Abstract: A glove has a body, a side mirror pad and a side mirror. The body has a palm segment having a palm back surface and a wrist segment connected to the palm segment. The side mirror pad is connected to the palm back surface of the palm segment of the body and has a mirror face, a securing end and a connecting end. The securing end is connected to the palm back surface of the palm segment of the body. The connecting end is selectively connected detachably to the securing end and the palm back surface of the palm segment. The side mirror is mounted on the mirror face of the side mirror pad.

Abstract: The invention provides various ionic and non-ionic photoacid generator compounds. Photoresist compositions that include the novel ionic and non-ionic photoacid generator compounds are also provided. The invention further provides methods of making and using the photoacid generator compounds and photoresist compositions disclosed herein. The compounds and compositions are useful as photoactive components in chemically amplified resist compositions for various microfabrication applications.

Abstract: The invention provides various ionic and non-ionic photoacid generator compounds. Photoresist compositions that include the novel ionic and non-ionic photoacid generator compounds are also provided. The invention further provides methods of making and using the photoacid generator compounds and photoresist compositions disclosed herein. The compounds and compositions are useful as photoactive components in chemically amplified resist compositions for various microfabrication applications.

Abstract: A tree-based node insertion method and a memory device are disclosed in embodiments of the present invention. The tree-based node insertion method includes: according to the key value of a node to be inserted, searching in a primary tree for the nearest node whose key value is smaller than and the most approximate to the key value of the node to be inserted; judging whether the current secondary tree is full, and if so, selecting a node from the current secondary tree as a split node, transferring all the nodes on the right of the split node in the current secondary tree to the new secondary tree, and if not, inserting the node to be inserted into the current secondary tree.

Abstract: The present invention relates to an organic spin coatable antireflective coating composition comprising a polymer, a linking component, a crosslinker, and an acid generator. The invention further relates to a process for imaging the present composition.

Abstract: A device for protecting data stored in a static random access memory (SRAM) is provided. More particularly, a device for protecting SRAM data including an SRAM data erasing circuit, which erases memory stored in an SRAM at once when illegal separation from a system is detected. The device for protecting SRAM data includes: a power switching circuit for outputting electrical power supplied from an external power supply or a back-up battery power supply depending on whether the external power supply is supplying the electrical power or not; and an SRAM data erasing circuit for supplying the electrical power output from the power switching circuit to a power input terminal of a SRAM or grounding the power input terminal of the SRAM, in response to a connecter connection signal. The device can prevent illegal leakage of SRAM data by erasing the data stored in the SRAM when the SRAM is illegally separated from a system according to the switch setting of the SRAM data erasing circuit.

Abstract: A tamper detection method and a data storage device using the same are provided. The tamper detection method includes sensing a value of pressure applied to a data storage device using a pressure sensor, comparing the sensed pressure value with an initial pressure value sensed at an initial operation time of the data storage device, and detecting malicious tamper by comparing a threshold pressure value varying with the number of loads applied to the data storage device when the sensed pressure value is smaller than the initial pressure value.

Abstract: A semiconductor device including at least one conductive structure is provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal salicide layer and a protection layer. The refractory metal salicide layer is disposed over the silicon-containing conductive layer. The protection layer is disposed over the refractory metal salicide layer. Another semiconductor device including at least one conductive structure is also provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal alloy salicide layer and a protection layer. The refractory metal alloy salicide layer is disposed over the silicon-containing conductive layer. The refractory metal alloy salicide layer is formed from a reaction of silicon of the silicon-containing conductive layer and a refractory metal alloy layer which includes a first refractory metal and a second refractory metal. The protection layer is disposed over the refractory metal alloy salicide layer.

Abstract: The invention provides various photoacid generator compounds and ionic components thereof. Photoresist compositions that include the ions and non-ionic photoacid generator compounds are also provided. The invention further provides methods of making and using the photoacid generator compounds and photoresist compositions disclosed herein. The compounds and compositions are useful as photoactive components in chemically amplified resist compositions for use in, for example, various microfabrication applications.

