Patents by Inventor Yicheng Li

Yicheng Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210276548
    Abstract: This invention is an extension adaptive lane keeping control method with variable vehicle speed, which is composed of the following steps: S1, establishing a three-degree-of-freedom dynamic model and a preview deviation expression; S2, performing the lane line fitting equation; S3, designing the upper layer ISTE extension controller; including: S3.1, establishing the control index (ISTE) extension sets; S3.2, dividing the control index (ISTE) domain boundaries; S3.3, calculating the control index (ISTE) association function; S3.4, establishing the upper layer extension controller decision; S4, designing the lower layer speed extension controller; S5, designing the lower layer deviation tracking extension controller; including: S5.1, extracting the lower layer deviation tracking extension feature quantity and dividing domain boundaries; S5.2, designing the lower layer extension controller correlation function; S5.3, performing the lower layer measurement mode identification; S5.
    Type: Application
    Filed: February 20, 2019
    Publication date: September 9, 2021
    Inventors: Yingfeng CAI, Yong ZANG, Hai WANG, Xiaoqiang SUN, Long CHEN, Jun LIANG, Yicheng LI, Dehua SHI, Bin TANG
  • Publication number: 20200406222
    Abstract: A reaction chamber component includes a body made of a 5000-series aluminum alloy material and an oxide film layer disposed on a surface-to-be-covered of the body.
    Type: Application
    Filed: December 3, 2018
    Publication date: December 31, 2020
    Inventors: Yicheng LI, Yulin PENG, Yongyou CAO
  • Publication number: 20200321198
    Abstract: The present disclosure provides a lower electrode mechanism and a reaction chamber, the lower electrode mechanism includes a base for carrying a workpiece to be processed and a lower electrode chamber disposed under the base, the lower electrode chamber includes an electromagnetic shielding space and a non-electromagnetic shielding space isolated from each other, the chamber of the lower electrode chamber includes a first through hole and a second through hole, and the electromagnetic shielding space and the non-electromagnetic shielding space are respectively connected to outside through the first through hole and the second through hole to prevent a plurality of first components disposed in the electromagnetic shielding space from being interfered by a second component disposed in the non-electromagnetic shielding space.
    Type: Application
    Filed: November 15, 2017
    Publication date: October 8, 2020
    Inventors: Yahui HUANG, Gang WEI, Yicheng LI, Xingfei MAO
  • Patent number: 8454749
    Abstract: A method, computer readable medium, and system for vapor deposition on a substrate that maintain a first assembly of the vapor deposition system at a first temperature, maintain a second assembly of the vapor deposition system at a reduced temperature lower than the first temperature, dispose the substrate in a process space of the first assembly that is vacuum isolated from a transfer space in the second assembly, and deposit a material on the substrate. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support the substrate, and a sealing assembly configured to separate the process space from the transfer space.
    Type: Grant
    Filed: December 19, 2005
    Date of Patent: June 4, 2013
    Assignee: Tokyo Electron Limited
    Inventor: Yicheng Li
  • Publication number: 20120315404
    Abstract: A method for vapor deposition on a substrate in a vapor deposition system having a process space separated from a transfer space. The method disposes a substrate in a process space of a processing system that is vacuum isolated from a transfer space of the processing system, processes the substrate at either of a first position or a second position in the process space while maintaining vacuum isolation from the transfer space by way of a movement accommodating sealing material, and deposits a material on the substrate at either the first position or the second position.
    Type: Application
    Filed: August 1, 2012
    Publication date: December 13, 2012
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yicheng LI, Tadahiro ISHIZAKA, Kaoru YAMAMOTO, Atsushi GOMI, Masamichi HARA, Toshiaki FUJISATO, Jacques FAGUET, Yasushi MIZUSAWA
  • Patent number: 7794546
    Abstract: A method, computer readable medium, and system for treating a substrate in a process space of a processing system that is vacuum isolated from a transfer space of the processing system is described. A sealing device is disposed between a first chamber assembly configured to define the process space and a second chamber assembly configured to define the transfer space. When the sealing device is engaged, vacuum isolation is provided between the process space and the transfer space. The sealing device comprises two or more contact ridges with one or more pockets formed therebetween. When the sealing device is engaged between the first chamber assembly and the second chamber assembly, gas is trapped in the one or more pockets. This trapped gas assists the release of the sealing device upon disengagement of the sealing device between the first chamber assembly and the second chamber assembly.
