Patents by Inventor Yi-Hsien Chang

Yi-Hsien Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210116413
    Abstract: A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.
    Type: Application
    Filed: December 28, 2020
    Publication date: April 22, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jui-Cheng HUANG, Yi-Hsien CHANG, Chin-Hua WEN, Chun-Ren CHENG, Shih-Fen HUANG, Tung-Tsun CHEN, Yu-Jie HUANG, Ching-Hui LIN, Sean CHENG, Hector CHANG
  • Publication number: 20210115507
    Abstract: An integrated semiconductor device for manipulating and processing bio-entity samples and methods are described. The device includes a lower substrate, at least one optical signal conduit disposed on the lower substrate, at least one cap bonding pad disposed on the lower substrate, a cap configured to form a capped area, and disposed on the at least one cap bonding pad, a fluidic channel, wherein a first side of the fluidic channel is formed on the lower substrate and a second side of the fluidic channel is formed on the cap, a photosensor array coupled to sensor control circuitry, and logic circuitry coupled to the fluidic control circuitry, and the sensor control circuitry.
    Type: Application
    Filed: December 3, 2020
    Publication date: April 22, 2021
    Inventors: Allen Timothy Chang, Yi-Hsien Chang, Chun-Ren Cheng
  • Patent number: 10876997
    Abstract: A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.
    Type: Grant
    Filed: July 27, 2017
    Date of Patent: December 29, 2020
    Inventors: Jui-Cheng Huang, Yi-Hsien Chang, Chin-Hua Wen, Chun-Ren Cheng, Shih-Fen Huang, Tung-Tsun Chen, Yu-Jie Huang, Ching-Hui Lin, Sean Cheng, Hector Chang
  • Patent number: 10865443
    Abstract: An integrated semiconductor device for manipulating and processing bio-entity samples and methods are described. The device includes a lower substrate, at least one optical signal conduit disposed on the lower substrate, at least one cap bonding pad disposed on the lower substrate, a cap configured to form a capped area, and disposed on the at least one cap bonding pad, a fluidic channel, wherein a first side of the fluidic channel is formed on the lower substrate and a second side of the fluidic channel is formed on the cap, a photosensor array coupled to sensor control circuitry, and logic circuitry coupled to the fluidic control circuitry, and the sensor control circuitry.
    Type: Grant
    Filed: May 6, 2019
    Date of Patent: December 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Allen Timothy Chang, Yi-Hsien Chang, Chun-Ren Cheng
  • Publication number: 20200361763
    Abstract: A method of manufacturing a semiconductor structure includes providing a first substrate, disposing and patterning a plate over the first substrate, disposing a first sacrificial oxide layer over the plate, forming a plurality of recesses over a surface of the first sacrificial oxide layer, disposing and patterning a membrane over the first sacrificial oxide layer, disposing a second sacrificial oxide layer to surround the membrane and cover the first sacrificial oxide layer; and forming a plurality of conductive plugs passing through the plate or the membrane, wherein the plate includes a semiconductive member and a tensile member, and the semiconductive member is disposed within the tensile member.
    Type: Application
    Filed: July 30, 2020
    Publication date: November 19, 2020
    Inventors: YI-HSIEN CHANG, CHUN-REN CHENG, WEI-CHENG SHEN, WEN-CHIEN CHEN
  • Patent number: 10829364
    Abstract: A method includes the following operations: forming a piezoelectric substrate including a piezoelectric structure and a conductive contact structure, in which the piezoelectric structure has a conductive layer and a piezoelectric layer in contact with the conductive layer, and the conductive contact structure is electrically connected to the piezoelectric structure and protrudes beyond a principal surface of the piezoelectric substrate; forming a semiconductor substrate having a conductive receiving feature and a semiconductor device electrically connected thereto; aligning the conductive contact structure of the piezoelectric substrate with the conductive receiving feature of the semiconductor substrate; and bonding the piezoelectric substrate with the semiconductor substrate such that the conductive contact structure is in contact with the conductive receiving feature.
