Abstract: The present disclosure relates to novel compounds that inhibit glucose-induced degradation-deficient (GID) E3 ligase, pharmaceutical compositions containing such compounds, and their use in prevention and treatment of cancer and related diseases and conditions.

Abstract: The present invention relates to a method for preparing high-purity vanadium pentoxide from vanadium-bearing shale by all-wet process. The technical solution is: the “Gradient continuous leaching system of vanadium-bearing shale” is used to wet activate and compound leach vanadium-bearing shale to obtain vanadium-containing acid leachate. The “pH adjusting device of the vanadium-containing acid leachate” is used to adjust the pH of vanadium-containing acid leaching leachate. The post-treatment solution is subjected to hydroxime countercurrent extraction after oxidation, and the raffinate returns to the water using in the wet activation and electrodialysis after neutralization, and the loaded organic phase is regenerated by countercurrent reduction stripping. The regenerated organic phase directly returns to hydroxime countercurrent extraction.

Abstract: An integrated circuit device includes a gate stack disposed over a substrate. A first L-shaped spacer is disposed along a first sidewall of the gate stack and a second L-shaped spacer is disposed along a second sidewall of the gate stack. The first L-shaped spacer and the second L-shaped spacer include silicon and carbon. A first source/drain epitaxy region and a second source/drain epitaxy region are disposed over the substrate. The gate stack is disposed between the first source/drain epitaxy region and the second source/drain epitaxy region. An interlevel dielectric (ILD) layer disposed over the substrate. The ILD layer is disposed between the first source/drain epitaxy region and a portion of the first L-shaped spacer disposed along the first sidewall of the gate stack and between the second source/drain epitaxy region and a portion of the second L-shaped spacer disposed along the second sidewall of the gate stack.

Abstract: A method for generating millimeter wave noise with a flat RF (radio frequency) spectrum includes the following steps. A noise optical signal with an optical spectrum in Gaussian shape is output by a first optical emission module. The noise optical signal is transmitted to an optical coupler. n beams of noise optical signals with optical spectra in Gaussian shape is output by a second optical emission module. The noise optical signals is transmitted to the optical coupler. The noise light generated by the first optical emission module and the second optical emission module is coupled to the optical coupler. The coupled optical signals is transmitted to a photodetector. The beat frequency is performed by the photodetector to realize mapping transformation from the optical spectra to the RF spectra. The flat millimeter wave noise is output.

Abstract: A method for generating millimeter wave noise with a flat RF (radio frequency) spectrum includes the following steps. A noise optical signal with an optical spectrum in Gaussian shape is output by a first optical emission module. The noise optical signal is transmitted to an optical coupler. n beams of noise optical signals with optical spectra in Gaussian shape is output by a second optical emission module. The noise optical signals is transmitted to the optical coupler. The noise light generated by the first optical emission module and the second optical emission module is coupled to the optical coupler. The coupled optical signals is transmitted to a photodetector. The beat frequency is performed by the photodetector to realize mapping transformation from the optical spectra to the RF spectra. The flat millimeter wave noise is output.

Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a semiconductor substrate. One or more isolation structures are arranged within one or more trenches in the semiconductor substrate. The one or more trenches are disposed along opposing sides of a photo-diode region within the semiconductor substrate. The semiconductor substrate includes an undulating exterior having rounded corners arranged laterally between neighboring ones of a plurality of flat surfaces. The rounded corners and the plurality of flat surfaces forming a plurality of triangular shaped protrusions arranged between the one or more isolation structures, as viewed along a cross-sectional view.

Abstract: The problem of reducing noise in image sensing devices, especially NIR detectors, is solved by providing ground connections for the reflectors. The reflectors may be grounded through vias that couple the reflectors to grounded areas of the substrate. The grounded areas of the substrate may be P+ doped areas formed proximate the surface of the substrate. In particular, the P+ doped areas may be parts of photodiodes. Alternatively, the reflectors may be grounded through a metal interconnect structure formed over the front side of the substrate.

Abstract: In some embodiments, the present disclosure relates to an image sensor, including a first photodiode and a second photodiode disposed in a semiconductor substrate. A floating diffusion node is disposed along a frontside of the semiconductor substrate and between the first and second photodiodes. A partial backside deep trench isolation (BDTI) structure is disposed within the semiconductor substrate and between the first and second photodiodes. The partial BDTI extends from a backside of the semiconductor substrate and is spaced from the floating diffusion node. A full BDTI structure extends from the backside of the semiconductor substrate to the frontside of the semiconductor substrate.

Abstract: The present disclosure, in some embodiments, relates to an image sensing integrated chip. The image sensing integrated chip includes a semiconductor substrate having sidewalls defining one or more trenches on opposing sides of a region of the semiconductor substrate. One or more dielectrics are disposed within the one or more trenches. The semiconductor substrate has a plurality of flat surfaces arranged between the one or more trenches. Adjacent ones of the plurality of flat surfaces define a plurality of triangular shaped protrusions and alternative ones of the plurality of flat surfaces are substantially parallel to one another, as viewed along a cross-sectional view.

Abstract: In some embodiments, the present disclosure relates to method for forming an image sensor integrated chip. The method includes forming a first photodetector region in a substrate and forming a second photodetector region in the substrate. A floating diffusion node is formed in the substrate between the first photodetector region and the second photodetector region. A pick-up well contact region is formed in the substrate. A first line intersects the floating diffusion node and the pick-up well contact region. One or more transistor gates are formed on the substrate. A second line that is perpendicular to the first line intersects the pick-up well contact region and the one or more transistor gates.

