Abstract: A switching control circuit for use in controlling a resonant flyback power converter generates a first driving signal and a second driving signal. The first driving signal is configured to turn on the first transistor to generate a first current to magnetize a transformer and charge a resonant capacitor. The transformer and charge a resonant capacitor are connected in series. The second driving signal is configured to turn on the second transistor to generate a second current to discharge the resonant capacitor. During a power-on period of the resonant flyback power converter, the second driving signal includes a plurality of short-pulses configured to turn on the second transistor for discharging the resonant capacitor. A pulse-width of the short-pulses of the second driving signal is short to an extent that the second current does not exceed a current limit threshold.

Abstract: Microelectromechanical devices and methods of manufacture are presented. Embodiments include bonding a mask substrate to a first microelectromechanical system (MEMS) device. After the bonding has been performed, the mask substrate is patterned. A first conductive pillar is formed within the mask substrate, and a second conductive pillar is formed within the mask substrate, the second conductive pillar having a different height from the first conductive pillar. The mask substrate is then removed.

Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: In various example embodiments, techniques are provided for efficient and reliable anomaly detection and evaluation in a water distribution system (e.g., a smart water distribution system) using both flow and pressure time series data from sensors of the system. The techniques may implement a multi-step workflow that involves decomposing the time series data to remove seasonality and rendering the time series data stationary, detecting outliers of the stationary time series data, classifying sensor events in response to flow or pressure of detected outliers exceeding high or low thresholds for at least a given number of time steps, classifying anomaly events by correlating one or more sensor events related to flow with one or more sensor events related to pressure or by clustering a plurality of sensor events in temporal proximity, and determining a quantitative score for each of the detected anomaly events that indicates a level of significance or importance.

Abstract: The present application relates to the field of semiconductor manufacturing technologies, and in particular to a method and an apparatus for automatically processing wafers. The method for automatically processing the wafers includes the following steps: providing several wafers, wherein the wafers operate on a primary path, and the primary path is a path for forming semiconductor structures on the surfaces of the wafers; determining whether there is a need for detecting defects of the wafers, and if yes, automatically switching an operating path of the wafers to a secondary path; detecting the defects of the wafers in the secondary path; and determining whether the defect detection on the wafers is finished, and if yes, automatically switching the operating path of the wafers to the primary path. The application makes it possible to automatically detect the defects of the wafers with different SWR conditions, thereby improving the automation degree of machines.

Abstract: In an embodiment, a device includes: a semiconductor device; and a redistribution structure including: a first dielectric layer; a first grounding feature on the first dielectric layer; a second grounding feature on the first dielectric layer; a first pair of transmission lines on the first dielectric layer, the first pair of transmission lines being laterally disposed between the first grounding feature and the second grounding feature, the first pair of transmission lines being electrically coupled to the semiconductor device; a second dielectric layer on the first grounding feature, the second grounding feature, and the first pair of transmission lines; and a third grounding feature extending laterally along and through the second dielectric layer, the third grounding feature being physically and electrically coupled to the first grounding feature and the second grounding feature, where the first pair of transmission lines extend continuously along a length of the third grounding feature.

Abstract: An optical film, an optical film set, a backlight module and a display device are provided. The optical film includes a main body, plural first prism structures and plural second prism structures. The main body has a first optical surface and a second optical surface. The first prism structures are disposed on the first optical surface. Each of the first prism structures extends along a first direction. The second prism structures are disposed on the second optical surface. Each of the second prism structures extends along a second direction. The first direction is different from the second direction.

Abstract: A chlorinated polyvinyl chloride resin composition, an extruded sheet and a method for manufacturing the same are provided. The chlorinated polyvinyl chloride resin composition includes a chlorinated polyvinyl chloride resin and a plasticizing processing aid. The chlorinated polyvinyl chloride resin has an amount of 80 parts by weight to 120 parts by weight, a degree of polymerization of from 500 to 1,100, and a chlorine content of from 60% to 75%. The plasticizing processing aid includes a vinyl chloride graft copolymer and an acrylic compound. A grafted functional group of the vinyl chloride graft copolymer is at least one of polyol ester and ethylene vinyl acetate.