    Type: Grant
    Filed: January 3, 2018
    Date of Patent: November 10, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Ren Cheng, Richard Yen, Yi-Hsien Chang, Wei-Cheng Shen
  • Publication number: 20200346926
    Abstract: A method of fabricating a semiconductor structure includes: providing a first wafer; providing a second wafer having a first surface and a second surface opposite to the first surface; contacting the first surface of the second wafer with the first wafer; and forming a plurality of scribe lines on the second surface of the second wafer, wherein the formation of the plurality of scribe lines includes removing portions of the second wafer from the second surface towards the first surface to form a third surface between the first surface and the second surface, and the plurality of scribe lines protrudes from the third surface of the second wafer.
    Type: Application
    Filed: July 17, 2020
    Publication date: November 5, 2020
    Inventors: WEI-CHENG SHEN, YI-HSIEN CHANG, YI-HENG TSAI, CHUN-REN CHENG
  • Patent number: 10737936
    Abstract: A method of fabricating a semiconductor structure includes: providing a first wafer; providing a second wafer having a first surface and a second surface opposite to the first surface; contacting the first surface of the second wafer with the first wafer; and forming a plurality of scribe lines on the second surface of the second wafer; wherein the plurality of scribe lines protrudes from a third surface of the second wafer, and the third surface is between the first surface and the second surface.
    Type: Grant
    Filed: May 31, 2016
    Date of Patent: August 11, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Wei-Cheng Shen, Yi-Hsien Chang, Yi-Heng Tsai, Chun-Ren Cheng
  • Patent number: 10737931
    Abstract: A semiconductor structure includes a first device and a second device. The first device includes a plate including a plurality of apertures; a membrane disposed opposite to the plate and including a plurality of corrugations, and a conductive plug extending through the plate and the membrane. The second device includes a substrate and a bond pad disposed over the substrate, wherein the conductive plug is bonded with the bond pad to integrate the first device with the second device, and the plate includes a semiconductive member and a tensile member, and the semiconductive member is disposed within the tensile member.
    Type: Grant
    Filed: July 31, 2015
    Date of Patent: August 11, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Yi-Hsien Chang, Chun-Ren Cheng, Wei-Cheng Shen, Wen-Chien Chen
  • Publication number: 20200072789
    Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.
    Type: Application
    Filed: November 8, 2019
    Publication date: March 5, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Shao LIU, Chun-Ren Cheng, Ching-Ray Chen, Yi-Hsien Chang, Fei-Lung Lai, Chun-Wen Cheng
  • Publication number: 20200025712
    Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a plurality of micro wells having a sensing gate bottom and a number of stacked well portions. A bottom surface area of a well portion is different from a top surface area of a well portion directly below. The micro wells are formed by multiple etching operations through different materials, including a sacrificial plug, to expose the sensing gate without plasma induced damage.
    Type: Application
    Filed: September 20, 2019
    Publication date: January 23, 2020
    Inventors: Yi-Hsien Chang, Chun-Ren Cheng, Shih-Wei Lin, Yi-Shao Liu
  • Patent number: 10522400
    Abstract: A biosensor with a heater embedded therein is provided. A semiconductor substrate comprises a source region and a drain region. The heater is under the semiconductor substrate. A sensing well is over the semiconductor substrate, laterally between the source region and the drain region. A sensing layer lines the sensing well. A method for manufacturing the biosensor is also provided.
    Type: Grant
    Filed: July 22, 2016
    Date of Patent: December 31, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Alexander Kalnitsky, Yi-Hsien Chang, Chun-Ren Cheng, Jui-Cheng Huang, Shih-Fen Huang, Tung-Tsun Chen, Ching-Hui Lin
  • Patent number: 10502706
    Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a plurality of micro wells having a sensing gate bottom and a number of stacked well portions. A bottom surface area of a well portion is different from a top surface area of a well portion directly below. The micro wells are formed by multiple etching operations through different materials, including a sacrificial plug, to expose the sensing gate without plasma induced damage.
    Type: Grant
    Filed: July 27, 2015
    Date of Patent: December 10, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Hsien Chang, Chun-Ren Cheng, Shih-Wei Lin, Yi-Shao Liu
  • Patent number: 10473616
    Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.
