Patents by Inventor Yen Chan
Yen Chan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20100220636Abstract: A mobile wireless communications device may include an antenna, a wireless radio frequency (RF) receiver, a wireless RF transmitter, and a duplexer connecting the wireless RF receiver and the wireless RF transmitter to the antenna. More particularly, the wireless RF receiver may include a low noise amplifier (LNA) connected to the duplexer, a first receive signal chain for wireless communications signals having a first signal type downstream from the LNA, a second receive signal chain for wireless communications signals having a second signal type different than the first frequency band downstream from the LNA, and a power divider connecting the LNA to the first and second receive signal chains.Type: ApplicationFiled: February 27, 2009Publication date: September 2, 2010Applicant: Research In Motion LimitedInventor: WEN-YEN CHAN
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Publication number: 20100148271Abstract: The present invention relates to a method for gate leakage reduction and Vt shift control, in which a first ion implantation is performed on PMOS region and NMOS region of a substrate to implant fluorine ions, carbon ions, or both in the gate dielectric or the semiconductor substrate, and a second ion implantation is performed only on the NMOS region of the substrate to implant fluorine ions, carbon ions, or both in the gate dielectric or the semiconductor substrate in the NMOS region, with the PMOS region being covered by a mask layer. Thus, the doping concentrations obtained by the PMOS region and the NMOS region are different to compensate the side effect caused by the different equivalent oxide thickness and to avoid the Vt shift.Type: ApplicationFiled: December 17, 2008Publication date: June 17, 2010Inventors: Chien-Liang Lin, Yu-Ren Wang, Wu-Chun Kao, Ying-Hsuan Li, Ying-Wei Yen, Shu-Yen Chan
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Patent number: 7709316Abstract: A method of fabricating a gate structure is provided. First, a sacrificial oxide layer is formed on a substrate. A nitridation treatment process is performed to redistribute the nitrogen atoms in the sacrificial layer and the substrate. Next, the sacrificial oxide layer is removed. A re-oxidation process is performed to produce an interface layer on the surface of the substrate. A high K (dielectric constant) gate dielectric layer, a barrier layer and a metal layer are sequentially formed on the substrate. The metal layer, the barrier layer, the high K gate dielectric layer and the interface layer are defined to form a stacked gate structure.Type: GrantFiled: August 15, 2008Date of Patent: May 4, 2010Assignee: United Microelectronics Corp.Inventors: Yun-Ren Wang, Ying-Wei Yen, Shu-Yen Chan, Kuo-Tai Huang
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Patent number: 7601404Abstract: A method for switching decoupled plasma nitridation (DPN) processes of different doses, which is able to decrease the switching time, is provided. According to the method, a dummy wafer is inserted into a chamber, a process gas introduced is ignited into plasma, and then a DPN doping process of the next dose is performed on the dummy wafer. The nitrogen concentration of the chamber is thus adjusted rapidly to switch to the DPN process of the next dose. In addition, after several cycles of the above steps are repeated, a dummy wafer is inserted into the chamber, and a complete DPN process of the next dose is performed on the dummy wafer. This process is performed several times before switching to the next DPN process.Type: GrantFiled: June 9, 2005Date of Patent: October 13, 2009Assignee: United Microelectronics Corp.Inventors: Ying-Wei Yen, Yun-Ren Wang, Shu-Yen Chan, Chen-Kuo Chiang, Chung-Yih Chen
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Publication number: 20090245419Abstract: A power management system and method for a wireless communication device generates an average desired transmit power signal based on at least one of a received signal strength indicator signal and a power control instruction signal from a base station. A power supply level adjustment signal is generated based on the data parameters of an outgoing data stream and at least one environmental information signal. A combination of the power supply level adjustment signal and the average desired transmit power or a gain control signal and an altered version of the power supply level adjustment signal is used to generate a variable power supply signal that is provided to an output amplifier block for sufficiently generating outgoing wireless device radio signals while reducing power loss in the output amplifier block.Type: ApplicationFiled: June 5, 2009Publication date: October 1, 2009Applicant: RESEARCH IN MOTION LIMITEDInventors: Wen-Yen Chan, Nasserullah Khan, Qingzhong Jiao, Xin Jin, Nagula Tharma Sangary, Michael Franz Habicher
