Patents by Inventor Yen-Ting Lin

Yen-Ting Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210057570
    Abstract: In an embodiment, a device includes: a fin extending from a substrate; a gate stack over a channel region of the fin; and a source/drain region in the fin adjacent the channel region, the source/drain region including: a first epitaxial layer contacting sidewalls of the fin, the first epitaxial layer including silicon and germanium doped with a dopant, the first epitaxial layer having a first concentration of the dopant; and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer including silicon and germanium doped with the dopant, the second epitaxial layer having a second concentration of the dopant, the second concentration being greater than the first concentration, the first epitaxial layer and the second epitaxial layer having a same germanium concentration.
    Type: Application
    Filed: August 23, 2019
    Publication date: February 25, 2021
    Inventors: Yan-Ting Lin, Hsueh-Chang Sung, Yen-Ru Lee
  • Publication number: 20210050460
    Abstract: A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating wherein the composite etch stop mask layer includes a hydrogen rich layer and a compressive high density layer, and a light filter formed on the composite etch stop mask layer.
    Type: Application
    Filed: April 9, 2020
    Publication date: February 18, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Cheng-Han LIN, Chao-Ching CHANG, Yi-Ming LIN, Yen-Ting CHOU, Yen-Chang CHEN, Sheng-Chan LI, Cheng-Hsien CHOU
  • Publication number: 20210050053
    Abstract: Systems and methods for a bit-cell are presented. The bit-cell comprises a read-port circuit and a write-port circuit. The read-port circuit comprises four transistors, wherein the read-port circuit is activated by a first threshold voltage. The write-port circuit comprises eight transistors, wherein the write-port circuit is activated by a second threshold voltage. The write-port circuit is coupled to the read-port circuit. The first threshold voltage and the second threshold voltage may be different and may be provided by a single supply voltage.
    Type: Application
    Filed: November 3, 2020
    Publication date: February 18, 2021
    Inventors: Mahmut Sinangil, Hung-Jen Liao, Jonathan Tsung-Yung Chang, Yen-Huei Chen, Yen-Ting Lin
  • Publication number: 20210043252
    Abstract: A twelve-transistor (12T) memory cell for a memory device that includes a transmission gate, a cross-coupled inverter circuit operably connected to the transmission gate, and a tri-state inverter operably connected to the cross-coupled inverter circuit. The cross-coupled inverter includes another tri-state inverter cross-coupled to an inverter circuit. Various operations for the 12T memory cell, as well as circuitry to perform the operations, are disclosed.
    Type: Application
    Filed: October 12, 2020
    Publication date: February 11, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Mahmut Sinangil, Yen-Huei Chen, Yen-Ting Lin, Hung-Jen Liao, Jonathan Tsung-Yung Chang
  • Publication number: 20210033818
    Abstract: An optical member driving mechanism is provided. The optical member driving mechanism includes a fixed portion, a movable portion, a driving assembly and a circuit assembly. The fixed portion has a main axis and a polygonal structure surrounding the main axis. The movable portion is configured to connect an optical member, and is movable relative to the fixed portion. The driving assembly drives the movable portion to move relative to the fixed portion. The circuit assembly is electrically connected to the driving assembly.
    Type: Application
    Filed: July 31, 2020
    Publication date: February 4, 2021
    Inventors: Yen-Cheng CHEN, Meng-Ting LIN, Guan-Bo WANG, Sheng-Chang LIN, Sin-Jhong SONG
  • Publication number: 20200388584
    Abstract: A semiconductor structure includes a transceiver, a molding surrounding the transceiver, and a RDL disposed over the transceiver. The RDL includes an antenna and a dielectric layer. The antenna is disposed over and electrically connected to the transceiver. The dielectric layer surrounds the antenna. The antenna includes an elongated portion and a via portion. The elongated portion extends over the molding, and the via portion is electrically connected to the transceiver.
