Abstract: A circuit, for a touch panel, comprising N touch signal processing circuits; a backup processing circuit; and a controller, coupled to the N touch signal processing circuits and the backup processing circuit, configured to determine whether one of the N touch signal processing circuits is failed and generate a determining result, and control the N touch signal processing circuits and the backup processing circuit to process N touch signals received from the touch panel to obtain N digital signals according to the determining result.

Abstract: A touch event processing circuit includes receiving circuits and an average circuit. Each of the receiving circuits includes an operation amplifier, a current processing circuit, and a touch event detection circuit. The operation amplifier receives an input signal from a touch panel, and outputs a first current signal and a second current signal. The current processing circuit processes the first current signal and the second current signal according to a first current average signal and a second current average signal, to generate a processed current signal. The touch event detection circuit detects a touch event according to the processed current signal. The average circuit receives first current signals and second current signals from the receiving circuits; performs an average operation upon the first current signals, to generate the first current average signal; and performs an average operation upon the second current signals, to generate the second current average signal.

Abstract: A high electron mobility transistor includes a substrate, a mesa structure disposed on the substrate, a passivation layer disposed on the mesa structure, and at least a contact structure disposed in the passivation layer and the mesa structure. The mesa structure includes a channel layer, a barrier layer on the channel layer, two opposite first edges extending along a first direction, and two opposite second edges extending along a second direction. The contact structure includes a body portion and a plurality of protruding portions. The body portion penetrates through the passivation layer. The protruding portions penetrate through the barrier layer and a portion of the channel layer. In a top view, the body portion overlaps the two opposite first edges of the mesa structure without overlapping the two opposite second edges of the mesa structure.

Abstract: A vapor deposition system is described. The vapor deposition system includes a reaction chamber and a reactant delivery subsystem coupled with the reaction chamber. The reaction chamber is configured to retain a substrate therein. The reactant delivery subsystem includes inlets, a pre-reaction region, and outlets. The inlets receive precursors and chalcogen precursor(s). The pre-reaction region is configured to receive the precursors from a portion of the inlets and to react at least a portion of the precursors to form modified precursor(s). The modified precursor(s) are more thermally stable than metal-containing precursor(s) of the precursors used to form the modified precursor(s). The outlets are coupled with the reaction chamber and the pre-reaction region. The outlets separately provide the modified precursor(s) and the chalcogen precursor(s) to the reaction chamber. The modified precursor(s) and the chalcogen precursor(s) react and form a chalcogen film on the substrate in the reaction chamber.

Abstract: A memory device is provided, including a memory array, a driver circuit, and recover circuit. The memory array includes multiple memory cells. Each memory cell is coupled to a control line, a data line, and a source line and, during a normal operation, is configured to receive first and second voltage signals. The driver circuit is configured to output at least one of the first voltage signal or the second voltage signal to the memory cells. The recover circuit is configured to output, during a recover operation, a third voltage signal, through the driver circuit to at least one of the memory cells. The third voltage signal is configured to have a first voltage level that is higher than a highest level of the first voltage signal or the second voltage signal, or lower than a lowest level of the first voltage signal or the second voltage signal.

Abstract: A light-emitting package, includes: a housing including an opening; a lead frame covered by the housing; a light-emitting device, mounted in the opening and electrically connected to the lead frame, the light-emitting device including: a substrate including: a base with a main surface; and a plurality of protrusions on the main surface, wherein the protrusion and the base include different materials; a semiconductor stack on the main surface, the semiconductor stack including a side wall, and wherein an included angle between the side wall and the main surface is an obtuse angle; wherein the main surface includes a peripheral area not covered by the semiconductor stack, and the peripheral area is devoid of the protrusion formed thereon; and a filling material filling in the opening and covering the light-emitting device.

Abstract: A semiconductor device includes a first channel region, a second channel region, and a first insulating fin, the first insulating fin being interposed between the first channel region and the second channel region. The first insulating fin includes a lower portion and an upper portion. The lower portion includes a fill material. The upper portion includes a first dielectric layer on the lower portion, the first dielectric layer being a first dielectric material, a first capping layer on the first dielectric layer, the first capping layer being a second dielectric material, the second dielectric material being different than the first dielectric material, and a second dielectric layer on the first capping layer, the second dielectric layer being the first dielectric material.

Abstract: A semiconductor structure includes an isolation feature formed in the semiconductor substrate and a first fin-type active region. The first fin-type active region extends in a first direction. A dummy gate stack is disposed on an end region of the first fin-type active region. The dummy, gate stack may overlie an isolation structure. In an embodiment, any recess such as formed for a source/drain region in the first fin-type active region will be displaced from the isolation region by the distance the dummy gate stack overlaps the first fin-type active region.

Abstract: The present disclosure provides a photoelectric device module and a manufacturing method thereof. The photoelectric device module includes a circuit module and a photoelectric conversion module. The circuit module includes a first electrode. The photoelectric conversion module is disposed on the circuit module, in which the photoelectric conversion module includes a second electrode, a photoactive layer, a light-transmitting electrode, and a light-transmitting substrate. The second electrode is electrically connected to the first electrode. The photoactive layer is disposed on the second electrode. The light-transmitting electrode is disposed on the photoactive layer. The light-transmitting substrate is disposed on the light-transmitting electrode.