Abstract: A resonant flyback power converter includes: a first and a second transistors which form a half-bridge circuit for switching a transformer and a resonant capacitor to generate an output voltage; a current-sense device for sensing a switching current of the half-bridge circuit to generate a current-sense signal; and a switching control circuit generating a first and a second driving signals for controlling the first and the second transistors. The turn-on of the first driving signal controls the half-bridge circuit to generate a positive current to magnetize the transformer and charge the resonant capacitor. The turn-on of the second driving signal controls the half-bridge circuit to generate a negative current to discharge the resonant capacitor. The switching control circuit turns off the first transistor when the positive current exceeds a positive-over-current threshold, and/or, turns off the second transistor when the negative current exceeds a negative-over-current threshold.

Abstract: A composition and a manufacturing method of a highly flame-retardant and low-smoke injection-molded polyvinyl chloride pipe are provided. The composition includes a polyvinyl chloride resin material, a chlorinated polyvinyl chloride resin material, a flame retardant additive and a carbon forming additive. A first number-average degree of polymerization (DPn) of the polyvinyl chloride resin material is between 600 and 1,000. A second number-average degree of polymerization of the chlorinated polyvinyl chloride resin material is between 600 and 800. A difference between the first number-average degree of polymerization and the second number-average degree of polymerization is within 400. The flame retardant additive is a phosphorus-containing flame retardant modified by a modifier. A total added amount of the flame retardant additive and the carbon forming additive in the composition is not greater than 3 PHR.

Abstract: A resonant flyback power converter includes: a first transistor and a second transistor which are configured to switch a transformer and a resonant capacitor for generating an output voltage; and a switching control circuit generating first and second driving signals for controlling the first and the second transistors. The turn-on of the first driving signal magnetizes the transformer. The second driving signal includes a resonant pulse having a resonant pulse width and a ZVS pulse during the DCM operation. The resonant pulse is configured to demagnetize the transformer. The resonant pulse has a first minimum resonant period for a first level of the output load and a second minimum resonant period for a second level of the output load. The first level is higher than the second level and the second minimum resonant period is shorter than the first minimum resonant period.

Abstract: A semiconductor chip and a manufacturing method thereof are provided. The semiconductor chip includes: an array of pillar structures, disposed on a front surface of the semiconductor chip, and respectively including a ground pillar and multiple working pillars laterally spaced apart from and substantially parallel with a line portion of the ground pillar; and dummy pillar structures, disposed on the front surface of the semiconductor chip and laterally surrounding the pillar structures. Active devices formed inside the semiconductor chip are electrically connected to the working pillar. The ground pillars of the pillar structures and the dummy pillar structures are electrically connected to form a current pathway on the front surface of the semiconductor chip.

Abstract: A composition and a manufacturing method of a highly flame-retardant and low-smoke extruded polyvinyl chloride pipe are provided. The composition includes a polyvinyl chloride resin material, a flame retardant additive and a carbon forming additive. The polyvinyl chloride resin material is in an amount between 10 PHR (parts per hundred resin) and 90 PHR. The flame retardant additive is in an amount between 0.5 PHR and 2.0 PHR, and is a phosphorus-containing flame retardant modified by a modifier. The carbon forming additive is in an amount between 0.2 PHR and 1.0 PHR. The carbon forming additive is at least one material selected from a group consisting of zinc chloride, zinc stearate, calcium stearate, zinc hydroxystannate, anhydrous zinc stannate, zinc phosphate and zirconium phosphate. A total added amount of the flame retardant additive and the carbon forming additive in the composition is not greater than 3 PHR.

