Abstract: A package structure includes a die, a first insulating layer and a first conductive layer. The die includes a first alignment pattern. The first insulating layer includes a first opening. The first conductive layer includes a first conductive pattern and a second alignment pattern. The first conductive pattern is located in the first opening and the second alignment pattern is located on the first insulating layer. The first alignment pattern and the second alignment pattern are disposed corresponding to each other.

Abstract: A method embodiment for forming a semiconductor device includes providing a dielectric layer having a damaged surface and repairing the damaged surface of the dielectric layer. Repairing the damaged surface includes exposing the damaged surface of the dielectric layer to a precursor chemical, activating the precursor chemical using light energy, and filtering out a spectrum of the light energy while activating the precursor chemical.

Abstract: Various methods and structures formed by those methods are described. In accordance with a method, a first metal-containing layer is formed on a substrate. A second metal-containing layer is formed on the substrate. A material of the first metal-containing layer is different from a material of the second metal-containing layer. A chlorine-based treatment is performed on the first metal-containing layer and the second metal-containing layer. A third metal-containing layer is deposited on the first metal-containing layer and the second metal-containing layer using Atomic Layer Deposition (ALD).

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.

Abstract: A metal-laminated structure is provided. The metal-laminated structure includes a substrate, a compressive stress layer disposed on the substrate, and at least one metal layer disposed on the compressive stress layer, wherein the thickness ratio of the metal layer to the compressive stress layer is in a range from 1 to 30. A high-frequency device including the metal-laminated structure is also provided.

Abstract: A multi-mode squat rack includes a frame, a support unit and a handle unit. The frame includes two struts pivotally connected to each other, two stepping boards connected to one of the struts, and a mount pivotally connected to the first strut. The support unit includes a seat post pivotally connected to the first strut, a seat supported on the seat post, a pair of ears supported on a side of the seat post near the first strut, at least one fin supported on an opposite side of the seat post, and an elastic unit arranged between the mount and the fin. The handle unit includes a stem pivotally connected to the first strut, a connection rod formed with an end pivotally connected to the stem and another end pivotally connected to the first strut or the pair of ears, and a handle connected to the stem.

Abstract: A honeycomb heater includes a lamp housing having an outer edge that forms a partial circle. The lamp housing has an opening extending from a top surface to a bottom surface of the lamp housing. The opening further extends from the outer edge into a center region of the lamp housing. A plurality of lamps is distributed throughout the lamp housing, and is configured to emit light out of the top surface of the lamp housing.

Abstract: Various methods and structures formed by those methods are described. In accordance with a method, a first metal-containing layer is formed on a substrate. A second metal-containing layer is formed on the substrate. A material of the first metal-containing layer is different from a material of the second metal-containing layer. A chlorine-based treatment is performed on the first metal-containing layer and the second metal-containing layer. A third metal-containing layer is deposited on the first metal-containing layer and the second metal-containing layer using Atomic Layer Deposition (ALD).

Abstract: A locking structure is applied to a folding frame. The folding frame includes a first frame and a second frame. The first frame includes a first hole. The second frame includes a second hole. The second frame can rotate relative to the first frame to fasten to the first frame. The locking structure includes a case, a first pivoting axis, a second pivoting axis, a fastening column, a connecting column and a third pivoting axis. The case includes a top, a bottom and a container. The first pivoting axis is pivotally connected to the bottom and the first hole. The second pivoting axis is pivotally connected to the second hole. The second pivoting axis includes a fastening groove. The fastening column is located in the container. The connecting column includes a connecting column first end and a connecting column second end.

Abstract: A light-emitting device is provided. The light-emitting device comprises: an epitaxial structure comprising a first DBR stack, a light-emitting stack and a second DBR stack and a contact layer in sequence; an electrode on the epitaxial structure; a current blocking layer between the contact layer and the electrode; a first opening formed in the current blocking layer; and a second opening formed in the electrode and within the first opening; wherein a part of the electrode fills in the first opening and contacts the contact layer.

