Abstract: A method for manufacturing semiconductor light-emitting devices comprising the steps of: providing a multi-layer semiconductor film comprising a surface; roughening the surface of the multi-layer semiconductor film to form a scattering surface; re-growing a semiconductor layer on the scattering surface; and roughening the semiconductor layer to form a sub-scattering portion on the scattering surface; wherein the sub-scattering portion is structurally smaller than the scattering surface.

Abstract: A method of forming a light-emitting diode includes: providing a substrate having one or more first openings passing through the substrate; forming a sacrificial layer on the substrate; forming an epitaxial layer on the sacrificial layer; connecting a supporting substrate with the epitaxial layer; and separating the substrate from the epitaxial layer by selectively etching the sacrificial layer.

Abstract: A semiconductor optoelectronic device comprises an operating substrate; a semiconductor epitaxial stack unit disposed on the operating substrate comprising a first semiconductor material layer having a first electrical conductivity disposed on the operating substrate and a second semiconductor material layer having a second electrical conductivity disposed on the first semiconductor material layer; a transparent conductive layer disposed on the second semiconductor material layer, wherein the transparent conductive layer comprises a first surface, a directly contacting part disposed on the first surface and directly contacting with the second semiconductor material layer, a second surface substantially parallel with the first surface, and a directly contacting corresponding part disposed on the second surface corresponding to the directly contacting part; and a first electrode disposed on the operating substrate and electrically connected with the semiconductor epitaxial stack by the transparent conductive la

Abstract: A light-emitting device is disclosed and comprises: a transparent substrate; a semiconductor light-emitting stack on the transparent substrate, wherein the semiconductor light-emitting stack comprises a first semiconductor layer close to the transparent substrate, a second semiconductor layer away from the transparent substrate, and a light-emitting layer capable of emitting a light disposed between the first semiconductor layer and the second semiconductor layer; and a bonding layer between the transparent substrate and the semiconductor light-emitting stack, wherein the bonding layer has a gradually changed refractive index, and each of critical angles at the bonding layer and the transparent substrate for the light emitted from the light-emitting layer towards the transparent substrate is larger than 35 degrees.

Abstract: An equipment information security device is provided. The equipment information security device is installed on an equipment with confidential information, wherein the equipment or the device has a security interface, the device comprises: a fitting which is worn by a staff and combined with an electronic tag with or without authority to the corresponding equipment; a tag reader, which detects the electronic tag within a detecting area corresponding to the security interface; and an authority processing unit, which links to the tag reader: wherein the authority processing unit sets the security interface to an operation state and enables the security interface when there are only the authorized electronic tags being detected in the detecting area, and the authority processing unit sets the security interface to a security state and disables the security interface when one or more unauthorized electronic tags are detected in the detecting area.

Abstract: A method for manufacturing semiconductor light-emitting devices comprising the steps of: providing a multi-layer semiconductor film comprising a surface; roughening the surface of the multi-layer semiconductor film to form a scattering surface; re-growing a semiconductor layer on the scattering surface; and roughening the semiconductor layer to form a sub-scattering portion on the scattering surface; wherein the sub-scattering portion is structurally smaller than the scattering surface.

Abstract: The present invention relates to a use of Glycine N-methyltransferase (GNMT) in treating or preventing fatty liver related disease, such as nonalcoholic fatty liver disease (NAFLD) or hepatocellular carcinoma (HCC). The use of GNMT for treating or preventing fatty liver diseases is achieved by enhancing GNMT-NPC2 interaction, and thus decreasing or preventing the accumulation of lipid and cholesterol in hepatic cells or tissues.

Abstract: A hydrostatic rail guide includes a guide rail, a guide carriage, a hydrostatic supply device, a measurement device and a controller. The guide carriage is hydrostatically mounted on the guide rail and has a hydrostatic channel filled with oil. The oil keeps the guide carriage and the guide rail at a gap. The hydrostatic supply device is adapted for supplying the oil to the hydrostatic channel and adjusting the pressure of the oil. The measurement device is installed on the guide carriage and adapted for detecting the gap between the guide carriage and the guide rail and for producing a distance signal of the measured gap. The controller is connected to the hydrostatic supply device and the measurement device. The controller is adapted for controlling the hydrostatic supply device, based on the distance signal, in order to adjust the hydrostatic pressure of the oil after being pressurized.

Abstract: The present invention relates to Glycine N-methyltransferase (GNMT) animal model and use thereof.

Abstract: A light-emitting device includes a first electrode; a light-emitting stacked layer on the first electrode; a first contact layer on the light-emitting stacked layer, wherein the first contact layer includes a first contact link and a plurality of first contact lines connected to the first contact link; a first conductive post in the light-emitting stacked layer and electrically connecting the first electrode and the first contact layer; and a passivation layer between the first conductive post and the light-emitting stacked layer.

