Abstract: A method for fabricating a semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) on a MRAM region of a substrate, forming a first inter-metal dielectric (IMD) layer around the MTJ, forming a patterned mask on a logic region of the substrate, performing a nitridation process to transform part of the first IMD layer to a nitride layer, forming a first metal interconnection on the logic region, forming a stop layer on the first IMD layer, forming a second IMD layer on the stop layer, and forming a second metal intercom in the second IMD layer to connect to the MTJ.

Abstract: Compositions and methods for reducing complement activation by introducing one or more alterations into a complement component 3 (C3) polynucleotide in a cell. In particular embodiments, the disclosure features a base editor system (e.g., a fusion protein or complex comprising a programmable DNA binding protein, a nucleobase editor, and gRNA) for modifying a C3 polynucleotide, where the modification is associated with reduced expression, and/or reduced activity of the C3 polypeptide encoded by the polynucleotide.

Abstract: Various embodiments of the present application are directed towards an integrated chip structure. The integrated chip structure includes a bottom electrode over a substrate, a top electrode over the bottom electrode, and a capacitor insulator structure between the bottom electrode and the top electrode. The capacitor insulator structure includes a first dielectric layer, a second dielectric layer over the first dielectric layer, and a third dielectric layer over the second dielectric layer. The first dielectric layer includes a first dielectric material. The second dielectric layer includes a second dielectric material that is different than the first dielectric material. The second dielectric material is an amorphous solid. The third dielectric layer includes the first dielectric material.

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a first inter-metal dielectric (IMD) layer on a substrate and a metal interconnection in the first IMD layer, forming a magnetic tunneling junction (MTJ) and a top electrode on the metal interconnection, forming a spacer adjacent to the MTJ and the top electrode, forming a second IMD layer around the spacer, forming a cap layer on the top electrode, the spacer, and the second IMD layer, and then patterning the cap layer to form a protective cap on the top electrode and the spacer.

Abstract: A display panel, a display apparatus, and a method for manufacturing a display panel. The display panel includes a substrate, an isolation structure, a light-emitting functional layer, and a first encapsulation layer, and the isolation structure is provided on a side of the substrate, and encloses and forms an opening structure. The light-emitting functional layer is provided on a side of the substrate and includes a plurality of light-emitting units provided within opening structures. The first encapsulation layer is provided on a side of the light-emitting functional layer away from the substrate and includes a plurality of encapsulation portions corresponding to the light-emitting units. Thicknesses of the encapsulation portions corresponding to at least a part of the light-emitting units having different light-emitting colors are different. In the embodiments of the present application, usage reliability of the display panel may be improved.

Abstract: A display panel, including: a base plate; a plurality of first electrodes being distributed in an array on a side of the base plate and having first edge areas; an isolation structure, provided on a side of the base plate, located on a same side of the base plate as the first electrodes, enclosing a plurality of isolation openings and insulated from the first electrodes, at least part of which are exposed from the isolation openings, the isolation structure includes isolation walls with first surfaces away from the base plate and second surfaces facing the base plate, as well as first side surfaces connecting the first surfaces and the second side surfaces, and at least part of orthographic projections of the first edge areas on the base plate are staggered with orthographic projections of the first side surface on the base plate.

Abstract: A display panel, a method for manufacturing a display panel, and a display apparatus. The display panel includes a display region, a non-display region at least partially surrounding the display region, and further includes a base plate, a wiring layer, a light-emitting layer, and an isolation structure. The wiring layer is located on a side of the base plate and includes a metal layer located in the display region and a signal line layer located in the non-display region. The light-emitting layer is located on a side of the wiring layer away from the base plate and includes a plurality of light-emitting units. The isolation structure is located on a side of the wiring layer away from the base plate and is provided with an isolation opening configured to accommodate the light-emitting unit.

Abstract: A fabricating method of a non-enzyme sensor element includes a printing step, a coating step and an electroplating step. In the printing step, a conductive material is printed on a surface of a substrate to form a working electrode, a reference electrode and an auxiliary electrode, and a porous carbon material is printed on the working electrode to form a porous carbon layer. In the coating step, a graphene film material is coated on the porous carbon layer of the working electrode to form a graphene layer. In the electroplating step, a metal is electroplated on the graphene layer by a pulse constant current to form a catalyst layer including a metal oxide.

Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. An alignment process is performed on a first semiconductor workpiece and a second semiconductor workpiece by virtue of a plurality of workpiece pins. The first semiconductor workpiece is bonded to the second semiconductor workpiece. A shift value is determined between the first and second semiconductor workpieces by virtue of a first plurality of alignment marks on the first semiconductor workpiece and a second plurality of alignment marks on the second semiconductor workpiece. A layer of an integrated circuit (IC) structure is formed over the second semiconductor workpiece based at least in part on the shift value.

Abstract: In an embodiment, a system is provided in which the private key is managed in hardware and is not visible to software. The system may provide hardware support for public key generation, digital signature generation, encryption/decryption, and large random prime number generation without revealing the private key to software. The private key may thus be more secure than software-based versions. In an embodiment, the private key and the hardware that has access to the private key may be integrated onto the same semiconductor substrate as an integrated circuit (e.g. a system on a chip (SOC)). The private key may not be available outside of the integrated circuit, and thus a nefarious third party faces high hurdles in attempting to obtain the private key.

