Abstract: Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer, wherein the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first conductivity type semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second conductivity type semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.

Abstract: A light-emitting diode device having two electrode pads for connecting to an external power comprises a substrate; a plurality of light-emitting diode units on the substrate; and a plurality of conductive connecting structures electrically connecting the plurality of light-emitting diode units; wherein the two electrode pads are encircled by the plurality of light-emitting diode units.

Abstract: A method of forming a light-emitting diode includes: providing a substrate having one or more first openings passing through the substrate; forming a sacrificial layer on the substrate; forming an epitaxial layer on the sacrificial layer; connecting a supporting substrate with the epitaxial layer; and separating the substrate from the epitaxial layer by selectively etching the sacrificial layer.

Abstract: A semiconductor light-emitting device comprises a semiconductor stack comprising a side, a first surface and a second surface opposite to the first surface, wherein the semiconductor stack further comprises a conductive via extending from the first surface to the second surface; a transparent conductive layer formed on the second surface; a first pad portion and a second pad portion formed on the first surface and electrically connected to the semiconductor stack; and an insulating layer formed between the first pad portion and the semiconductor stack and between the second pad portion and the semiconductor stack.

Abstract: A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.

Abstract: A light-emitting device disclosed herein comprises a substrate, an active layer formed on the substrate and including a first quantum well, a second quantum well and a barrier layer disposed between the first quantum well and the second quantum well. The barrier layer includes a first region adjacent to the first quantum well, a third region adjacent to the second quantum well and a second region disposed between the first region and the third region and comprising Sb.

Abstract: An optoelectronic device comprises a semiconductor stack having a first surface, a contact layer having a first pattern on the first surface for ohmically contacting the semiconductor stack, a void in the semiconductor stack and surrounding the contact layer, and a mirror structure on the first surface and covering the contact layer, wherein the first surface has a first portion which is not covered by the contact layer and a second portion covered by the contact layer, and the first portion is rougher than the second portion.

Abstract: A touch input device includes a body and a sensing module. The body has an external surface which encloses an accommodation space. The sensing module is disposed in the accommodation space and includes a sensing unit and a signal operation unit. The sensing unit generates a sensing signal. The signal operation unit generates a surface result signal according to the sensing signal to adjust a surface character of the external surface.

Abstract: A light-emitting diode device having two electrode pads for connecting to an external power comprises a substrate; a plurality of light-emitting diode units on the substrate; and a plurality of conductive connecting structures electrically connecting the plurality of light-emitting diode units; wherein the two electrode pads are encircled by the plurality of light-emitting diode units.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; and a first light-emitting unit comprising a plurality of light-emitting diodes electrically connected to each other on the substrate. A first light-emitting diode in the first light-emitting unit comprises a first semiconductor layer with a first conductivity-type, a second semiconductor layer with a second conductivity-type, and a light-emitting stack formed between the first and second semiconductor layers. The first light-emitting diode in the first light-emitting unit further comprises a first connecting layer on the first semiconductor layer for electrically connecting to a second light-emitting diode in the first light-emitting unit; a second connecting layer, separated from the first connecting layer, formed on the first semiconductor layer; and a third connecting layer on the second semiconductor layer for electrically connecting to a third light-emitting diode in the first light-emitting unit.

Abstract: A touch stylus and operating method thereof are disclosed. The touch stylus includes a piezoelectric unit, a magnet unit, and a coil unit. The piezoelectric unit is formed by a piezoelectric material. The magnet unit is coupled to the piezoelectric unit. The coil unit is evenly wound on the outer of the magnet unit. When a tip of the touch stylus is forced and generates a vibration, the piezoelectric material of the piezoelectric unit is deformed by force to generate a piezoelectric current. When the touch stylus is shaken, the coil unit and the magnet unit will generate relative movement to change the distance between them and the magnetic flux will be changed, the coil unit will generate an induced current.

Abstract: A hydrostatic rail guide includes a guide rail, a guide carriage, a hydrostatic supply device, a measurement device and a controller. The guide carriage is hydrostatically mounted on the guide rail and has a hydrostatic channel filled with oil. The oil keeps the guide carriage and the guide rail at a gap. The hydrostatic supply device is adapted for supplying the oil to the hydrostatic channel and adjusting the pressure of the oil. The measurement device is installed on the guide carriage and adapted for detecting the gap between the guide carriage and the guide rail and for producing a distance signal of the measured gap. The controller is connected to the hydrostatic supply device and the measurement device. The controller is adapted for controlling the hydrostatic supply device, based on the distance signal, in order to adjust the hydrostatic pressure of the oil after being pressurized.