    Type: Grant
    Filed: March 8, 2006
    Date of Patent: September 14, 2010
    Assignee: Tokyo Electron Limited
    Inventor: Yicheng Li
  • Publication number: 20100212592
    Abstract: An annular groove (150) is formed in a lid (3) of a vacuum processing chamber (2) along the periphery of an opening serving as a gas passage. A metal seal (140), having an annular shape (O-ring shape) as a whole and having a double-layered structure, is provided in the groove (150). An annular recess (160) is formed outside the groove (150) in the cover (3) to surround the groove (150). An annular protrusion (170) corresponding to the recess (160) is formed on a flange portion (130), and a fitting mechanism (180) for fitting the protrusion (170) is formed in the recess (160).
    Type: Application
    Filed: June 13, 2008
    Publication date: August 26, 2010
    Applicant: Tokyo Electron Limited
    Inventor: Yicheng Li
  • Patent number: 7740705
    Abstract: A method and system for vapor deposition on a substrate that disposes a substrate in a process space of a processing system that is isolated from a transfer space of the processing system, processes the substrate at either of a first position or a second position in the process space while maintaining isolation from the transfer space, and deposits a material on said substrate at either the first position or the second position. Furthermore, the system includes a high conductance exhaust apparatus configured to be coupled to the process space, whereby particle contamination of the substrate processed in the deposition system is minimized. The exhaust apparatus comprises a pumping system located above the substrate and an evacuation duct, wherein the evacuation duct has an inlet located below the substrate plane.
    Type: Grant
    Filed: March 8, 2006
    Date of Patent: June 22, 2010
    Assignee: Tokyo Electron Limited
    Inventor: Yicheng Li
  • Patent number: 7670432
    Abstract: A method, computer readable medium, and system for treating a substrate in a process space of a vacuum processing system is described. A vacuum pump in fluid communication with the vacuum processing system and configured to evacuate the process space, while a process material supply system is pneumatically coupled to the vacuum processing system and configured to supply a process gas to the process space. Additionally, the vacuum pump is pneumatically coupled to the process supply system and configured to, at times, evacuate the process gas supply system.
    Type: Grant
    Filed: March 8, 2006
    Date of Patent: March 2, 2010
    Assignee: Tokyo Electron Limited
    Inventor: Yicheng Li
  • Publication number: 20080127895
    Abstract: An ultraviolet-ray-assisted processing apparatus (10) for a semiconductor process includes a window disposed in a wall defining the process chamber (12) and to face a worktable (11), and configured to transmit ultraviolet rays. A light source (15) is disposed outside the process chamber (12) to face the window (20), and configured to emit ultraviolet rays. A supply system configured to supply a process gas in the process chamber (12) includes a head space (21) formed in the window (20) and which the process gas passes through, and a plurality of discharge holes (22) for discharging the process gas.
    Type: Application
    Filed: January 31, 2008
    Publication date: June 5, 2008
    Inventors: Shou-Qian SHAO, Yicheng Li
  • Publication number: 20070212484
    Abstract: A method and system for vapor deposition on a substrate that disposes a substrate in a process space of a processing system that is isolated from a transfer space of the processing system, processes the substrate at either of a first position or a second position in the process space while maintaining isolation from the transfer space, and deposits a material on said substrate at either the first position or the second position. Furthermore, the system includes a high conductance exhaust apparatus configured to be coupled to the process space, whereby particle contamination of the substrate processed in the deposition system is minimized. The exhaust apparatus comprises a pumping system located above the substrate and an evacuation duct, wherein the evacuation duct has an inlet located below the substrate plane.
    Type: Application
    Filed: March 8, 2006
    Publication date: September 13, 2007
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Yicheng Li
  • Publication number: 20070209590
    Abstract: A method, computer readable medium, and system for treating a substrate in a process space of a processing system that is vacuum isolated from a transfer space of the processing system is described. A sealing device is disposed between a first chamber assembly configured to define the process space and a second chamber assembly configured to define the transfer space. When the sealing device is engaged, vacuum isolation is provided between the process space and the transfer space. The sealing device comprises two or more contact ridges with one or more pockets formed therebetween. When the sealing device is engaged between the first chamber assembly and the second chamber assembly, gas is trapped in the one or more pockets. This trapped gas assists the release of the sealing device upon disengagement of the sealing device between the first chamber assembly and the second chamber assembly.