Abstract: A laptop computer including a host, a movable door, a display, an input module, and a fan is provided. The host has a first surface and a second surface opposite to each other. The movable door is disposed on the second surface. The display is pivoted to the host to be folding on the first surface or unfolding from the first surface. The input module is disposed on the first surface. The fan is disposed in the host, and the movable door covers the fan. When the movable door is removed from the fan, an impeller of the fan is exposed from the host via the second surface.

Abstract: A depth camera capable of measuring the oblique velocity of an object is provided, wherein a depth camera capable of measuring the lateral velocity of an object includes a depth camera body, a first configuration file, and a lateral velocity calculation system. The lateral velocity calculation system includes: first image-processing software for recording a first depth distance at which images are taken of an object and for calculating the number of pixels corresponding to a lateral movement of the object and the duration of the lateral movement; and lateral velocity calculation software for calculating the lateral velocity of the object. The depth camera capable of measuring the oblique velocity of an object allows the lateral/longitudinal/oblique velocity of an object to be measured in real time using image-related techniques.

Abstract: The present disclosure relates to a silicon/perovskite tandem solar cell and a preparation method thereof and belongs to the technical field of perovskite tandem cells. The silicon/perovskite tandem solar cell includes a silicon bottom cell and a perovskite top cell, in which a seed crystal silicon layer and a tunneling layer are sequentially arranged between a surface of the silicon bottom cell and a bottom surface of the perovskite top cell, the seed crystal silicon layer being adjacent to the silicon bottom cell, and the tunneling layer being adjacent to the perovskite top cell. Here, the seed crystal silicon layer is an amorphous silicon layer, and the tunneling layer is a doped microcrystalline silicon oxide layer. The cell facilitates the tunneling between the silicon bottom cell and the perovskite top cell, thereby improving the open circuit voltage and the conversion efficiency of the cell.

Abstract: Various embodiments of the present application are directed towards a metal-insulator-metal (MIM) capacitor. The MIM capacitor comprises a bottom electrode disposed over a semiconductor substrate. A top electrode is disposed over and overlies the bottom electrode. A capacitor insulator structure is disposed between the bottom electrode and the top electrode. The capacitor insulator structure comprises at least three dielectric structures vertically stacked upon each other. A bottom half of the capacitor insulator structure is a mirror image of a top half of the capacitor insulator structure in terms of dielectric materials of the dielectric structures.

Abstract: A method and a system for monitoring wear of a braking frictional pad of a motor vehicle, includes stopping the motor vehicle stably on a horizontal or substantially horizontal plane; determining a current fluid level in a brake fluid reservoir; determining a volume difference (?VL) of the brake fluid in the brake fluid reservoir by comparing the determined current fluid level with a predetermined reference fluid level; when a thickness loss of a braking frictional pad equipped for a front vehicle wheel or a rear vehicle wheel is known, determining a thickness loss of a braking frictional pad assigned for the other front vehicle wheel or the other rear vehicle wheel based on the volume difference of the brake fluid in the brake fluid reservoir and a diameter of a brake piston of the respective brake device.

Abstract: In some implementations described herein, a capacitor structure may include a metal-insulator-metal structure in which work function metal layers are included between the insulator layer of the capacitor structure and the conductive electrode layers of the capacitor structure. The work function metal layers may enable high-k dielectric materials to be used for the insulator layer in that the work function metal layers may provide an increased electron barrier height between the insulator layer and the conductive electrode layers, which may increase the breakdown voltage and may reduce the current leakage for the capacitor structure.

Abstract: A display panel, a display apparatus, and a method for manufacturing a display panel. The display panel includes a base plate, an isolation structure, a light-emitting functional layer, and a plurality of first electrodes, the isolation structure includes a first portion and a second portion; the light-emitting functional layer includes first light-emitting portions and second light-emitting portions; an edge of the first electrode overlaps the first portion, a shortest connecting line between an edge of the first electrode portion and the first edge is a first connecting line, a shortest connecting line between an edge of the second electrode portion and the second edge is a second connecting line, and an angle between the second connecting line and a plane in which the base plate is located is less than an angle between the first connecting line and the plane.

Abstract: The present application relates to a display panel, a display apparatus, and a method for manufacturing a display panel. The display panel includes: a base plate including a pixel definition layer, the pixel definition layer including a plurality of pixel openings, an isolation structure being arranged at a side of the base plate close to the pixel definition layer, and an orthographic projection of the isolation structure on the pixel definition layer being spaced apart from the pixel opening and arranged around the pixel opening; a plurality of sub-pixels; and an encapsulation structure including a plurality of sub-encapsulation portions, the sub-encapsulation portion including a first encapsulation sub-layer and a second encapsulation sub-layer and in a thickness direction of the display panel, an area of an orthographic projection of the second encapsulation sub-layer being less than an area of an orthographic projection of the first encapsulation sub-layer.