Patents by Inventor Yi-Hsing Chen

Yi-Hsing Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030218244
    Abstract: This invention provides a solution to increase the yield strength and fatigue strength of miniaturized springs, which can be fabricated in arrays with ultra-small pitches. It also discloses a solution to minimize adhesion of the contact pad materials to the spring tips upon repeated contacts without affecting the reliability of the miniaturized springs. In addition, the invention also presents a method to fabricate the springs that allow passage of relatively higher current without significantly degrading their lifetime.
    Type: Application
    Filed: March 17, 2003
    Publication date: November 27, 2003
    Inventors: Syamal Kumar Lahiri, Frank Swiatowiec, Fu Chiung Chong, Sammy Mok, Erh-Kong Chieh, Roman L. Milter, Joseph M. Haemer, Chang-Ming Lin, Yi-Hsing Chen, David Thanh Doan
  • Publication number: 20030214045
    Abstract: This invention provides a solution to increase the yield strength and fatigue strength of miniaturized springs, which can be fabricated in arrays with ultra-small pitches. It also discloses a solution to minimize adhesion of the contact pad materials to the spring tips upon repeated contacts without affecting the reliability of the miniaturized springs. In addition, the invention also presents a method to fabricate the springs that allow passage of relatively higher current without significantly degrading their lifetime.
    Type: Application
    Filed: March 17, 2003
    Publication date: November 20, 2003
    Inventors: Syamal Kumar Lahiri, Frank Swiatowiec, Fu Chiung Chong, Sammy Mok, Erh-Kong Chieh, Roman L. Milter, Joseph M. Haemer, Chang-Ming Lin, Yi-Hsing Chen, David Thanh Doan
  • Patent number: 6605319
    Abstract: The method of the invention involves depositing a plurality of thin layers of film, each layer having a thickness ranging from about 500Å to about 2000Å. Low Pressure Chemical Vapor Deposition or other techniques known in the art maybe used to deposit each thin layer of film. The film is polysilicon or silicon-germanium, where the germanium content ranges from about 4% by weight to about 20% by weight germanium. A Rapid Thermal Anneal (“RTA”) is performed on a deposited thin film layer to relieve residual film stress in at least that film layer. The use of RTA rather than furnace annealing permits much shorter annealing times. Optionally, but advantageously, hydrogen may be present during RTA to permit the use of lower processing temperatures, typically about 20% lower relative to a customary anneal. A series of film deposition/rapid thermal anneal cycles is used to produce the desired, nominal total thickness polysilicon film.
    Type: Grant
    Filed: February 11, 2002
    Date of Patent: August 12, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Jeffrey D. Chinn, Yi-Hsing Chen, Robert Z. Bachrach, John Christopher Moran