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Publication number: 20090239487Abstract: A method and apparatus for regulating Tx power in a multi-rate mobile device transmitter containing signal dependent gain stages. A data rate and signal format indicator signal corresponding to the transmitted signal, and a desired reference power signal are fed to a mapper that outputs a calibration value based on the desired reference power level at the antenna. The calibration value controls the power amplifier gain characteristics in real time.Type: ApplicationFiled: June 3, 2009Publication date: September 24, 2009Applicant: RESEARCH IN MOTION LIMITEDInventors: Xin Jin, Nagula T. Sangary, M. Khaledul Islam, Wen Zhao, Nasserullah Khan, Wen-Yen Chan, Qing Zhong Jiao
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Patent number: 7558540Abstract: A method and apparatus for regulating Tx power in a multi-rate mobile device transmitter containing signal dependent gain stages. A data rate and signal format indicator signal corresponding to the transmitted signal, and a desired reference power signal are fed to a mapper that outputs a calibration value based on the desired reference power level at the antenna. The calibration value controls the power amplifier gain characteristics in real time.Type: GrantFiled: November 4, 2003Date of Patent: July 7, 2009Assignee: Research In Motion LimitedInventors: Xin Jin, Nagula T. Sangary, M. Khaledul Islam, Wen Zhao, Nasserullah Khan, Wen-Yen Chan, Qing Zhong Jiao
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Publication number: 20090135956Abstract: A communications subsystem for a wireless device for correcting errors in a reference frequency signal. The communications subsystem comprises a frequency generator for generating the reference frequency signal and a closed loop reference frequency correction module that generates a reference frequency adjustment signal for correcting the reference frequency signal when the communications subsystem operates in closed loop mode. The subsystem further includes an open loop frequency correction means that that samples values of the reference frequency adjustment signal during the closed loop mode and generates a frequency correction signal for correcting the reference frequency signal when the communications subsystem operates in a mode other than closed loop mode.Type: ApplicationFiled: January 30, 2009Publication date: May 28, 2009Applicant: RESEARCH IN MOTION LIMITEDInventors: Wen-Yen Chan, Xin Jin, Qingzhong Jiao, Nasserullah Khan, Nagula Tharma Sangary
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Patent number: 7508888Abstract: A communications subsystem for a wireless device for correcting errors in a reference frequency signal. The communications subsystem comprises a frequency generator for generating the reference frequency signal and a closed loop reference frequency correction module that generates a reference frequency adjustment signal for correcting the reference frequency signal when the communications subsystem operates in closed loop mode. The subsystem further includes an open loop frequency correction means that that samples values of the reference frequency adjustment signal during the closed loop mode and generates a frequency correction signal for correcting the reference frequency signal when the communications subsystem operates in a mode other than closed loop mode.Type: GrantFiled: April 28, 2005Date of Patent: March 24, 2009Assignee: Research In Motion LimitedInventors: Wen-Yen Chan, Xin Jin, Qingzhong Jiao, Nasserullah Khan, Nagula Tharma Sangary
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Publication number: 20090076422Abstract: The present invention relates to an acupressure pen and methods of acupressure treatment, wherein said pen is capable of determining the optimal range for treatment on a particular acupoint, and recalling such optimal range during subsequent treatments. Through the use of a grid system, infrared communicator, and microcontroller, the pen is capable of being set and storing results in a matrix.Type: ApplicationFiled: September 17, 2007Publication date: March 19, 2009Applicant: The Hong Kong Polytechnic UniversityInventors: Thomas Kwok Shing Wong, Joanne Wai Yee Chung, Shing Yen Chan, Ka Ho Cheung, Wilson Sin Man Lee, Chung Hang Leung, Ka Lun Fan