    Type: Application
    Filed: March 8, 2006
    Publication date: September 13, 2007
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Yicheng Li
  • Publication number: 20070209588
    Abstract: A method, computer readable medium, and system for treating a substrate in a process space of a vacuum processing system is described. A vacuum pump in fluid communication with the vacuum processing system and configured to evacuate the process space, while a process material supply system is pneumatically coupled to the vacuum processing system and configured to supply a process gas to the process space. Additionally, the vacuum pump is pneumatically coupled to the process supply system and configured to, at times, evacuate the process gas supply system.
    Type: Application
    Filed: March 8, 2006
    Publication date: September 13, 2007
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Yicheng Li
  • Publication number: 20070157683
    Abstract: A method, computer readable medium, and system for vapor deposition on a substrate that maintain a first assembly of the vapor deposition system at a first temperature, maintain a second assembly of the vapor deposition system at a reduced temperature lower than the first temperature, dispose the substrate in a process space of the first assembly that is vacuum isolated from a transfer space in the second assembly, and deposit a material on the substrate. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support the substrate, and a sealing assembly configured to separate the process space from the transfer space.
    Type: Application
    Filed: December 19, 2005
    Publication date: July 12, 2007
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Yicheng Li
  • Publication number: 20070116872
    Abstract: A method, computer readable medium, and system for vapor deposition on a substrate that disposes a substrate in a process space of a processing system that is vacuum isolated from a transfer space of the processing system, processes the substrate at either of a first position or a second position in the process space while maintaining vacuum isolation from the transfer space, and deposits a material on said substrate at either the first position or the second position. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support and translate the substrate between a first position in the transfer space to a second position in the process space.
    Type: Application
    Filed: November 18, 2005
    Publication date: May 24, 2007
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yicheng Li, Tadahiro Ishizaka, Kaoru Yamamoto, Atsushi Gomi, Masamichi Hara, Toshiaki Fujisato, Jacques Faguet, Yasushi Mizusawa
  • Publication number: 20070116873
    Abstract: A method, computer readable medium, and system for vapor deposition on a substrate that maintain a first assembly of the vapor deposition system at a first temperature, maintain a second assembly of the vapor deposition system at a reduced temperature lower than the first temperature, dispose the substrate in a process space of the first assembly that is vacuum isolated from a transfer space in the second assembly, and deposit a material on the substrate. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support the substrate, and a sealing assembly configured to separate the process space from the transfer space.
    Type: Application
    Filed: November 18, 2005
    Publication date: May 24, 2007
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yicheng Li, Tadahiro Ishizaka, Kaoru Yamamoto, Atsushi Gomi, Masamichi Hara, Toshiaki Fujisato, Jacques Faguet, Yasushi Mizusawa
  • Publication number: 20060130757
    Abstract: An apparatus for controlling precursor chemistry. The apparatus includes a chamber including a mixing space, at least one input coupled to the mixing space; and at least one output coupled to the mixing space. A motor subassembly coupled to the chamber and coupled to a mixing element in the mixing space. A controller coupled to the motor subassembly and to the chamber.
    Type: Application
    Filed: December 22, 2004
    Publication date: June 22, 2006
    Inventor: YiCheng Li
  • Patent number: 7029505
    Abstract: The single substrate thermal processing apparatus (2) includes a process chamber (5) arranged to accommodate a target substrate (W) and provided with a showerhead (10) disposed on its ceiling. A support member (28) is disposed to support the target substrate (W) so as for it to face the showerhead (10), when the target substrate (W) is subjected to a semiconductor process. A heating lamp (30) is disposed below the support member (28), for radiating light to heat the target substrate (W). The support member (28) and heating lamp (30) are moved up and down together relative to the showerhead (10) by an elevator mechanism (20). The elevator mechanism (20) sets different distances between the showerhead (30) and heating lamp (10), in accordance with the different process temperatures, thereby causing temperature change of the bottom surface of the showerhead (10) to fall in a predetermined range.
    Type: Grant
    Filed: November 27, 2001
    Date of Patent: April 18, 2006
    Assignee: Tokyo Electron Limited
    Inventors: Lin Sha, Shou-Qian Shao, Yicheng Li
  • Patent number: D589472
    Type: Grant
    Filed: April 10, 2007
    Date of Patent: March 31, 2009
    Assignee: Tokyo Electron Limited
    Inventor: Yicheng Li
  • Patent number: D593969
    Type: Grant
    Filed: April 10, 2007
    Date of Patent: June 9, 2009
    Assignee: Tokyo Electron Limited
    Inventor: Yicheng Li