Patents by Inventor Yen-Hsiang Fang

Yen-Hsiang Fang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8604488
    Abstract: A light emitting diode including a GaN substrate, a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first electrode, and a second electrode is provided. The GaN substrate has a first surface and a second surface opposite thereto, and the second surface has a plurality of protuberances, the height of the protuberance is h ?m and the distribution density of the protuberance on the second surface is d cm?2, wherein 9.87×107?h2d, and h?1.8. The first type semiconductor is disposed on the first surface of the GaN substrate. The light emitting layer is disposed on a partial region of the first semiconductor layer, and the wavelength of the light emitted by the light emitting layer is from 375 nm to 415 nm. The second semiconductor layer is disposed on the light emitting layer.
    Type: Grant
    Filed: February 2, 2012
    Date of Patent: December 10, 2013
    Assignee: Industrial Technology Research Institute
    Inventors: Yi-Keng Fu, Ren-Hao Jiang, Yen-Hsiang Fang, Bo-Chun Chen, Chia-Feng Lin
  • Patent number: 8482103
    Abstract: A nitride semiconductor template including a substrate, a mask layer, a first nitride semiconductor layer and a second nitride semiconductor is provided. The substrate has a plurality of trenches, each of the trenches has a bottom surface, a first inclined sidewall and a second inclined sidewall. The mask layer covers the second inclined sidewall and exposes the first inclined sidewall. The first nitride semiconductor layer is disposed over the substrate and the mask layer. The first nitride semiconductor layer fills the trenches and in contact with the first inclined sidewall. The first nitride semiconductor layer has voids located outside the trenches and parts of the mask layer are exposed by the voids. The first nitride semiconductor layer has a plurality of nano-rods. The second nitride semiconductor layer covers the nano-rods. The spaces between the nano-rods are not entirely filled by the second nitride semiconductor layer.
    Type: Grant
    Filed: December 9, 2010
    Date of Patent: July 9, 2013
    Assignee: Industrial Technology Research Institute
    Inventors: Hsun-Chih Liu, Chen-Zi Liao, Yen-Hsiang Fang, Rong Xuan, Chu-Li Chao
  • Publication number: 20130112987
    Abstract: A light emitting diode including a GaN substrate, a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first electrode, and a second electrode is provided. The GaN substrate has a first surface and a second surface opposite thereto, and the second surface has a plurality of protuberances, the height of the protuberance is h ?m and the distribution density of the protuberance on the second surface is d cm?2, wherein 9.87×107?h2d, and h?1.8. The first type semiconductor is disposed on the first surface of the GaN substrate. The light emitting layer is disposed on a partial region of the first semiconductor layer, and the wavelength of the light emitted by the light emitting layer is from 375 nm to 415 nm. The second semiconductor layer is disposed on the light emitting layer.
    Type: Application
    Filed: February 2, 2012
    Publication date: May 9, 2013
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Yi-Keng Fu, Ren-Hao Jiang, Yen-Hsiang Fang, Bo-Chun Chen, Chia-Feng Lin
  • Publication number: 20120161148
    Abstract: A nitride semiconductor substrate and a method for manufacturing the same are provided. The nitride semiconductor substrate includes a base material, a patterned nitride semiconductor, a protection layer, and a nitride semiconductor layer. The patterned nitride semiconductor layer is located on the base material and includes a plurality of nanorod structures and a plurality of block patterns, and an upper surface of the nanorod structures is substantially coplanar with an upper surface of the block patterns. The protection layer covers a side wall of the nanorod structure sand a side wall of the block patterns. The nitride semiconductor layer is located on the patterned nitride semiconductor layer, and a plurality of nanopores are located between the nitride semiconductor layer and the patterned nitride semiconductor layer.
    Type: Application
    Filed: December 19, 2011
    Publication date: June 28, 2012
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Yen-Hsiang Fang, Chu-Li Chao, Chih-Wei Hu, Yih-Der Guo
  • Publication number: 20120153338
    Abstract: A substrate structure is described, including a starting substrate, crystal piers on the starting substrate, and a mask layer. The mask layer covers an upper portion of the sidewall of each crystal pier, is connected between the crystal piers at its bottom, and is separated from the starting substrate by an empty space between the crystal piers. An epitaxial substrate structure is also described, which can be formed by growing an epitaxial layer over the above substrate structure form the crystal piers. The crystal piers may be broken after the epitaxial layer is grown.
