Abstract: An ultraviolet-ray-assisted processing apparatus (10) for a semiconductor process includes a window disposed in a wall defining the process chamber (12) and to face a worktable (11), and configured to transmit ultraviolet rays. A light source (15) is disposed outside the process chamber (12) to face the window (20), and configured to emit ultraviolet rays. A supply system configured to supply a process gas in the process chamber (12) includes a head space (21) formed in the window (20) and which the process gas passes through, and a plurality of discharge holes (22) for discharging the process gas.

Abstract: A method and system for vapor deposition on a substrate that disposes a substrate in a process space of a processing system that is isolated from a transfer space of the processing system, processes the substrate at either of a first position or a second position in the process space while maintaining isolation from the transfer space, and deposits a material on said substrate at either the first position or the second position. Furthermore, the system includes a high conductance exhaust apparatus configured to be coupled to the process space, whereby particle contamination of the substrate processed in the deposition system is minimized. The exhaust apparatus comprises a pumping system located above the substrate and an evacuation duct, wherein the evacuation duct has an inlet located below the substrate plane.

Abstract: A method, computer readable medium, and system for treating a substrate in a process space of a processing system that is vacuum isolated from a transfer space of the processing system is described. A sealing device is disposed between a first chamber assembly configured to define the process space and a second chamber assembly configured to define the transfer space. When the sealing device is engaged, vacuum isolation is provided between the process space and the transfer space. The sealing device comprises two or more contact ridges with one or more pockets formed therebetween. When the sealing device is engaged between the first chamber assembly and the second chamber assembly, gas is trapped in the one or more pockets. This trapped gas assists the release of the sealing device upon disengagement of the sealing device between the first chamber assembly and the second chamber assembly.

Abstract: A method, computer readable medium, and system for treating a substrate in a process space of a vacuum processing system is described. A vacuum pump in fluid communication with the vacuum processing system and configured to evacuate the process space, while a process material supply system is pneumatically coupled to the vacuum processing system and configured to supply a process gas to the process space. Additionally, the vacuum pump is pneumatically coupled to the process supply system and configured to, at times, evacuate the process gas supply system.

Abstract: A method, computer readable medium, and system for vapor deposition on a substrate that maintain a first assembly of the vapor deposition system at a first temperature, maintain a second assembly of the vapor deposition system at a reduced temperature lower than the first temperature, dispose the substrate in a process space of the first assembly that is vacuum isolated from a transfer space in the second assembly, and deposit a material on the substrate. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support the substrate, and a sealing assembly configured to separate the process space from the transfer space.

Abstract: A method, computer readable medium, and system for vapor deposition on a substrate that maintain a first assembly of the vapor deposition system at a first temperature, maintain a second assembly of the vapor deposition system at a reduced temperature lower than the first temperature, dispose the substrate in a process space of the first assembly that is vacuum isolated from a transfer space in the second assembly, and deposit a material on the substrate. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support the substrate, and a sealing assembly configured to separate the process space from the transfer space.

Abstract: A method, computer readable medium, and system for vapor deposition on a substrate that disposes a substrate in a process space of a processing system that is vacuum isolated from a transfer space of the processing system, processes the substrate at either of a first position or a second position in the process space while maintaining vacuum isolation from the transfer space, and deposits a material on said substrate at either the first position or the second position. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support and translate the substrate between a first position in the transfer space to a second position in the process space.

Abstract: An apparatus for controlling precursor chemistry. The apparatus includes a chamber including a mixing space, at least one input coupled to the mixing space; and at least one output coupled to the mixing space. A motor subassembly coupled to the chamber and coupled to a mixing element in the mixing space. A controller coupled to the motor subassembly and to the chamber.

Abstract: The single substrate thermal processing apparatus (2) includes a process chamber (5) arranged to accommodate a target substrate (W) and provided with a showerhead (10) disposed on its ceiling. A support member (28) is disposed to support the target substrate (W) so as for it to face the showerhead (10), when the target substrate (W) is subjected to a semiconductor process. A heating lamp (30) is disposed below the support member (28), for radiating light to heat the target substrate (W). The support member (28) and heating lamp (30) are moved up and down together relative to the showerhead (10) by an elevator mechanism (20). The elevator mechanism (20) sets different distances between the showerhead (30) and heating lamp (10), in accordance with the different process temperatures, thereby causing temperature change of the bottom surface of the showerhead (10) to fall in a predetermined range.

