Abstract: The method for detecting mechanical and magnetic features comprises the steps of: aiming a probe of the sensor at a sample; defining several detected points for detection on the sample; detecting one of points and comprising the steps of: approaching the probe to the detected point from a predetermined height; contacting the probe with the detected point and applying a predetermined force on the detected point; making the probe far away from the detected point until to the predetermined height; shifting the probe to the next point for detection and repeating the detection; collecting the data of each of the detected points while the probe rapidly approaches to the points from the predetermined height; using a signal decomposition algorithm to transform the collected data to a plurality of data groups; and choosing a part of the data groups to be as data of feature distributions of the sample.

Abstract: A process of manufacturing an aluminum alloy workpiece includes a preparation step, in which an aluminum alloy sheet, a forming die, and a handling device are prepared; an aging and forming step including a heating substep for heating the aluminum alloy sheet to a first temperature, a transferring substep for transferring the aluminum alloy sheet to the die at a second temperature, and a forming and cooling substep for forming the aluminum alloy sheet into a target shape; and an aging out of forming die step, in which the formed aluminum alloy sheet is removed from the die, is heated to a third temperature, and undergoes another aging treatment to manufacture the aluminum alloy workpiece.

Abstract: An anchored cut-metal gate (CMG) plug, a semiconductor device including the anchored CMG plug and methods of forming the semiconductor device are disclosed herein. The method includes performing a series of etching processes to form a trench through a metal gate electrode, through an isolation region, and into a semiconductor substrate. The trench cuts-through and separates the metal gate electrode into a first metal gate and a second metal gate and forms a recess in the semiconductor substrate. Once the trench has been formed, a dielectric plug material is deposited into the trench to form a CMG plug that is anchored within the recess of the semiconductor substrate and separates the first and second metal gates. As such, the anchored CMG plug provides high levels of resistance to reduce leakage current within the semiconductor device during operation and allowing for improved V-trigger performance of the semiconductor device.

Abstract: An encoded substrate to be filmed by a camera device for generating an image is provided. The encoded substrate includes a plurality of grids arranged in a form of two-dimensional array, wherein each grid includes a first pattern and a second pattern not overlapped with each other. The first pattern corresponds to a first-dimensional encoded value, and the second pattern corresponds to a second-dimensional encoded value. The image is processed by a processor for scanning the plurality of grids. In a first-dimensional direction, the processor outputs a first coordinate according to at least two first patterns corresponding to at least two consecutive grids among the plurality of grids. In a second- dimensional direction, the processor outputs a second coordinate according to at least two second patterns corresponding to at least two consecutive grids among the plurality of grids.

Abstract: A resistor-transistor-logic (RTL) circuit with GaN structure, including a GaN layer, a AlGaN barrier layer on the GaN layer, multiple p-type doped GaN capping layers on the AlGaN barrier layer, wherein parts of the p-type doped GaN capping layers in a high-voltage region and in a low-voltage region convert the underlying GaN layer into gate depletion areas, the GaN layer not covered by the p-type doped GaN capping layers in a resistor region becomes a 2DEG resistor.

Abstract: A carbonate-containing epoxy resin and a manufacturing method for a carbonate-containing epoxy resin, an epoxy curable product and a method for degrading an epoxy curable product are provided. The carbonate-containing epoxy resin includes a structure represented by formula (I) or formula (II). Formula (I) and formula (II) are defined as in the specification.

Abstract: A method for generating reconstruction a reconstructed image is adapted to an input image having a target object. The method comprises converting the input image into a feature map with vectors by an encoder; performing a training procedure according to training images of reference objects to generate feature prototypes associated with the training images and store the feature prototypes to a memory; selecting a part of feature prototypes from the feature prototypes stored in the memory according to similarities between the feature prototypes and the feature vectors; generating a similar feature map according the part of feature prototypes and weights, wherein the weights represents similarities between the part of feature prototypes and the feature vectors; and converting the similar feature map into the reconstructed image by a decoder; wherein the encoder, the decoder and the memory form an auto-encoder.