Abstract: An illumination apparatus is disclosed in the invention. The illumination apparatus includes a cavity with a diffusion surface, a light source, a light-spreading device, and at least one optically-conditioning surface with a wave-like array formed thereon. The light-spreading device and the optically-conditioning surface spread the light generated by the light source. The light-spreading device includes a wing-shaped protrusion part, a light incident surface, a recess located away from the light incident surface, and an optically-conditioning surface including a wave-like array, wherein the wave-like array has a wavefront direction.

Abstract: A light-emitting device disclosed herein comprises a substrate, an active layer formed on the substrate and including a first quantum well, a second quantum well and a barrier layer disposed between the first quantum well and the second quantum well. The barrier layer includes a first region adjacent to the first quantum well, a third region adjacent to the second quantum well and a second region disposed between the first region and the third region and comprising Sb.

Abstract: The application provides a light-emitting diode array, including: a first light-emitting diode including a first area; a second area; a first isolation path between the first area and the second area, and the first isolation path including an electrode isolation layer; and an electrode contact layer covering the first area; a second light-emitting diode including a semiconductor stack layer; and a second electrical bonding pad on the semiconductor stack layer; and a second isolation path between the first light-emitting diode and the second light-emitting diode, wherein the second isolation path includes an electrical connecting structure electrically connected to the first light-emitting diode and the second light-emitting diode.

Abstract: A light-emitting device includes a first electrode; a light-emitting stacked layer on the first electrode; a first contact layer on the light-emitting stacked layer, wherein the first contact layer includes a first contact link and a plurality of first contact lines connected to the first contact link; a first conductive post in the light-emitting stacked layer and electrically connecting the first electrode and the first contact layer; and a passivation layer between the first conductive post and the light-emitting stacked layer.

Abstract: A process for controlling the composition of an xBOB so that the xBOB will yield an oxygenate-containing gasoline which precisely meets desired specifications when mixed with the desired amount of oxygenate. The process involves blending a plurality of blendstocks to produce an xBOB, withdrawing a sample of the xBOB, obtaining spectroscopic measurements for the sample, applying mathematical models that were based on correlation of xBOB spectra to associated oxygenate-containing gasoline properties, to predict laboratory analysis results for oxygenate-containing gasoline properties, and using the analysis results to control and optimize the blending process.

Abstract: An optoelectronic device includes a base part and a lens cap. The base part has an optoelectronic chip mounted thereon. The lens cap is mounted over the optoelectronic chip and includes a metallic hollow cylindrical part and a plastic inner cylindrical part. The hollow cylindrical part has an opening on a top thereof. The inner cylindrical part is firmly coupled within the hollow cylindrical part, and the inner cylindrical part has a lens part located within the opening and at least three aligning members in contact with an upper circumference of the base part so as to align the lens part with the optoelectronic chip.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; and a first light-emitting unit comprising a plurality of light-emitting diodes electrically connected to each other on the substrate. A first light-emitting diode in the first light-emitting unit comprises a first semiconductor layer with a first conductivity-type, a second semiconductor layer with a second conductivity-type, and a light-emitting stack formed between the first and second semiconductor layers. The first light-emitting diode in the first light-emitting unit further comprises a first connecting layer on the first semiconductor layer for electrically connecting to a second light-emitting diode in the first light-emitting unit; a second connecting layer, separated from the first connecting layer, formed on the first semiconductor layer; and a third connecting layer on the second semiconductor layer for electrically connecting to a third light-emitting diode in the first light-emitting unit.

Abstract: Disclosed is a light-emitting device comprising: a light-emitting stack with a length and a width comprising: a first conductivity type semiconductor layer; an active layer on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer on the active layer; a conductive layer with a width greater than the width of the first conductivity type semiconductor layer and under the first conductivity type semiconductor layer, the conductive layer comprising a first overlapping portion which overlaps the first conductivity type semiconductor layer and a first extending portion which does not overlap the first conductivity type semiconductor layer; a transparent conductive layer with a width greater than the width of the second conductivity type semiconductor layer over the second conductivity type semiconductor layer, the transparent conductive layer comprising a second overlapping portion which overlaps the second conductivity type semiconductor layer and a second extending por

Abstract: A light-emitting device comprises a substrate; a semiconductor stack comprising a first type semiconductor layer, a second type semiconductor layer and an active layer formed between the first type semiconductor layer and the second type semiconductor layer; a bonding layer formed between the substrate and the semiconductor stack; and a plurality of buried electrodes physically buried in the first type semiconductor layer.

Abstract: A two dimensional array light-emitting diode device is disclosed, which includes a transparent substrate including a first surface; a plurality of adjacent light-emitting diode units arranged on the first surface, wherein each of the light-emitting diode units including a plurality of sides and a circumference; and a plurality of conductive connecting structures arranged on the first surface, electrically connecting the plurality of light-emitting diode units mentioned above; wherein the sides of each of the light-emitting diode units have a plurality of vertical distances between the closest light-emitting diode units, and when the plurality of vertical distances larger than 50 ?m, the sides are not near the closest light-emitting diode units; wherein the ratio of the total length of the sides not near the light-emitting diode units of each light-emitting diode unit and the circumference of the light-emitting diode unit is larger than 50%.