Abstract: A display device and a bezel thereof are provided. The display device includes a display panel and a bezel. The display panel has a first surface and a second surface. The first surface includes at least one pixel pad section, and the second surface includes at least one circuit pad section. The bezel includes a first surface connecting portion, a second surface connecting portion and at least one conductive wire. The edge of the display panel having the pixel pad section and the circuit pad section is accommodated between the first surface connecting portion and the second surface connecting portion. Each conductive wire has a first end and a second end. The first end is disposed on the first surface connecting portion and the second end is disposed on the second surface connecting portion. The part of the first connecting portion having the first end corresponds to the pixel pad section, and the part of the second connecting portion having the second end corresponds to the circuit pad section.

Abstract: A pixel array substrate includes a base, pixel structures, first bonding pads, first wirings, and a first testing element. The pixel structures are disposed on an active area of a first surface of the base. The first bonding pads are disposed on a peripheral region of the first surface. Each of the first wirings is disposed on a corresponding first bonding pad, a first sidewall of the base, and a corresponding second bonding pad. The first testing element is disposed on the active area of the first surface and has a first testing line. The first testing line is electrically connected to at least one of the first bonding pads, and an end of the first testing line is substantially aligned with an edge of the base.

Abstract: A display apparatus includes a substrate and pixels disposed on the substrate. Each of the pixels includes sub-pixels. The substrate has an intermediate region and a peripheral region, where the peripheral region is located between an edge of the substrate and the intermediate region. The pixels include standard pixels disposed in the intermediate region and peripheral pixels disposed in the peripheral region. A color displayed by a sub-pixel of a standard pixel and a color displayed by a sub-pixel of a peripheral pixel are the same, and a distance between a second transistor of the sub-pixel of the standard pixel and a pad of the sub-pixel of the standard pixel is not equal to a distance between a second transistor of the sub-pixel of the peripheral pixel and a pad of the sub-pixel of the peripheral pixel.

Abstract: An E-fuse circuit comprising: an E-fuse group, comprising a plurality of E-fuse sections, wherein each one of the E-fuse sections comprises a plurality of E-fuses; a multi-mode latch circuit, configured to receive an input signal to generate a first output signal in a burn in mode, and configured to receive an address to be compared to generate a second output signal in a normal mode; a first logic circuit group, configured to receive a first part of bits of the first output signal to generate a control signal in the burn in mode; and a second logic circuit group, configured to receive the control signal and a second part of bits of the first output signal to generate a selection signal in the burn in mode, to select which one of the E-fuse sections is activated.

Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

Abstract: A display device includes a substrate and pixels. The substrate has an intermediate region and a peripheral region. Each of the pixels includes sub-pixels. Each of the sub-pixels includes a pad group and a light emitting diode (LED) element. The pad group has a first pad and a second pad. The LED element is electrically connected to the first pad and the second pad. The pixels include standard pixels disposed in the intermediate region and peripheral pixels disposed in the peripheral region. The first pads and the second pads of the pad groups of the sub-pixels of each of the standard pixels are arranged in a first direction. The peripheral pixels include a first peripheral pixel. The first pads and the second pads of the pad groups of the sub-pixels of the first peripheral pixel are arranged in a second direction, and the first direction crosses over the second direction.

Abstract: Wireless piezoelectric accelerometers and systems are provided. A wireless piezoelectric accelerometer may comprise a piezoelectric sensing element configured to sense mechanical acceleration and produce an electrical charge signal in response of the sensed mechanical acceleration, a signal processing module (SPM) configured to convert the electrical charge signal into a voltage signal, and process and digitize the voltage signal, and a wireless module configured to modulate and transmit the digitized voltage signal as wireless signals. The piezoelectric sensing element, the SPM and the wireless module are packaged in a casing. The casing comprises a metallic shielding chamber configured to enclose the piezoelectric sensing element. The casing further comprises a non-metallic portion located in relative to the wireless module to allow transmission of the wireless signals. Corresponding wireless piezoelectric accelerometer systems are also provided.