    Type: Application
    Filed: December 21, 2010
    Publication date: June 21, 2012
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Yih-Der Guo, Chu-Li Chao, Yen-Hsiang Fang, Ruey-Chyn Yeh, Kun-Fong Lin
  • Publication number: 20120146190
    Abstract: A nitride semiconductor template including a substrate, a mask layer, a first nitride semiconductor layer and a second nitride semiconductor is provided. The substrate has a plurality of trenches, each of the trenches has a bottom surface, a first inclined sidewall and a second inclined sidewall. The mask layer covers the second inclined sidewall and exposes the first inclined sidewall. The first nitride semiconductor layer is disposed over the substrate and the mask layer. The first nitride semiconductor layer fills the trenches and in contact with the first inclined sidewall. The first nitride semiconductor layer has voids located outside the trenches and parts of the mask layer are exposed by the voids. The first nitride semiconductor layer has a plurality of nano-rods. The second nitride semiconductor layer covers the nano-rods. The spaces between the nano-rods are not entirely filled by the second nitride semiconductor layer.
    Type: Application
    Filed: December 9, 2010
    Publication date: June 14, 2012
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Hsun-Chih Liu, Chen-Zi Liao, Yen-Hsiang Fang, Rong Xuan, Chu-Li Chao
  • Patent number: 7838135
    Abstract: A novel heat assisted magnetic recording (HAMR) medium and the fabrication method therefor are provided. The exchange coupling effect occurring at the interface of FePt/CoTb double layers is adopted, and thus the resulting magnetic flux would be sufficient enough to be detected and readout under the room temperature. The provided HAMR medium exhibits a relatively high saturation magnetization and perpendicular coercivity, and thus possesses a great potential for the ultra-high density recording application.
    Type: Grant
    Filed: August 4, 2006
    Date of Patent: November 23, 2010
    Inventors: Po-Cheng Kuo, Yen-Hsiang Fang, An-Cheng Sun, Tao-Hsuan Yang, Chun-Yuan Chou, Ching-Ray Chang
  • Publication number: 20090246362
    Abstract: A novel heat assisted magnetic recording (HAMR) medium and the fabrication method therefor are provided. The exchange coupling effect occurring at the interface of FePt/CoTb double layers is adopted, and thus the resulting magnetic flux would be sufficient enough to be detected and readout under the room temperature. The provided HAMR medium exhibits a relatively high saturation magnetization and perpendicular coercivity, and thus possesses a great potential for the ultra-high density recording application.
    Type: Application
    Filed: June 9, 2009
    Publication date: October 1, 2009
    Inventors: Po-Cheng Kuo, Yen-Hsiang Fang, An-Cheng Sun, Tao-Hsuan Yang, Chun-Yuan Chou, Ching-Ray Chang
  • Publication number: 20090176048
    Abstract: A recording material of Ag1-xSbx (x=10.8˜25.5 at. %) films for WORM optical disk recording media is invented. The thermal analysis shows that the phase change temperature of AgSb film is between 250 and 270?. The optical property analysis shows that all the as deposited films have good optical absorption and high reflectivity. The X-ray Diffraction analysis shows that the as deposited film and the annealed film are kept at ??-AgSb crystalline phase. The TEM analysis shows that the grain size of the Ag80.9Sb19.1 film will grow after annealing. The dynamic test shows that the carrier-to-noise ratio (CNR) of the Ag80.9Sb19.1 optical disc is about 45 dB with ?=657 nm, NA=0.65 and a linear velocity of 3.5 m/s. These Ag1-xSbx films have good optical absorption, high reflectivity and good carrier-to-noise ratio. It can be used as the WORM optical disk recording film.
    Type: Application
    Filed: April 10, 2008
    Publication date: July 9, 2009
    Applicant: CMC Magnetics Corporation
    Inventors: Po-Cheng Kuo, Yen-Hsiang Fang, Po-Wei Chen, Wei-Chih Hsu, Don-Yau Chiang, Wei-Tai Tang, Shih-Hsien Ma
  • Publication number: 20070212573
    Abstract: A novel heat assisted magnetic recording (HAMR) medium and the fabrication method therefor are provided. The exchange coupling effect occurring at the interface of FePt/CoTb double layers is adopted, and thus the resulting magnetic flux would be sufficient enough to be detected and readout under the room temperature. The provided HAMR medium exhibits a relatively high saturation magnetization and perpendicular coercivity, and thus possesses a great potential for the ultra-high density recording application.
    Type: Application
    Filed: August 4, 2006
    Publication date: September 13, 2007
    Inventors: Po-Cheng Kuo, Yen-Hsiang Fang, An-Cheng Sun, Tao-Hsuan Yang, Chun-Yuan Chou, Ching-Ray Chang