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Publication number: 20090074107Abstract: A peak to average power ratio signal is generated from a first mapping function that selects the peak to average power ratio signal that corresponds to the data rate or data format of the signal to be transmitted. The selected peak to average power ratio signal is summed with a desired average transmit power signal. The resulting summation signal is input to a second effectively continuously valued mapping function comprising a table that has a plurality of power amplifier control signal values each with a corresponding peak transmit power. Each peak transmit power signal value results in a power amplifier control signal value that achieves the best possible transmitter power efficiency while still meeting out of band spurious emissions and waveform quality requirements. The summation signal value maps to one of the power amplifier control signal value that is then used to adjust a parameter such as bias of the power amplifier.Type: ApplicationFiled: November 24, 2008Publication date: March 19, 2009Applicant: RESEARCH IN MOTION LIMITEDInventors: Wen-Yen CHAN, Xin JIN, Qing Zhong Jiao
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Patent number: 7471738Abstract: A peak to average power ratio signal is generated from a first mapping function that selects the peak to average power ratio signal that corresponds to the data rate or data format of the signal to be transmitted. The selected peak to average power ratio signal is summed with a desired average transmit power signal. The resulting summation signal is input to a second effectively continuously valued mapping function comprising a table that has a plurality of power amplifier control signal values each with a corresponding peak transmit power. Each peak transmit power signal value results in a power amplifier control signal value that achieves the best possible transmitter power efficiency while still meeting out of band spurious emissions and waveform quality requirements. The summation signal value maps to one of the power amplifier control signal value that is then used to adjust a parameter such as bias of the power amplifier.Type: GrantFiled: December 1, 2003Date of Patent: December 30, 2008Assignee: Research In Motion LimitedInventors: Wen-Yen Chan, Xin Jin, Qing Zhong Jiao
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Publication number: 20080318405Abstract: A method of fabricating a gate structure is provided. First, a sacrificial oxide layer is formed on a substrate. A nitridation treatment process is performed to redistribute the nitrogen atoms in the sacrificial layer and the substrate. Next, the sacrificial oxide layer is removed. A re-oxidation process is performed to produce an interface layer on the surface of the substrate. A high K (dielectric constant) gate dielectric layer, a barrier layer and a metal layer are sequentially formed on the substrate. The metal layer, the barrier layer, the high K gate dielectric layer and the interface layer are defined to form a stacked gate structure.Type: ApplicationFiled: August 15, 2008Publication date: December 25, 2008Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yun-Ren Wang, Ying-Wei Yen, Shu-Yen Chan, Kuo-Tai Huang
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Publication number: 20080318542Abstract: A stage is provided for a receiver of a wireless device. The stage comprises a matching network that separates amplified signals of interest received from an amplifier from amplified unwanted signals received from the amplifier in conjunction with additional downstream filters. The stage also comprises a signal path that comprises components for receiving and processing the amplified signals of interest, and a shunt path that comprises components for adjusting reflected energy sent back to the amplifier for limiting the output swing of the amplifier in a frequency band corresponding to the amplified unwanted signals.Type: ApplicationFiled: August 27, 2008Publication date: December 25, 2008Applicant: RESEARCH IN MOTION LIMITEDInventors: Wen-Yen Chan, Nasserullah Khan
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Publication number: 20080254642Abstract: A method for fabricating gate dielectric layer is provided. First, a sacrificial layer is formed on a substrate. Next, fluorine ions are implanted into the substrate. Then, the sacrificial layer is then removed. Finally, a dielectric layer is formed on the substrate.Type: ApplicationFiled: April 16, 2007Publication date: October 16, 2008Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yun-Ren Wang, Ying-Wei Yen, Chien-Liang Lin, Shu-Yen Chan
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Patent number: 7435640Abstract: A method of fabricating a gate structure is provided. First, a sacrificial oxide layer is formed on a substrate. A nitridation treatment process is performed to redistribute the nitrogen atoms in the sacrificial layer and the substrate and produce a concentration profile such that the concentration of nitrogen progressively increases and then decreases toward the substrate with the maximum concentration of nitrogen in the sacrificial oxide layer. Next, the sacrificial oxide layer is removed. A re-oxidation process is performed to produce an interface layer on the surface of the substrate. A high K (dielectric constant) gate dielectric layer, a barrier layer and a metal layer are sequentially formed on the substrate. The metal layer, the barrier layer, the high K gate dielectric layer and the interface layer are defined to form a stacked gate structure.Type: GrantFiled: November 8, 2005Date of Patent: October 14, 2008Assignee: United Microelectronics Corp.Inventors: Yun-Ren Wang, Ying-Wei Yen, Shu-Yen Chan, Kuo-Tai Huang
