Patents by Inventor Ye Seul Kim

Ye Seul Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190371990
    Abstract: A light emitting diode including an n-type semiconductor layer, a mesa disposed on the n-type semiconductor layer and exposing a portion thereof, and including an active layer and a p-type semiconductor layer, first and second bonding pads electrically connected to the n-type and p-type semiconductor layers, respectively, and a first insulation layer at least partially disposed between the exposed portion of the n-type semiconductor layer exposed by the mesa and the second bonding pad, in which the exposed portion of the n-type semiconductor layer has a first portion having a shortest distance to the second bonding pad, the first insulation layer covers a portion of the p-type semiconductor layer disposed between the second bonding pad and the first portion of the n-type semiconductor layer, and the first insulation layer is disposed along an edge of the p-type semiconductor layer adjacent to the exposed portion of the n-type semiconductor layer.
    Type: Application
    Filed: May 30, 2019
    Publication date: December 5, 2019
    Inventors: San Won WOO, Ye Seul KIM, Tae Jun PARK, Duk Il SUH
  • Publication number: 20190371967
    Abstract: A light emitting diode chip including a light emitting structure and a distributed Bragg reflector (DBR) disposed thereon to reflect light, the DBR includes alternatively stacked first material layers having a low refractive index and second material layers having a high refractive index, and, with respect to a peak wavelength ? of light emitted, the DBR includes a first region having pairs of the first and second material layers each having an optical thickness greater than 0.25? and less than 0.3?, a last pair of the first and second material layers disposed farthest from the light emitting structure, and a second region between the first region and the last pair, each of the material layers in the second region has an optical thickness less than 0.25?, and the first material layers have a greater optical thickness deviation than that of the second material layers in the second region.
    Type: Application
    Filed: May 30, 2019
    Publication date: December 5, 2019
    Inventors: Ye Seul Kim, Kyoung Wan Kim
  • Patent number: 10359153
    Abstract: A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; at least one groove disposed on a side surface of the mesa forming a concave region; an extension electrode forming ohmic contact with the first conductive type semiconductor layer in the concave region; an insulation layer covering the extension electrode, the first conductive type semiconductor layer, and the mesa, and including at least one first opening exposing the extension electrode and a second opening; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening.
    Type: Grant
    Filed: October 22, 2018
    Date of Patent: July 23, 2019
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Sang Won Woo, Ji Hye Kim
  • Patent number: 10340418
    Abstract: Described herein is a highly efficient light emitting device.
    Type: Grant
    Filed: January 8, 2018
    Date of Patent: July 2, 2019
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Ji Hye Kim, Sang Won Woo
  • Publication number: 20190165208
    Abstract: A light emitting diode includes a current blocking layer interposed between a first connection pad and a first conductivity type semiconductor layer to improve efficiency in spreading of electric current supplied to the first conductivity type semiconductor layer.
    Type: Application
    Filed: February 1, 2019
    Publication date: May 30, 2019
    Inventors: Ji Hye KIM, Kyoung Wan KIM, Ye Seul KIM
  • Publication number: 20190123244
    Abstract: A light-emitting element according to an embodiment of the present document has a transparent electrode having an opening, and the transparent electrode has a protrusion on a side surface of the opening. A second electrode pad is arranged on the opening of the transparent electrode, and abuts the protrusion. Accordingly, peeling of the second electrode pad can be prevented, thereby improving the reliability of the light-emitting element.
    Type: Application
    Filed: December 12, 2018
    Publication date: April 25, 2019
    Inventors: Ye Seul KIM, Kyoung Wan KIM, Sang Hyun OH, Duk Il SUH, Sang Won WOO, Ji Hye KIM
  • Patent number: 10243109
    Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.
    Type: Grant
    Filed: April 27, 2018
    Date of Patent: March 26, 2019
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jin Woong Lee, Kyoung Wan Kim, Yeo Jin Yoon, Ye Seul Kim
  • Publication number: 20190067526
    Abstract: A light emitting diode chip including a light emitting structure having an active layer, and a distributed Bragg reflector (DBR) disposed to reflect light emitted therefrom. The DBR has first and second regions, and a third region therebetween. The first region is closer to the light emitting structure than the second and third regions. The DBR includes first material layers having a high index of refraction and second material layers having a low index of refraction alternately disposed one over another. The first material layers include first, second, and third groups having an optical thickness greater than 0.25?+10%, in a range of 0.25??10% to 0.25?+10%, and less than 0.25??10%, respectively. With respect to a central wavelength (?: 554 nm) of the visible range, the first region has the first and second groups, the second region has the third group, and the third region has the second and third groups.
    Type: Application
    Filed: June 17, 2016
    Publication date: February 28, 2019
    Inventors: Ye Seul KIM, Sang Won WOO, Kyoung Wan KIM
  • Publication number: 20190056070
    Abstract: A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; at least one groove disposed on a side surface of the mesa forming a concave region; an extension electrode forming ohmic contact with the first conductive type semiconductor layer in the concave region; an insulation layer covering the extension electrode, the first conductive type semiconductor layer, and the mesa, and including at least one first opening exposing the extension electrode and a second opening; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening.
