when control device is connected with the another control device through the connection circuit, transmit a message associated with a request for execution of a second function corresponding to the second state to the external device through the communication circuit when receiving a user input associated with execution of a specified function.
    Type: Grant
    Filed: May 2, 2018
    Date of Patent: December 24, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ye Seul Hong, Jae Seok Myung, Yoon Su Kim, Sahng Hee Bahn, Jung Joo Sohn, Kyung Ho Jeong, Young Kyu Jin
  • Publication number: 20190371990
    Abstract: A light emitting diode including an n-type semiconductor layer, a mesa disposed on the n-type semiconductor layer and exposing a portion thereof, and including an active layer and a p-type semiconductor layer, first and second bonding pads electrically connected to the n-type and p-type semiconductor layers, respectively, and a first insulation layer at least partially disposed between the exposed portion of the n-type semiconductor layer exposed by the mesa and the second bonding pad, in which the exposed portion of the n-type semiconductor layer has a first portion having a shortest distance to the second bonding pad, the first insulation layer covers a portion of the p-type semiconductor layer disposed between the second bonding pad and the first portion of the n-type semiconductor layer, and the first insulation layer is disposed along an edge of the p-type semiconductor layer adjacent to the exposed portion of the n-type semiconductor layer.
    Type: Application
    Filed: May 30, 2019
    Publication date: December 5, 2019
    Inventors: San Won WOO, Ye Seul KIM, Tae Jun PARK, Duk Il SUH
  • Publication number: 20190371967
    Abstract: A light emitting diode chip including a light emitting structure and a distributed Bragg reflector (DBR) disposed thereon to reflect light, the DBR includes alternatively stacked first material layers having a low refractive index and second material layers having a high refractive index, and, with respect to a peak wavelength ? of light emitted, the DBR includes a first region having pairs of the first and second material layers each having an optical thickness greater than 0.25? and less than 0.3?, a last pair of the first and second material layers disposed farthest from the light emitting structure, and a second region between the first region and the last pair, each of the material layers in the second region has an optical thickness less than 0.25?, and the first material layers have a greater optical thickness deviation than that of the second material layers in the second region.
    Type: Application
    Filed: May 30, 2019
    Publication date: December 5, 2019
    Inventors: Ye Seul Kim, Kyoung Wan Kim
  • Patent number: 10486150
    Abstract: The present invention relates to a catalyst for oxidative dehydrogenation and a method of preparing the same. More particularly, the present invention provides a catalyst for oxidative dehydrogenation allowing oxidative dehydrogenation reactivity to be secured while increasing a first pass yield, and a method of preparing the catalyst.
    Type: Grant
    Filed: December 21, 2016
    Date of Patent: November 26, 2019
    Assignee: LG CHEM, LTD.
    Inventors: Sun Hwan Hwang, Dong Hyun Ko, Kyong Yong Cha, Dae Heung Choi, Myung Ji Suh, Ye Seul Hwang, Jun Kyu Han, Seong Min Kim, Jun Han Kang, Joo Hyuck Lee, Hyun Seok Nam, Sang Jin Han