Abstract: A method of fabricating a semiconductor structure, in which after an etching process is performed to form at least one recess within a semiconductor beside a gate structure, a thermal treatment is performed on the recess in a gas atmosphere including an inert gas before a silicon-containing epitaxial layer is formed in the recess through an epitaxy growth process.

Abstract: A semiconductor process includes the following steps. A substrate is provided, which includes an isolation structure and an oxide layer. The isolation structure divides the substrate into a first region and a second region. The oxide layer is located on the surface of the first region and the second region. A dry cleaning process is performed to remove the oxide layer. A dielectric layer is formed on the first region and the second region. A wet etching process is performed to remove at least one of the dielectric layers located on the first region and the second region. A semiconductor structure is fabricated by the above semiconductor process.

Abstract: A process for manufacturing a stress-providing structure is applied to the fabrication of a semiconductor device. Firstly, a substrate with a channel structure is provided. A silicon nitride layer is formed over the substrate by chemical vapor deposition in a halogen-containing environment. An etching process is performed to partially remove the silicon nitride layer to expose a portion of a surface of the substrate beside the channel structure. The exposed surface of the substrate is etched to form a recess in the substrate. Then, the substrate is thermally treated at a temperature between 750° C. and 820° C. After the substrate is thermally treated, a stress-providing material is filled in the recess to form a stress-providing structure within the recess. The semiconductor device includes a substrate, a recess and a stress-providing structure. The recess has a round inner surface. The stress-providing structure has a round outer surface.

Abstract: A method of fabricating a semiconductor structure, in which after an etching process is performed to form at least one recess within a semiconductor beside a gate structure, a thermal treatment is performed on the recess in a gas atmosphere including an inert gas before a silicon-containing epitaxial layer is formed in the recess through an epitaxy growth process.

Abstract: Various embodiments described herein relate to a power management block and an amplification block used in the transmitter of a communication subsystem. The power management block provides improved control for the gain control signal provided to a pre-amplifier and the supply voltage provided to a power amplifier which are both in the amplification block. The power expended by the power amplifier is optimized by employing a continuous control method in which one or more feedback loops are employed to take into account various characteristics of the transmitter components and control values.

Abstract: Various embodiments described herein relate to a power management block and an amplification block used in the transmitter of a communication subsystem. The power management block provides improved control for the gain control signal provided to a pre-amplifier and the supply voltage provided to a power amplifier which are both in the amplification block. The power expended by the power amplifier is optimized by employing a continuous control method in which one or more feedback loops are employed to take into account various characteristics of the transmitter components and control values.

Abstract: A power management system and method for a wireless communication device generates an average desired transmit power signal based on at least one of a received signal strength indicator signal and a power control instruction signal from a base station. A power supply level adjustment signal is generated based on the data parameters of an outgoing data stream and at least one environmental information signal. A combination of the power supply level adjustment signal and the average desired transmit power or a gain control signal and an altered version of the power supply level adjustment signal is used to generate a variable power supply signal that is provided to an output amplifier block for sufficiently generating outgoing wireless device radio signals while reducing power loss in the output amplifier block.

Abstract: A semiconductor structure including a substrate and a gate structure disposed on the substrate is disclosed. The gate structure includes a gate dielectric layer disposed on the substrate, a gate material layer disposed on the gate dielectric layer and an outer spacer with a rectangular cross section. The top surface of the outer spacer is lower than the top surface of the gate material layer.

Abstract: The present application discloses a method of generating bone tissue in vivo comprising implanting cells into a human or animal at a location where bone growth is required, wherein the cells have been obtained by the in vitro suspension culture of mesenchymal stem cells attached to microcarriers.

Abstract: A stage is provided for a receiver of a wireless device. The stage comprises a matching network that separates amplified signals of interest received from an amplifier from amplified unwanted signals received from the amplifier in conjunction with additional downstream filters. The stage also comprises a signal path that comprises components for receiving and processing the amplified signals of interest, and a shunt path that comprises components for adjusting reflected energy sent back to the amplifier for limiting the output swing of the amplifier in a frequency band corresponding to the amplified unwanted signals.

Abstract: The invention discloses a method for fabricating a MOS transistor. A substrate having thereon a gate structure is provided. A silicon nitride layer is deposited on the gate structure. A dry etching process is then performed to define a silicon nitride spacer on each sidewall of the gate structure and a recess in a source/drain region on each side of the gate structure. A transitional layer covering the gate structure and the recess is deposited. A pre-epitaxial clean process is performed to remove the transitional layer. The substrate is subjected to a pre-bake process. An epitaxial growth process is performed to grow an embedded SiGe layer in the recess. The disposable silicon nitride spacer is removed.

