Patents by Inventor Ye Seul Kim

Ye Seul Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180166608
    Abstract: The light emitting element is provided to comprise: a first conductive type semiconductor layer; a mesa; a current blocking layer; a transparent electrode; a first electrode pad and a first electrode extension; a second electrode pad and a second electrode extension; and an insulation layer partially located on the lower portion of the first electrode, wherein the mesa includes at least one groove formed on a side thereof, the first conductive type semiconductor layer is partially exposed through the groove, the insulation layer includes an opening through which the exposed first conductive type semiconductor layer is at least partially exposed, the first electrode extension includes extension contact portions in contact with the first conductive type semiconductor layer through an opening, and the second electrode extension includes an end with a width different from the average width of the second electrode extension.
    Type: Application
    Filed: December 15, 2017
    Publication date: June 14, 2018
    Inventors: Duk Il Suh, Ye Seul Kim, Kyoung Wan Kim, Sang Won Woo, Ji Hye Kim
  • Patent number: 9978910
    Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.
    Type: Grant
    Filed: July 25, 2016
    Date of Patent: May 22, 2018
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Jin Woong Lee, Kyoung Wan Kim, Yeo Jin Yoon, Ye Seul Kim
  • Publication number: 20180135809
    Abstract: A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; at least one groove disposed on a side surface of the mesa forming a concave region; an extension electrode forming ohmic contact with the first conductive type semiconductor layer in the concave region; an insulation layer covering the extension electrode, the first conductive type semiconductor layer, and the mesa, and including at least one first opening exposing the extension electrode and a second opening; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening.
    Type: Application
    Filed: December 22, 2017
    Publication date: May 17, 2018
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Sang Won Woo, Ji Hye Kim
  • Patent number: 9929314
    Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
    Type: Grant
    Filed: October 27, 2016
    Date of Patent: March 27, 2018
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Yeo Jin Yoon, Sang Hyun Oh, Keum Ju Lee, Jin Woong Lee, Da Yeon Jeong, Sang Won Woo
  • Patent number: 9865775
    Abstract: The light emitting element is provided to comprise: a first conductive type semiconductor layer; a mesa; a current blocking layer; a transparent electrode; a first electrode pad and a first electrode extension; a second electrode pad and a second electrode extension; and an insulation layer partially located on the lower portion of the first electrode, wherein the mesa includes at least one groove formed on a side thereof, the first conductive type semiconductor layer is partially exposed through the groove, the insulation layer includes an opening through which the exposed first conductive type semiconductor layer is at least partially exposed, the first electrode extension includes extension contact portions in contact with the first conductive type semiconductor layer through an opening, and the second electrode extension includes an end with a width different from the average width of the second electrode extension.
    Type: Grant
    Filed: December 29, 2016
    Date of Patent: January 9, 2018
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Duk Il Suh, Ye Seul Kim, Kyoung Wan Kim, Sang Won Woo, Ji Hye Kim
  • Patent number: 9851056
    Abstract: A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; an insulation layer covering the first conductive type semiconductor layer and the mesa, the insulation layer including at least one first opening exposing the first conductive type semiconductor layer and a second opening disposed on the mesa; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening. The first opening of the insulation layer includes a first region covered by the first pad electrode and a second region exposed outside the first pad electrode.
    Type: Grant
    Filed: November 10, 2016
    Date of Patent: December 26, 2017
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Sang Won Woo, Ji Hye Kim
  • Publication number: 20170200857
    Abstract: A method of fabricating a light emitting diode (LED) includes: sequentially stacking a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate; and separating the substrate into unit chips, and at the same time, forming a concavo-convex structure having the shape of irregular vertical lines in a side surface of the unit chip.
    Type: Application
    Filed: March 24, 2017
    Publication date: July 13, 2017
    Inventors: Kyung Wan KIM, Tae Kyoon KIM, Yeo Jin YOON, Ye Seul KIM, Sang Hyun OH, Jin Woong LEE, In Soo KIM
  • Publication number: 20170125640
    Abstract: A light-emitting element according to an embodiment of the present document has a transparent electrode having an opening, and the transparent electrode has a protrusion on a side surface of the opening. A second electrode pad is arranged on the opening of the transparent electrode, and abuts the protrusion. Accordingly, peeling of the second electrode pad can be prevented, thereby improving the reliability of the light-emitting element.
    Type: Application
    Filed: January 12, 2017
    Publication date: May 4, 2017
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Sang Hyun Oh, Duk Il Suh, Sang Won Woo, Ji Hye Kim
  • Publication number: 20170110629
    Abstract: The light emitting element is provided to comprise: a first conductive type semiconductor layer; a mesa; a current blocking layer; a transparent electrode; a first electrode pad and a first electrode extension; a second electrode pad and a second electrode extension; and an insulation layer partially located on the lower portion of the first electrode, wherein the mesa includes at least one groove formed on a side thereof, the first conductive type semiconductor layer is partially exposed through the groove, the insulation layer includes an opening through which the exposed first conductive type semiconductor layer is at least partially exposed, the first electrode extension includes extension contact portions in contact with the first conductive type semiconductor layer through an opening, and the second electrode extension includes an end with a width different from the average width of the second electrode extension.
