Abstract: A semiconductor device includes a first gate structure extending along a first lateral direction. The semiconductor device includes a first interconnect structure, disposed above the first gate structure, that extends along a second lateral direction perpendicular to the first lateral direction. The first interconnect structure includes a first portion and a second portion electrically isolated from each other by a first dielectric structure. The semiconductor device includes a second interconnect structure, disposed between the first gate structure and the first interconnect structure, that electrically couples the first gate structure to the first portion of the first interconnect structure. The second interconnect structure includes a recessed portion that is substantially aligned with the first gate structure and the dielectric structure along a vertical direction.

Abstract: A static random access memory (SRAM) cell includes a first p-type semiconductor fin, a first dielectric fin, a first hybrid fin, a second hybrid fin, a second dielectric fin, and a second p-type semiconductor fin disposed in this order along a first direction and oriented lengthwise along a second direction, where each of the first and the second hybrid fins has a first portion including an n-type semiconductor material and a second portion including a dielectric material. The SRAM cell further includes n-type source/drain (S/D) epitaxial features disposed over each of the first and the second p-type semiconductor fins, p-type S/D epitaxial features disposed over the first portion of each of the first and the second hybrid fins, and S/D contacts physically contacting each of the p-type S/D epitaxial features and the second portion of each of the first and the second hybrid fins.

Abstract: Methods of performing backside etching processes on source/drain regions and gate structures of semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first transistor structure; a first interconnect structure on a front-side of the first transistor structure; and a second interconnect structure on a backside of the first transistor structure, the second interconnect structure including a first dielectric layer on the backside of the first transistor structure; a contact extending through the first dielectric layer to a source/drain region of the first transistor structure; and first spacers along sidewalls of the contact between the contact and the first dielectric layer, sidewalls of the first spacers facing the first dielectric layer being aligned with sidewalls of the source/drain region of the first transistor structure.

Abstract: A fin field effect transistor device structure includes a first fin structure formed on a substrate. The fin field effect transistor device structure also includes a spacer layer surrounding the first fin structure. The fin field effect transistor device structure further includes a power rail formed over the substrate besides a bottom portion of the first fin structure. The fin field effect transistor device structure further includes a first contact structure formed over the first fin structure and in contact with a portion of the power rail.

Abstract: Semiconductor devices and methods of forming the same are provided. A method according to the present disclosure includes providing a workpiece including a frontside and a backside. The workpiece includes a substrate, a first plurality of channel members over a first portion of the substrate, a second plurality of channel members over a second portion of the substrate, an isolation feature sandwiched between the first and second portions of the substrate. The method also includes forming a joint gate structure to wrap around each of the first and second pluralities of channel members, forming a pilot opening in the isolation feature, extending the pilot opening through the join gate structure to form a gate cut opening that separates the joint gate structure into a first gate structure and a second gate structure, and depositing a dielectric material into the gate cut opening to form a gate cut feature.

Abstract: The present disclosure relates to an integrated circuit. In one implementation, the integrated circuit may include a semiconductor substrate; at least one source region comprising a first doped semiconductor material; at least one drain region comprising a second doped semiconductor material; at least one gate formed between the at least one source region and the at least one drain region; and a nanosheet formed between the semiconductor substrate and the at least one gate. The nanosheet may be configured as a routing channel for the at least one gate and may have a first region having a first width and a second region having a second width. The first width may be smaller than the second width.

Abstract: Methods of performing backside etching processes on source/drain regions and gate structures of semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first transistor structure; a first interconnect structure on a front-side of the first transistor structure; and a second interconnect structure on a backside of the first transistor structure, the second interconnect structure including a first dielectric layer on the backside of the first transistor structure; a contact extending through the first dielectric layer to a source/drain region of the first transistor structure; and first spacers along sidewalls of the contact between the contact and the first dielectric layer, sidewalls of the first spacers facing the first dielectric layer being aligned with sidewalls of the source/drain region of the first transistor structure.

Abstract: A memory device includes a memory array having a first memory cell in a first column of the memory array, a second memory cell in the first column of the memory array, a first read bit line extending in a column direction and connected to the first memory cell to read data from the first memory cell, and a second read bit line extending in the column direction and connected to the second memory cell to read data from the second memory cell.

Abstract: Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes a first gate structure disposed over a first backside dielectric feature, a second gate structure disposed over a second backside dielectric feature, a gate cut feature extending continuously from between the first gate structure and the second gate structure to between the first backside dielectric feature and the second backside dielectric feature, and a liner disposed between the gate cut feature and the first backside dielectric feature and between the gate cut feature and the second backside dielectric feature.

Abstract: A semiconductor structure includes a first transistor having a first source/drain (S/D) feature and a first gate; a second transistor having a second S/D feature and a second gate; a multi-layer interconnection disposed over the first and the second transistors; a signal interconnection under the first and the second transistors; and a power rail under the signal interconnection and electrically isolated from the signal interconnection, wherein the signal interconnection electrically connects one of the first S/D feature and the first gate to one of the second S/D feature and the second gate.

