Abstract: The present invention relates to a structure of photodiode, which comprises a substrate, a first electrode, an electron transport layer, a photoactive layer, a filter layer, and a second electrode. The first electrode is disposed on the substrate. The electron transport layer is disposed on the first electrode. The photoactive layer is disposed on the electron transport layer. The photoactive layer has a first energy gap value. The filter layer is disposed on the photoactive layer and has a second energy gap value. The second electrode is disposed on the filter layer. The second energy gap value is greater than the first energy gap value. The ratio of the second energy gap value to the first energy gap value is an energy gap ratio. The energy gap ratio is greater than 1 and less than or equal to 3.

Abstract: An organic semiconductor device is revealed. The organic semiconductor device includes a first electrode, an electron transport layer, an active layer, a hole transport layer, and a second electrode. The active layer includes an electron donor and at least one electron acceptor. The energy barrier between HOMO level of the electron donor and the energy level of PEDOT:PSS or derivatives in the electron transport layer is less than 0.4 eV. The use of the organic semiconductor device and a formulation of materials for the active layer are also disclosed.

Abstract: An electronic device includes a substrate, a plurality of electronic components and a conductive material. The electronic components are arranged on the substrate, and the electronic components respectively include a lower electrode, a semiconductor layer and an upper electrode, and they are sequentially stacked on the substrate. The electronic components share the semiconductor layer, and the semiconductor layer forms a plurality of connecting channels through the semiconductor layer. The connecting channels are located between the upper electrode of the first electronic component in the electronic components and the lower electrode of the second electronic component in the electronic components. These connecting channels are processed by lasers of different powers. The conductive material is arranged in the connecting channel so that the upper electrode of the first electronic component is electrically connected to the lower electrode of the second electronic component.

Abstract: The invention relates to a photodiode, like an photovoltaic (OPV) cell or photodetector (OPD), comprising, between the photoactive layer and an electrode, a hole selective layer (HSL) for modifying the work function of the electrode and/or the photoactive layer, wherein the HSL comprises a fluoropolymer and optionally a conductive polymer, and to a composition comprising such a fluoropolymer and a conductive polymer.

Abstract: A semiconductor mixed material comprises an electron donor, a first electron acceptor and a second electron acceptor. The first electron donor is a conjugated polymer. The energy gap of the first electron acceptor is less than 1.4 eV. At least one of the molecular stackability, ?-?* stackability, and crystallinity of the second electron acceptor is smaller than the first electron acceptor. The electron donor system is configured to be a matrix to blend the first electron acceptor and the second electron acceptor. The present invention also provides an organic electronic device including the semiconductor mixed material.

Abstract: The present invention provides a polymer-polyoxometalate composite ink, which comprises a solvent, a polymer or an intertwined structure with more than one polymer and a polyoxometalate, wherein a weight ratio of the polymer or the intertwined structure with more than one polymer to the polyoxometalate is in the range from 1:0.001 to 1:0.09. The said polymer-polyoxometalate composite ink could be configured to produce a carrier transport film and an organic electronic device comprising the carrier transport film.

Abstract: The present invention relates to a non-fullerene acceptor compound containing benzoselenadiazole, and organic optoelectronic devices comprising the same.

Abstract: A wearable device and respiration sensing module are provided. The wearable device includes a first respiration sensing module and a second respiration sensing module. The first respiration sensing module is configured to sensing respiration of a user to obtain a first respiration information. The second respiration sensing module is configured to sensing respiration of the user to obtain a second respiration information. The second respiration sensing module includes a substrate, a first electrode, a second electrode and a stretchable conductive element. The first electrode and the second electrode are disposed on a first surface of the substrate. The stretchable conductive element is physically and electrically connected between the first electrode and the second electrode. The respiration of the user is judged according to the first respiration information and the second respiration information.

Abstract: A hole transporting material comprises a conductive polymer coil, and a plurality of transition metal oxide particles, which suspended and dispersed in the conductive polymer coil. Wherein the transition metal oxide particles are formed in the conductive polymer coil by a sol-gel reaction. The invention also disclosed a method of manufacturing a hole transporting material and an organic photodiode. The hole transporting material of the present invention can has a good match with an electron donor material of an active layer, so that the organic photodiode including the hole transporting material said above can have better power conversion efficiency.

Abstract: A hole transporting material comprises a conductive polymer coil, and a plurality of transition metal oxide particles, which suspended and dispersed in the conductive polymer coil. Wherein the transition metal oxide particles are formed in the conductive polymer coil by a sol-gel reaction. The invention also disclosed a method of manufacturing a hole transporting material and an organic photodiode. The hole transporting material of the present invention can has a good match with an electron donor material of an active layer, so that the organic photodiode including the hole transporting material said above can have better power conversion efficiency.