    Type: Application
    Filed: October 22, 2018
    Publication date: February 21, 2019
    Inventors: Ye Seul KIM, Kyoung Wan Kim, Sang Won Woo, Ji Hye Kim
  • Patent number: 10186638
    Abstract: A light-emitting element according to an embodiment of the present document has a transparent electrode having an opening, and the transparent electrode has a protrusion on a side surface of the opening. A second electrode pad is arranged on the opening of the transparent electrode, and abuts the protrusion. Accordingly, peeling of the second electrode pad can be prevented, thereby improving the reliability of the light-emitting element.
    Type: Grant
    Filed: January 12, 2017
    Date of Patent: January 22, 2019
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Sang Hyun Oh, Duk Il Suh, Sang Won Woo, Ji Hye Kim
  • Patent number: 10126831
    Abstract: A light emitting diode chip used in devices includes: a substrate including protrusions disposed on an upper surface; a light emitting structure disposed on the substrate and including at least one hole through a second conductive type semiconductor layer and an active layer and partially exposing a first conductive type semiconductor layer; a contact electrode including an optically transparent conductive oxide; a light reflective insulation layer including a distributed Bragg reflector; a first pad electrode electrically connected to the first conductive type semiconductor layer; and a second pad electrode electrically connected to the contact electrode, wherein a portion of an upper surface of the substrate is exposed around the light emitting structure, the light reflective insulation layer adjoins the exposed portion of the upper surface of the substrate around the light emitting structure, and an upper edge of the substrate is spaced from the light reflective insulation layer.
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: November 13, 2018
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Sang Won Woo, Ji Hye Kim
  • Patent number: 10107458
    Abstract: A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; at least one groove disposed on a side surface of the mesa forming a concave region; an extension electrode forming ohmic contact with the first conductive type semiconductor layer in the concave region; an insulation layer covering the extension electrode, the first conductive type semiconductor layer, and the mesa, and including at least one first opening exposing the extension electrode and a second opening; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening.
    Type: Grant
    Filed: December 22, 2017
    Date of Patent: October 23, 2018
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Sang Won Woo, Ji Hye Kim
  • Patent number: 10084112
    Abstract: A method of fabricating a light emitting diode (LED) includes: sequentially stacking a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate; and separating the substrate into unit chips, and at the same time, forming a concavo-convex structure having the shape of irregular vertical lines in a side surface of the unit chip.
    Type: Grant
    Filed: March 24, 2017
    Date of Patent: September 25, 2018
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Kyung Wan Kim, Tae Kyoon Kim, Yeo Jin Yoon, Ye Seul Kim, Sang Hyun Oh, Jin Woong Lee, In Soo Kim
  • Publication number: 20180248081
    Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.
    Type: Application
    Filed: April 27, 2018
    Publication date: August 30, 2018
    Inventors: Jin Woong Lee, Kyoung Wan Kim, Yeo Jin Yoon, Ye Seul Kim
  • Publication number: 20180219130
    Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
    Type: Application
    Filed: March 26, 2018
    Publication date: August 2, 2018
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Yeo Jin Yoon, Sang Hyun Oh, Keum Ju Lee, Jin Woong Lee, Da Yeon Jeong, Sang Won Woo
  • Publication number: 20180198023
    Abstract: Described herein is a highly efficient light emitting device.
    Type: Application
    Filed: January 8, 2018
    Publication date: July 12, 2018
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Ji Hye Kim, Sang Won Woo
  • Publication number: 20180166608
    Abstract: The light emitting element is provided to comprise: a first conductive type semiconductor layer; a mesa; a current blocking layer; a transparent electrode; a first electrode pad and a first electrode extension; a second electrode pad and a second electrode extension; and an insulation layer partially located on the lower portion of the first electrode, wherein the mesa includes at least one groove formed on a side thereof, the first conductive type semiconductor layer is partially exposed through the groove, the insulation layer includes an opening through which the exposed first conductive type semiconductor layer is at least partially exposed, the first electrode extension includes extension contact portions in contact with the first conductive type semiconductor layer through an opening, and the second electrode extension includes an end with a width different from the average width of the second electrode extension.
    Type: Application
    Filed: December 15, 2017
    Publication date: June 14, 2018
    Inventors: Duk Il Suh, Ye Seul Kim, Kyoung Wan Kim, Sang Won Woo, Ji Hye Kim
  • Patent number: 9978910
    Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.
    Type: Grant
    Filed: July 25, 2016
    Date of Patent: May 22, 2018
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Jin Woong Lee, Kyoung Wan Kim, Yeo Jin Yoon, Ye Seul Kim
  • Publication number: 20180135809
    Abstract: A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; at least one groove disposed on a side surface of the mesa forming a concave region; an extension electrode forming ohmic contact with the first conductive type semiconductor layer in the concave region; an insulation layer covering the extension electrode, the first conductive type semiconductor layer, and the mesa, and including at least one first opening exposing the extension electrode and a second opening; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening.
    Type: Application
    Filed: December 22, 2017
    Publication date: May 17, 2018
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Sang Won Woo, Ji Hye Kim
  • Patent number: 9929314
    Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
    Type: Grant
    Filed: October 27, 2016
    Date of Patent: March 27, 2018
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Yeo Jin Yoon, Sang Hyun Oh, Keum Ju Lee, Jin Woong Lee, Da Yeon Jeong, Sang Won Woo