    Type: Application
    Filed: August 25, 2020
    Publication date: December 10, 2020
    Inventors: VINCENT CHEN, HUNG-YI KUO, CHUEI-TANG WANG, HAO-YI TSAI, CHEN-HUA YU, WEI-TING CHEN, MING HUNG TSENG, YEN-LIANG LIN
  • Publication number: 20200375694
    Abstract: The present invention provides an artificial tooth comprising a plurality of internal crown members, a plurality of connecting rods, at least one external crown member, at least one spring clip. The internal crown members are respectively fitted to a plurality of abutments. Each of the connecting rods connects to at least two of the internal crown members. The external crown member has at least one groove therein, and the groove is formed to correspond to the internal crown members. The spring clip clamps a protrusion block formed on the internal crown members or on an adjacent tooth. Further, the spring clip comprises two spring arms opposite each other, and each of two spring arms has a fixed end and a movable end opposite to fixed end. Each of two spring arms connects to the fixed end and the movable end, and fixed end is fixed inside the internal crown members.
    Type: Application
    Filed: May 30, 2019
    Publication date: December 3, 2020
    Inventors: TAI WU LIN, YEN TING LIN
  • Patent number: 10854715
    Abstract: An embodiment is a semiconductor structure. The semiconductor structure includes a fin on a substrate. A gate structure is over the fin. A source/drain is in the fin proximate the gate structure. The source/drain includes a bottom layer, a supportive layer over the bottom layer, and a top layer over the supportive layer. The supportive layer has a different property than the bottom layer and the top layer, such as a different material, a different natural lattice constant, a different dopant concentration, and/or a different alloy percent content.
    Type: Grant
    Filed: April 13, 2018
    Date of Patent: December 1, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jung-Chi Tai, Chii-Horng Li, Pei-Ren Jeng, Yen-Ru Lee, Yan-Ting Lin, Chih-Yun Chin
  • Patent number: 10847214
    Abstract: Systems and methods for a bit-cell are presented. The bit-cell comprises a read-port circuit and a write-port circuit. The read-port circuit comprises four transistors, wherein the read-port circuit is activated by a first threshold voltage. The write-port circuit comprises eight transistors, wherein the write-port circuit is activated by a second threshold voltage. The write-port circuit is coupled to the read-port circuit. The first threshold voltage and the second threshold voltage may be different and may be provided by a single supply voltage.
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: November 24, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Mahmut Sinangil, Hung-Jen Liao, Jonathan Tsung-Yung Chang, Yen-Huei Chen, Yen-Ting Lin
  • Patent number: 10823904
    Abstract: A display device includes at least one display module and a backlight module. The display module includes display units and N driving chips. The N driving chips are arranged along a first direction and electrically connected to the display units. The display units are connected and arranged in N rows in the first direction and M columns in a second direction. N and M are respectively greater than or equal to 1. The backlight module includes a light bar assembly adapted to be disposed below a column of the M columns of the display units farthest from the driving chips, and a length of the light bar assembly corresponds to that of the display units along the first direction. The light bar assembly includes at least one first light bar unit. A length of each first light bar unit is X times the length of each display unit along the first direction, and X is greater than or equal to 1.
    Type: Grant
    Filed: December 24, 2019
    Date of Patent: November 3, 2020
    Assignee: Au Optronics Corporation
    Inventors: Hsiu-Ting Fu, Kun-Hung Hsieh, Chun-Liang Lin, Ren-Wei Huang, Hsin-Chen Lu, Min-Chieh Chen, Chien-Pang Liu, Yen-Ling Chen
  • Patent number: 10803928
    Abstract: A twelve-transistor (12T) memory cell for a memory device that includes a transmission gate, a cross-coupled inverter circuit operably connected to the transmission gate, and a tri-state inverter operably connected to the cross-coupled inverter circuit. The cross-coupled inverter includes another tri-state inverter cross-coupled to an inverter circuit. Various operations for the 12T memory cell, as well as circuitry to perform the operations, are disclosed.
