Abstract: A power management system and method for a wireless communication device generates an average desired transmit power signal based on at least one of a received signal strength indicator signal and a power control instruction signal from a base station. A power supply level adjustment signal is generated based on the data parameters of an outgoing data stream and at least one environmental information signal. A combination of the power supply level adjustment signal and the average desired transmit power or a gain control signal and an altered version of the power supply level adjustment signal is used to generate a variable power supply signal that is provided to an output amplifier block for sufficiently generating outgoing wireless device radio signals while reducing power loss in the output amplifier block.

Abstract: Various embodiments described herein relate to a power management block and an amplification block used in the transmitter of a communication subsystem. The power management block provides improved control for the gain control signal provided to a pre-amplifier and the supply voltage provided to a power amplifier which are both in the amplification block. The power expended by the power amplifier is optimized by employing a continuous control method in which one or more feedback loops are employed to take into account various characteristics of the transmitter components and control values.

Abstract: Various embodiments described herein relate to a power management block and an amplification block used in the transmitter of a communication subsystem. The power management block provides improved control for the gain control signal provided to a pre-amplifier and the supply voltage provided to a power amplifier which are both in the amplification block. The power expended by the power amplifier is optimized by employing a continuous control method in which one or more feedback loops are employed to take into account various characteristics of the transmitter components and control values.

Abstract: A pliable handle for a hand-held device is provided. The handle includes a tubular core member, a deformable outer sheath disposed about the tubular core member, a gel disposed between the tubular core member and the outer sheath, and first and second sealers inserted into respective ends of the tubular core member and sealing the gel between the tubular core member and the outer sheath, wherein a force applied to the outer sheath causes load movement of the gel.

Abstract: A method of fabricating a gate structure is provided. First, a sacrificial oxide layer is formed on a substrate. A nitridation treatment process is performed to redistribute the nitrogen atoms in the sacrificial layer and the substrate and produce a concentration profile such that the concentration of nitrogen progressively increases and then decreases toward the substrate with the maximum concentration of nitrogen in the sacrificial oxide layer. Next, the sacrificial oxide layer is removed. A re-oxidation process is performed to produce an interface layer on the surface of the substrate. A high K (dielectric constant) gate dielectric layer, a barrier layer and a metal layer are sequentially formed on the substrate. The metal layer, the barrier layer, the high K gate dielectric layer and the interface layer are defined to form a stacked gate structure.

Abstract: A method of fabricating a dielectric layer is described. A substrate is provided, and a dielectric layer is formed over the substrate. The dielectric layer is performed with a nitridation process. The dielectric layer is performed with a first annealing process. A first gas used in the first annealing process includes inert gas and oxygen. The first gas has a first partial pressure ratio of inert gas to oxygen. The dielectric layer is performed with the second annealing process. A second gas used in the second annealing includes inert gas and oxygen. The second gas has a second partial pressure ratio of inert gas to oxygen, and the second partial pressure ratio is smaller than the first partial pressure ratio. At least one annealing temperature of the two annealing processes is equal to or greater than 950° C. The invention improves uniformity of nitrogen dopants distributed in dielectric layer.

Abstract: A method of fabricating a dielectric layer is described. A substrate is provided, and a dielectric layer is formed over the substrate. The dielectric layer is performed with a nitridation process. The dielectric layer is performed with a first annealing process. A first gas used in the first annealing process includes inert gas and oxygen. The first gas has a first partial pressure ratio of inert gas to oxygen. The dielectric layer is performed with the second annealing process. A second gas used in the second annealing includes inert gas and oxygen. The second gas has a second partial pressure ratio of inert gas to oxygen, and the second partial pressure ratio is smaller than the first partial pressure ratio. At least one annealing temperature of the two annealing processes is equal to or greater than 950° C. The invention improves uniformity of nitrogen dopants distributed in dielectric layer.

Abstract: A method for switching decoupled plasma nitridation (DPN) processes of different doses, which is able to decrease the switching time, is provided. According to the method, a dummy wafer is inserted into a chamber, a process gas introduced is ignited into plasma, and then a DPN doping process of the next dose is performed on the dummy wafer. The nitrogen concentration of the chamber is thus adjusted rapidly to switch to the DPN process of the next dose. In addition, after several cycles of the above steps are repeated, a dummy wafer is inserted into the chamber, and a complete DPN process of the next dose is performed on the dummy wafer. This process is performed several times before switching to the next DPN process.

Abstract: A pre-processing stage is provided for a receiver of a wireless device. The pre-processing stage includes an amplifier that receives signals of interest and unwanted signals and produces amplified signals of interest and amplified unwanted signals, and a matching network that separates the amplified signals of interest from the amplified unwanted signals in conjunction with additional downstream filters. The preprocessing stage also includes a signal path that includes components for receiving and pre-processing the amplified signals of interest, and a shunt path that includes components for adjusting reflected energy sent back to the amplifier for limiting the output swing of the amplifier in a frequency band corresponding to the amplified unwanted signals.