Abstract: Organic photovoltaic device comprises a first electrode, a first carrier transfer later, an active layer, a second carrier transfer layer and a second electrode. The first electrode is a transparent electrode. The active layer includes at least one electron donor, a first electron acceptor, and a second electron acceptor. Wherein, the electron donor is an organic polymer. The first electron acceptor is a crystalline material, and the self-molecule stacking distance of the first electron acceptor is less than 4 ?. The second electron acceptor is a crystal destruction material, and the second electron acceptor includes a fullerene derivative. The organic photovoltaic device of the present invention not only has a controllable morphology formation but also can enhance fill factor and improve power conversion efficiency.

Abstract: Organic photoelectric device comprises a first electrode, a first carrier transfer layer, an active layer, a second carrier transfer layer and a second electrode. The first electrode is a transparent electrode. The active layer includes at least one organic semiconductor material including a structure such as Formula I: The second carrier transfer layer is composed between the active layer and the second electrode. When X1 and X2 are selected from one of Si, Ge and derivatives thereof, the active layer further includes an organic solvent, and the solubility of the organic solvent to the active layer is not less than 5 mg/mL. When X1 and X2 are selected from one of C and its derivatives, the active layer further includes an additive. The power conversion efficiency of the organic photoelectric device of the present invention can be up to more than 14%.

Abstract: A circuit board assembly inspection method includes the following steps: measuring a geometrical characteristic value of a solder layer before soldering an electronic component to a circuit board and comparing the geometric characteristic value with a predetermined value and defining the grad of the solder layer according to a comparing result of the comparing step and performing a defective product process to the circuit board having an extremely bad solder layer, measuring a quality characteristic value of a solder joint layer after soldering the electronic component to the circuit board and comparing the quality characteristic value with a predetermined quality parameter value and then defining the grade of the solder joint layer according to a comparing result of the comparing step, manually inspecting the circuit board assembly having both an medium-grade solder layer a the poor solder joint layer.

Abstract: A device using parity for verification of data transmitted from a first device through a data line to a second device includes a processor and a memory. The data line includes first to fourth pins for transmitting data and fifth to eighth pins for transmitting parity information. The processor receives values of first to eighth pins, calculates sum of the values of combinations of the first to fourth pins for data and applies modular operations on results of the four combinations. Equality or non-equality with the parity values of the fifth to eighth pins is determined, and the second device is permitted to receive the data when the results correspond, the modular operation being a (mod 2) operation. A method applied to such device is also disclosed.

Abstract: A data transmission parity device for verifying data transmitted from a first device through a data line to a second device includes a processor and a memory. The data line includes an N number of signal pins for transmitting data and an (N+1)th signal pin for transmitting parity information. The processor is configured to receive and obtain a signal value of the N+1 signal pins, calculate a first sum of the signal value of the N+1 signal pins and apply a first modular operation on the first sum, determine whether a result of the first modular operation is equal to zero, and control the second device to reject the data when the result of the first modular operation is not equal to zero. The first modular operation and the second modular operation are both (mod 2) operations.

Abstract: The present invention provides a polymer-polyoxometalate composite ink, which comprises a solvent, a polymer or an intertwined structure with more than one polymer and a polyoxometalate, wherein a weight ratio of the polymer or the intertwined structure with more than one polymer to the polyoxometalate is in the range from 1:0.001 to 1:0.09. The said polymer-polyoxometalate composite ink could be configured to produce a carrier transport film and an organic electronic device comprising the carrier transport film.

Abstract: A device using parity for verification of data transmitted from a first device through a data line to a second device includes a processor and a memory. The data line includes first to fourth pins for transmitting data and fifth to eighth pins for transmitting parity information. The processor receives values of first to eighth pins, calculates sum of the values of combinations of the first to fourth pins for data and applies modular operations on results of the four combinations. Equality or non-equality with the parity values of the fifth to eighth pins is determined, and the second device is permitted to receive the data when the results correspond, the modular operation being a (mod 2) operation. A method applied to such device is also disclosed.

Abstract: A data transmission parity device for verifying data transmitted from a first device through a data line to a second device includes a processor and a memory. The data line includes an N number of signal pins for transmitting data and an (N+1)th signal pin for transmitting parity information. The processor is configured to receive and obtain a signal value of the N+1 signal pins, calculate a first sum of the signal value of the N+1 signal pins and apply a first modular operation on the first sum, determine whether a result of the first modular operation is equal to zero, and control the second device to reject the data when the result of the first modular operation is not equal to zero. The first modular operation and the second modular operation are both (mod 2) operations.

Abstract: A circuit board assembly inspection method includes the following steps: measuring a geometrical characteristic value of a solder layer before soldering an electronic component to a circuit board and comparing the geometric characteristic value with a predetermined value and defining the grad of the solder layer according to a comparing result of the comparing step and performing a defective product process to the circuit board having an extremely bad solder layer, measuring a quality characteristic value of a solder joint layer after soldering the electronic component to the circuit board and comparing the quality characteristic value with a predetermined quality parameter value and then defining the grade of the solder joint layer according to a comparing result of the comparing step, manually inspecting the circuit board assembly having both an medium-grade solder layer a the poor solder joint layer.