Abstract: An apparatus includes components, a distributed timebase circuit, an interface and a Time Synchronization Circuit (TSC). The timebase circuit is configured to provide local timebases in physical proximity to the components, and synchronize the local timebases to a global timebase so as to provide a consistent time measurement. The interface is configured to be coupled to one or more devices. Transmissions on the interface are logically divided into a plurality of frames. Time on the interface is defined based on a frame number identifying a particular frame. The TSC is configured to capture a first timestamp based on the frame number corresponding to a point in time on the interface, and to concurrently capture a second timestamp based on a local timebase corresponding to the point in time, wherein the first timestamp and the second timestamp correlate time on the interface to the consistent time measurement.

Abstract: A magnetic distribution detection method includes the steps of providing a magnetic sensor and a sample, selecting a multiple of measuring points on the sample, sensing the measuring points by the magnetic sensor, obtaining a multiple of sense data and a series of the heights of the magnetic sensor from each measuring point, using a signal decomposition algorithm to convert these sense data into data groups, and selecting one of the data groups as the magnetic distribution data of the sample.

Abstract: A semiconductor device includes a substrate; a first fin structure extending along a first lateral direction; a second fin structure extending along the first lateral direction; a first gate structure extending along a second lateral direction and straddles the first fin structure; a second gate structure extending along the second lateral direction and straddles the second fin structure. The semiconductor device further includes a dielectric cut structure that separates the first and second gate structures from each other. The dielectric cut structure extends into the substrate and comprises a first portion and a second portion. A width of the first portion along the second lateral direction increases with increasing depth into the substrate and a width of the second portion along the second lateral direction decreases with increasing depth into the substrate. The second portion is located below the first portion.

Abstract: A method of fabricating a semiconductor device is described. A plurality of semiconductor fins is formed in a first region on a substrate. An isolation region is formed around the plurality of semiconductor fins. Dummy fins are formed extending above the isolation region and laterally adjacent the plurality of semiconductor fins. A first etch is performed to etch the plurality of semiconductor fins such that a top surface of the plurality of semiconductor fins has a same height as a top surface of the isolation region. A second etch is performed selectively etching the isolation region to form a first recess in the isolation region laterally adjacent the semiconductor fins. A third etch is performed selectively etching the plurality of semiconductor fins to remove the plurality of semiconductor fins and to etch a second recess through the isolation region into the semiconductor substrate.

Abstract: A lock bar-on-slide rail style drawer antitipping safety device includes a cabinet body, a top drawer, at least one middle drawer, and at least one bottom drawer. The drawers are each provided with a sliding portion projecting from one side thereof. The cabinet body includes a vertical slide rail slidably mounted at one side that corresponds to the sliding portions. The vertical slide rail includes, in sequence from top to bottom, a first lock bar, a second lock bar, and a third lock bar slidably mounted thereto. Each of the first lock bar and the second lock bar is provided with a stop portion projecting from each of a top end and a bottom end thereof toward the corresponding sliding portion. The stop portions are provided to selectively block the sliding portions so as to prevent the drawers from accidentally sliding out or being opened simultaneously.

Abstract: A shoe accessory of a shoe adaptive for activating a bottom of a foot wearing the shoe is provided. The bottom of the foot has a forefoot, a heel, and an arch between the forefoot and the heel. The shoe accessory includes a main body and a plurality of stimulating elements mounted to the main body. Each of the stimulating elements is movable universally on the main body and is adapted to exert a pressing force on a non-fixed point of the bottom of the foot to stimulate the arch.

Abstract: Disclosed herein is a method for diagnosing a neurological disorder based on at least one magnetic resonance imaging (MRI) image. The method includes identifying brain image regions that contain a respective portion of diffusion index values of at least one diffusion index. For each of the brain image regions, a characteristic parameter based on the respective portion of the diffusion index values is calculated. a diagnoses is then made for the brain using one of predetermined categories of the neurological disorder by performing classification on a combination of the characteristic parameters via a classifier.

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

Abstract: A method of forming a gate structure includes forming an opening through an insulating layer and forming a first work function metal layer in the opening. The method also includes recessing the first work function metal layer into the opening to form a recessed first work function metal layer, and forming a second work function metal layer in the opening and over the first work function metal layer. The second work function metal layer lines and overhangs the recessed first work function metal layer.

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

Abstract: A method of forming a gate structure includes forming an opening through an insulating layer and forming a first work function metal layer in the opening. The method also includes recessing the first work function metal layer into the opening to form a recessed first work function metal layer, and forming a second work function metal layer in the opening and over the first work function metal layer. The second work function metal layer lines and overhangs the recessed first work function metal layer.