    Type: Application
    Filed: December 29, 2016
    Publication date: April 20, 2017
    Inventors: Duk Il Suh, Ye Seul Kim, Kyoung Wan Kim, Sang Won Woo, Ji Hye Kim
  • Publication number: 20170108173
    Abstract: A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; an insulation layer covering the first conductive type semiconductor layer and the mesa, the insulation layer including at least one first opening exposing the first conductive type semiconductor layer and a second opening disposed on the mesa; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening. The first opening of the insulation layer includes a first region covered by the first pad electrode and a second region exposed outside the first pad electrode.
    Type: Application
    Filed: November 10, 2016
    Publication date: April 20, 2017
    Inventors: Ye Seul KIM, Kyoung Wan Kim, Snag Won Woo, Ji Hye Kim
  • Publication number: 20170108937
    Abstract: A light emitting diode chip used in devices includes: a substrate including protrusions disposed on an upper surface; a light emitting structure disposed on the substrate and including at least one hole through a second conductive type semiconductor layer and an active layer and partially exposing a first conductive type semiconductor layer; a contact electrode including an optically transparent conductive oxide; a light reflective insulation layer including a distributed Bragg reflector; a first pad electrode electrically connected to the first conductive type semiconductor layer; and a second pad electrode electrically connected to the contact electrode, wherein a portion of an upper surface of the substrate is exposed around the light emitting structure, the light reflective insulation layer adjoins the exposed portion of the upper surface of the substrate around the light emitting structure, and an upper edge of the substrate is spaced from the light reflective insulation layer.
    Type: Application
    Filed: September 29, 2016
    Publication date: April 20, 2017
    Inventors: Ye Seul KIM, Kyoung Wan KIM, Sang Won WOO, Ji Hye KIM
  • Patent number: 9608165
    Abstract: A method of fabricating a light emitting diode (LED) includes: sequentially stacking a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate; and separating the substrate into unit chips, and at the same time, forming a concavo-convex structure having the shape of irregular vertical lines in a side surface of the unit chip.
    Type: Grant
    Filed: July 9, 2015
    Date of Patent: March 28, 2017
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Kyung Wan Kim, Tae Kyoon Kim, Yeo Jin Yoon, Ye Seul Kim, Sang Hyun Oh, Jin Woong Lee, In Soo Kim
  • Publication number: 20170077355
    Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.
    Type: Application
    Filed: July 25, 2016
    Publication date: March 16, 2017
    Inventors: Jin Woong Lee, Kyoung Wan Kim, Yeo Jin Yoon, Ye Seul Kim
  • Publication number: 20170047483
    Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
    Type: Application
    Filed: October 27, 2016
    Publication date: February 16, 2017
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Yeo Jin Yoon, Sang Hyun Oh, Keum Ju Lee, Jin Woong Lee, Da Yeon Jeong, Sang Won Woo
  • Publication number: 20160380157
    Abstract: A light-emitting diode (LED) includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. The LED includes a first distributed Bragg reflector arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector including a first laminate structure including alternately stacked SiO2 and Nb2O5 layers. The first laminate structure of the first distributed Bragg reflector is configured to reflect at least 90% of a first wavelength range of blue light emitted from the light emitting structure.
    Type: Application
    Filed: September 12, 2016
    Publication date: December 29, 2016
    Inventors: Duk Il SUH, Jae Moo Kim, Kyoung Wan Kim, Yeo Jin Yoon, Ye Seul Kim, Sang Hyun Oh, Jin Woong Lee
  • Patent number: 9520536
    Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
    Type: Grant
    Filed: December 30, 2015
    Date of Patent: December 13, 2016
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Yeo Jin Yoon, Sang Hyun Oh, Keum Ju Lee, Jin Woong Lee, Da Yeon Jeong, Sang Won Woo
  • Patent number: 9401456
    Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.
    Type: Grant
    Filed: June 15, 2015
    Date of Patent: July 26, 2016
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jin Woong Lee, Kyoung Wan Kim, Yeo Jin Yoon, Ye Seul Kim
  • Patent number: 9397264
    Abstract: Disclosed herein in an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad located on the second conductive type semiconductor layer opposite to the second conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
    Type: Grant
    Filed: February 24, 2015
    Date of Patent: July 19, 2016
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Yeo Jin Yoon, Sang Hyun Oh, Keum Ju Lee, Jin Woong Lee, Da Yeon Jeong, Sang Won Woo
  • Publication number: 20160118564
    Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
    Type: Application
    Filed: December 30, 2015
    Publication date: April 28, 2016
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Yeo Jin Yoon, Sang Hyun Oh, Keum Ju Lee, Jin Woong Lee, Da Yeon Jeong, Sang Won Woo
  • Publication number: 20160082815
    Abstract: A gull wing door with a slide door for a vehicle may include a gull wing door including an upper rail, a lower rail, and an intermediate rail in line at an upper end portion, a lower end portion, and an intermediate portion in a horizontal length direction and supported on a vehicle body by a hinge portion positioned at the upper end portion and openable/closable in a vertical direction about the hinge portion, and a slide door including upper and lower portions and an intermediate portion of the gull wing door at an upper end portion and a lower end portion, and a middle portion and openable/closable in a horizontal direction while being supported on the gull wing door by upper and lower rollers and an intermediate roller assembly.
    Type: Application
    Filed: August 14, 2015
    Publication date: March 24, 2016
    Applicant: Hyundai Motor Company
    Inventors: Ju Hyuck LEE, Ja Yong KOO, Ye Seul KIM, Yong Seok JANG, Hui Jung KIM, Min Su KANG, Seung Jun LEE