Abstract: A method includes receiving data representing a layout of a DPT-layer of an integrated circuit generated by a place and route tool. The layout includes a plurality of polygons to be formed in the DPT-layer by a multi-patterning process. First and second ones of the plurality of polygons to be formed using first and second photomasks, respectively are identified. Any intervening polygons along a first path connecting the first polygon to the second polygon, and separator regions between adjacent polygons along the first path are identified. The separator regions have sizes less than a minimum threshold distance between polygons formed on the first photomask. The separator regions are counted. A multi-patterning conflict is identified, if the count of separator regions is even, prior to assigning all remaining ones of the plurality of polygons to the first or second masks.

Abstract: A method comprises (a) receiving data representing a layout of a DPT-layer of an integrated circuit generated by a place and route tool, the layout including a plurality of polygons to be formed in the DPT-layer by a multi-patterning process; (b) receiving at least one identification of a subset of the plurality of polygons that are to be formed in the DPT-layer using the same photomask as each other; (c) constructing a graph of the subset of the plurality of polygons and any intervening polygons of the plurality of polygons, where the subset of the plurality of polygons are represented in the graph by a single node, the graph including connections connecting adjacent ones of the polygons in the graph that are positioned within a threshold distance of each other; and (d) identifying a multi-patterning conflict if any subset of the connections form an odd loop.

Abstract: A method includes creating a technology file including data for an integrated circuit including at least one die coupled to an interposer and a routing between the at least one die and the interposer, b) creating a netlist including data approximating at least one of capacitive or inductive couplings between conductors in the at least one die and in the interposer based on the technology file, c) simulating a performance of the integrated circuit based on the netlist, d) adjusting the routing between the at least one die and the interposer based on the simulation to reduce the at least one of the capacitive or the inductive couplings, and e) repeating steps c) and d) to optimize the at least one of the capacitive or inductive couplings.

Abstract: A computer implemented system comprises: a tangible, non-transitory computer readable storage medium encoded with data representing an initial layout of an integrated circuit pattern layer having a plurality of polygons. A special-purpose computer is configured to perform the steps of: analyzing in the initial layout of an integrated circuit pattern layer having a plurality of polygons, so as to identify a plurality of multi-patterning conflict cycles in the initial layout; constructing in the computer a respective multi-patterning conflict cycle graph representing each identified multi-patterning conflict cycle; classifying each identified multi-patterning conflict cycle graph in the computer according to a number of other multi-patterning conflict cycle graphs which enclose that multi-patterning conflict cycle graph; and causing a display device to graphically display the plurality of multi-patterning conflict cycle graphs according to their respective classifications.

Abstract: A method includes performing a place and route operation using an electronic design automation tool to generate a preliminary layout for a photomask to be used to form a circuit pattern of a semiconductor device. The place and route operation is constrained by a plurality of single patterning spacer technique (SPST) routing rules. Dummy conductive fill patterns are emulated within the EDA tool using an RC extraction tool to predict locations and sizes of dummy conductive fill patterns to be added to the preliminary layout of the photomask. An RC timing analysis of the circuit pattern is performed within the EDA tool, based on the preliminary layout and the emulated dummy conductive fill patterns.

Abstract: The present disclosure relates to a method and apparatus for identifying pre-coloring violations and for providing hints and/or warnings to a designer to eliminate the pre-coloring violations. In some embodiments, the method is performed by identifying G0-spaces within a double patterning technology (DPT) layer, of an integrated chip (IC) layout, having a plurality of pre-colored shapes. Violation paths extending between the pre-colored shapes are identified based upon the G0-spaces. Good paths (i.e., paths that will not cause a violation) and bad paths (i.e., paths that will cause a violation) between the pre-colored shapes are also identified. Hints and/or warnings are generated based upon the identified good and bad paths, wherein the hints and/or warnings provide guidance to eliminate the violation paths and develop a violation free IC layout.

Abstract: A received layout identifies a plurality of circuit components to be included in an integrated circuit (IC) layer for double patterning the layer using two photomasks, the layout including a plurality of first patterns to be included in the first photomask and at least one second pattern to be included in the second photomask. A selected one of the first patterns has first and second endpoints, to be replaced by a replacement pattern connecting the first endpoint to a third endpoint. At least one respective keep-out region is provided adjacent to each respective remaining first pattern except for the selected first pattern. Data are generated representing the replacement pattern, such that no part of the replacement pattern is formed in any of the keep-out regions. Data representing the remaining first patterns and the replacement pattern are output.

Abstract: A method of generating resistance-capacitance (RC) technology files is disclosed. The method comprises receiving a plurality of metal schemes from an IC foundry and dividing the plurality of metal schemes into one or more modular RC groups. The method further comprises identifying a modular RC structure; calculating capacitance values of the modular RC structure by means of a field solver; calculating an equivalent dielectric constant and an equivalent height of the RC structure based upon a variety of interconnect layers not having interconnects; calculating an equivalent dielectric constant and an equivalent height for each of the plurality of metal schemes; and deriving capacitance values of each of the plurality of metal schemes from the capacitance values of the modular RC structure.

Abstract: A verification system for verifying an integrated circuit design is provided. The verification system includes a functional block finding module configured to identify potential sensitive circuits in the integrated circuit design; and a search module. The search module is configured to find sensitive circuits from the potential sensitive circuits; and verify the sensitive circuits.

Abstract: In a method of forming an integrated circuit, a layout of a chip representation including a first intellectual property (IP) is provided. Cut lines that overlap, and extend out from, edges of the first IP, are generated. The cut lines divide the chip representation into a plurality of circuit regions. The plurality of circuit regions are shifted outward with relative to a position of the first IP to generate a space. The first IP is blown out into the space to generate a blown IP. A direct shrink is then performed.