Abstract: The single substrate thermal processing apparatus (2) includes a process chamber (5) arranged to accommodate a target substrate (W) and provided with a showerhead (10) disposed on its ceiling. A support member (28) is disposed to support the target substrate (W) so as for it to face the showerhead (10), when the target substrate (W) is subjected to a semiconductor process. A heating lamp (30) is disposed below the support member (28), for radiating light to heat the target substrate (W). The support member (28) and heating lamp (30) are moved up and down together relative to the showerhead (10) by an elevator mechanism (20). The elevator mechanism (20) sets different distances between the showerhead (30) and heating lamp (10), in accordance with the different process temperatures, thereby causing temperature change of the bottom surface of the showerhead (10) to fall in a predetermined range.

Abstract: A thermal processing system performs predetermined thermal processing on an approximately circular to-be-processed object, by applying radiant heat to the to-be-processed object by means of a heating lamp system. The heating lamp system comprises a plurality of lamps disposed concentrically so as to correspond to the to-be-processed object. The plurality of lamps are controlled individually for respective zones of the to-be-processed object.

Abstract: A thermal processing system for heating a to-be-processed object while rotating the to-be-processed object by a placement part, and for performing thermal processing on the to-be-processed object by supplying a predetermined gas into a processing chamber. An outer ring part provided outside the processing chamber and an inner ring part provided inside the processing chamber have pluralities of circumferentially arranged magnetic poles. The magnetic poles apply magnetic forces between the outer ring part and inner ring part so that the inner ring part will follow the rotation of the outer ring part. The number of magnetic poles of the outer ring part and inner ring part are selected to achieve an allowable angular error when between the outer ring part and inner ring part during rotation.

Abstract: A transfer apparatus (42) for a semiconductor processing system includes a transfer member (44) having a support portion (48) to place a target substrate (W) thereon, and a drive unit (68) for driving the transfer member (44). A reference mark (54) is disposed adjacent to the support portion (48). The target substrate (W) has optically observable first and second portions (84, 86). A storage section (63) stores a normal image that shows a positional correlation between the reference mark (54) and the first and second portions (84, 86), obtained when the target substrate (W) is placed on the support portion (48) at a normal position. An image pick-up device (62A) takes a detection image that shows a positional correlation between the reference mark (54) and the first and second portions (84, 86), when the transfer member (44) transfers the target substrate (W).

Abstract: A transfer apparatus (42) for a semiconductor processing system includes a transfer member (44) having a support portion (48) to place a target substrate (W) thereon, and a drive unit (68) for driving the transfer member (44). A reference mark (54) is disposed adjacent to the support portion (48). The target substrate (W) has optically observable first and second portions (84, 86). A storage section (63) stores a normal image that shows a positional correlation between the reference mark (54) and the first and second portions (84, 86), obtained when the target substrate (W) is placed on the support portion (48) at a normal position. An image pick-up device (62A) takes a detection image that shows a positional correlation between the reference mark (54) and the first and second portions (84, 86), when the transfer member (44) transfers the target substrate (W).

Abstract: An ultraviolet-ray-assisted processing apparatus (10) for a semiconductor process includes a window disposed in a wall defining the process chamber (12) and to face a worktable (11), and configured to transmit ultraviolet rays. A light source (15) is disposed outside the process chamber (12) to face the window (20), and configured to emit ultraviolet rays. A supply system configured to supply a process gas in the process chamber (12) includes a head space (21) formed in the window (20) and which the process gas passes through, and a plurality of discharge holes (22) for discharging the process gas.

Abstract: A thermal processing system performs predetermined thermal processing on an approximately circular to-be-processed object, by applying radiant heat to the to-be-processed object by means of a heating lamp system. The heating lamp system comprises a plurality of lamps disposed concentrically so as to correspond to the to-be-processed object. The plurality of lamps are controlled individually for respective zones of the to-be-processed object.

Abstract: A thermal process apparatus for a semiconductor substrate, including a heating source heating the semiconductor substrate by irradiating a light on one side of the semiconductor substrate, a reflection plate facing to the semiconductor substrate in a state where a reflection cavity is formed with another side of the semiconductor substrate, a thermometer having a light-receiving part provided on the refection plate so as to measure a temperature of the semiconductor substrate by catching a radiation beam from the semiconductor substrate heated by the heating source by the light-receiving part; and light absorption means provided around the light-receiving part for absorbing a diffuse reflection light generated in the reflection cavity.

Abstract: A thermal processing system according to the present invention heats a to-be-processed object while rotating the to-be-processed object by a placement part, and performs thermal processing on the to-be-processed object by supplying a predetermined gas into a processing chamber.