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Patent number: 7433666Abstract: A pre-processing stage is provided for a receiver of a wireless device. The pre-processing stage includes an amplifier that receives signals of interest and unwanted signals and produces amplified signals of interest and amplified unwanted signals, and a matching network that separates the amplified signals of interest from the amplified unwanted signals in conjunction with additional downstream filters. The preprocessing stage also includes a signal path that includes components for receiving and pre-processing the amplified signals of interest, and a shunt path that includes components for adjusting reflected energy sent back to the amplifier for limiting the output swing of the amplifier in a frequency band corresponding to the amplified unwanted signals.Type: GrantFiled: May 4, 2005Date of Patent: October 7, 2008Assignee: Research In Motion LimitedInventors: Wen-Yen Chan, Nasserullah Khan
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Publication number: 20080206942Abstract: A method for fabricating strained-silicon transistors is disclosed. First, a semiconductor substrate is provided and a gate structure and a spacer surrounding the gate structure are disposed on the semiconductor substrate. A source/drain region is then formed in the semiconductor substrate around the spacer, and a first rapid thermal annealing process is performed to activate the dopants within the source/drain region. An etching process is performed to form a recess around the gate structure and a selective epitaxial growth process is performed to form an epitaxial layer in the recess. A second rapid thermal annealing process is performed to redefine the distribution of the dopants within the source/drain region and repair the damaged bonds of the dopants.Type: ApplicationFiled: February 26, 2007Publication date: August 28, 2008Inventors: Shyh-Fann Ting, Cheng-Tung Huang, Li-Shian Jeng, Kun-Hsien Lee, Wen-Han Hung, Tzyy-Ming Cheng, Meng-Yi Wu, Tsai-Fu Hsiao, Shu-Yen Chan
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Publication number: 20080157231Abstract: A method of fabricating a gate structure is provided. First, a sacrificial oxide layer is formed on a substrate. A nitridation treatment process is performed to redistribute the nitrogen atoms in the sacrificial layer and the substrate and produce a concentration profile such that the concentration of nitrogen progressively increases and then decreases toward the substrate with the maximum concentration of nitrogen in the sacrificial oxide layer. Next, the sacrificial oxide layer is removed. A re-oxidation process is performed to produce an interface layer on the surface of the substrate. A high K (dielectric constant) gate dielectric layer, a barrier layer and a metal layer are sequentially formed on the substrate. The metal layer, the barrier layer, the high K gate dielectric layer and the interface layer are defined to form a stacked gate structure.Type: ApplicationFiled: March 11, 2008Publication date: July 3, 2008Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yun-Ren Wang, Ying-Wei Yen, Shu-Yen Chan, Kuo-Tai Huang
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Publication number: 20080118001Abstract: A power management system and method for a wireless communication device generates an average desired transmit power signal based on at least one of a received signal strength indicator signal and a power control instruction signal from a base station. A power supply level adjustment signal is generated based on the data parameters of an outgoing data stream and at least one environmental information signal. A combination of the power supply level adjustment signal and the average desired transmit power or a gain control signal and an altered version of the power supply level adjustment signal is used to generate a variable power supply signal that is provided to an output amplifier block for sufficiently generating outgoing wireless device radio signals while reducing power loss in the output amplifier block.Type: ApplicationFiled: February 4, 2008Publication date: May 22, 2008Applicant: RESEARCH IN MOTION LIMITEDInventors: Wen-Yen Chan, Nasserullah Khan, Qingzhong Jiao, Xin Jin, Nagula Sangary, Michael Habicher