Abstract: A display apparatus includes pixels, each of which includes first and second pixel driver circuits, first and second driver pads electrically connected to the first and second pixel driver circuits, respectively, a first LED element, first and second connection lines electrically connected to the first and second pixel driver circuits, respectively, and first and second repair pads electrically connected to the first and second connection lines, respectively. A first electrode of the first LED element is electrically connected to the first driver pad. The first repair pad, the second repair pad, the first driver pad, and the second driver pad are structurally separated. A first pixel of the pixels further includes a second LED element overlapping the first and second repair pads of the first pixel, and a first electrode of the second LED element is electrically connected to the second repair pad.

Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

Abstract: A display apparatus includes a substrate and pixels disposed on the substrate. Each of the pixels includes sub-pixels. The substrate has an intermediate region and a peripheral region, where the peripheral region is located between an edge of the substrate and the intermediate region. The pixels include standard pixels disposed in the intermediate region and peripheral pixels disposed in the peripheral region. A color displayed by a sub-pixel of a standard pixel and a color displayed by a sub-pixel of a peripheral pixel are the same, and a distance between a second transistor of the sub-pixel of the standard pixel and a pad of the sub-pixel of the standard pixel is not equal to a distance between a second transistor of the sub-pixel of the peripheral pixel and a pad of the sub-pixel of the peripheral pixel.

Abstract: A moisture barrier film, a moisture barrier device including the same and a method for preparing the moisture barrier device is provided. The moisture barrier film includes a hydrophobic modifying layer adapted to be formed on a substrate. The hydrophobic modifying layer is formed by solidification of a colloidal solution which includes a product obtained by subjecting a first trialkoxysilane having a hydrophobic group to a hydrolysis and condensation reaction with at least one of a second trialkoxysilane having a reactive group or a tetraalkoxysilane to form a polysilsesquioxane mixture, and subjecting the polysilsesquioxane mixture to modification with a metal source.

Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

Abstract: An E-fuse burning circuit comprising: a burning directing circuit, configured to receive first input data comprising first input address and burning directing data, to generate a burning directing signal according to the burning directing data; a ring address latch, configured to latch the first input address responding to a first clock signal, and configured to output second input address responding to the first clock signal; and a control signal generating circuit, configured to generate at least one stop signal to determine whether the data in the ring address latch is shifted or not. The ring address latch applies a first number of the stages when the burning directing signal indicates a row of the E-fuse circuit is to be burned and applies a second number of the stages when the burning directing signal indicates a column of the E-fuse circuit is to be burned.

Abstract: An E-fuse circuit comprising: a ring address latch, configured to receive a first input address arranged in serial i bits responding to a first clock signal, and to output a second input address arranged in serial j bits responding to a second clock signal; a control signal generating circuit, configured to receive the second input address, and to decode the second input address to generate first control signals with m bits and second control signals with n bits, wherein the first control signals and the second control signals are transmitted in parallel, and m, n are factors of j; and an E-fuse group, comprising j fuses. If any one of the first control signals has a first logic value and any one of the second control signals has the logic value, a corresponding fuse the E-fuse group is burned.

Abstract: A method of forming a semiconductor device includes depositing a flowable dielectric layer on a substrate and annealing the flowable dielectric layer. The method further includes performing a high temperature (HT) doping process on the flowable dielectric layer. The HT doping process may include implanting dopant ions into the flowable dielectric layer and heating the substrate during the implanting of the dopant ions. The heating of the substrate may include heating a substrate holder upon which the substrate is disposed and maintaining the substrate at a temperature above 100° C. An example benefit reduced the wet etch rate (WER) of the flowable dielectric layer.

Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics.

Abstract: A method of forming a semiconductor device includes depositing a flowable dielectric layer on a substrate and annealing the flowable dielectric layer. The method further includes performing a high temperature (HT) doping process on the flowable dielectric layer. The HT doping process may include implanting dopant ions into the flowable dielectric layer and heating the substrate during the implanting of the dopant ions. The heating of the substrate may include heating a substrate holder upon which the substrate is disposed and maintaining the substrate at a temperature above 100° C. An example benefit reduced the wet etch rate (WER) of the flowable dielectric layer.