Abstract: In a pattern formation method, a bottom layer is formed over an underlying layer. A middle layer is formed over the bottom layer. A resist pattern is formed over the middle layer. The middle layer is patterned by using the resist pattern as an etching mask. The bottom layer is patterned by using the patterned middle layer. The underlying layer is patterned. The middle layer contains silicon in an amount of 50 wt % or more and an organic material. In one or more of the foregoing and following embodiments, an annealing operation is further performed after the middle layer is formed.

Abstract: A method of manufacturing a semiconductor device is disclosed herein. The method includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. In an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. The third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. The first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator.

Abstract: A series noise absorption circuit, comprises: a differential signal transmission cable and a matching circuit. The differential signal transmission cable is electrically connected to two signal feedlines. The differential signal transmission has a first and second transmission line, the first transmission line and the second transmission line are configured to receive a differential pair of input signals from the two signal feedlines. The matching circuit is connected in series with the second transmission line. The matching circuit is configured to receive a reflective electrical signal from a noise reflection circuit, and match an input impedance corresponding the series noise absorption circuit with a common-mode impedance corresponding the two signal feedlines. A distance between the matching circuit and the noise reflection circuit is a minimal electrical length. The minimal electrical length is associated with a real part and an imaginary part of a matching impedance of the matching circuit.

Abstract: A method includes forming a photoresist layer over a substrate, where the photoresist layer includes a polymer blended with a photo-acid generator (PAG), exposing the photoresist layer to a radiation source, and developing the photoresist layer, resulting in a patterned photoresist layer. The PAG is bonded to one or more polarity-enhancing group (PEG), which is configured to increase a dipole moment of the PAG. The exposing may separate the PAG into a cation and an anion, such that a PEG bonded to the cation and a PEG bonded to the anion each increases a polarity of the cation and the anion, respectively.

Abstract: Manufacturing method includes forming photoresist layer including photoresist composition over substrate. Photoresist composition includes: photoactive compound, polymer, crosslinker. The polymer structure A1, A2, A3 independently C1-C30 aryl, alkyl, cycloalkyl, hydroxylalkyl, alkoxy, alkoxyl alkyl, acetyl, acetylalkyl, carboxyl, alky carboxyl, cycloalkyl carboxyl, hydrocarbon ring, heterocyclic, chain, ring, 3-D structure; R1 is C4-C15 chain, cyclic, 3-D structure alkyl, cycloalkyl, hydroxylalkyl, alkoxy, or alkoxyl alkyl; proportion of x, y, and z in polymer is 0?x/(x+y+z)?1, 0?y/(x+y+z)?1, and 0?z/(x+y+z)?1, x, y, and z all not 0 for same polymer.

Abstract: A noise suppression filter includes a resonator, a ground plane, and a set of differential transmission lines. The set of differential transmission lines includes a first meander line and a second meander line formed in a first circuit layer. The resonator is formed in a second circuit layer and includes a first long arm, a second long arm, and a short arm extended form a same point to form a T-shape. The ground plane is formed in a third circuit layer and is coupled to the first long arm and the second long arm through vias. The first meander line is detoured along the inner sides of the first long arm and the short arm, and the second meander line is detoured along the inner sides of the second long arm and the short arm.

Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Photoresist layer is selectively exposed to radiation, and selectively exposed photoresist layer developed. Photoresist composition includes photoactive compound, crosslinker, copolymer.

Abstract: A method of manufacturing a semiconductor device is disclosed herein. The method includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. In an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. The third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. The first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator.

Abstract: A noise suppression filter includes a resonator, a ground plane, and a set of differential transmission lines. The set of differential transmission lines includes a first meander line and a second meander line formed in a first circuit layer. The resonator is formed in a second circuit layer and includes a first long arm, a second long arm, and a short arm extended form a same point to form a T-shape. The ground plane is formed in a third circuit layer and is coupled to the first long arm and the second long arm through vias. The first meander line is detoured along the inner sides of the first long arm and the short arm, and the second meander line is detoured along the inner sides of the second long arm and the short arm.

Abstract: Resist materials having enhanced sensitivity to radiation are disclosed herein, along with methods for lithography patterning that implement such resist materials. An exemplary resist material includes a polymer, a sensitizer, and a photo-acid generator (PAG). The sensitizer is configured to generate a secondary radiation in response to the radiation. The PAG is configured to generate acid in response to the radiation and the secondary radiation. The PAG includes a sulfonium cation having a first phenyl ring and a second phenyl ring, where the first phenyl ring is chemically bonded to the second phenyl ring.

Abstract: A method for examining differential pair transmission lines, performed by a processor, comprising: capturing a plurality of first insertion losses of a first signal line within a frequency range and a plurality of second insertion losses of a second signal line within the frequency range, wherein the first signal line and the second signal line are configured to transmit a pair of differential signals; calculating a plurality of maximum error ratios between the first insertion losses and the second insertion losses within the frequency range; determining whether any one of the maximum error ratios is greater than or equal to an upper threshold; outputting a warning signal when the processor determines one of the maximum error ratios is greater than or equal to the upper threshold; and ending the method when the processor determines each one of the maximum error ratios is smaller than the upper threshold.

