Abstract: A use of a Lactobacillus reuteri GMNL-263 in decreasing blood lipid levels is disclosed. Lactobacillus reuteri GMNL-263 (accession No.: CCTCC M 209263) specifically inhibits gene expression related to pro-inflammatory factor and lipid synthesis and promotes gene expression related to cholesterol metabolism. Lactobacillus reuteri GMNL-263 is utilized to produce a composition for decreasing blood lipid levels, thereby achieving the aim of hyperlipidemia treatment.

Abstract: Present invention features a novel use of Lactobacillus for treating type 2 diabetes, wherein the Lactobacillus is Lactobacillus reuteri GMNL-89 with the deposition numbers of BCRC 910340 and CCTCC M 207154 and comprises of live, dead bacteria or supernatant of the bacterial culture(s) and a pharmaceutically acceptable vehicle. The invention also discloses the efficacies of the indicated Lactobacillus strain including anti-oxidative enzyme activity, anti-inflammation, reduction of blood glucose level, reduction of triglycerides, reduction of total cholesterol, reduction of LDL, increase of HDL and improve insulin utilization.

Abstract: Present invention features a method for controlling body weight, comprising Lactobacillus reuteri GMNL-263 with the deposition numbers of BCRC 910452 and CCTCC M 209263. Moreover, the invention also relates to a novel use of the composition or the isolated Lactobacillus strain for controlling body weight, whose mechanism is inhibiting biosynthesis of lipids and reducing formation of lipid droplets so as to control body weight.

Abstract: A semiconductor device includes a semiconductor substrate that has a first-type active region and a second-type active region, a dielectric layer over the semiconductor substrate, a first metal layer having a first work function formed over the dielectric layer, the first metal layer being at least partially removed from over the second-type active region, a second metal layer over the first metal layer in the first-type active region and over the dielectric layer in the second-type active region, the second metal layer having a second work function, and a third metal layer over the second metal layer in the first-type active region and over the second metal layer in the second-type active region.

Abstract: Present invention features a novel use of Lactobacillus for treating type 2 diabetes, wherein the Lactobacillus is Lactobacillus reuteri GMNL-89 with the deposition numbers of BCRC 910340 and CCTCC M 207154 and comprises of live, dead bacteria or supernatant of the bacterial culture(s) and a pharmaceutically acceptable vehicle. The invention also discloses the efficacies of the indicated Lactobacillus strain including anti-oxidative enzyme activity, anti-inflammation, reduction of blood glucose level, reduction of triglycerides, reduction of total cholesterol, reduction of LDL, increase of HDL and improve insulin utilization.

Abstract: Present invention features a method for controlling body weight, comprising Lactobacillus reuteri GMNL-263 with the deposition numbers of BCRC 910452 and CCTCC M 209263. Moreover, the invention also relates to a novel use of the composition or the isolated Lactobacillus strain for controlling body weight, whose mechanism is inhibiting biosynthesis of lipids and reducing formation of lipid droplets so as to control body weight.

Abstract: The present invention is related to a Lactobacillus strain, composition and use thereof for treating autoimmune disease and related complications. The composition comprises at least one isolate of Lactobacillus paracasei strain GMNL-32, L. reuteri strain GMNL-89 or L. reuteri strain GMNL-263, and a pharmaceutical carrier, for treating syndromes and related complications of the autoimmune diseases.

Abstract: Provided are methods of patterning metal gate structures including a high-k gate dielectric. In an embodiment, a soluble hard mask layer may be used to provide a masking element to pattern a metal gate. The soluble hard mask layer may be removed from the substrate by water or a photoresist developer. In an embodiment, a hard mask including a high-k dielectric is formed. In a further embodiment, a protection layer is formed underlying a photoresist pattern. The protection layer may protect one or more layers formed on the substrate from a photoresist stripping process.

Abstract: Present invention features a method for controlling body weight, comprising Lactobacillus reuteri GMNL-263 with the deposition numbers of BCRC 910452 and CCTCC M 209263. Moreover, the invention also relates to a novel use of the composition or the isolated Lactobacillus strain for controlling body weight, whose mechanism is inhibiting biosynthesis of lipids and reducing formation of lipid droplets so as to control body weight.

Abstract: The present invention relates to a composition used for treating picornavirus infection comprising at least one of the following bacterial strains: Lactobacillus paracasei GMNL-33 with the deposition numbers of CCTCC M 206133, Lactobacillus reuteri GMNL-89 with the deposition numbers of CCTCC M 207154 and Lactobacillus casei GMNL-277 with the deposition numbers of CCTCC M 2013197, and a pharmaceutically acceptable vehicle. The Lactobacillus casei GMNL-277 of the invention is a novel Lactobacillus isolated strain. In addition, the present invention also features the novel use of the composition of the Lactobacillus strains for treating picornavirus infection, and the mechanism of which is inhibition of virus infection by binding of the probiotic bacteria to viruses.