Abstract: A method for forming a high electron mobility transistor is disclosed. A mesa structure having a channel layer and a barrier layer is formed on a substrate. The mesa structure has two first edges extending along a first direction and two second edges extending along a second direction. A passivation layer is formed on the substrate and the mesa structure. A first opening and a plurality of second openings connected to a bottom surface of the first opening are formed and through the passivation layer, the barrier layer and a portion of the channel layer. In a top view, the first opening exposes the two first edges of the mesa structure without exposing the two second edges of the mesa structure. A metal layer is formed in the first opening and the second openings thereby forming a contact structure.

Abstract: The present invention relates to a non-fullerene acceptor compound containing benzoselenadiazole, and organic optoelectronic devices comprising the same.

Abstract: An electronic device includes a substrate, a plurality of electronic components and a conductive material. The electronic components are arranged on the substrate, and the electronic components respectively include a lower electrode, a semiconductor layer and an upper electrode, and they are sequentially stacked on the substrate. The electronic components share the semiconductor layer, and the semiconductor layer forms a plurality of connecting channels through the semiconductor layer. The connecting channels are located between the upper electrode of the first electronic component in the electronic components and the lower electrode of the second electronic component in the electronic components. These connecting channels are processed by lasers of different powers. The conductive material is arranged in the connecting channel so that the upper electrode of the first electronic component is electrically connected to the lower electrode of the second electronic component.

Abstract: A semiconductor mixed material comprises an electron donor, a first electron acceptor and a second electron acceptor. The first electron donor is a conjugated polymer. The energy gap of the first electron acceptor is less than 1.4 eV. At least one of the molecular stackability, ?-?*stackability, and crystallinity of the second electron acceptor is smaller than the first electron acceptor. The electron donor system is configured to be a matrix to blend the first electron acceptor and the second electron acceptor. The present invention also provides an organic electronic device including the semiconductor mixed material.

Abstract: An organic optoelectronic device comprises a first electrode, an active layer and a second electrode. Active layer materials of the active layer comprise a block conjugated polymer materials which includes a structure of formula I: The polymer 1 is a p-type polymer with high energy gap, and the polymer 1 comprises a first electron donor and a first electron acceptor arranged alternately. The polymer 2 is a p-type polymer with low energy gap, and the polymer 2 comprises a second electron donor and a second electron acceptor arranged alternately. Wherein, o and p>0. The organic optoelectronic device of the present invention transfers carriers through the polymer 2 with low energy gap, and suppresses the recombination probability of carriers through the polymer 1 with high energy gap, thereby reducing the leakage current of the organic optoelectronic device.

Abstract: A method of patterning a semiconductor layer includes the following steps. The semiconductor layer is formed on a substrate. A photoresist layer is formed on the semiconductor layer. The photoresist layer is patterned to form an opening exposing an exposed region of the semiconductor layer. The exposed region of the semiconductor layer is dissolved with a solution to pattern the semiconductor layer, in which the solution includes a first organic solvent and a second organic solvent. The solubility of the semiconductor layer in the first organic solvent is greater than 1 mg/mL, and the solubility of the semiconductor layer in the second organic solvent is less than or equal to 1 mg/mL.

Abstract: The invention relates to a photodiode, like an photovoltaic (OPV) cell or photodetector (OPD), comprising, between the photoactive layer and an electrode, a hole selective layer (HSL) for modifying the work function of the electrode and/or the photoactive layer, wherein the HSL comprises a fluoropolymer and optionally a conductive polymer, and to a composition comprising such a fluoropolymer and a conductive polymer.

Abstract: Organic photovoltaic device comprises a first electrode, a first carrier transfer later, an active layer, a second carrier transfer layer and a second electrode. The first electrode is a transparent electrode. The active layer includes at least one electron donor, a first electron acceptor, and a second electron acceptor. Wherein, the electron donor is an organic polymer. The first electron acceptor is a crystalline material, and the self-molecule stacking distance of the first electron acceptor is less than 4 ?. The second electron acceptor is a crystal destruction material, and the second electron acceptor includes a fullerene derivative. The organic photovoltaic device of the present invention not only has a controllable morphology formation but also can enhance fill factor and improve power conversion efficiency.

Abstract: An electrode connection structure is provided and includes a substrate, a first electrode, a second electrode, a semiconductor layer, a third electrode, and a conductive block. The first electrode and the second electrode are located on the substrate. The semiconductor layer is located on the first electrode and the second electrode. The third electrode is on the semiconductor layer. The conductive block penetrates through the semiconductor layer and the third electrode and directly contacts the second electrode and the third electrode. A first upper surface of the conductive block and a second upper surface of the third electrode are in different planes.

Abstract: A method of patterning semiconductor layer includes the following operations. A first electrode and a second electrode are formed on a substrate. A patterned polymer layer with a first portion on a portion of the second electrode and a second portion on an edge portion of the substrate is formed on the substrate. A semiconductor layer is deposited on the patterned polymer layer, the substrate, and the first electrode. The first portion of the patterned polymer layer and the semiconductor layer on the first portion are removed to form a through-hole in the semiconductor layer that exposes the portion of the second electrode. A conductive block is deposited on the semiconductor layer and in the through-hole.

Abstract: Organic photoelectric device comprises a first electrode, a first carrier transfer layer, an active layer, a second carrier transfer layer and a second electrode. The first electrode is a transparent electrode. The active layer includes at least one organic semiconductor material including a structure such as Formula I: The second carrier transfer layer is composed between the active layer and the second electrode. When X1 and X2 are selected from one of Si, Ge and derivatives thereof, the active layer further includes an organic solvent, and the solubility of the organic solvent to the active layer is not less than 5 mg/mL. When X1 and X2 are selected from one of C and its derivatives, the active layer further includes an additive. The power conversion efficiency of the organic photoelectric device of the present invention can be up to more than 14%.