Abstract: A method comprises (a) receiving data representing a layout of a DPT-layer of an integrated circuit generated by a place and route tool, the layout including a plurality of polygons to be formed in the DPT-layer by a multi-patterning process; (b) receiving at least one identification of a subset of the plurality of polygons that are to be formed in the DPT-layer using the same photomask as each other; (c) constructing a graph of the subset of the plurality of polygons and any intervening polygons of the plurality of polygons, where the subset of the plurality of polygons are represented in the graph by a single node, the graph including connections connecting adjacent ones of the polygons in the graph that are positioned within a threshold distance of each other; and (d) identifying a multi-patterning conflict if any subset of the connections form an odd loop.

Abstract: A method includes receiving data representing a layout of a DPT-layer of an integrated circuit generated by a place and route tool. The layout includes a plurality of polygons to be formed in the DPT-layer by a multi-patterning process. First and second ones of the plurality of polygons to be formed using first and second photomasks, respectively are identified. Any intervening polygons along a first path connecting the first polygon to the second polygon, and separator regions between adjacent polygons along the first path are identified. The separator regions have sizes less than a minimum threshold distance between polygons formed on the first photomask. The separator regions are counted. A multi-patterning conflict is identified, if the count of separator regions is even, prior to assigning all remaining ones of the plurality of polygons to the first or second masks.

Abstract: A method includes creating a technology file including data for an integrated circuit including at least one die coupled to an interposer and a routing between the at least one die and the interposer, b) creating a netlist including data approximating at least one of capacitive or inductive couplings between conductors in the at least one die and in the interposer based on the technology file, c) simulating a performance of the integrated circuit based on the netlist, d) adjusting the routing between the at least one die and the interposer based on the simulation to reduce the at least one of the capacitive or the inductive couplings, and e) repeating steps c) and d) to optimize the at least one of the capacitive or inductive couplings.

Abstract: An integrated circuit (IC) design method includes providing IC design layout data; simulating a chemical mechanical polishing (CMP) process to a material layer based on the IC design layout, to generate various geometrical parameters; extracting resistance and capacitance based on the various geometrical parameters from the simulating of the CMP process; and performing circuit timing analysis based on the extracted resistance and capacitance.

Abstract: In a method of designing a double patterning mask set, a chip is first divided into a grid that includes grid cells. A metal layer of the chip is laid out. In substantially each of the grid cells, all left-boundary patterns of the metal layer are assigned with a first indicator, and all right-boundary patterns of the metal layer are assigned with a second indicator. Starting from one of the grid cells in a row, indicator changes are propagated throughout the row. All patterns in the grid cells are transferred to the double patterning mask set. All patterns assigned with the first indicator are transferred to a first mask of the double patterning mask set, and all patterns assigned with the second indicator transferred to a second mask of the double patterning mask set.

Abstract: A method includes performing a place and route operation using an electronic design automation tool to generate a preliminary layout for a photomask to be used to form a circuit pattern of a semiconductor device. The place and route operation is constrained by a plurality of single patterning spacer technique (SPST) routing rules. Dummy conductive fill patterns are emulated within the EDA tool using an RC extraction tool to predict locations and sizes of dummy conductive fill patterns to be added to the preliminary layout of the photomask. An RC timing analysis of the circuit pattern is performed within the EDA tool, based on the preliminary layout and the emulated dummy conductive fill patterns.

Abstract: An apparatus comprises two n-type metal oxide semiconductor (MOS) devices formed next to each other. Each n-type MOS device further includes a pair of face-to-face diodes formed in an isolation ring. A method of modeling the apparatus comprises reusing four-terminal MOS device models in standard cell libraries and combining the four-terminal MOS device model and the isolation ring model into a 4T MOS plus isolation ring model. The method of modeling the apparatus further comprises adding a dummy device between a body contact of the first n-type MOS device and a body contact of the second n-type MOS device.

Abstract: A method for integrated circuit design includes providing a layout of an integrated circuit; determining key parameters of the integrated circuit; determining target values of the key parameters; and performing a first shrinkage of the layout using a first shrink percentage to generate a shrunk layout. The shrunk layout is evaluated by generating values of the key parameters from the shrunk layout. A portion of the values of the key parameters failing to meet respective ones of the target values is found. Guidelines for tuning manufacturing processes of the shrunk layout are provided, so that the portion of the values of the key parameters can meet the respective ones of the target values.

Abstract: A method includes approximating a physical characteristic of a semiconductor substrate with a frequency-dependent circuit, and creating a technology file for the semiconductor substrate based on the frequency-dependent circuit. The physical characteristic of the semiconductor substrate identified by one of an electromagnetic simulation or a silicon measurement. The technology file is adapted for use by an electronic design automation tool to create a netlist for the semiconductor substrate and is stored in a non-transient computer readable storage medium.

Abstract: A method of generating resistance-capacitance (RC) technology files is disclosed. The method comprises receiving a plurality of metal schemes from an IC foundry and dividing the plurality of metal schemes into one or more modular RC groups. The method further comprises identifying a modular RC structure; calculating capacitance values of the modular RC structure by means of a field solver; calculating an equivalent dielectric constant and an equivalent height of the RC structure based upon a variety of interconnect layers not having interconnects; calculating an equivalent dielectric constant and an equivalent height for each of the plurality of metal schemes; and deriving capacitance values of each of the plurality of metal schemes from the capacitance values of the modular RC structure.