Abstract: The present invention relates to a method for gate leakage reduction and Vt shift control, in which a first ion implantation is performed on PMOS region and NMOS region of a substrate to implant fluorine ions, carbon ions, or both in the gate dielectric or the semiconductor substrate, and a second ion implantation is performed only on the NMOS region of the substrate to implant fluorine ions, carbon ions, or both in the gate dielectric or the semiconductor substrate in the NMOS region, with the PMOS region being covered by a mask layer. Thus, the doping concentrations obtained by the PMOS region and the NMOS region are different to compensate the side effect caused by the different equivalent oxide thickness and to avoid the Vt shift.

Abstract: A method for manufacturing a printed circuit board includes applying a layer of an ink material onto the substrate, the ink material includes a number of conductive particles contained in a solution, and the substrate is then heated to remove the solution and to sinter or retain the conductive particles on the substrate and to form a conductive metal line on the substrate of the printed circuit board. One or more additional layers of the ink material are applied onto the conductive metal line of the substrate with an electroplating process, or by repeating applying the ink material onto the conductive metal line and heating and retaining the conductive particles on the conductive metal line of the substrate.

Abstract: A mobile wireless communications device may include an antenna, a wireless radio frequency (RF) receiver, a wireless RF transmitter, and a duplexer connecting the wireless RF receiver and the wireless RF transmitter to the antenna. More particularly, the wireless RF receiver may include a low noise amplifier (LNA) connected to the duplexer, a first receive signal chain for wireless communications signals having a first signal type downstream from the LNA, a second receive signal chain for wireless communications signals having a second signal type different than the first frequency band downstream from the LNA, and a power divider connecting the LNA to the first and second receive signal chains.

Abstract: A mobile wireless communications device may include an antenna, a wireless radio frequency (RF) receiver, a wireless RF transmitter, and a duplexer connecting the wireless RF receiver and the wireless RF transmitter to the antenna. More particularly, the wireless RF receiver may include a low noise amplifier (LNA) connected to the duplexer and having first and second differential outputs, a first receive signal chain for wireless communications signals having a first signal type connected to the first differential output of the LNA, and a second receive signal chain for wireless communications signals having a second signal type different than the first signal type connected to the second differential output of the LNA.

Abstract: A stage is provided for a receiver of a wireless device. The stage comprises a matching network that separates amplified signals of interest received from an amplifier from amplified unwanted signals received from the amplifier in conjunction with additional downstream filters. The stage also comprises a signal path that comprises components for receiving and processing the amplified signals of interest, and a shunt path that comprises components for adjusting reflected energy sent back to the amplifier for limiting the output swing of the amplifier in a frequency band corresponding to the amplified unwanted signals.

Abstract: The invention discloses a method for fabricating a MOS transistor. A substrate having thereon a gate structure is provided. A silicon nitride layer is deposited on the gate structure. A dry etching process is then performed to define a silicon nitride spacer on each sidewall of the gate structure and a recess in a source/drain region on each side of the gate structure. A transitional layer covering the gate structure and the recess is deposited. A pre-epitaxial clean process is performed to remove the transitional layer. The substrate is subjected to a pre-bake process. An epitaxial growth process is performed to grow an embedded SiGe layer in the recess. The disposable silicon nitride spacer is removed.

Abstract: Various embodiments described herein relate to a power management block and an amplification block used in the transmitter of a communication subsystem. The power management block provides improved control for the gain control signal provided to a pre-amplifier and the supply voltage provided to a power amplifier which are both in the amplification block. The power expended by the power amplifier is optimized by employing a continuous control method in which one or more feedback loops are employed to take into account various characteristics of the transmitter components and control values.

Abstract: A mobile wireless communications device may include an antenna, a wireless radio frequency (RF) receiver, a wireless RF transmitter, and a duplexer connecting the wireless RF receiver and the wireless RF transmitter to the antenna. More particularly, the wireless RF receiver may include a low noise amplifier (LNA) connected to the duplexer, a first receive signal chain for wireless communications signals having a first signal type downstream from the LNA, a second receive signal chain for wireless communications signals having a second signal type different than the first frequency band downstream from the LNA, and a power divider connecting the LNA to the first and second receive signal chains.

Abstract: Various embodiments described herein relate to a power management block and an amplification block used in the transmitter of a communication subsystem. The power management block provides improved control for the gain control signal provided to a pre-amplifier and the supply voltage provided to a power amplifier which are both in the amplification block. The power expended by the power amplifier is optimized by employing a continuous control method in which one or more feedback loops are employed to take into account various characteristics of the transmitter components and control values.