Abstract: An annealing apparatus includes: a first chamber including a first gas having a first gas pressure; a second chamber configured to receive a second gas having a second gas pressure; gas inlets; gas vents; heating elements laterally surrounding the first chamber; and a controller configured to perform the steps of: heating the first chamber while keeping a gas pressure difference between the first gas pressure and the second gas pressure is within a tolerance limit; and cooling the first chamber by exchanging the second gas in the second chamber while keeping the gas pressure difference within the tolerance limit, wherein the exchanging of the second gas includes introducing the second gas to the second chamber through the plurality of gas inlets and exhausting a the second gas out of the second chamber through the plurality of gas vents while keeping the second gas pressure unchanged.

Abstract: The present disclosure relates to computer-implemented systems and methods for sharing, managing, and executing computer simulations via a simulation service. In one particular embodiment, the simulation service is stored and executed on a remote computing device wherein the simulation service and remote computing device are configured to interface with client devices or programs. In some instances, input data and configuration parameters may be sent from the client devices or programs to the remote computing device to execute a given computer simulation, and the results may be returned to the client devices or programs as they become available.

Abstract: A method for fabricating semiconductor device includes the steps of first providing a substrate having a first region and a second region, forming a first bottom barrier metal (BBM) layer on the first region and the second region, forming a first work function metal (WFM) layer on the first BBM layer on the first region and the second region, and then forming a diffusion barrier layer on the first WFM layer.

Abstract: A method for fabricating semiconductor device includes the steps of first providing a substrate having a first region and a second region, forming a first bottom barrier metal (BBM) layer on the first region and the second region, forming a first work function metal (WFM) layer on the first BBM layer on the first region and the second region, and then forming a diffusion barrier layer on the first WFM layer.

Abstract: An inverter device includes a converter circuit and a filter. The converter circuit converts a DC input voltage into an AC intermediate voltage based on six control signals, and includes first and second converters. Each of the first and second converters includes three switches, two diodes and a coupled inductor circuit. The switches of the first converter operate respectively based on three of the control signals. The switches of the second converter operate respectively based on the other three of the control signals. The filter filters the AC intermediate voltage to generate an AC output voltage.

Abstract: A vehicle positioning method via data fusion and a system using the same are disclosed. The method is performed in a processor electrically connected to a self-driving-vehicle controller and multiple electronic systems. The method is to perform a delay correction according to a first real-time coordinate, a second real-time coordinate, real-time lane recognition data, multiple vehicle dynamic parameters, and multiple vehicle information received from the multiple electronic systems with their weigh values, to generate a fusion positioning coordinate, and to determine confidence indexes. Then, the method is to output the first real-time coordinate, the second real-time coordinate, and the real-time lane recognition data that are processed by the delay correction, the fusion positioning coordinate, and the confidence indexes to the self-driving-vehicle controller for a self-driving operation.

Abstract: A memory device and an operation method thereof are provided. The memory device includes memory cells, each having a static random access memory (SRAM) cell and a non-volatile memory cell. The SRAM cell is configured to store complementary data at first and second storage nodes. The non-volatile memory cell is configured to replicate and retain the complementary data before the SRAM cell loses power supply, and to rewrite the replicated data to the first and second storage nodes of the SRAM cell after the power supply of the SRAM cell is restored.

Abstract: An endoscope imager includes a system-in-package and a specularly reflective surface. The system-in-package includes (a) a camera module having an imaging lens with an optical axis and (b) an illumination unit. The system-in-package includes (a) a camera module having an imaging lens with an optical axis and (b) an illumination unit configured to emit illumination propagating in a direction away from the imaging lens, the direction having a component parallel to the optical axis. The specularly reflective surface faces the imaging lens and forming an oblique angle with the optical axis, to deflect the illumination toward a scene and deflect light from the scene toward the camera module.

Abstract: Example implementations relate to power supplied to ports based on charge amounts. In some examples, a computing device can include a charge storage device, an I/O port, and a processor, where the processor is to determine a charge amount of the charge storage device and an operating mode of the computing device, and determine an amount of power to be supplied to the I/O port based on the charge amount and the operating mode.

Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

Abstract: A method of forming a semiconductor device includes forming a sacrificial gate structure over a substrate, depositing a spacer layer on the sacrificial gate structure in a conformal manner, performing a multi-step oxidation process to the spacer layer, etching the spacer layer to form gate sidewall spacers on opposite sidewalls of the sacrificial gate structure, removing the sacrificial gate structure to form a trench between the gate sidewalls spacers, and forming a metal gate structure in the trench.

Abstract: A method for manufacturing a semiconductor structure includes forming a fin over a substrate, wherein the fin includes first semiconductor layers and second semiconductor layers alternating stacked. The method also includes forming an isolation feature around the fin, forming a dielectric feature over the isolation feature, forming a cap layer over the fin and the dielectric feature, oxidizing the cap layer to form an oxidized cap layer, forming source/drain features passing through the cap layer and in the fin, removing the second semiconductor layers in the fin to form nanostructures, and forming a gate structure wrapping around the nanostructures.

Abstract: A method for fabricating semiconductor device includes the steps of first providing a substrate having a first region and a second region, forming a first bottom barrier metal (BBM) layer on the first region and the second region, forming a first work function metal (WFM) layer on the first BBM layer on the first region and the second region, and then forming a diffusion barrier layer on the first WFM layer.

Abstract: A video editing method, apparatus and storage medium are provided. The method includes obtaining an object, the object including one or more images; determining a content element of the object for video editing, the content element having a content type identifier; determining a material set identifier corresponding to the content type identifier according to a first behavior tree logic; determining a video editing material set corresponding to the material set identifier; and obtaining an edited video according to the content element and the video editing material set.

Abstract: An example computing device comprises: a media capture device to capture media; a pin coupled to the media capture device to communicate an unlock signal to the media capture device; and a basic input/output system interconnected with the pin, wherein, to control activation of the media capture device, the basic input/output system is to: store an authentication parameter, receive, from the media capture device, an unlock request; in response to the unlock request, verify an authentication input against the authentication parameter, and in response to a successful verification, send the unlock signal to unlock the media capture device via the pin.

Abstract: A first gate and a second gate are formed on a substrate with a gap between the first and second gates. The first gate has a first sidewall. The second gate has a second sidewall directly facing the first sidewall. A first sidewall spacer is disposed on the first sidewall. A second sidewall spacer is disposed on the second sidewall. A contact etch stop layer is deposited on the first and second gates and on the first and second sidewall spacers. The contact etch stop layer is subjected to a tilt-angle plasma etching process to trim a corner portion of the contact etch stop layer. An inter-layer dielectric layer is then deposited on the contact etch stop layer and into the gap.

Abstract: A memory structure includes a substrate. The memory structure further includes a first transistor, wherein the first transistor is a first distance from the substrate. The memory structure further includes a second transistor, wherein the second transistor is a second distance from the substrate, and the first distance is different from the second distance, and a first source/drain (S/D) region of the first transistor is connected to a second S/D region of the second transistor. The memory structure further includes a plurality of storage elements electrically connected to both the first transistor and the second transistor, wherein each of the plurality of storage elements is a third distance from the substrate, and the third distance is different from both the first distance and the second distance.

Abstract: A mouse is provided. The mouse includes a casing, a circuit board, a micro switch base, and a micro switch. The casing includes a button. The circuit board is disposed in the casing. The micro switch base is disposed on the circuit board, and includes a plurality of first openings and a plurality of second openings. The micro switch is fixed on the micro switch base through at least one of the first openings, and electrically connected to the circuit board through the first openings or the second openings.

Abstract: A vehicle positioning method via data fusion and a system using the same are disclosed. The method is performed in a processor electrically connected to a self-driving-vehicle controller and multiple electronic systems. The method is to perform a delay correction according to a first real-time coordinate, a second real-time coordinate, real-time lane recognition data, multiple vehicle dynamic parameters, and multiple vehicle information received from the multiple electronic systems with their weigh values, to generate a fusion positioning coordinate, and to determine confidence indexes. Then, the method is to output the first real-time coordinate, the second real-time coordinate, and the real-time lane recognition data that are processed by the delay correction, the fusion positioning coordinate, and the confidence indexes to the self-driving-vehicle controller for a self-driving operation.