Abstract: A multi-mode squat rack includes a frame, a support unit and a handle unit. The frame includes two struts pivotally connected to each other, two stepping boards connected to one of the struts, and a mount pivotally connected to the first strut. The support unit includes a seat post pivotally connected to the first strut, a seat supported on the seat post, a pair of ears supported on a side of the seat post near the first strut, at least one fin supported on an opposite side of the seat post, and an elastic unit arranged between the mount and the fin. The handle unit includes a stem pivotally connected to the first strut, a connection rod formed with an end pivotally connected to the stem and another end pivotally connected to the first strut or the pair of ears, and a handle connected to the stem.

Abstract: A locking structure is applied to a folding frame. The folding frame includes a first frame and a second frame. The first frame includes a first hole. The second frame includes a second hole. The second frame can rotate relative to the first frame to fasten to the first frame. The locking structure includes a case, a first pivoting axis, a second pivoting axis, a fastening column, a connecting column and a third pivoting axis. The case includes a top, a bottom and a container. The first pivoting axis is pivotally connected to the bottom and the first hole. The second pivoting axis is pivotally connected to the second hole. The second pivoting axis includes a fastening groove. The fastening column is located in the container. The connecting column includes a connecting column first end and a connecting column second end.

Abstract: An IC manufacturing method includes forming first mandrels and second mandrels over a substrate; and forming first spacers on sidewalls of the first mandrels and second spacers on sidewalls of the second mandrels. Each of the first and second spacers has a loop structure with two curvy portions connected by two lines. The method further includes removing the first and second mandrels; and removing the curvy portions from each of the first spacers without removing the curvy portions from the second spacers. The second spacers are used for monitoring variations of the IC fabrication processes.

Abstract: A light-emitting device is provided. The light-emitting device is configured to emit a radiation and comprises: a substrate; an epitaxial structure on the substrate and comprising a first DBR stack, a light-emitting stack and a second DBR stack and a contact layer in sequence; an electrode; a current blocking layer between the contact layer and the electrode; a first opening formed in the current blocking layer; and a second opening formed in the electrode and within the first opening; wherein a part of the electrode fills in the first opening and contacts the contact layer; and the light-emitting device is devoid of an oxidized layer and an ion implanted layer in the second DBR stack.

Abstract: A system and method for plasma enhanced deposition processes. An exemplary semiconductor manufacturing system includes a susceptor configured to hold a semiconductor wafer and a sector disposed above the susceptor. The sector includes a first plate and an overlying second plate, operable to form a plasma there between. The first plate includes a plurality of holes extending through the first plate, which vary in at least one of diameter and density from a first region of the first plate to a second region of the first plate.

Abstract: A bionic fixing apparatus is provided. The bionic fixing apparatus includes a flexible portion having at least one trench. The trench is disposed on the surface of the flexible portion and has a first end and a second end. An interval is disposed between the first end and the second end. The trench is disposed for spreading the stress applied on the bionic fixing apparatus and preventing stress concentration and stress shielding.

Abstract: A light-emitting device is provided. The light-emitting device is configured to emit a radiation and comprises: a substrate; an epitaxial structure on the substrate and comprising a first DBR stack, a light-emitting stack and a second DBR stack and a contact layer in sequence; an electrode; a current blocking layer between the contact layer and the electrode; a first opening formed in the current blocking layer; and a second opening formed in the electrode and within the first opening; wherein a part of the electrode fills in the first opening and contacts the contact layer; and the light-emitting device is devoid of an oxidized layer and an ion implanted layer in the second DBR stack.

Abstract: A method for measuring an implant dosage distribution of a semiconductor sample is provided. The method includes generating a photomodulation effect in a three-dimensional structure of the semiconductor sample and measuring a reflection information of the three-dimensional structure. A geometry information of the three-dimensional structure of the semiconductor sample is obtained. The geometry information of the three-dimensional structure is converted into an estimated reflective data. The reflection information is compared with the estimated reflective data to determine the implant dosage distribution of the three-dimensional structure of the semiconductor sample.

Abstract: A squat rack includes a frame, a tread unit, a lifting unit, a pulling unit and a connector. The tread unit includes two treads connected to and located on two sides of the frame for supporting a user's feet so that the frame is firmly kept on the ground by the user. The lifting unit is pivotally connected to the frame and located behind the user in operation. The pulling unit includes a middle portion pivotally connected to a front end of the frame. The connector pivotally connects a lower end of the pulling unit to the lifting unit so that the user can pull the pulling unit to cause the lifting unit to support the user's hips via the connector.