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a transistor, a first embedded insulating structure and a second embedded insulating structure. The transistor is formed on a substrate, and includes a gate structure, channel structures, a source electrode and a drain electrode. The channel structures penetrate through the gate structure, and are in contact with the source and drain electrodes. The first and second embedded insulating structures are disposed in the substrate, and overlapped with the source and drain electrodes. The first and second embedded insulating structures are laterally spaced apart from each other by a portion of the substrate lying under the gate structure.

Abstract: Devices and methods are described herein that obviate the need for a read assist circuit. In one example, a semiconductor device includes a source region and a drain region formed above a substrate. A buried insulator (BI) layer is formed beneath either the source region or the drain region. A first nano-sheet is formed (i) horizontally between the source region and the drain region and (ii) vertically above the BI layer. The BI layer reduces current flow through the first nano-sheet.

Abstract: Devices and methods are described herein that obviate the need for a read assist circuit. In one example, a semiconductor device includes a source region and a drain region formed above a substrate. A buried insulator (BI) layer is formed beneath either the source region or the drain region. A first nano-sheet is formed (i) horizontally between the source region and the drain region and (ii) vertically above the BI layer. The BI layer reduces current flow through the first nano-sheet.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a semiconductor fin disposed over a substrate; a metal gate structure disposed over a channel region of the semiconductor fin; a first interlayer dielectric (ILD) layer disposed over a source/drain (S/D) region next to the channel region of the semiconductor fin; and a first conductive feature including a first conductive portion disposed on the metal gate structure and a second conductive portion disposed on the first ILD layer, wherein a top surface of the first conductive portion is below a top surface of the second conductive portion, a first sidewall of the first conductive portion connects a lower portion of a first sidewall of the second conductive portion.

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a first source/drain structure and a second source/drain structure over a semiconductor substrate. The method also includes forming a dielectric layer over the first source/drain structure and the second source/drain structure and forming a conductive contact on the first source/drain structure. The method further includes forming a first conductive via over the conductive contact, and the first conductive via is misaligned with the first source/drain structure. In addition, the method includes forming a second conductive via directly above the second source/drain structure, and the second conductive via is longer than the first conductive via.

Abstract: An IC structure includes a source epitaxial structure, a drain epitaxial structure, a first silicide region, a second silicide region, a source contact, a backside via rail, a drain contact, and a front-side interconnection structure. The first silicide region is on a front-side surface and a first sidewall of the source epitaxial structure. The second silicide region is on a front-side surface of the drain epitaxial structure. The source contact is in contact with the first silicide region and has a protrusion extending past a backside surface of the source epitaxial structure. The backside via rail is in contact with the protrusion of the source contact. The drain contact is in contact with the second silicide region. The front-side interconnection structure is on a front-side surface of the source contact and a front-side surface of the drain contact.

Abstract: The present disclosure provides an embodiment of an integrated structure that includes a first electrode of a first conductive material embedded in a first semiconductor substrate; a second electrode of a second conductive material embedded in a second semiconductor substrate; and a electrolyte disposed between the first and second electrodes. The first and second semiconductor substrates are bonded together through bonding pads such that the first and second electrodes are enclosed between the first and second semiconductor substrates. The second conductive material is different from the first conductive material.

Abstract: In an embodiment, a method of forming a structure includes forming a first transistor and a second transistor over a first substrate; forming a front-side interconnect structure over the first transistor and the second transistor; etching at least a backside of the first substrate to expose the first transistor and the second transistor; forming a first backside via electrically connected to the first transistor; forming a second backside via electrically connected to the second transistor; depositing a dielectric layer over the first backside via and the second backside via; forming a first conductive line in the dielectric layer, the first conductive line being a power rail electrically connected to the first transistor through the first backside via; and forming a second conductive line in the dielectric layer, the second conductive line being a signal line electrically connected to the second transistor through the second backside via.

Abstract: In an embodiment, a device includes: a power rail contact; an isolation region on the power rail contact; a first dielectric fin on the isolation region; a second dielectric fin adjacent the isolation region and the power rail contact; a first source/drain region on the second dielectric fin; and a source/drain contact between the first source/drain region and the first dielectric fin, the source/drain contact contacting a top surface of the first source/drain region, a side surface of the first source/drain region, and a top surface of the power rail contact.

Abstract: A semiconductor structure includes a first semiconductor fin and a second semiconductor fin adjacent to the first semiconductor fin, a first epitaxial source/drain (S/D) feature disposed over the first semiconductor fin, a second epitaxial S/D feature disposed over the second semiconductor fin, an interlayer dielectric (ILD) layer disposed over the first and the second epitaxial S/D features, and an S/D contact disposed over and contacting the first epitaxial S/D feature, where a portion of the S/D contact laterally extends over the second epitaxial S/D feature, and the portion is separated from the second epitaxial S/D feature by the ILD layer.