Abstract: Provided are methods of patterning metal gate structures including a high-k gate dielectric. In an embodiment, a soluble hard mask layer may be used to provide a masking element to pattern a metal gate. The soluble hard mask layer may be removed from the substrate by water or a photoresist developer. In an embodiment, a hard mask including a high-k dielectric is formed. In a further embodiment, a protection layer is formed underlying a photoresist pattern. The protection layer may protect one or more layers formed on the substrate from a photoresist stripping process.

Abstract: A semiconductor device includes a semiconductor substrate that has a first-type active region and a second-type active region, a dielectric layer over the semiconductor substrate, a first metal layer having a first work function formed over the dielectric layer, the first metal layer being at least partially removed from over the second-type active region, a second metal layer over the first metal layer in the first-type active region and over the dielectric layer in the second-type active region, the second metal layer having a second work function, and a third metal layer over the second metal layer in the first-type active region and over the second metal layer in the second-type active region.

Abstract: A method of fabricating a semiconductor device includes providing a semiconductor substrate having a first active region and a second active region, forming a first metal layer over a high-k dielectric layer, removing at least a portion of the first metal layer in the second active region, forming a second metal layer on first metal layer in the first active region and over the high-k dielectric layer in the second active region, and thereafter, forming a silicon layer over the second metal layer. The method further includes removing the silicon layer from the first gate stack thereby forming a first trench and from the second gate stack thereby forming a second trench, and forming a third metal layer over the second metal layer in the first trench and over the second metal layer in the second trench.

Abstract: The present invention discloses a method of preventing and treating allergic airway diseases via intranasal gabexate mesilate, comprising administrating a pharmaceutically effective amount of a composition comprising a gabexate mesilate via nasal spray to prevent and treat allergy induced by a serine protease type allergen.

Abstract: Methods of fabricating semiconductor devices with high-k/metal gate features are disclosed. In some instances, methods of fabricating semiconductor devices with high-k/metal gate features are disclosed that prevent or reduce high-k/metal gate contamination of non-high-k/metal gate wafers and production tools. In some embodiments, the method comprises forming an interfacial layer over a semiconductor substrate on a front side of the substrate; forming a high-k dielectric layer and a capping layer over the interfacial layer; forming a metal layer over the high-k and capping layers; forming a polysilicon layer over the metal layer; and forming a dielectric layer over the semiconductor substrate on a back side of the substrate.

Abstract: A method of fabricating a semiconductor device includes providing a semiconductor substrate having a first active region and a second active region, forming a first metal layer over a high-k dielectric layer, removing at least a portion of the first metal layer in the second active region, forming a second metal layer on first metal layer in the first active region and over the high-k dielectric layer in the second active region, and thereafter, forming a silicon layer over the second metal layer. The method further includes removing the silicon layer from the first gate stack thereby forming a first trench and from the second gate stack thereby forming a second trench, and forming a third metal layer over the second metal layer in the first trench and over the second metal layer in the second trench.

Abstract: Provided are methods of patterning metal gate structures including a high-k gate dielectric. In an embodiment, a soluble hard mask layer may be used to provide a masking element to pattern a metal gate. The soluble hard mask layer may be removed from the substrate by water or a photoresist developer. In an embodiment, a hard mask including a high-k dielectric is formed. In a further embodiment, a protection layer is formed underlying a photoresist pattern. The protection layer may protect one or more layers formed on the substrate from a photoresist stripping process.

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first active region and a second active region, forming a high-k dielectric layer over the semiconductor substrate, forming a capping layer over the high-k dielectric layer, forming a first metal layer over the capping layer, the first metal layer having a first work function, forming a mask layer over the first metal layer in the first active region, removing the first metal layer and at least a portion of the capping layer in the second active region using the mask layer, and forming a second metal layer over the partially removed capping layer in the second active region, the second metal layer having a second work function.

Abstract: Methods of fabricating semiconductor devices with high-k/metal gate features are disclosed. In some instances, methods of fabricating semiconductor devices with high-k/metal gate features are disclosed that prevent or reduce high-k/metal gate contamination of non-high-k/metal gate wafers and production tools. In some embodiments, the method comprises forming an interfacial layer over a semiconductor substrate on a front side of the substrate; forming a high-k dielectric layer and a capping layer over the interfacial layer; forming a metal layer over the high-k and capping layers; forming a polysilicon layer over the metal layer; and forming a dielectric layer over the semiconductor substrate on a back side of the substrate.

Abstract: A method of semiconductor fabrication including an etching process is provided. The method includes providing a substrate and forming a target layer on the substrate. An etchant layer is formed on the target layer. The etchant layer reacts with the target layer and etches a portion of the target layer. In an embodiment, an atomic layer of the target layer is etched. The etchant layer is then removed from the substrate. The process may be iterated any number of times to remove a desired amount of the target layer. In an embodiment, the method provides for decreased lateral etching. The etchant layer may provide for improved control in forming patterns in thin target layers such as, capping layers or high-k dielectric layers of a gate structure.