Abstract: A circuit device includes a positive phase signal line, a negative phase signal line and a single-ended signal line. The positive phase signal line includes a first positive-phase-signal-line terminal and a second positive-phase-signal-line terminal for transmitting a first signal. The negative phase signal line includes a first negative-phase-signal-line terminal and a second negative-phase-signal-line terminal for transmitting a second signal. The single-ended signal line is disposed between the positive phase signal line and the negative phase signal line, and includes a first single-ended signal line terminal and a second single-ended signal line terminal for transmitting a single-ended signal. The first signal of the positive phase signal line causes a first noise on the single-ended signal line. The second signal of the negative phase signal line causes a second noise on the single-ended signal line. The first noise and the second noise eliminate one another.

Abstract: The present disclosure relates to a microfluidic-based analyzer, including a drive module and a microfluidic disc. On the microfluidic disk, a capillary is connected between a mixing chamber and a waste chamber. More particularly, the capillary is connected to the mixing chamber through a first access on the first radius of the microfluidic disc, and the capillary is connected to the waste chamber through a second access on the second radius of the microfluidic disk. Specifically, a turn of the capillary is disposed between the first access and the second access, in which a folding is configured on a third radius of the microfluidic disc. Overall, the aforementioned microfluidic-based analyzer is able to be operated in different rotational speeds and is capable of evacuating the mixing chamber and enhancing the washing efficiency.

Abstract: A noise suppression circuit device includes a baseboard, a decoupling capacitor set, a power bus structure, a band-stop filter unit and an electromagnetic band-gap structure. The decoupling capacitor set is disposed on the baseboard for isolating noise of a first frequency band. The power bus structure is disposed on the baseboard for isolating noise of a second frequency band. The band-stop filter unit is disposed on the baseboard for isolating at least a portion of noise of a third frequency band. The electromagnetic band-gap structure is disposed on the baseboard for isolating noise of a fourth frequency band.

Abstract: A circuit device includes a positive phase signal line, a negative phase signal line and a single-ended signal line. The positive phase signal line includes a first positive-phase-signal-line terminal and a second positive-phase-signal-line terminal for transmitting a first signal. The negative phase signal line includes a first negative-phase-signal-line terminal and a second negative-phase-signal-line terminal for transmitting a second signal. The single-ended signal line is disposed between the positive phase signal line and the negative phase signal line, and includes a first single-ended signal line terminal and a second single-ended signal line terminal for transmitting a single-ended signal. The first signal of the positive phase signal line causes a first noise on the single-ended signal line. The second signal of the negative phase signal line causes a second noise on the single-ended signal line. The first noise and the second noise eliminate one another.

Abstract: In a pattern formation method, a bottom layer is formed over an underlying layer. A middle layer is formed over the bottom layer. A resist pattern is formed over the middle layer. The middle layer is patterned by using the resist pattern as an etching mask. The bottom layer is patterned by using the patterned middle layer. The underlying layer is patterned. The middle layer contains silicon in an amount of 50 wt % or more and an organic material. In one or more of the foregoing and following embodiments, an annealing operation is further performed after the middle layer is formed.

Abstract: Resist materials having enhanced sensitivity to radiation are disclosed herein, along with methods for lithography patterning that implement such resist materials. An exemplary resist material includes a polymer, a sensitizer, and a photo-acid generator (PAG). The sensitizer is configured to generate a secondary radiation in response to the radiation. The PAG is configured to generate acid in response to the radiation and the secondary radiation. The PAG includes a sulfonium cation having a first phenyl ring and a second phenyl ring, where the first phenyl ring is chemically bonded to the second phenyl ring.

Abstract: A method includes forming a photoresist layer over a substrate, where the photoresist layer includes a polymer blended with a photo-acid generator (PAG), exposing the photoresist layer to a radiation source, and developing the photoresist layer, resulting in a patterned photoresist layer. The PAG is bonded to one or more polarity-enhancing group (PEG), which is configured to increase a dipole moment of the PAG. The exposing may separate the PAG into a cation and an anion, such that a PEG bonded to the cation and a PEG bonded to the anion each increases a polarity of the cation and the anion, respectively.

Abstract: Resist materials having enhanced sensitivity to radiation are disclosed herein, along with methods for lithography patterning that implement such resist materials. An exemplary resist material includes a polymer, a sensitizer, and a photo-acid generator (PAG). The sensitizer is configured to generate a secondary radiation in response to the radiation. The PAG is configured to generate acid in response to the radiation and the secondary radiation. The PAG includes a sulfonium cation having a first phenyl ring and a second phenyl ring, where the first phenyl ring is chemically bonded to the second phenyl ring.

Abstract: One of the broader forms of the present disclosure relates to a method of making a semiconductor device. The method includes exposing a photoresist layer to a radiation source and applying a hardening agent to the photoresist layer. Therefore after applying the hardening agent a first portion of the photoresist layer has a higher glass transition temperature, higher mechanical strength, than a second portion of the photoresist layer.