Abstract: A NLU system includes a rules-based grammar for slots in a schema and a statistical model for preterminals. A training system is also provided.

Abstract: A method for forming a metal oxide semiconductor (MOS) transistor is provided. First, a gate structure is formed over a substrate. Then, offset spacers are formed on respective sidewalls of the gate structure. A first ion implantation process is performed to form a lightly doped drain (LDD) in the substrate beside the gate structure. Other spacers are formed on respective sidewalls of the offset spacers. Thereafter, a second ion implantation process is performed to form source/drain region in the substrate beside the spacers. Then, a metal silicide layer is formed on the surface of the source and the drain. An oxide layer is formed on the surface of the metal silicide layer. The spacers are removed and an etching stop layer is formed on the substrate. With the oxide layer over the metal silicide layer, the solvent for removing the spacers is prevented from damaging the metal silicide layer.

Abstract: A method of fabricating a semiconductor device is provided. The method includes forming a refractory metal alloy layer over a silicon-containing conductive layer. The refractory metal alloy layer is constituted of a first refractory metal and a second refractory metal. Thereafter, a cap layer is formed on the refractory metal alloy layer. A thermal process is performed so that the refractory metal alloy layer reacts with silicon of the silicon-containing conductive layer to form a refractory metal alloy salicide layer. Afterwards, an etch process with an etch solution is performed to removes the cap layer and the refractory metal alloy layer which has not been reacted and to form a protection layer on the refractory metal alloy salicide layer.

Abstract: A semiconductor device having nickel silicide and a method for fabricating nickel silicide. A semiconductor substrate having a plurality of doped regions is provided. Subsequently, a nickel layer is formed on the semiconductor substrate, and a first rapid thermal process (RTP) is performed to react the nickel layer with the doped regions disposed there under. Thereafter, the unreacted nickel layer is removed, and a second rapid thermal process is performed to form a semiconductor device having nickel silicide. The second rapid thermal process is a spike anneal process whose process temperature is between 400 and 600° C.

Abstract: An apparatus and method for controlling a packet transfer period of key resynchronization information in an encryption communication system are provided. The encryption communication apparatus includes a receiving means that computes a packet loss ratio and a network transfer delay time through a received packet when the packet is received and generates network status report information for a packet size and a packet transfer period of key resynchronization information using the packet loss ratio and the network transfer delay time, and a transmitting means that transmits a packet of the key resynchronization information in the transfer period by controlling the packet size and the packet transfer period of the key resynchronization information according to the network status report information received from the receiving means when data is input.

Abstract: Provided are a system and method for distributing a group key for a video conference using a one-time password in a video conference system. The method includes: when a video terminal is required to participate in a video conference, generating a challenge value and a response value corresponding to the video terminal; encrypting a group key corresponding to the video conference with the response value, and transmitting the encrypted group key and the challenge value to the video terminal; and causing the video terminal to participate in the video conference in response to an acknowledgement message from the video terminal. This results in high user friendliness and high-level security.

Abstract: A device for protecting data stored in a static random access memory (SRAM) is provided. More particularly, a device for protecting SRAM data including an SRAM data erasing circuit, which erases memory stored in an SRAM at once when illegal separation from a system is detected. The device for protecting SRAM data includes: a power switching circuit for outputting electrical power supplied from an external power supply or a back-up battery power supply depending on whether the external power supply is supplying the electrical power or not; and an SRAM data erasing circuit for supplying the electrical power output from the power switching circuit to a power input terminal of a SRAM or grounding the power input terminal of the SRAM, in response to a connecter connection signal. The device can prevent illegal leakage of SRAM data by erasing the data stored in the SRAM when the SRAM is illegally separated from a system according to the switch setting of the SRAM data erasing circuit.

Abstract: The invention provides various ionic and non-ionic photoacid generator compounds. Photoresist compositions that include the novel ionic and non-ionic photoacid generator compounds are also provided. The invention further provides methods of making and using the photoacid generator compounds and photoresist compositions disclosed herein. The compounds and compositions are useful as photoactive components in chemically amplified resist compositions for various microfabrication applications.