Abstract: A touch input device includes a touch end, a sensing module, and a receiving module. The sensing module includes a sensing unit and a signal operation unit. The sensing unit detects a relative angle between the touch end and a display touch surface to generate a motion signal. The signal operation unit is coupled with the sensing unit and generates a result signal according to the motion signal. The receiving module includes a receiving end and a demodulator unit. The receiving end receives the result signal; the demodulator is coupled with the receiving end, wherein the receiving end transmits the result signal to the demodulator unit, and the demodulator unit generates a function signal according to the result signal.

Abstract: Disclosed is a light-emitting device comprising: a light-emitting stack with a length and a width comprising: a first conductivity type semiconductor layer; an active layer on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer on the active layer; a conductive layer with a width greater than the width of the first conductivity type semiconductor layer and under the first conductivity type semiconductor layer, the conductive layer comprising a first overlapping portion which overlaps the first conductivity type semiconductor layer and a first extending portion which does not overlap the first conductivity type semiconductor layer; a transparent conductive layer with a width greater than the width of the second conductivity type semiconductor layer over the second conductivity type semiconductor layer, the transparent conductive layer comprising a second overlapping portion which overlaps the second conductivity type semiconductor layer and a second extending por

Abstract: A light-emitting device includes a plurality of physically separated light-emitting units formed on a single substrate: a contact layer formed on a first side of the light-emitting units ; a first electrode formed on a second side of the light-emitting units: a conductive post formed between the first electrode and the contact layer; an electrical connection structure electrically connecting a first one of the light-emitting units with another a second one of the light-emitting units; a reflective layer formed between the first one of light-emitting units and the first electrode; a first conductive layer comprising a plurality of contacts formed between the first one of the light-emitting units and the reflective layer; and a second conductive layer formed between the reflective layer and the first conductive layer.

Abstract: The present invention relates to a tool change device, which comprises: a base, being arranged for enabling the same to move reciprocatingly between a first position and a second position; a guiding block, formed with a first engaging part and a second engaging part that are serially connected to each other; a lever, formed with a pivot point, a first end and a second end that are arranged opposite to each other while allowing the pivot point to be arranged therebetween; and a spindle, configured with a drive mechanism to be used for connecting the spindle to a tool, being disposed mounting on the base for allowing the same to move in synchronization with the reciprocating movement of the base; wherein, the lever is pivotally coupled to the base by the pivot point thereof for enabling the lever to move in synchronization with the reciprocating movement of the base.

Abstract: A semiconductor optoelectronic device comprises an operating substrate; a semiconductor epitaxial stack unit disposed on the operating substrate comprising a first semiconductor material layer having a first electrical conductivity disposed on the operating substrate and a second semiconductor material layer having a second electrical conductivity disposed on the first semiconductor material layer; a transparent conductive layer disposed on the second semiconductor material layer, wherein the transparent conductive layer comprises a first surface, a directly contacting part disposed on the first surface and directly contacting with the second semiconductor material layer, a second surface substantially parallel with the first surface, and a directly contacting corresponding part disposed on the second surface corresponding to the directly contacting part; and a first electrode disposed on the operating substrate and electrically connected with the semiconductor epitaxial stack by the transparent conductive la

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprise a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active formed between the first-type semiconductor layer and the second-type semiconductor layer and emitting a light; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface; wherein the critical angle of the light at the first interface is larger than that at the second interface; and wherein the reflective structure ohmically contacts the first-type semiconductor layer at the first interface.

Abstract: A two dimensional array light-emitting diode device is disclosed, which includes a transparent substrate including a first surface; a plurality of adjacent light-emitting diode units arranged on the first surface, wherein each of the light-emitting diode units including a plurality of sides and a circumference; and a plurality of conductive connecting structures arranged on the first surface, electrically connecting the plurality of light-emitting diode units mentioned above; wherein the sides of each of the light-emitting diode units have a plurality of vertical distances between the closest light-emitting diode units, and when the plurality of vertical distances larger than 50 ?m, the sides are not near the closest light-emitting diode units; wherein the ratio of the total length of the sides not near the light-emitting diode units of each light-emitting diode unit and the circumference of the light-emitting diode unit is larger than 50%.