Abstract: A silicon photonic platform includes a composite substrate with a first photonic platform layer which includes a photonic platform material. A first signal layer covers the first photonic platform layer, has a top surface, and includes the photonic platform material and a first signal material. A photonic platform spectral signal is different from the first signal material spectral signal. The second photonic platform layer has a top surface, covers at least a portion of the top surface of the first signal, and includes the photonic platform material. The second photonic platform layer includes at least one ridge structure, and forms a silicon photonic platform together with the first photonic platform layer.

Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1?a?2, b?1, c?1, and b+c?5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.

Abstract: Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, and wherein the conductive layer is formed over at least one of the following: the first surface of the first dielectric layer and a portion of sidewalls of each of the plurality of via holes, and wherein the conductive layer is configured so as to allow the optical collimator to filter light in a range of wavelengths.

Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers.

Abstract: A display device and a brightness adjustment method thereof are provided. The display device includes multiple light panels and a control circuit. Each light panel includes multiple light-emitting diodes, a driving circuit, and a storage circuit. The driving circuit is used to drive the light-emitting diodes and detect a forward voltage value of at least one light-emitting diode among the light-emitting diodes as a forward voltage value of a corresponding light panel. When a target light panel is used to replace one of the light panels, the control circuit controls forward voltage values of the target light panel and the reference light panel to become consistent.

Abstract: An optical sensing apparatus including: a substrate including a first material; an absorption region including a second material different from the first material; an amplification region formed in the substrate and configured to collect at least a portion of the photo-carriers from the absorption region and to amplify the portion of the photo-carriers; an interface-dopant region formed in the substrate between the absorption region and the amplification region; a buffer layer formed between the absorption region and the interface-dopant region; one or more field-control regions formed between the absorption region and the interface-dopant region and at least partially surrounding the buffer layer; and a buried-dopant region formed in the substrate and separated from the absorption region, where the buried-dopant region is configured to collect at least a portion of the amplified portion of the photo-carriers from the amplification region.

Abstract: Examples described herein relate to programming a memory rule for a home agent, wherein the programming a memory rule for a home agent comprises: receiving at least one memory rule programming and based on a cluster associated with the home agent, configuring a memory rule register using a memory rule programming from among the at least one memory rule programming. In some examples, receiving at least one memory rule programming includes receiving a first memory rule programming and receiving a second memory rule programming. In some examples, a mask is applied to reject the first memory rule programming; and applying the mask to accept the second memory rule programming and program the memory rule for the home agent.

Abstract: Some embodiments are directed towards an image sensor device. A photodetector is disposed in a semiconductor substrate, and a transfer transistor is disposed over photodetector. The transfer transistor includes a transfer gate having a lateral portion extending over a frontside of the semiconductor substrate and a vertical portion extending to a first depth below the frontside of the semiconductor substrate. A gate dielectric separates the lateral portion and the vertical portion from the semiconductor substrate. A backside trench isolation structure extends from a backside of the semiconductor substrate to a second depth below the frontside of the semiconductor substrate. The backside trench isolation structure laterally surrounds the photodetector, and the second depth is less than the first depth such that a lowermost portion of the vertical portion of the transfer transistor has a vertical overlap with an uppermost portion of the backside trench isolation structure.

Abstract: A photonic integrated circuit structure includes a semiconductor substrate. A waveguide is disposed above the semiconductor substrate and has an inclined plane. A mirror coating layer is conformally disposed on the inclined plane. A cladding layer covers the waveguide and the mirror coating layer. A hole is disposed in the semiconductor substrate or the cladding layer, and the hole overlaps the inclined plane in a vertical direction. In addition, an optical fiber is disposed in the hole to receive a reflected light from the mirror coating layer.

Abstract: In some embodiments, the present disclosure relates to an image sensor including a substrate having a first side and a second side opposite the first side; a photodetector region within the substrate; a gate structure on the first side of the substrate over the photodetector region; a deep trench isolation (DTI) structure surrounding the photodetector region and extending from the first side of the substrate to the second side; a doped floating node region within the substrate at the first side and disposed between the gate structure and the DTI structure; and a floating node on the first side of the substrate, contacting a top surface of the DTI structure and overlying the doped floating node region.

Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) chip in which a bond pad structure extends to a columnar structure with a high via density. For example, an interconnect structure is on a frontside of a substrate and comprises a first bond wire, a second bond wire, and bond vias forming the columnar structure. The bond vias extend from the first bond wire to the second bond wire. The bond pad structure is inset into a backside of the substrate, opposite the frontside, and extends to the first bond wire. A projection of the first or second bond wire onto a plane parallel to a top surface of the substrate has a first area, and a projection of the bond vias onto the plane has a second area that is 10% or more of the first area, such that via density is high.

Abstract: An optical sensing apparatus including: a substrate including a first material; an absorption region including a second material different from the first material; an amplification region formed in the substrate and configured to collect at least a portion of the photo-carriers from the absorption region and to amplify the portion of the photo-carriers; an interface-dopant region formed in the substrate between the absorption region and the amplification region; a buffer layer formed between the absorption region and the interface-dopant region; one or more field-control regions formed between the absorption region and the interface-dopant region and at least partially surrounding the buffer layer; and a buried-dopant region formed in the substrate and separated from the absorption region, where the buried-dopant region is configured to collect at least a portion of the amplified portion of the photo-carriers from the amplification region.

Abstract: A physical layer (PHY) is coupled to a serial, differential link that is to include a number of lanes. The PHY includes a transmitter and a receiver to be coupled to each lane of the number of lanes. The transmitter coupled to each lane is configured to embed a clock with data to be transmitted over the lane, and the PHY periodically issues a blocking link state (BLS) request to cause an agent to enter a BLS to hold off link layer flit transmission for a duration. The PHY utilizes the serial, differential link during the duration for a PHY associated task selected from a group including an in-band reset, an entry into low power state, and an entry into partial width state.

Abstract: A physical layer (PHY) is coupled to a serial, differential link that is to include a number of lanes. The PHY includes a transmitter and a receiver to be coupled to each lane of the number of lanes. The transmitter coupled to each lane is configured to embed a clock with data to be transmitted over the lane, and the PHY periodically issues a blocking link state (BLS) request to cause an agent to enter a BLS to hold off link layer flit transmission for a duration. The PHY utilizes the serial, differential link during the duration for a PHY associated task selected from a group including an in-band reset, an entry into low power state, and an entry into partial width state.

Abstract: Systems, apparatus, articles of manufacture, and methods are disclosed for memory access for multi-chiplet system-in-package. Example instructions cause at least one circuit in a system-in-package (SiP) to reserve a region in a memory associated with the SiP for exclusive use by a first die of the SiP apart from a second die of the SiP. For example, the memory is for use by multiple, respective, dies of the SiP.

Abstract: The described positional awareness techniques employing sensory data gathering and analysis hardware with reference to specific example implementations implement improvements in the use of sensors, techniques and hardware design that can enable specific embodiments to find new area to cover by a robot encountering an unexpected obstacle traversing an area in which the robot is performing an area coverage task. The sensory data are gathered from an operational camera and one or more auxiliary sensors.

Abstract: An interface for coupling an agent to a fabric supports a set of coherent interconnect protocols and includes a global channel to communicate control signals to support the interface, a request channel to communicate messages associated with requests to other agents on the fabric, a response channel to communicate responses to other agents on the fabric, and a data channel to couple to communicate messages associated with data transfers to other agents on the fabric, where the data transfers include payload data.

Abstract: Techniques for region-aware memory bandwidth allocation control are described. In an embodiment, an apparatus includes a processing core and control circuitry. The processing core is to execute a plurality of threads. The control circuitry is to control use of memory bandwidth per memory region and per thread.

Abstract: The described positional awareness techniques employing sensory data gathering and analysis hardware with reference to specific example implementations implement improvements in the use of sensors, techniques and hardware design that can enable specific embodiments to find new area to cover by a robot performing an area coverage task of an unexplored area. The sensory data are gathered from an operational camera and one or more auxiliary sensors.

Abstract: Examples described herein relate to processor circuitry to issue a cache coherence message to a central processing unit (CPU) cluster by selection of a target cluster and issuance of the request to the target cluster, wherein the target cluster comprises the cluster or the target cluster is directly connected to the cluster. In some examples, the selected target cluster is associated with a minimum number of die boundary traversals. In some examples, the processor circuitry is to read an address range for the cluster to identify the target cluster using a single range check over memory regions including local and remote clusters. In some examples, issuance of the cache coherence message to a cluster is to cause the cache coherence message to traverse one or more die interconnections to reach the target cluster.