    Type: Grant
    Filed: May 17, 2019
    Date of Patent: October 13, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Mahmut Sinangil, Yen-Huei Chen, Yen-Ting Lin, Hung-Jen Liao, Jonathan Tsung-Yung Chang
  • Patent number: 10790321
    Abstract: The present disclosure relates to a CMOS image sensor, and an associated method of formation. In some embodiments, the CMOS image sensor comprises a floating diffusion region disposed at one side of a transfer gate within a substrate and a photo detecting column disposed at the other side of the transfer gate opposing to the floating diffusion region within the substrate. The photo detecting column comprises a doped sensing layer with a doping type opposite to that of the substrate. The photo detecting column and the substrate are in contact with each other at a junction interface comprising one or more recessed portions. By forming the junction interface with recessed portions, the junction interface is enlarged compared to a previous p-n junction interface without recessed portions, and thus a full well capacity of the photodiode structure is improved.
    Type: Grant
    Filed: June 25, 2018
    Date of Patent: September 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Yu Wei, Hsin-Chi Chen, Kuo-Cheng Lee, Ping-Hao Lin, Hsun-Ying Huang, Yen-Liang Lin, Yu Ting Kao
  • Patent number: 10787078
    Abstract: A touch knob which can transmit user touches above to a touch-sensitive surface below includes a base, a rotating shaft, and a rotating cap. The rotating cap defines a receiving groove facing the base, and the rotating shaft extends into the receiving groove and is connected to the rotating cap. The rotating cap is configured to rotate to transmit user touches in a bounded circular area, at least one conductive touch head is located on the rotating cap and in the receiving groove, and moves as the rotating cap moves. The disclosure avoids the need to cut or form any opening in the cover of the touch-sensitive surface or panel for buttons to be installed. A device using the above touch knob is also provided.
    Type: Grant
    Filed: February 20, 2019
    Date of Patent: September 29, 2020
    Assignees: Interface Technology (ChengDu) Co., Ltd., INTERFACE OPTOELECTRONICS (SHENZHEN) CO., LTD., GENERAL INTERFACE SOLUTION LIMITED
    Inventors: Nai-Hau Shiue, Yen-Heng Huang, Yen-Chang Yao, Li-Chun Hsu, Chih-Chiang Lin, Ya-Ting Chang, Yen-Hsun Chen
  • Publication number: 20200303456
    Abstract: The present disclosure relates to magnetic memory device. The magnetic memory device includes a bottom electrode, a selector layer disposed over the bottom electrode, and a MTJ stack disposed over the selector layer and comprising a reference layer and a free layer disposed over the reference layer and separated from the reference layer by a tunneling barrier layer. The magnetic memory device further includes a modulating layer disposed over the MTJ stack and a top electrode disposed over the switching threshold modulating layer. The modulating layer is configured to reinforce stability of the free layer by magnetically coupled to the free layer.
    Type: Application
    Filed: June 9, 2020
    Publication date: September 24, 2020
    Inventors: Katherine H. Chiang, Chung-Te Lin, Min Cao, Han-Ting Tsai, Pin-Cheng Hsu, Yen-Chung Ho
  • Patent number: 10763229
    Abstract: A semiconductor structure includes a transceiver, a molding surrounding the transceiver, a plurality of vias extending through the molding, and a RDL disposed over the transceiver and the plurality of vias. In some embodiments, the RDL includes an antenna disposed over and electrically connected to the transceiver, and a dielectric layer surrounding the antenna. In some embodiments, the antenna includes an elongated portion extending over the molding and a via portion electrically connected to the transceiver.
    Type: Grant
    Filed: November 8, 2019
    Date of Patent: September 1, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Vincent Chen, Hung-Yi Kuo, Chuei-Tang Wang, Hao-Yi Tsai, Chen-Hua Yu, Wei-Ting Chen, Ming Hung Tseng, Yen-Liang Lin
  • Publication number: 20200274017
    Abstract: An optoelectronic device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type different from the first conductivity type, and a photoelectric conversion region between the first semiconductor region and the second semiconductor region. The photoelectric conversion region is of a third conductivity type the same as the first conductivity type.