    Type: Grant
    Filed: July 14, 2017
    Date of Patent: November 12, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Shao Liu, Chun-Ren Cheng, Ching-Ray Chen, Yi-Hsien Chang, Fei-Lung Lai, Chun-Wen Cheng
  • Publication number: 20190256347
    Abstract: A method includes forming a recess in a first substrate, bonding a micro-electro-mechanical systems (MEMS) substrate to the first substrate after forming the recess in the first substrate, forming an anti-stiction layer over the micro-electro-mechanical systems (MEMS) substrate, pattering the anti-stiction layer, etching the MEMS substrate to form a MEMS device, and bonding the MEMS device and the first substrate to a second substrate. The patterned anti-stiction layer is between the MEMS device and the second substrate.
    Type: Application
    Filed: April 29, 2019
    Publication date: August 22, 2019
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Hsien CHANG, Tzu-Heng WU, Chun-Ren CHENG, Shih-Wei LIN, Jung-Kuo TU
  • Publication number: 20190256910
    Abstract: An integrated semiconductor device for manipulating and processing bio-entity samples and methods are described. The device includes a lower substrate, at least one optical signal conduit disposed on the lower substrate, at least one cap bonding pad disposed on the lower substrate, a cap configured to form a capped area, and disposed on the at least one cap bonding pad, a fluidic channel, wherein a first side of the fluidic channel is formed on the lower substrate and a second side of the fluidic channel is formed on the cap, a photosensor array coupled to sensor control circuitry, and logic circuitry coupled to the fluidic control circuitry, and the sensor control circuitry.
    Type: Application
    Filed: May 6, 2019
    Publication date: August 22, 2019
    Inventors: Allen Timothy Chang, Yi-Hsien Chang, Chun-Ren Cheng
  • Patent number: 10280456
    Abstract: An integrated semiconductor device for manipulating and processing bio-entity samples and methods are described. The device includes a lower substrate, at least one optical signal conduit disposed on the lower substrate, at least one cap bonding pad disposed on the lower substrate, a cap configured to form a capped area, and disposed on the at least one cap bonding pad, a fluidic channel, wherein a first side of the fluidic channel is formed on the lower substrate and a second side of the fluidic channel is formed on the cap, a photosensor array coupled to sensor control circuitry, and logic circuitry coupled to the fluidic control circuitry, and the sensor control circuitry.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: May 7, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Allen Timothy Chang, Yi-Hsien Chang, Chun-Ren Cheng
  • Patent number: 10273140
    Abstract: A substrate structure for a micro electro mechanical system (MEMS) device, a semiconductor structure and a method for fabricating the same are provided. In various embodiments, the substrate structure for the MEMS device includes a substrate, the MEMS device, and an anti-stiction layer. The MEMS device is over the substrate. The anti-stiction layer is on a surface of the MEMS device, and includes amorphous carbon, polytetrafluoroethene, hafnium oxide, tantalum oxide, zirconium oxide, or a combination thereof.
    Type: Grant
    Filed: January 16, 2015
    Date of Patent: April 30, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Hsien Chang, Tzu-Heng Wu, Chun-Ren Cheng, Shih-Wei Lin, Jung-Kuo Tu
  • Publication number: 20190101531
    Abstract: The present disclosure provides biochips and methods of fabricating biochips. The method includes combining three portions: a transparent substrate, a first substrate with microfluidic channels therein, and a second substrate. Through-holes for inlet and outlet are formed in the transparent substrate or the second substrate. Various non-organic landings with support medium for bio-materials to attach are formed on the first substrate and the second substrate before they are combined. In other embodiments, the microfluidic channel is formed of an adhesion layer between a transparent substrate and a second substrate with landings on the substrates.
    Type: Application
    Filed: December 3, 2018
    Publication date: April 4, 2019
    Inventors: Chia-Hua Chu, Allen Timothy Chang, Ching-Ray Chen, Yi-Hsien Chang, Yi-Shao Liu, Chun-Ren Cheng, Chun-Wen Cheng
  • Publication number: 20190033252
    Abstract: A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.
    Type: Application
    Filed: July 27, 2017
    Publication date: January 31, 2019
    Inventors: Jui-Cheng HUANG, Yi-Hsien CHANG, Chin-Hua WEN, Chun-Ren CHENG, Shih-Fen HUANG, Tung-Tsun CHEN, Yu-Jie HUANG, Ching-Hui LIN, Sean CHENG, Hector CHANG