Abstract: A probe card and a manufacturing method of a probe card are provided. The probe card includes a probe head, first and second substrates, an insulating component, and an adhesive member. The second substrate is disposed between the probe head and the first substrate, and is disposed on the first substrate. The second substrate faces the first substrate and includes second contacts. The second contacts are electrically connected to first contacts of the first substrate. The insulating component is disposed between the first substrate and the second substrate, and disposed at an outer side of the second contacts. The adhesive member is disposed on the first substrate, arranged on at least a part of the side surface of the second substrate, and disposed at an outer side of the insulating component.

Abstract: A resonant flyback power converter includes: a first transistor and a second transistor which are configured to switch a transformer and a resonant capacitor for generating an output voltage; and a switching control circuit generating first and second driving signals for controlling the first and the second transistors. The turn-on of the first driving signal magnetizes the transformer. During a DCM (discontinuous conduction mode) operation, the second driving signal includes a resonant pulse for demagnetizing the transformer and a ZVS (zero voltage switching) pulse for achieving ZVS of the first transistor. The resonant pulse is skipped when the output voltage is lower than a low-voltage threshold.

Abstract: A PVC resin composition and a method for manufacturing a pipe having high heat resistance and transparency are provided. The PVC resin composition includes 100 phr of a PVC resin, 0.5 phr to 5 phr of a modifier, and 1 phr to 10 phr of a heat resistance improving agent. A degree of polymerization of the PVC resin is from 800 to 1,350. The modifier is a polymer containing a first monomer and a second monomer. The first monomer is ethylene or a derivative of the ethylene, and the second monomer is a polyester.

Abstract: In an embodiment, a structure includes a core substrate, a redistribution structure coupled, the redistribution structure including a plurality of redistribution layers, the plurality of redistribution layers comprising a dielectric layer and a metallization layer, a first local interconnect component embedded in a first redistribution layer of the plurality of redistribution layers, the first local interconnect component comprising conductive connectors, the conductive connectors being bonded to a metallization pattern of the first redistribution layer, the dielectric layer of the first redistribution layer encapsulating the first local interconnect component, a first integrated circuit die coupled to the redistribution structure, a second integrated circuit die coupled to the redistribution structure, an interconnect structure of the first local interconnect component electrically coupling the first integrated circuit die to the second integrated circuit die, and a set of conductive connectors coupled to a

Abstract: An antenna module includes first to third radiators and a ground radiator. The first radiator includes first and second sections and excites at a first frequency band. An extension direction of the first section, including a feeding end, is not parallel to an extension direction of the second section. The second radiator includes third and fourth sections. The third section extends from an intersection of the first and second sections. The third section excites at a second frequency band. The third radiator is disposed beside the first radiator and away from the second radiator. The ground radiator is disposed on one side of the first, second, and third radiators, and includes a ground end. The fourth section of the second radiator is connected to the third section and the ground radiator. The third radiator is connected to the ground end.

Abstract: A method of fabrication of a multi-gate semiconductor device that includes providing a fin having a plurality of a first type of epitaxial layers and a plurality of a second type of epitaxial layers. The plurality of the second type of epitaxial layers is oxidized in the source/drain region. A first portion of a first layer of the second type of epitaxial layers is removed in a channel region of the fin to form an opening between a first layer of the first type of epitaxial layer and a second layer of the first type of epitaxial layer. A portion of a gate structure is then formed in the opening.

Abstract: An electronic device includes a substrate, an upper conductive layer, and a lower conductive layer. The substrate has a plurality of inner vias and has an upper surface and a lower surface. The upper conductive layer includes an upper ground trace and an upper signal pad disposed on the upper surface. The upper ground trace is electrically connected to the ground vias and has an upper hollow portion exposing a part of the upper surface. The upper signal pad is disposed on the part of the upper surface exposed by the upper hollow portion and electrically connected to the signal via. The lower conductive layer includes a lower ground trace and a lower signal pad disposed on the lower surface. The lower conductive trace is electrically connected to the ground vias and has a lower hollow portion exposing a part of the lower surface. The lower signal pad is disposed on the part of the lower surface exposed by the lower hollow portion and electrically connected to the signal via.