Abstract: In some embodiments, the present disclosure relates to an image sensor, including a first photodiode and a second photodiode disposed in a semiconductor substrate. A floating diffusion node is disposed along a frontside of the semiconductor substrate and between the first and second photodiodes. A partial backside deep trench isolation (BDTI) structure is disposed within the semiconductor substrate and between the first and second photodiodes. The partial BDTI extends from a backside of the semiconductor substrate and is spaced from the floating diffusion node. A full BDTI structure extends from the backside of the semiconductor substrate to the frontside of the semiconductor substrate.

Abstract: An igniter for a combustor of a turbomachine includes a fuel inlet in fluid communication with a mixing plenum. The mixing plenum is positioned upstream of a mixing channel. An air inlet is in fluid communication with the mixing plenum and an ignition source is in operative communication with the mixing channel. The igniter may include a mounting flange configured for coupling the igniter to the combustor. The ignition source may be positioned proximate to a downstream end of the mixing channel and upstream of the mounting flange. The mixing channel may define a venturi shape. The venturi shape includes a converging section between an upstream end of the mixing channel and a venturi throat.

Abstract: The present disclosure relates to neural network optimization methods and apparatuses in the field of artificial intelligence. One example method includes sampling preset hyperparameter search space to obtain multiple hyperparameter combinations. Multiple iterative evaluations are performed on the multiple hyperparameter combinations to obtain multiple performance results of each hyperparameter combination. Any iterative evaluation comprises obtaining at least one performance result of each hyperparameter combination, and if a hyperparameter combination meets a first preset condition, re-evaluating the hyperparameter combination to obtain a re-evaluated performance result of the hyperparameter combination. An optimal hyperparameter combination is determined. If the optimal hyperparameter combination does not meet a second preset condition, a preset model is updated, based on the multiple performance results of each hyperparameter combination, for next sampling.

Abstract: Various embodiments of the present disclosure are directed towards a capacitor structure comprising a plurality of first conductive layers that are vertically stacked over one another and overlie a substrate. The plurality of first conductive layers respectively contact an adjacent first conductive layer in a first connection region. A plurality of second conductive layers are respectively stacked between adjacent ones of the plurality of first conductive layers. The plurality of second conductive layers respectively contact an adjacent second conductive layer in a second connection region. A dielectric structure separates the plurality of first conductive layers and the plurality of second conductive layers. At least a portion of a lower first conductive layer in the plurality of first conductive layers directly underlies the second connection region.

Abstract: In some embodiments, a pixel sensor is provided. The pixel sensor includes a first photodetector arranged in a semiconductor substrate. A second photodetector is arranged in the semiconductor substrate, where a first substantially straight line axis intersects a center point of the first photodetector and a center point of the second photodetector. A floating diffusion node is arranged in the semiconductor substrate at a point that is a substantially equal distance from the first photodetector and the second photodetector. A pick-up well contact region is arranged in the semiconductor substrate, where a second substantially straight line axis that is substantially perpendicular to the first substantially straight line axis intersects a center point of the floating diffusion node and a center point of the pick-up well contact region.

Abstract: A method for forming a semiconductor image sensor includes following operation. A first substrate including a first bottom side and a first top side is provided. A first interconnect structure is disposed under the first bottom side of the first substrate. An insulating structure is formed over the first top side of the first substrate. A conductor penetrating the insulating structure and the first substrate is formed and a first bonding pad is formed in the insulating structure. A second substrate including a second bottom side and a second top side is provided with the second bottom side facing the first top side of the first substrate. A second interconnect structure is disposed under the second bottom side of the second substrate, and a second bonding pad is coupled to the second interconnect structure. The first bonding pad is bonded to the second bonding pad to form a first bonded structure.

Abstract: An igniter for a combustor of a turbomachine includes a fuel inlet in fluid communication with a mixing plenum. The mixing plenum is positioned upstream of a mixing channel. An air inlet is in fluid communication with the mixing plenum and an ignition source is in operative communication with the mixing channel. The igniter may include a mounting flange configured for coupling the igniter to the combustor. The ignition source may be positioned proximate to a downstream end of the mixing channel and upstream of the mounting flange. The mixing channel may define a venturi shape. The venturi shape includes a converging section between an upstream end of the mixing channel and a venturi throat.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming a semiconductor device, the method including forming a plurality of photodetectors in a substrate. A device isolation structure is formed within the substrate. The device isolation structure laterally wraps around the plurality of photodetectors. An outer isolation structure is formed within the substrate. The device isolation structure is spaced between sidewalls of the outer isolation structure. The device isolation structure and the outer isolation structure comprise a dielectric material.

Abstract: The present disclosure relates to a CMOS image sensor having a doped isolation structure separating a photodiode and a pixel device, and an associated method of formation. In some embodiments, the CMOS image sensor has a vertical transfer gate extending vertically from a front-side of a substrate to a first position within the substrate and a photodiode doped region disposed under and extending laterally toward one side of the vertical transfer gate. A doped lateral isolation region disposed along a top surface of the photodiode doped region, and a doped vertical isolation region disposed along a sidewall of the vertical transfer gate. A doped pixel device well is vertically above the doped lateral isolation region and separated from the vertical transfer gate by the doped vertical isolation region. A pixel device is disposed within the doped pixel device well at the front-side of the substrate.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor structure including a crack-stop structure disposed within a semiconductor substrate. The semiconductor substrate has a back-side surface and a front-side surface opposite the back-side surface. Photodetectors are disposed within the semiconductor substrate and are laterally spaced within a device region. An interconnect structure is disposed along the front-side surface. The interconnect structure includes a seal ring structure. A crack-stop structure is disposed within the semiconductor substrate and overlies the seal ring structure. The crack-stop structure continuously extends around the device region.