    Type: Application
    Filed: February 21, 2020
    Publication date: August 27, 2020
    Inventors: Yun-Chung Na, Yen-Cheng Lu, Yu-Hsuan Liu, Chung-Chih Lin, Tsung-Ting Wu, Szu-Lin Cheng
  • Patent number: 10746595
    Abstract: An ambient-light-sensing hole structure package and a method of manufacturing the same are provided. The ambient-light-sensing hole structure package includes a transparent cover, a decorative layer, a porous structure layer, and an optical adhesive. The transparent cover has a surface. The decorative layer is disposed on the surface and the decorative layer has an opening that exposes a portion of the surface. The porous structure layer is disposed on one side of the decorative layer and the porous structure layer covers the portion of the surface. The porous structure layer includes a plurality of through holes, and the through holes overlap with the opening. The optical adhesive is interposed between the decorative layer and the porous structure layer.
    Type: Grant
    Filed: May 7, 2018
    Date of Patent: August 18, 2020
    Assignees: INTERFACE TECHNOLOGY (CHENGDU) CO., LTD., INTERFACE OPTOELECTRONICS (SHENZHEN) CO., LTD., GENERAL INTERFACE SOLUTION LIMITED
    Inventors: Chun-Hung Chen, Jing-Bing Yu, Tai-Wu Lin, Yen-Chang Yao, Ya-Ting Chang, Pang-Chiang Chia, Yen-Heng Huang
  • Publication number: 20200259050
    Abstract: A micro light emitting device display apparatus including a circuit substrate, a plurality of micro light emitting devices, a first common electrode layer, and a second common electrode layer is provided. The micro light emitting devices are disposed on the circuit substrate and individually include an epitaxial structure and a first-type electrode and a second-type electrode respectively disposed on two side surfaces of the epitaxial structure opposite to each other. The first common electrode layer is disposed on the circuit substrate and directly covers the plurality of first-type electrodes of the micro light emitting devices. The second common electrode layer is disposed between the micro light emitting devices. The first common electrode layer is electrically connected to the second common electrode layer.
    Type: Application
    Filed: April 30, 2020
    Publication date: August 13, 2020
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Chih-Ling Wu, Yen-Yeh Chen, Yi-Min Su, Yi-Chun Shih, Bo-Wei Wu, Yu-Yun Lo, Ying-Ting Lin, Tzu-Yang Lin
  • Publication number: 20200212244
    Abstract: A photodetector includes: a substrate; a first semiconductor region, the first semiconductor region extending into the substrate from a front side of the substrate; and a second semiconductor region, the second semiconductor region further extending into the substrate from a bottom boundary of the first semiconductor region, wherein when the photodetector operates under a Geiger mode, the second semiconductor region is fully depleted to absorb a radiation source received from a back side of the substrate.
    Type: Application
    Filed: March 13, 2020
    Publication date: July 2, 2020
    Inventors: Chia-Yu WEI, Yu-Ting KAO, Yen-Liang LIN, Wen-I HSU, Hsun-Ying HUANG, Kuo-Cheng LEE, Hsin-Chi CHEN
  • Patent number: 10700125
    Abstract: The present disclosure relates to magnetic memory device. The magnetic memory device includes a bottom electrode, a selector layer disposed over the bottom electrode, and a MTJ stack disposed over the selector layer and comprising a reference layer and a free layer disposed over the reference layer and separated from the reference layer by a tunneling barrier layer. The magnetic memory device further includes a modulating layer disposed over the MTJ stack and a top electrode disposed over the switching threshold modulating layer. The selector layer is configured to switch current on and off based on applied bias.
    Type: Grant
    Filed: May 20, 2019
    Date of Patent: June 30, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Katherine H. Chiang, Chung-Te Lin, Min Cao, Han-Ting Tsai, Pin-Cheng Hsu, Yen-Chung Ho