Processing chamber for manufacturing semiconductors
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The broken line showing in the figures is for illustrative purposes only and forms no part of the claimed design.
Claims
The ornamental design for a processing chamber for manufacturing semiconductors or the like, as shown and described.
| D117375 | October 1939 | Knight |
| D210925 | April 1968 | Hawkinson |
| D228882 | October 1973 | Bish |
| 4340462 | July 20, 1982 | Koch |
| 4538301 | September 3, 1985 | Sawatzki et al. |
| D407405 | March 30, 1999 | Chiu |
| D496204 | September 21, 2004 | Tuzmen |
| 6852168 | February 8, 2005 | Park |
| 6884297 | April 26, 2005 | Park et al. |
| 6924464 | August 2, 2005 | Zhou et al. |
| D533328 | December 5, 2006 | Wake |
| 7147719 | December 12, 2006 | Welch et al. |
| 7207151 | April 24, 2007 | Swiszcz et al. |
| 20050133158 | June 23, 2005 | Nguyen et al. |
| 20050229849 | October 20, 2005 | Silvetti et al. |
| 20070205792 | September 6, 2007 | Mouli et al. |
| 20080121620 | May 29, 2008 | Guo et al. |
Type: Grant
Filed: Apr 10, 2007
Date of Patent: Mar 31, 2009
Assignee: Tokyo Electron Limited (Tokyo)
Inventor: Yicheng Li (Narashino)
Primary Examiner: Selina Sikder
Attorney: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
Application Number: 29/278,802