Abstract: A communications subsystem for a wireless device for correcting errors in a reference frequency signal. The communications subsystem comprises a frequency generator for generating the reference frequency signal and a closed loop reference frequency correction module that generates a reference frequency adjustment signal for correcting the reference frequency signal when the communications subsystem operates in closed loop mode. The subsystem further includes an open loop frequency correction means that that samples values of the reference frequency adjustment signal during the closed loop mode and generates a frequency correction signal for correcting the reference frequency signal when the communications subsystem operates in a mode other than closed loop mode.

Abstract: A pliable handle for a hand-held device is provided. The handle includes a tubular core member, a deformable outer sheath disposed about the tubular core member, a gel disposed between the tubular core member and the outer sheath, and first and second sealers inserted into respective ends of the tubular core member and sealing the gel between the tubular core member and the outer sheath, wherein a force applied to the outer sheath causes load movement of the gel.

Abstract: A method for fabricating a semiconductor transistor device having ultra-shallow source/drain extensions is provided. A silicon substrate having thereon a poly gate structure is prepared. The poly gate structure has sidewalls and a top surface. An offset spacer is formed on its sidewall. An ion implantation process is carried out to form an ultra-shallow junction doping region in the silicon substrate next to the offset spacer. An oxide liner is deposited on the offset spacer and on the top surface of the poly gate structure. A tensile nitride spacer layer is then deposited on the oxide liner. A stress modification implantation process is performed to turn the tensile nitride spacer layer into a more compressive status. A dry etching process is then carried out to etch the nitride spacer layer so as to form a spacer.

Abstract: An exhaust adaptor and method which includes attachment of an exhaust bellow or conduit to a process chamber to facilitate vacuum-induced evacuation of residual toxic gases from the chamber during cleaning and/or maintenance of the chamber. A throttle valve of the chamber is first removed from a throttle valve housing, and one end of the exhaust adaptor is next attached to the throttle valve housing. An exhaust bellow or conduit is attached to the opposite end of the adaptor. As a down flow of air is directed into the open chamber, vacuum pressure is induced in the chamber interior through the exhaust bellow or conduit, the adaptor and the valve housing, respectively. Air disturbances in the chamber interior are thus eliminated, and toxic residual gases generated in the chamber interior are therefore incapable of diffusing to the exterior of the chamber.

Abstract: A peak to average power ratio signal is generated from a first mapping function that selects the peak to average power ratio signal that corresponds to the data rate or data format of the signal to be transmitted. The selected peak to average power ratio signal is summed with a desired average transmit power signal. The resulting summation signal is input to a second effectively continuously valued mapping function comprising a table that has a plurality of power amplifier control signal values each with a corresponding peak transmit power. Each peak transmit power signal value results in a power amplifier control signal value that achieves the best possible transmitter power efficiency while still meeting out of band spurious emissions and waveform quality requirements. The summation signal value maps to one of the power amplifier control signal value that is then used to adjust a parameter such as bias of the power amplifier.

Abstract: A method and apparatus for regulating Tx power in a multi-rate mobile device transmitter containing signal dependent gain stages. A data rate and signal format indicator signal corresponding to the transmitted signal, and a desired reference power signal are fed to a mapper that outputs a calibration value based on the desired reference power level at the antenna. The calibration value controls the power amplifier gain characteristics in real time.

Abstract: An exhaust adaptor and method which includes attachment of an exhaust bellow or conduit to a process chamber to facilitate vacuum-induced evacuation of residual toxic gases from the chamber during cleaning and/or maintenance of the chamber. A throttle valve of the chamber is first removed from a throttle valve housing, and one end of the exhaust adaptor is next attached to the throttle valve housing. An exhaust bellow or conduit is attached to the opposite end of the adaptor. As a down flow of air is directed into the open chamber, vacuum pressure is induced in the chamber interior through the exhaust bellow or conduit, the adaptor and the valve housing, respectively. Air disturbances in the chamber interior are thus eliminated, and toxic residual gases generated in the chamber interior are therefore incapable of diffusing to the exterior of the chamber.

Abstract: A perfusion dilatation catheter is disclosed which has an improved distal catheter shaft portion with a tubular member extending within the balloon provided with an expanded coil support incorporated within the wall of the tubular member. The coil is preferably closer to the inner surface than the outer surface of the tubular member. Also disclosed are improved catheter shaft sections in a perfusion portion proximal to the balloon, one with a reinforced inflation tube depending into the guidewire lumen and another having three separate lumens, a central guidewire lumen and a pair of inflation lumens on opposing sides of the tubular structure defining the guidewire lumen.